Experiment 05

Experimental Study of Single-Phase Half-Bridge Inverter and Experimental THD

Calculation Using MATLAB/Simulink.
5.1 Objectives:
The main objectives of this experiments are:
• To know the principles of inverter.
• Design a single phase Half Bridge square wave Inverter.
• To analysis the waveforms square wave and calculate the THD using
MATLAB/Simulink from CSV file.

5.2 Theory:
Inverter is one kind of converter that converts a dc power into ac power. Inverters cannot
generate or amplify power. All it can do is convert of power. Inverters are used in different
cases. Mostly used in power transformation. When a high voltage power is transformed from
one place to another distinct place, it is transformed in dc form. Then it is further converted
into ac power. Here to convert dc power into ac power inverter is used.
Although there are two types of inverters known as single-phase inverter and three-phase
inverter, we used single-phase inverter in this experiment. IGBT is an important component
for inverter circuit. IGBT controls the supply of power according to gate pulse. Power supply
is dependent on the gate pulses it is fed by the IGBT gate driver circuit.

Figure-5.1: Block diagram of DC to AC converter.

5.2.1 Single Phase Half Bridge Inverter:

Figure-5.2: Single Phase Half Bridge Inverter with R Load

The working of the half-bridge inverter is divided into two periods,
• In period I, thyristor T1 will conduct for a time interval between 0 and T/2 (i.e.,
for 0 ≤ t ≤ T/2).
• In period II, thyristor T2 will conduct for a time interval between T/2 and T (i.e.,
for T/2 ≤ t ≤ T).
Where T = (1/frequency of the output wave). The circuit operation should be in such a way
that both the thyristors should not conduct at the same time. Below shows the waveforms of
output voltage and thyristors gate currents. Since load is assumed to be resistive the output
current waveform will be equal to the output voltage waveform.

Figure-5.3: Waveform of load voltage, load current of Single-Phase Half Bridge Inverter with R
Load.
Fourier series for o/p voltages of inverter waveform:
We know,
𝛼 𝛼
𝑎0
𝑓 (𝑤𝑡) = + ∑ 𝑎𝑛 𝑐𝑜𝑠𝑛 𝑤0 𝑡 + ∑ 𝑏𝑛 𝑠𝑖𝑛𝑛 𝑤𝑡 … … … … (𝑖)
2
𝑛,1 𝑛=1
Where,
2𝜋
1
𝒂𝟎 = ∫ 𝑓 (𝑤𝑡) 𝑑(𝑤𝑡)
2𝜋 0
2 2𝜋
𝒂𝒏 = ∫ 𝑓(𝑤𝑡) cos (𝑛𝑤𝑡) 𝑑(𝑤𝑡)
2𝜋 0
2 2𝜋
𝒃𝒏 = ∫ 𝑓(𝑤𝑡) sin (𝑛𝑤𝑡) 𝑑(𝑤𝑡)
2𝜋 0
𝐴𝑟𝑒𝑎 𝑜𝑓 𝑝𝑟𝑜𝑑𝑢𝑐𝑡 𝑜𝑓 𝑇𝑤𝑜 𝐹 𝑛
= ×2
𝑇𝑖𝑚𝑒 𝑃𝑒𝑟𝑖𝑜𝑑
Inverter Output is a odd function and Quarter Wave Symmetry, So
𝑎0 = 0;
𝑎𝑛 = 0;
𝑏𝑛 = 0 ( 𝑓𝑜𝑟 𝑎𝑙𝑙 𝑒𝑣𝑒𝑛 𝑛)
2 2𝜋
𝑏𝑛 = ∫ 𝑓(𝑤𝑡) 𝑠𝑖𝑛𝑛 𝑤𝑡 𝑑 (𝑤𝑡) = 0
2𝜋 0
So, 𝑓 (𝑤𝑡) = ∑𝛼𝑛=1,3,5,7 𝑏𝑛 sin (𝑛 𝑤𝑡)𝑑(𝑤𝑡)
Now, 𝑏𝑛 for odd ,
2𝜋
2
𝑏𝑛(𝑜𝑑𝑑) = ∫ 𝑓(𝑤𝑡) sin (nwt) d(wt)
2𝜋 0
2 2𝜋
𝑏1 = ∫ 𝑓(𝑤𝑡) sinwt d(wt)
2𝜋 0
𝜋
1 1 2𝜋
= 𝑉𝑑𝑐 [∫ 𝑉𝑑𝑐 𝑠𝑖𝑛𝑤𝑡 𝑑(𝑤𝑡) + ∫ (−𝑉𝑑𝑐 ) 𝑠𝑖𝑛𝑤𝑡 𝑑(𝑤𝑡) ]
𝜋 0 𝜋 0
1 𝜋 −𝑉𝑑𝑐 2𝜋
= 𝑉𝑑𝑐 [− cos 𝑤𝑡] + [− cos 𝑤𝑡]
𝜋 0 𝜋 𝜋
𝑉𝑑𝑐 2𝑉𝑑𝑐
= [1 + 1 ] =
𝜋 𝜋

