Analog Electronics

EEC305

Subject Incharge
Mr. Omkar Vishwanath Pawar
Assistant Professor
Room No. 518
email: [email protected]

St. Francis Institute of Technology AEL

Department of Electrical Engineering Mr. Omkar Pawar 1
St. Francis Institute of Technology AEL
Department of Electrical Engineering Mr. Omkar Pawar 2
St. Francis Institute of Technology AEL
Department of Electrical Engineering Mr. Omkar Pawar 3
St. Francis Institute of Technology AEL
Department of Electrical Engineering Mr. Omkar Pawar 4
St. Francis Institute of Technology AEL
Department of Electrical Engineering Mr. Omkar Pawar 5
 CHAPTER 1 :- BIPOLAR JUNCTION TRANSISTOR

Reference : 1 . Electronics Devices & Circuits by Robert Boylestad

2 . Electronics Circuit Analysis & Design by Neamen D.A.

St. Francis Institute of Technology AEL

Department of Electrical Engineering Mr. Omkar Pawar
 BJT (Bipolar Junction Transistor)
 It is used to amplify (boost) electrical signal like voltage, current or power ( output signal can be
several hundred times larger than the input signal).

 In as an electronics switch in digital circuits.

 The BJT is a three-layer semiconductor device.

 The current in the transistor is due to the flow of both holes and electrons, hence the name Bipolar
The emitter region is heavily doped.

 The base region is lightly doped and very thin.

 Collector region is moderately doped.

 BJT

pnp npn
BJT Symbols
BJT Working
BJT Working
Transistor Currents

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶

npn
Transistor Currents

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶

pnp
 Numericals
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶

 1) A transistor has a following currents 𝐼𝐵 = 20 𝑚𝐴 and 𝐼𝑐 = 4.98 𝐴. Calculate 𝐼𝐸 .

 2) A transistor has a following currents 𝐼𝐸 = 100 𝑚𝐴 and 𝐼𝐵 = 1.96 𝑚𝐴. Calculate 𝐼𝐶 .
BJT Characteristics and Parameters

npn pnp
 BJT Characteristics and Parameters

 DC Beta (𝜷𝑫𝑪 ) : - The ratio of dc collector current (𝐼𝐶 ) to the dc base current (𝐼𝐵 ) is
called as dc beta (𝛽𝐷𝐶 ). Typical values of 𝛽𝐷𝐶 range from less than 20
to 200 or higher.

𝐼𝐶
𝛽𝐷𝐶 =
𝐼𝐵
 DC Alpha (𝜶𝑫𝑪 ) : - The ratio of dc collector current (𝐼𝐶 ) to the dc emitter current (𝐼𝐸 ) is
called as dc beta (𝛼𝐷𝐶 ). Typical values 𝑜𝑓 𝛼𝐷𝐶 range from 0.95 to
0.99 or greater.(But 𝛼𝐷𝐶 is always less than 1)

𝐼𝐶
𝛼𝐷𝐶 =
𝐼𝐸
 Numericals

 1) Determine the dc current gain 𝛽𝐷𝐶 and the emitter current 𝐼𝐸 for a transistor where 𝐼𝐵 =
50 μA and 𝐼𝐶 = 3.65 mA
Ideal DC Model of npn transistor
 BJT Circuit Analysis

Consider,
𝐼𝐵 = dc base current
𝐼𝐸 = dc emitter current
𝐼𝐶 = dc collector current
𝑉𝐵𝐸 = dc voltage at base with respect to emitter
𝑉𝐶𝐵 = dc voltage at collector with respect to base
𝑉𝐶𝐸 = dc voltage at collector with respect to emitter
 BJT Circuit Analysis

 The base-bias voltage source, VBB, forward-biases the base-emitter junction, and the
collector-bias voltage source, VCC, reverse-biases the base-collector junction.

