‫اﻟﺠﺰء اﻟﺜﺎﻧﻲ‬

‫ﻣﺎدة اﻷﻟﻜﺘﺮوﻧﯿﺎت‬
‫اﻟﻤﺮﺣﻠﺔ اﻟﺜﺎﻟﺜﺔ‬
‫ﻗﺴﻢ اﻟﻔﯿﺰﯾﺎء‬
‫د‪ .‬ﻋﺒﺪاﻟﻜﺮﯾﻢ زﯾﺪان ﺧﻠﻒ‬
pn-Junction pn
 n Anode p
Cathode
n

Depletion Layer

pn
N
P

pn
 pn

pn

p
n
p
p
core

n p
p
n

pn

p n
p
p n
n n
 Orbit
p

energy hill

n p
Barrier
Potential
e

h
T
 q T

0.7V
0.3V

Nd=1015cm-3 Na=1018cm-3
ni=1.45X1010cm-3

kT N N 19 23
Vbi ln ( D 2 A ) , T 300 K , q 1.6 10 C, k 1.38 10 J /K
q ni
 (1.38 10 23 ) 300 (1015 ) (1018 )
Vbi ln [ ]
1.6 10 19 (1.45 1010 ) 2

4 10 33
Vbi 258 .75 10 ln [ ]
2.1025 10 20
Vbi 0.025875 ln [4.756 1012 ]

Vbi 0.7553 V

Unbiased

Forward Bias

N P
Forward Bias

pn

p
 n
A p

n
B
 P

LED

Reverse Bias

n p

pn
 Transient Current

10MHz

Reverse Saturation Current

p
IS n

pn
5nA IS 10oC
40nA 45oC 20nA 35oC 10nA 25oC
55oC

Surface-Leakage Current

pn

Surface-Leakage Resistance RSL

VR
RSL (2 20)
I SL

VR
 ISL

Breakdown Voltage

50V

avalanche breakdown
 25 V 2 nA
35 V

VR
RSL
I SL
25V
RSL 9
12 .5 10 9
2 10 A

35V
 VR
I SL
RSL
35 V
I SL 2.8 10 9 A 2.8 nA
12 .5 10 9

The Forward Region

VB
Knee-Voltage
VK

0.7 V for Si
VK Vbi
0.3V for Ge
n p

rB rp rn (2 21)

PD

PD VF I F (2 22)

IF(max)
Data sheet

Pmax VmaxI max (2 23)

Vmax
The Reverse Region

Breakdown Voltage
 VD
VTH
ID I s (e 1) (2 24)

Is ID
VD

2 1
VTH 1

KT
VTH (2 25)
q

q T K
 11600 V D
T
ID I s (e 1) (2 26)
 2mV

VB 0.002 T (2 27)
 25oC 0.7V
0 oC 100oC

100oC

VB 0.002 T , T (100 oC 25 oC )
VB 0.002 (100 oC 25 oC ) 0.15V

0.15V
100oC

VB 0.7 0.15 0.55V

0oC

VB 0.002 T , T (0 oC 25 oC )
VB 0.002 (0 oC 25 oC ) 0.05V
 0.05V

VB 0.7 0.05 0.75V

Ideal Diode
 rB

VB
rB
VD

VD VB I F rB (2 28)
Load Line and Operating Point

VS I D RS V D 0
VS V D
ID (2 28)
RS
 2V
RS

2 VD
ID
100

2 VD
ID
100
(a) for VD 0, I D 0.02 A 20 mA , (0,20 )
(b) for I D 0, VD 2V , (2,0)
 Saturation VD=0, ID=20mA
Cutoff VD=2V, ID=0

VD=0.75V, ID=12.5mA
n p

10V 10nA
40V

25oC 30nA
75oC 20nA
75oC

0oC-75oC