SMD Type MOSFET

P-Channel MOSFET
AO4485 (KO4485)

SOP-8 Unit:mm

■ Features
● VDS (V) =-40V
● ID =-10 A (VGS =-10V)
● RDS(ON) ＜ 15mΩ (VGS =-10V) 1.50 0.15

+0.04
0.21 -0.02
● RDS(ON) ＜ 20mΩ (VGS =-4.5V)

1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
4 Gate 8 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol 10 Sec Steady State Unit
Drain-Source Voltage VDS -40
V
Gate-Source Voltage VGS ±20
TA=25°C -12 -10
Continuous Drain Current ID
TA=70°C -9 -8
A
Pulsed Drain Current IDM -120
Avalanche Current IAR -28
Repetitive avalanche energy L=0.3mH EAR 118 mJ
TA=25°C 3.1 1.7 W
Power Dissipation PD
TA=70°C 2 1.1
Thermal Resistance.Junction- to-Ambient RthJA 40 75
℃/W
Thermal Resistance.Junction- to-Case RthJC - 24
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

P-Channel MOSFET
AO4485 (KO4485)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -40 V
VDS=-40V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS μA
VDS=-40V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -1.7 -2.5 V
VGS=-10V, ID=-10A 15
Static Drain-Source On-Resistance RDS(On) VGS=-10V, ID=-10A TJ=125℃ 23 mΩ
VGS=-4.5V, ID=-8A 20
On state drain current ID(ON) VGS=-10V, VDS=-5V -120 A
Forward Transconductance gFS VDS=-5V, ID=-10A 25 S
Input Capacitance Ciss 2500 3000
Output Capacitance Coss VGS=0V, VDS=-20V, f=1MHz 260 pF
Reverse Transfer Capacitance Crss 180
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 2.5 6 Ω
Total Gate Charge (10V) 42 55
Qg
Total Gate Charge (4.5V) 18.6
VGS=-10V, VDS=-20V, ID=-10A nC
Gate Source Charge Qgs 7
Gate Drain Charge Qgd 8.6
Turn-On DelayTime td(on) 9.4
Turn-On Rise Time tr VGS=-10V, VDS=-20V, 20
Turn-Off DelayTime td(off) RL= 2Ω, RGEN=3Ω 55 ns
Turn-Off Fall Time tf 30
Body Diode Reverse Recovery Time trr 38 49
IF=-10A, dI/dt=100A/us
Body Diode Reverse Recovery Charge Qrr 47 nC
Maximum Body-Diode Continuous Current IS -3 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

Note : The static characteristics in Figures 1 to 6 are obtained using t ≤ 300us pulses, duty cycle 0.5% max.

■ Marking
4485
Marking
KC****

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SMD Type MOSFET

P-Channel MOSFET
AO4485 (KO4485)
■ Typical Characterisitics
120 100
VDS= -5V
-4.5V
100 80
-10V

80 -4V
60
ID (A)

ID(A)
60

-3.5V 40
40
125°C
20
20
VGS= -3V 25°C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

20 1.8

VGS= -10V
Normalized On-Resistance

18 VGS= -4.5V 1.6 ID= -10A

RDS(ON) (mΩ )

16 1.4 VGS= -4.5V

ID= -7.5A
14 VGS= -10V 1.2

12 1.0

10 0.8
0 4 8 12 16 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

35 1E+02
ID= -10A
1E+01
30
1E+00
RDS(ON) (mΩ )

25 1E-01
-IS (A)

125°C 125°C
1E-02
20
1E-03
25°C 25°C
15
1E-04

10 1E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 SMD Type MOSFET

P-Channel MOSFET
AO4485 (KO4485)
■ Typical Characterisitics

10 4000
VDS= 15V
ID= -10A 3500
8
3000 Ciss

Capacitance (pF)
2500
-VGS (Volts)

6
2000
4 1500
Crss
1000
2 Coss
500

0 0
0 5 10 15 20 25 30 35 40 45 0 10 20 30 40
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 1000
TJ(Max)=150°C
TA=25°C
100
10µs
100
Power (W)

10
-ID (Amps)

100µs

1 1ms
RDS(ON) 10ms 10
limited 100ms
0.1 TJ(Max)=150°C 10s
TA=25°C DC
0.01 1
0.1 1 10 . 100 0.0001 0.01 1 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E) to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=75°C/W
Thermal Resistance

0.1

PD
0.01
Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

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