𝜋 2𝜋
2
𝑏3 = {∫ 𝑉𝑑𝑐 𝑠𝑖𝑛3 𝑤𝑡 𝑑(𝑤𝑡) + ∫ (−𝑉𝑑𝑐 ) 𝑠𝑖𝑛3 𝑤𝑡 𝑑 (𝑤𝑡) }
2𝜋 0 𝜋
𝑉𝑑𝑐 𝑐𝑜𝑠3𝑤𝑡 𝜋 𝑉𝑑𝑐 𝑐𝑜𝑠3𝑤𝑡 2𝜋 𝑉𝑑𝑐 2𝑉𝑑𝑐
= {[− ] + (− ) [− ] }= (1 + 1) =
𝜋 3 0 𝜋 3 0 3𝜋 3𝜋

2𝑉𝑑𝑐
Finally,𝑏𝑛 = ( 𝑓𝑜𝑟 𝑎𝑙𝑙 𝑜𝑑𝑑 𝑛 𝑛𝑢𝑚𝑏𝑒𝑟)
𝑛𝜋

THD calculation for square wave:

√𝑉𝑜(𝑟𝑚𝑠) 2−𝑉1(𝑟𝑚𝑠) 2
T.H.D = x 100%
𝑉1

5.2.2: IGBT:
The Insulated Gate Bipolar Transistor, also called IGBT for short, is something of a cross
between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor
(MOSFET) making it ideal as a semiconductor switching device. The IGBT Transistor takes
the best parts of these two types of common transistors, the high input impedance and high
switching speeds of a MOSFET with the low saturation voltage of a bipolar transistor and
combines them together to produce another type of transistor switching device that is capable
of handling large collector-emitter currents with virtually zero gate current drive. [1]

Figure-5.4 Pin diagram for IGBT H20R1203 [2].

5.2.3 B1212S-1W:
The B1212S-1WR2 are specially designed for applications where an isolated voltage is
required in a distributed power supply system. They are suitable for Where the voltage of the
input power supply is stable.

Figure-5.5 Pin diagram for DC-to-DC converter B1212S [3].

5.2.4 TLP250:
The TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector, use of
TLP 250- Transistor inverter, inverters for air conditioner, IGBT gate Driver, Power
MOSFET gate driver. TLP250 internal circuit construction and pinout,

Figure-5.6 Internal construction & pin diagram for TLP 250[4].

5.3 Required Apparatus:
i. Microcontroller (Arduino Uno)
ii. IGBT (H20R1203) [2 pcs]
iii. TLP 250 [2 pc]
iv. B1212S [2 pcs]
v. DC power supply (12V)
vi. Resistor: 100Ω 1/2W, 10kΩ 1/2W [4 pcs]
vii. Transformer (12V 3A)
viii. Oscilloscope
ix. Multimeter
x. Breadboard
xi. Connecting wires

5.4 Circuit Diagram:

GND
+12 v
1 8
C
TLP 250

µ(9) 2 7 100 Ω
3 IGBT 1
6
1 2 3 4 4 5 10 µF
E
10 KΩ

Arduino Ground +12 v

Load

1 8
10 µF
TLP 250

µ(10) 2 7 100 Ω
1 2 3 4 3 6 IGBT 2
4 5
B1212 10 KΩ

Figure-5.7: Circuit diagram of Single-Phase Half-Bridge Inverter with R load.

5.5 Experimental Setup:

Laptop

Oscilloscope
Micro-controller

DC Voltage
Source

IGBT

Figure-5.8: A photograph of the experimental test platform Single-Phase Half-Bridge Inverter.

5.6 Experimental result:

Output waveform

Figure-5.9: Output wave of a square wave Single-Phase Half-Bridge Inverter.

5.6.1: Process of THD Calculation Using MATLAB/Simulink:

Figure-5.10: Block diagram of process of THD calculation.

5.6.2 MATLAB Simulink Based THD Results:

5.7 Discussion and Conclusion:

From this experiment we have seen the application of single-phase half bridge inverter. We
have seen how DC input signal has been converted into an AC output signal. Here the
calculated THD for square wave input is greater than THD for PWM. But always THD for
PWM is less than THD for square wave input. That is why the PWM wave is more sine-like
and that is why there is less distortion of input voltage. Whereas the square wave has more
harmonics which causes more distortion and thus causes more THD than PWM. So, for
proper sine-like output PWM should be used. The experiment was to observe the output
waveform of single-phase half bridge inverter and calculate the experimental THD by using
MATLAB Simulink. Various power electronics devices were used in this experiment. We
have seen the application of TLP250, IGBT and other equipment. We need to be careful
while building the circuit and ensure the presence of dead band in the signals otherwise the
equipment will get damaged. We have known about different characteristics of these devices
and have used in various gate driver circuit as switch and other functions. We have observed
the output waveforms and calculated the THD from MATLAB Simulink. So, the experiment
was successful.

References
[1] https://www.electronics-tutorials.ws/power/insulated-gate-bipolartransistor.html
[2] https://www.datasheetq.com/G15N60-doc-Infineon-2008
[3] https://sc04.alicdn.com/kf/Hd40d10855f1f4ec89af31925a1ee5332d.jpg
[4] https://www.datasheetcafe.com/tlp250-datasheet-pdf/
 Appendix
Microcontroller Program for SCR Gate Pulse:
void setup() {
pinMode(9,OUTPUT);
pinMode(10, OUTPUT);
}
void loop() {
delayMicroseconds(1);
digitalWrite(9,HIGH);
delayMicroseconds(9998);
digitalWrite(9,LOW);
delayMicroseconds(2);
digitalWrite(10,HIGH);
delayMicroseconds(9998);
digitalWrite(10,LOW);
delayMicroseconds(1);
}