Common Emitter Configuration
Common Emitter Configuration
AIM:
To obtain input and output characteristics of a BJT in common
emitter configuration.
APPARATUS:
THEORY:
Input characteristics:
The curve between base current IB and base emitter voltage VBE at
constant emitter voltage VCE represents the input characteristics.
For plotting this VCE is kept constant. The base emitter voltage VBE
is varied with the help of potential divider R1 and the base current
IB is for each value of VBE is plotted. The graph characteristic
resembles that of a forward bias of a diode because the base
emitter section is forward bias. IB increases less rapidly with VBE
which shows that input resistance is higher.
Output characteristics:
The curve between collector current IC and collector emitter voltage
VCE at constant base current IB represents output characteristic.
For plotting this IB is kept fixed with the help of potential divider R2
the value of VCE is varied in steps and corresponding collector
current IC is noted. In this configuration the current gain is greater
than unity.
CIRCUIT DIAGRAM:
(0-100mA)
_ A
+
IC
(0-500µA) C
100KΩ _
+ A B
BC107 1KΩ
IB E
+
+ + (0-30V) RPS
+ (0-1V) VCC
V V (0-30V)
RPS VBB VBE _ _ VCE
_
(0-30V)
_
MODEL GRAPHS:
IB = 20µA
Input characteristics:
VCE = 5V VCE = 10V
VBE (V) IB (µA) VBE (V) IB (µA)
Output characteristics:
IB = 20µA IB = 40µA
VCE (V) IC (mA) VCE (V) IC (mA)
PROCEDURE:
PRECAUTIONS:
RESULT: