FDMS0310AS N-Channel PowerTrench® SyncFETTM

August 2014

FDMS0310AS
N-Channel PowerTrench® SyncFETTM
30 V, 22 A, 4.3 mΩ
Features General Description
„ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A The FDMS0310AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
„ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest
„ Advanced package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance.This
and high efficiency device has the added benefit of an efficient monolithic Schottky
body diode.
„ SyncFETTM Schottky Body Diode
„ MSL1 robust package design Applications
„ 100% UIL tested „ Synchronous Rectifier for DC/DC Converters

„ RoHS Compliant „ Notebook Vcore/GPU low side switch

„ Networking Point of Load low side switch
„ Telecom secondary side rectification

Top Bottom
Pin 1
S D 5 4 G
S
S
G D 6 3 S

D 7 2 S
D D S
D 8 1
D
D
Power 56

MOSFET Maximum Ratings TA= 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 22
-Continuous (Silicon limited) TC = 25°C 80
ID A
-Continuous TA = 25°C (Note 1a) 19
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 33 mJ
Power Dissipation TC = 25°C 41
PD W
Power Dissipation TA = 25°C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 3.0
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMS0310AS FDMS0310AS Power 56 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMS0310AS Rev.C2
 FDMS0310AS N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Drain to Source Breakdown Voltage
BVDSST VGS = 0 V, Transient = 100 ns 33 V
Transient
ΔBVDSS Breakdown Voltage Temperature
ID = 10 mA, referenced to 25°C 23 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.5 3.0 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 10 mA, referenced to 25°C -4 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 19 A 3.6 4.3
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 17 A 4.5 5.2 mΩ
VGS = 10 V, ID = 19 A, TJ = 125°C 4.8 6.0
gFS Forward Transconductance VDS = 5 V, ID = 19 A 103 S

Dynamic Characteristics
Ciss Input Capacitance 1715 2280 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 655 870 pF
f = 1MHz
Crss Reverse Transfer Capacitance 75 110 pF
Rg Gate Resistance 0.7 2.5 Ω

Switching Characteristics
td(on) Turn-On Delay Time 9.0 18 ns
tr Rise Time VDD = 15 V, ID = 19 A, 3.9 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 25 40 ns
tf Fall Time 3.2 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 27 37 nC
Qg Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, 13 19 nC
Qgs Gate to Source Charge ID = 19 A 4.2 nC
Qgd Gate to Drain “Miller” Charge 3.7 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8
VSD Source-Drain Diode Forward Voltage V
VGS = 0 V, IS = 19 A (Note 2) 0.8 1.2
trr Reverse Recovery Time 24 38 ns
IF = 19 A, di/dt = 300 A/μs
Qrr Reverse Recovery Charge 24 38 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 50 °C/W when mounted on a b. 125 °C/W when mounted on a

1 in2 pad of 2 oz copper. minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 33 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDMS0310AS Rev.C2
 FDMS0310AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted

100 5
VGS = 10 V

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80 μs
VGS = 6 V VGS = 3 V DUTY CYCLE = 0.5% MAX
80 VGS = 4.5 V 4
ID, DRAIN CURRENT (A)

VGS = 4 V
VGS = 3.5 V

NORMALIZED
60 3
VGS = 3 V
VGS = 3.5 V
40 2 VGS = 4 V

20 1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX VGS = 4.5 V VGS = 6 V VGS = 10 V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 16
ID = 19 A PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

SOURCE ON-RESISTANCE (mΩ)

VGS = 10 V 14 DUTY CYCLE = 0.5% MAX
1.4 ID = 19 A
12
rDS(on), DRAIN TO
NORMALIZED

1.2
10

1.0 8

6 TJ = 125 oC
0.8
4
TJ = 25 oC
0.6 2
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

100 100
PULSE DURATION = 80 μs
IS, REVERSE DRAIN CURRENT (A)

VGS = 0 V
DUTY CYCLE = 0.5% MAX
80 10
ID, DRAIN CURRENT (A)

VDS = 5 V TJ = 125 oC
TJ = 125 oC
60 1
TJ = 25 oC
TJ = 25 oC
40 0.1

TJ = -55 oC TJ = -55 oC
20 0.01

0 0.001
1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMS0310AS Rev.C2
 FDMS0310AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted

10 3000
ID = 19 A
VGS, GATE TO SOURCE VOLTAGE (V)

8 VDD = 15 V Ciss
1000

CAPACITANCE (pF)
6
VDD = 10 V Coss
VDD = 20 V
4
Crss
2 100
f = 1 MHz
VGS = 0 V
0 40
0 5 10 15 20 25 30 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

40 100
IAS, AVALANCHE CURRENT (A)

80
ID, DRAIN CURRENT (A)

TJ = 25 oC VGS = 10 V
10 60

TJ = 100 oC VGS = 4.5 V

40

TJ = 125 oC
20
o
RθJC = 3.0 C/W
Limited by Package
1 0
0.001 0.01 0.1 1 10 40 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

200 2000
100 1000
P(PK), PEAK TRANSIENT POWER (W)

100 μs
ID, DRAIN CURRENT (A)

10
1 ms
100
10 ms
1 THIS AREA IS
LIMITED BY rDS(on) 100 ms

1s
10
SINGLE PULSE
0.1 TJ = MAX RATED SINGLE PULSE
10 s
RθJA = 125 oC/W RθJA = 125 oC/W
DC
TA = 25 oC 1 TA = 25 oC
0.01 0.5
0.01 0.1 1 10 100200 10
-4
10
-3
10
-2
10
-1
1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMS0310AS Rev.C2
 FDMS0310AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
0.1 0.1
IMPEDANCE, ZθJA

0.05
0.02 PDM
0.01
0.01
t1
t2
SINGLE PULSE
0.001 NOTES:
o
RθJA = 125 C/W DUTY FACTOR: D = t1/t2
(Note 1b) PEAK TJ = PDM x ZθJA x RθJA + TA

0.0001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMS0310AS Rev.C2
 FDMS0310AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)

SyncFETTM Schottky body diode

Characteristics

Fairchild’s SyncFETTM process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high tem-
parallel with PowerTrench MOSFET. This diode exhibits similar perature and high reverse voltage. This will increase the power
characteristics to a discrete external Schottky diode in parallel in the device.
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS0310AS.

25 0.01

IDSS, REVERSE LEAKAGE CURRENT (A)

20 TJ = 125 oC
0.001
15
CURRENT (A)

di/dt = 300 A/μs TJ = 100 oC

10 0.0001

5
1E-5 TJ = 25 oC
0

-5 0.000001
0 50 100 150 200 0 5 10 15 20 25
TIME (ns) VDS, REVERSE VOLTAGE (V)

Figure 14. FDMS0310AS SyncFETTM body Figure 15. SyncFETTM body diode reverse
diode reverse recovery characteristic leakage versus drain-source voltage

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMS0310AS Rev.C2
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