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Introduction To Semiconductors)

1. The document introduces semiconductors and discusses their atomic structure and energy band theory. Semiconductors have a small forbidden energy gap compared to insulators. 2. Intrinsic semiconductors contain small amounts of free electrons and holes. Extrinsic semiconductors are doped with impurities to increase the number of majority carriers. N-type uses donors to produce extra electrons. P-type uses acceptors to produce extra holes. 3. The conductivity, carrier concentration, and types of majority and minority carriers in semiconductors depend on whether they are intrinsic, N-type, or P-type. Doping allows control of the conductivity for applications in devices.

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13 views

Introduction To Semiconductors)

1. The document introduces semiconductors and discusses their atomic structure and energy band theory. Semiconductors have a small forbidden energy gap compared to insulators. 2. Intrinsic semiconductors contain small amounts of free electrons and holes. Extrinsic semiconductors are doped with impurities to increase the number of majority carriers. N-type uses donors to produce extra electrons. P-type uses acceptors to produce extra holes. 3. The conductivity, carrier concentration, and types of majority and minority carriers in semiconductors depend on whether they are intrinsic, N-type, or P-type. Doping allows control of the conductivity for applications in devices.

Uploaded by

ammar.s
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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‫اﻟﺠﺰء اﻷول‬

‫ﻣﺎدة اﻷﻟﻜﺘﺮوﻧﯿﺎت‬
‫اﻟﻤﺮﺣﻠﺔ اﻟﺜﺎﻟﺜﺔ‬
‫ﻗﺴﻢ اﻟﻔﯿﺰﯾﺎء‬
‫د‪ .‬ﻋﺒﺪاﻟﻜﺮﯾﻢ زﯾﺪان ﺧﻠﻒ‬

‫)‪Introduction to Semiconductors‬‬

‫‪1‬‬
CRO

Gas-Filled Tubes

Electron Microscope Oscilloscope

Electron Gun

2
Free Electrons

Surface barrier

3
work function

Thermionic Emission

Thermionic emission

Tungsten
2%
Barium Ba Thorium
Strontium Sr

Richardson-
Dushman equation

4
1-1 b

5
Field Emission

Field emission

cold cathode emission

6
Secondary Emission

Secondary Emission

secondary electrons
Primary electrons

7
Photo Electric Emission

photo electric emission

h f

8
b

A
D l

Vacuum Tubes

Electrodes

9
Diode

Triode

Tetrode

stray capacitance

Screen Grid

10
Pentode

suppressor grid

1947

11
Atomic Structure

(1.602X10-19C)

12
Valence electron
Valence shell

Ne

Ne 2n 2 (1 5)

n
For n=1, Ne = 2
n=2, Ne = 8
n=3, Ne = 18
n=4, Ne = 32

core
29 Cu

13
29 +e
28
+e

Ge Si

14
Energy Bands Theory in Solids

(Crystalline Structure)
(Crystal

15
(band)

273 oC

(Conduction band)

(free electrons)

(Forbidden Energy gap) (Energy gap)

16
Fermi level

E f(E)
T

1
f( E ) ( E E f ) / kT
(1 6)
1 e
Ef

k=1.38X10-23 J/K k

If T 0k
0 for E E f
f(E)
1 for E E f

f(E)=0
Fermi energy f(E)=1

E=Ef
If E E f and T 0k
1
f( E )
f
2
Fermi level
50%

17
(Conductors)

Fermi
Level

300K

18
(Insulators)

5 eV

19
: Semiconductors)

1eV

1.21eV 0.785eV

1.1eV 0.72eV

negative temperature coefficient

T
4
For Si , E g 1.21 3.6 10 T (eV) , where T in K
4
For Ge , E g 0.785 2.23 10 T (eV) , where T in K

20
Intrinsic Semiconductors

Intrinsic semiconductor material

Covalent
Bonds

-273oC

21
Hole Free electron
(electron-hole pair)

positive charge

22
Recombination

nsec Lifetime
msec

23
electron current

24
hole current

I I electron I hole (1 7)

drift velocity

25
26
1-12
1-13

1-8

1-15

Ohm's Law

conductivity

1-17 1-16

27
K

Diffusion
Current

28
300K

Doping

extrinsic semiconductor
Impurity atoms

108

108

29
N-Type
Type Semiconductor N

Arsenic As
Antimony Sb Bismuth Bi Phosphorus P

0.05 eV
0.01 eV

30
Donor energy level ED

N N

Donors

31
majority carrier N
minority carriers

32
109 1012
100000 107

P-Type Semiconductor P

B Indium In Gallium Ga
Boron

33
acceptors
EA
Acceptor energy
0.16eV 0.01eV level

34
P

35
p

36
1-22 1-21 1-20

37
38
2.5eV
4300

2400oC
100oC

35oC

300K

39

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