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The document summarizes two research reports on infrared sensors: 1) The first report investigates using reduced graphene oxide to enhance the sensitivity of a CMOS-MEMS infrared sensor. Testing found the sensor with rGO had a 77% increased responsivity and improved field of view characteristics. 2) The second report focuses on developing an integrated infrared sensor using pyroelectric materials like lead titanate. The sensor achieved a peak responsivity of 2.33 V/W and was integrated with a CMOS system. Fabrication involved depositing thin films and micromachining a suspended membrane structure.

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Abhinav Srivastava
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46 views

Report

The document summarizes two research reports on infrared sensors: 1) The first report investigates using reduced graphene oxide to enhance the sensitivity of a CMOS-MEMS infrared sensor. Testing found the sensor with rGO had a 77% increased responsivity and improved field of view characteristics. 2) The second report focuses on developing an integrated infrared sensor using pyroelectric materials like lead titanate. The sensor achieved a peak responsivity of 2.33 V/W and was integrated with a CMOS system. Fabrication involved depositing thin films and micromachining a suspended membrane structure.

Uploaded by

Abhinav Srivastava
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Report 1: Research on a CMOS-MEMS Infrared Sensor with Reduced Graphene

Oxide

Introduction

The research paper investigates the use of reduced graphene oxide (rGO) for a
complementary metal-oxide-semiconductor (CMOS)-MEMS infrared (IR) sensor
and emitter. The focus is on enhancing the sensitivity of IR sensors and exploring
the potential of rGO in IR absorption. The study involves thorough investigations of
IR properties, including absorption and emission, by calibrating and measuring with
a CMOS thermoelectric sensor.

Experimental Approach and Results

The paper introduces a new approach of employing rGO for IR sensors and
emitters, specifically drop-coated on a floating membrane with an array of holes at
the center of the sensor to form a thermal radiation-sensing film. The results reveal
that the proposed CMOS-MEMS IR sensor with rGO demonstrates a 77% increase
in responsivity compared to the sensor without rGO. Furthermore, the sensor with
rGO exhibits improved field of view characteristics, particularly smaller view angle,
making it suitable for long-distance measuring applications. Additionally, the paper
discusses the design, fabrication, measurement, and analysis of the proposed
CMOS-MEMS thermopile with rGO, evaluating its absorption and emission
characteristics. The study indicates that the drop-coating of rGO enhances the
thermal radiation absorption, and the thermal radiation emission characteristics of
the sensor are also explored.

Characteristics Evaluation

The characteristics of the proposed thermopile, including frequency response,


noise, noise equivalent power, and normalized detectivity, are evaluated. The
experimental results show that the proposed CMOS-MEMS IR sensor with rGO
outperforms the sensor without rGO in terms of sensitivity, SNR, and figure of
merit. The study also addresses the challenge of achieving a high degree of
repeatability and consistency when applying rGO to sensors through drop-coating.
Impact of Incident Angles

Furthermore, the research delves into the impact of different incident angles of IR
radiation on the thermopiles. The results show that the IR sensor with rGO has a
smaller view angle, making it suitable for long-distance temperature measuring
applications.

In conclusion, the study demonstrates the potential of rGO in enhancing the


sensitivity, field of view, and various performance parameters of CMOS-MEMS IR
sensors, providing insights into the practical application of rGO in IR sensor
technology. The work emphasizes the importance of considering the characteristics
and performance of rGO in the development of advanced IR sensor and emitter
devices.
Report 2: CMOS Integrated Infrared Sensor

The research paper focuses on the development of an integrated infrared sensor


system using pyroelectric materials, specifically lead titanate (PTO), lead calcium
titanate (PCTx), and lithium tantalate (LT). These materials are chosen for their
large pyroelectric coefficients, small dielectric constants, and small specific heat,
which are essential for a high-sensitivity pyroelectric detector. The paper also
discusses the design considerations for creating a high-sensitivity pyroelectric
detector, emphasizing the need for small thermal capacitance and thermal
conductance to maximize the temperature change induced by incident IR radiation.

The authors describe the fabrication process, which involves using a new sol-gel
derived thin film on a thin silicon microelectromechanical structure for the infrared
sensor. The sensor has a peak responsivity of 2.33 V/W and a thermal time constant
of 300 ms. The integration of the optimized detector with a low-power CMOS signal
processing system is achieved through flip-chip bonding. This integration is ideal
for pyroelectric sensor measurement.

The research also discusses the sol-gel synthesis process for the pyroelectric
materials, specifically the lead calcium titanate. The process involves significant
modifications to the sol-gel synthesis first developed by J.B. Blum and S. R.
Gurkovich. Additionally, the paper explores the process for fabricating the lithium
tantalate precursor, which involves depositing multiple layers of LiTaO films on
platinized Si3N4 substrate.

Infrared Sensor Fabrication Details

Furthermore, the authors detail the fabrication process for the infrared sensor,
including the use of bulk micromachining to create a suspended membrane
structure for support of the pyroelectric film detector. The process involves
anisotropic etching of the silicon substrate to form the suspended structural
membrane, followed by spin coating methods and heat treatment steps.
Additionally, the paper discusses the deposition of infrared-absorbing layers such
as metal black to improve infrared absorption.

The characterization of the infrared sensor's response is presented, showing the


frequency-dependent pyroelectric response of the complete sensor system and the
achieved enhancement in responsivity with the use of bismuth black infrared
absorber. The sensor system successfully combines sol-gel pyroelectric thin films
with silicon bulk-micromachining technology and metal black deposits to achieve
higher sensitivity.
Overall Findings and Significance

Overall, the research paper highlights the advantages of pyroelectric infrared


detectors and the significance of using ferroelectric materials such as lead titanate,
lead calcium titanate, and lithium tantalate for their specific properties. It also
emphasizes the key design considerations for creating a high-sensitivity
pyroelectric detector and the successful integration of the detector with a low-
power CMOS signal processing system. The findings are important for the
development of advanced infrared sensor systems and are supported by the
Defense Advanced Research Projects Agency (DARPA)

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