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Presentation 30

The document discusses the characteristics of a PN junction diode, including how applying a forward or reverse bias affects the depletion region and current flow. It explains that a forward bias leads to a thin depletion region and high current, while a reverse bias widens the depletion region, creating a high impedance path with little current. Examples of applications and different types of diodes are also briefly mentioned.

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Avi Tiwari
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19 views11 pages

Presentation 30

The document discusses the characteristics of a PN junction diode, including how applying a forward or reverse bias affects the depletion region and current flow. It explains that a forward bias leads to a thin depletion region and high current, while a reverse bias widens the depletion region, creating a high impedance path with little current. Examples of applications and different types of diodes are also briefly mentioned.

Uploaded by

Avi Tiwari
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Coast guard public school

Physics Art integrated Project

Topic: Characteristics of p-n junction diode and its


usages.
Submitted by: Mr. Aashish Tripathi [class-12 AM]
Acknowledgement
The success and final outcome of this project required a log of
guidance and assistance from many people and I am
extremely fortunate to have got this all along the completion of
my project work. Whatever I have done is only due to such
guidance and assistance and I would not forget to thank them.

I respect and thank Mr. Amit Singh, for giving me an opportunity


to do this project work and providing us all support and
guidance which made me complete the project on time.

2
Certificate
This is to certify that Master Aashish Tripathi, a student
of class 12th(math) has successfully completed his project work
under the guidance of subject teacher Mr. Amit Singh during the
year 2023-2024 from Coast Guard Public School in partial
fulfillment of physics practical examination conducted by CBSE,

Teacher In-charge External Examiner

Principal School stamp


3
CONTENTS

• Certificate
• Acknowledgement
• Introduction
• Diode Theory
• Reverse Biased PN Junction Diode
• Forward Biased PN Junction Diode
• Breakdown Region
• Characteristics
• Bibliography
DIODE (THEORY-> PN JUNCTION, BIASING,
CHARACTERISTIC CURVES)

THEORY:

A PN Junction Diode is one of the simplest


Semiconductor Devices around, and which has the
characteristic of passing current in only one direction
only. However, unlike a resistor, a diode does not
behave linearly with respect to the applied voltage as
the diode has an exponential current-voltage (I-V)
relationship and therefore we cannot described its
operation by simply using an equation such as Ohm's
law voltages. The current is typically on the y-axis, and the
voltage on the x- axis. The characteristic curve of a junction diode is also
called an I-V Curve. It is typically a graph showing the
current flow at different
Introduction

A diode is a specialized electronic component with two


electrodes called the anode and the cathode. Most diodes are
made with semiconductor materials such as silicon,
germanium, or selenium. If we were to make electrical
connections at the ends of both the N-type and the P-type
materials and then connect them to a battery source, an
additional energy source now exists to overcome the potential
barrier. The effect of adding this additional energy source
results in the free electrons being able to cross the depletion
region from one side to the other. The behavior of the PN
junction with regards to the potential barrier's width produces
an asymmetrical conducting two terminal device, better known
as the PN Junction Diode.
This type of graph provides engineers with a visual record of the operating characteristics of
the component. This information enables them to use the component more appropriately
within a circuit. There are many different types of diodes, and they all have different
characteristics curves and applications. Here are some diodes you might come across: Zener,
Germanium, Gunn, Tunnel, and Schottky. The current that flows through it is not proportional
to the applied voltage.

If a suitable positive voltage (forward bias) is applied between the two ends of the PN
junction, it can supply free electrons and holes with the extra energy they require to cross
the junction as the width of the depletion layer around the PN junction is decreased.
Junction Diode Symbol and Static I-V Characteristics.

On the voltage axis above, "Reverse Bias" refers to an external voltage potential which increases the
potential barrier. An external voltage which decreases the potential barrier is said to act in the
"Forward Bias" direction. There are two operating regions and three possible "biasing" conditions for
the standard Junction Diode and these are:
• Zero Bias No external voltage potential is applied to the PN junction diode.

• Reverse Bias - The voltage potential is connected negative, (-ve) to the P-type material and positive, (+ve)
to the N-type material across the diode which has the effect of Increasing the PN junction diode's width.

• Forward Bias - The voltage potential is connected positive, (+ve) to the P-type material and negative, (-ve)
to the N-type material across the diode which has the effect of Decreasing the PN junction diodes width.
Forward Biased PN Junction Diode

This is because the negative voltage pushes or repels electrons towards the junction giving
them the energy to cross over and combine with the holes being pushed in the opposite
direction towards the junction by the positive voltage. This results in a characteristics curve
of zero current flowing up to this voltage point, called the "knee" on the static curves and
then a high current flow through the diode with little increase in the external voltage as
shown below.

When a diode is connected in a Forward Bias condition, a negative voltage is applied to the
N-type material and a positive voltage is applied to the P-type material. If this external
voltage becomes greater than the value of the potential barrier, approx. 0.7 volts for silicon
and 0.3 volts for germanium, the potential barriers opposition will be overcome and current
will start to flow.
The application of a forward biasing voltage on the junction diode results in the depletion layer becoming very
thin and narrow which represents a low impedance path through the junction thereby allowing high currents
to flow. The point at which this sudden increase in current takes place is represented on the static I-
V characteristics curve above as the "knee" point.

Reverse Biased PN Junction Diode

When a diode is connected in a Reverse Bias condition, a positive voltage is applied to the N-type
material and a negative voltage is applied to the P-type material. The positive voltage applied to
the N-type material attracts electrons towards the positive electrode and away from the junction,
while the holes in the P-type end are also attracted away from the junction towards the negative
electrode The net result is that the depletion layer grows wider due to a lack of electrons and
holes and presents a high impedance path, almost an insulator. The result is that a high
potential barrier is created thus preventing current from flowing through the semiconductor
material.
Bibliography

• www.Google.com
• www.wikipedia.org
• Reserchgate.net
• www.byju.com

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