 When the base-emitter junction is forward-biased, it is like a forward-biased diode and has
a nominal forward voltage drop of 𝑉𝐵𝐸 ≅ 0.7 𝑉

 Since the emitter is at ground (0 V), by Kirchhoff’s voltage law, the voltage across 𝑅𝐵 is
𝑉𝑅𝐵 = 𝑉𝐵𝐵 −𝑉𝐵𝐸

 By Ohm’s law, 𝑉𝑅𝐵 = 𝐼𝐵 𝑅𝐵

 BJT Circuit Analysis

 Since the emitter is at ground (0 V), by Kirchhoff’s voltage law, the voltage across 𝑅𝐵 is
𝑉𝑅𝐵 = 𝑉𝐵𝐵 −𝑉𝐵𝐸

 By Ohm’s law, 𝑉𝑅𝐵 = 𝐼𝐵 𝑅𝐵

 Substitute for 𝑉𝑅𝐵 ,

𝐼𝐵 𝑅𝐵 = 𝑉𝐵𝐵 −𝑉𝐵𝐸

𝑉𝐵𝐵 −𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵
 BJT Circuit Analysis

 The voltage at the collector with respect to the grounded emitter is

𝑉𝐶𝐸 = 𝑉𝐶𝐶 −𝑉𝑅𝐶

 Since, 𝑉𝑅𝐶 = 𝐼𝐶 𝑅𝐶

 The voltage at the collector ,

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶

Where 𝐼𝐶 = 𝛽𝐷𝐶 *𝐼𝐵

 The voltage across the reverse-biased collector-base junction is

𝑉𝐶𝐵 = 𝑉𝐶𝐸 −𝑉𝐵𝐸
 Numericals

 Determine 𝐼𝐵 , 𝐼𝐶 , 𝐼𝐸 , 𝑉𝐵𝐸 , 𝑉𝐶𝐸 , and 𝑉𝐶𝐵 in the following circuit. The transistor has a 𝛽𝐷𝐶 =
150.
Need of Proper Biasing
Need of Proper Biasing
Need of Proper Biasing
 BIASING TECHNIQUES OF BJT

1) Base Bias
2) Voltage Divider Bias
3) Emitter Bias
BASE BIAS METHOD

𝑉𝐵𝐵 −𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵

𝐼𝐶 = 𝛽𝐷𝐶 *𝐼𝐵

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
BASE BIAS METHOD with Single Supply

𝑉𝐵𝐵 −𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵 𝑉𝐶𝐶 −𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵
𝐼𝐶 = 𝛽𝐷𝐶 *𝐼𝐵
𝐼𝐶 = 𝛽𝐷𝐶 *𝐼𝐵

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶

DC LOAD Line
DC LOAD Line

𝑉𝐶𝐶
𝐼𝐶(𝑠𝑎𝑡) =
𝑅𝐶

𝑉𝐶𝐸(𝑜𝑓𝑓) = 𝑉𝐶𝐶
VOLTAGE DIVIDER BIAS METHOD

𝑅2
𝑉𝐵 = ∗𝑉
𝑅1 + 𝑅2 𝐶𝐶

𝑉𝐸 = 𝑉𝐵 −𝑉𝐵𝐸

𝑉𝐸
𝐼𝐸 =
𝑅𝐸

𝐼𝐶 ≅ 𝐼𝐵

𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 (𝑅𝐶 +𝑅𝐸 )

VOLTAGE DIVIDER BIAS METHOD
𝑉𝐶𝐶
𝐼𝐶(𝑠𝑎𝑡) =
𝑅𝐶 + 𝑅𝐸

𝑉𝐶𝐸(𝑜𝑓𝑓) = 𝑉𝐶𝐶
EMITTER BIAS METHOD

𝑉𝐸𝐸 −𝑉𝐵𝐸
𝐼𝐸 = for 𝑅𝐵 ignored
𝑅𝐸

𝑉𝐶 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶

𝑉𝐸𝐸 − 𝑉𝐵𝐸
𝐼𝐸 = 𝑅 for 𝑅𝐵 considerd
𝑅𝐸 − 𝛽𝐵