WPM2341

WPM2341
P-Channel Enhancement Mode Mosfet
Http://www.sh-willsemi.com

Features
z Higher Efficiency Extending Battery Life
z Miniature SOT23-3 Surface Mount Package
3
z Super high density cell design for extremely low RDS (ON)

1
Applications 2
zDC/DC Converter
zLoad Switch
zBattery Powered System
z SOT 23-3
zLCD Display inverter
zPower Management in Portable, Battery Powered Products
pin connections :

PïChannel
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Steady
Parameter Symbol 5s Unit G 1
State
3 D
Drain-Source Voltage VDS -20
V S 2
Gate-Source Voltage VGS ±8
Continuous Drain Current TA=25°C -4.3 -3.5 Top View
a
ID
(TJ = 150 °C) TA=80°C -3.2 -2.5
Pulsed Drain Current IDM -20 A Marking:

Continuous Source Current

IS -1.7 -1 Drain
(Diode Conduction) a 3
Maximum Power TA=25°C 1.25 0.75 W41Z
a
PD W
Dissipation TA=80°C 0.7 0.42
1 2
Operating Junction and Storage
TJ, Tstg - 55 to 150 °C Gate Source
Temperature Range
W 41= Specific Device Code
a. Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu. Z = Date Code

Order information
PartNumber Package Shipping 
WPM2341Ͳ3/TR
 SOT23-3  3000Tape&Reel

Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.9

 WPM2341

THERMAL RESISTANCE RATINGS 

Parameter Symbol Typical Maximum Unit
t”5s 75 100
Junction-to-Ambient Thermal Resistance b RșJA °C/W
Steady State 125 165
b. Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu.

MOSFET ELECTRICAL CHARACTERISTICS(TJ =25 ć unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = -250ȝA -20 V
Zero Gate Voltage Drain Current IDSS VDS =-16V,VGS = 0V -1 ȝA
Gate –Source leakage current IGSS VGS = f8 V,VDS = 0V f100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VGS = VDS, ID =-250ȝA -0.35 -0.63 -1.00 V
Static Drain-Source VGS = -4.5V, ID = -3.3A 52 61 mȍ
RDS(on)
On-Resistance VGS = -2.5V,ID = -2.8 A 65 71 mȍ
Forward Transconductance gFS VDS = -5 V, ID = -3.3A 3.0 S
Dynamic Characteristics
Input Capacitance Ciss 700 pF
VDS = -6 V, VGS = 0V,
Output Capacitance Coss 160 pF
f = 1.0 MHz
Reverse Transfer Capacitance Crss 120 pF
Switching Characteristics
Turn-On Delay Time td(on) 25 ns
Turn-On Rise Time tr VGS = -4.5V, VDD = -6 V, 55 ns
Turn-Off Delay Time td(off) ID = -1.0A, RG=6.0ȍ, 90 ns
Turn-Off Fall Time tf 60 ns
Total Gate Charge QG(TOT) 8 13 nC
Threshold gate charge QG(TH) VDS = -6 V,I D = -3.3A, 0.2 nC
Gate-Source Charge QGS VGS =-4.5V 1.2 nC
Gate-Drain Charge QGD 2.2 nC
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage VSD VGS = 0V,IS = -1.6A -0.8 V

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 WPM2341
Typical Characteristics (TJ = 25°C unless otherwise noted)

20 20
VGS =-5 thru -2.5 V TC = - 55 °C

16 -2 V 16
25 °C
-I D - Drain Current (A)

-I D - Drain Current (A)

125 °C

12 12

8 8
-1.5 V

4 4

-1 V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5

-VDS - Drain-to-Source Voltage (V) -V GS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.10 900

750
0.08
R DS(on) - On-Resistance (Ω)

VGS =-2.5 V
C - Capacitance (pF)

600
Ciss
0.06

450

0.04 VGS =-4.5 V

300

0.02
150 Coss

Crss
0.00 0
0 4 8 12 16 20 0 4 8 12 16 20

-I D - Drain Current (A) -VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

5 1.5

VDS =-6 V 1.4 VGS =-4.5 V

-VGS - Gate-to-Source Voltage (V)

4 ID =-3.3 A ID =-3.3 A
1.3
R DS(on) - On-Resistance

1.2
(Normalized)

3
1.1

1.0
2
0.9

0.8
1
0.7

0 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Will Semiconductor Ltd. 3 2015/08/25 – Rev. 1.9

 WPM2341
Typical Characteristics (TJ = 25°C unless otherwise noted)

20 0.15

10
0.12

R DS(on) - On-Resistance (Ω)

-I S - Source Current (A)

ID =-3.3 A
TJ = 150 °C 0.09
ID = - 2 A
TJ = 25 °C
1
0.06

0.03

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5

-VSD - Source-to-Drain Voltage (V) -VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4 12

0.3 10
ID = -250μA
V GS(th) Variance (V)

0.2 8
Power (W)

0.1 6

0.0 4
TA = 25 °C

- 0.1 2

- 0.2 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100
IDM Limited
Limited by RDS(on)*

10
P(t) = 0.0001
-I D - Drain Current (A)

P(t) = 0.001
1
ID(on)
P(t) = 0.01
Limited

P(t) = 0.1
TA = 25 °C P(t) = 1
0.1 Single Pulse
P(t) = 10
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area

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 WPM2341
Typical Characteristics (TJ = 25°C unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2 Notes:

0.1 PDM

0.1
t1
0.05
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

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 WPM2341
Power Dissipation Characteristics
1. The package of WPM2341 is SOT23-3, surface mounted on FR4 Board using 1 in sq pad sizeˈ
2 oz CuˈR șJA is 125 ć/W.
2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta +
R șJA* PD , the maximum power dissipation is determined by R șJA .
3. The R șJA is the thermal impedance from junction to ambient, using larger PCB pad size can get
smaller R șJA and result in larger maximum power dissipation.

125 ć/W when mounted on

a 1 in2 pad of 2 oz copper.

Welding temperature curve

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 WPM2341

Packaging Information
SOT23-3 Package Outline Dimension

'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV
6\PERO
0LQ 0D[ 0LQ 0D[
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E 1.500 1.700 0.059 0.067
E1 2.650 2.950 0.104 0.116
e 0.950(BSC) 0.037(BSC)
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
ș 0° 8° 0° 8°

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