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DS PDB C134 1

This document provides information on the PDB-C134 silicon photodiode from Advanced Photonix, including its features, specifications, applications, and care instructions. Key features include its large active area, photoconductive mode, high speed, and low cost. Its specifications include a short circuit current of 50-60uA, dark current of 2-30nA, and spectral response range of 400-1100nm. Care must be taken to avoid ESD damage, exposure to harsh chemicals or extreme temperatures, and improper soldering.
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0% found this document useful (0 votes)
19 views

DS PDB C134 1

This document provides information on the PDB-C134 silicon photodiode from Advanced Photonix, including its features, specifications, applications, and care instructions. Key features include its large active area, photoconductive mode, high speed, and low cost. Its specifications include a short circuit current of 50-60uA, dark current of 2-30nA, and spectral response range of 400-1100nm. Care must be taken to avoid ESD damage, exposure to harsh chemicals or extreme temperatures, and improper soldering.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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A Division of Optoelectronics

Silicon Photodiode

PDB-C134
Silicon Photodiode

The PDB-C134 is a blue enhanced PIN silicon photodiode in a photoconductive mode packaged
in a water clear T1 plastic package.

Applications Features
Smoke Detectors Large Active Area
Light Pen Detectors Photoconductive
TV & VCR Remotes High Speed
Bar Code Detectors Low Cost

PASSION FOR PHOTONICS


DS PDB-C134 Rev. A
A Division of Optoelectronics
Silicon Photodiode

Absolute Maximum Ratings

Parameter Symbol Min Max Unit

Reverse Voltage VR - 100 V

Wavelength Range - 400 1100 nm

Operating Temperature TOP -40 +80 ºC

Storage Temperature TSTG -55 +100 ºC

Package T1

Typical Electro-Optical Specifications at TA=23 ºC

Parameter Test Conditions Symbol Min Typ Max Unit

Short Circuit Current H=100 fc, 2850K ISC 50 60 - μA

Dark Current VR=10V ID - 2 30 nA

Shunt Resistance VR=10mV RSH 0.5 2 - GΩ

Junction Capacitance VR=10V;f=1MHz CJ - 6 10 pF

Spectral Application Range Spot Scan λ 400 - 1100 nm

Breakdown Voltage I=10μA VBD 50 100 - V

Noise Equivalent Power VR=10V @ λ=Peak NEP - 1.8x10-13 - W/ √ Hz

Response Time RL=1KΩ, VR=50V TR - 10 - nS

Spectral Response Capacitance vs Bias

0.6 18
16
0.5
14
Responsivity (A/W)

Capacitance (pF)

0.4 12

10
0.3
8
0.2 6
4
0.1
2
0.0 0
200 300 400 500 600 700 800 900 1000 1100 0 5 10 15 20 25 30 35 40 45 50

Wavelength (nm) Bias (V)

PASSION FOR PHOTONICS


DS PDB-C134 Rev. A
A Division of Optoelectronics
Silicon Photodiode

Mechanical Specifications
Units are in mm

Soldering Conditions: 260˚C 1/16 inch away from case for 3 seconds max.

PASSION FOR PHOTONICS


DS PDB-C134 Rev. A
A Division of Optoelectronics
Silicon Photodiode

Care and handling instructions


Your optoelectronic components are packaged • Optoelectronic components in plastic packages
and shipped in opaque, padded containers to avoid should be given special care. Clear plastic
ambient light exposure and damage due to shock from packages are more sensitive to environmental
dropping or jarring. stress than those of black plastic. Storing devices
in high humidity can present problems when
Care must be taken to avoid exposure to high ambient soldering. Since the rapid heating during soldering
light levels, particularly from tungsten sources or stresses the wire bonds and can cause wire to
sunlight. bonding pad separation, it is recommended that
devices in plastic packages to be baked for 24
• These components can be rendered inoperable hours at 85°C.
if dropped or sharply jarred. The wire bonds are
delicate and can become separated from the • The leads on the photodiode SHOULD NOT
BE FORMED. If your application requires
bonding pads when the component is dropped or
lead spacing modification, please contact
otherwise receives a sharp physical blow.
Advanced Photonix Applications group at
• Most windows on photodiodes are either silicon [email protected] before
or quartz. They should be cleaned with isopropyl forming a product’s leads. Product warranties
alcohol and a soft (optical grade) pad. could be voided.

• Photodiode exposure to extreme high or low • Most devices are provided with wire or pin leads for
storage temperatures can affect the subsequent installation in circuit boards or sockets. Observe
performance. Maintain a non-condensing the soldering temperatures and conditions
environment for optimum performance and specified below:
lifetime.
• Soldering Iron: Soldering 30 W or less
• All devices are considered ESD sensitive. • Temperature at tip of iron 300°C or lower.
The photodiodes are shipped in ESD protective • Dip Soldering: Bath Temperature: 260±5°C.
packaging. When unpacking and using these • Immersion Time: within 5 Sec.
products, anti-ESD precautions should be • Soldering Time: within 3 Sec.
observed. • Vapor Phase Soldering, Reflow Soldering:
DO NOT USE
• Photodiode packages and/or operation may
be impaired if exposed to CHLOROETHENE,
THINNER, ACETONE, TRICHLOROETHYLENE
or any harsh chemicals.

Legal Disclaimer
Information in this data sheet is believed to be correct
and reliable. However, no responsibility is assumed for
possible inaccuracies or omission. Specifications are
subject to change without notice.

Most of our standard catalog products


are RoHS Compliant. Please contact
us for details.

PASSION FOR PHOTONICS


DS PDB-C134 Rev. A

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