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Unit-9 (Semiconductor)

The document discusses semiconductors and semiconductor devices. It covers topics like the band theory of conductors, insulators and semiconductors; n-type and p-type doping of semiconductors to form a p-n junction; the formation and working of a diode; rectification using diodes; and factors affecting the properties and performance of semiconductor materials and devices. The questions ask about energy band diagrams, doping, majority carriers, V-I characteristics, depletion regions, drift and diffusion currents, rectification, and the effects of temperature on conductivity.

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0% found this document useful (0 votes)
29 views

Unit-9 (Semiconductor)

The document discusses semiconductors and semiconductor devices. It covers topics like the band theory of conductors, insulators and semiconductors; n-type and p-type doping of semiconductors to form a p-n junction; the formation and working of a diode; rectification using diodes; and factors affecting the properties and performance of semiconductor materials and devices. The questions ask about energy band diagrams, doping, majority carriers, V-I characteristics, depletion regions, drift and diffusion currents, rectification, and the effects of temperature on conductivity.

Uploaded by

garvit1223
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Unit-9 ( semiconductor)

1. Carbon and silicon both have four valence electrons each. How then are they distinguished.

2. Draw energy band diagrams of an n-type and p-type semiconductor at temperature T > 0K. Mark the
donor and acceptor energy levels with their energies.

3. What is doping? Why is it needed?

4. Distinguish between conductor, insulator and semiconductor on the basis of band theory.

5. (i) Distinguish between n-type and p-type semiconductor

(ii) Distinguish between intrinsic and extrinsic semiconductor.

6. How n-type and p-type semiconductor formed? Name the majority charge carrier in each case.

7. In the following diagram, which bulb out of B1 and B2 will glow and why ?

8. The V-I characteristic of a silicon diode is shown the fig. Calculate the resistance of the diode at (a) ID
= 15 and (b) VD = -10V.

9. Explain the term depletion region and potential barrier for p-n junction? How depletion region is
formed?

10. (i) Draw V-I characteristics of p-n junction diode in (a) forward bias, (b) reverse bias. Explaine knee
voltage and breakdown voltage.

(ii) Why is the current under reverse bias almost independent of the applied potential upto a critical
voltage?

(ii) Why does the reverse current show a sudden increase at the critical voltage?
11. Two semiconductor materials X and Y shown in the given figure, are made by doping germanium
crystal with indium and arsenic respectively. The two are joined end to end and connected to a battery a
shown.

(i) Will the junction be forward biased or reverse biased?

(ii) Sketch a V-I graph for this arrangement.

12. What is a rectifier? With the help of a necessary ciruit diagram, give working of a diode as an full
wave rectifier. Give its input and output waveform.how it is different from half wave rectifier?

13. (i) Differentiate between drift current and diffusion current.

(ii) in an a.c. input signal frequency 60 Hz is rectified by a (i) half wave (ii) Full wave rectifier. Draw
output wave form and write the output frequency in each case.

14. (i) Why a semiconductor damaged by a strong current?

(ii) Why are germanium preferred over silicon for making semiconductor devices? Why are silicon
devices preferred now?

15. (i) Why we prefer n-type semiconductor over p-type semiconductor ?

(ii) Why we not much use pure semiconductor?

(iii) A piece of copper and another germanium are cooled from room temperature to 100 K. What will
happen to their conductivities?

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