KST2222A — NPN Epitaxial Silicon Transistor

October 2014

KST2222A
NPN Epitaxial Silicon Transistor

Features 3
• General-Purpose Transistor

SOT-23
1
1. Base 2. Emitter 3. Collector

Ordering Information
Part Number Marking Package Packing Method
KST2222AMTF 1P SOT-23 3L Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
TSTG Storage Temperature Range -55 to +150 °C

Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

Power Dissipation 350 mW
PD
Derate Above 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KST2222A Rev. 1.1.0
 KST2222A — NPN Epitaxial Silicon Transistor
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Max. Unit

BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6 V
ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 0.01 μA
VCE = 10 V, IC = 0.1 mA 35
VCE = 10 V, IC = 1 mA 50
(2)
hFE DC Current Gain VCE = 10 V, IC = 10 mA 75
VCE = 10 V, IC = 150 mA 100 300
VCE = 10 V, IC = 500 mA 40
IC = 150 mA, IB = 15 mA 0.3
VCE(sat) Collector-Emitter Saturation Voltage(2) V
IC = 500 mA, IB = 50 mA 1.0
IC = 150 mA, IB = 15 mA 0.6 1.2
VBE(sat) Base-Emitter Saturation Voltage(2) V
IC = 500 mA, IB = 50 mA 2.0
IC = 20 mA, VCE = 20 V,
fT Current Gain Bandwidth Product 300 MHz
f = 100 MHz
VCB = 10 V, IE = 0,
Cob Output Capacitance 8 pF
f = 1 MHz
IC = 100 μA, VCE = 10 V,
NF Noise Figure 4 dB
RS = 1 kΩ, f = 1 MHz
VCC = 30 V, IC = 150 mA,
tON Turn-On Time 35 ns
VBE = 0.5 V, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
tOFF Turn-Off Time 285 ns
IB1 = IB2 = 15 mA

Note:
2. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KST2222A Rev. 1.1.0 2
 KST2222A — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics

0.4

250
V ce=5V B=10

125C

Vce(sat), Saturation Current,[V]

0.3
hfe, Current Gain

200
75C

25C
150 0.2
125C

100
0.1

75C
50
25C

1 10 100 1 10 100
C o lle c to r C u rre n t, [m A ] Collector Current, [mA]

Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage

1.0 100
B=10 Leakage current of Collector - Base(nA)
0.9
V C B = 60V
Vbe(sat), Saturation Current,[V]

0.8

10
0.7

0.6
25C

0.5 1
75C
0.4
125C
0.3
0.1 1 10 100 25 50 75 100 125 150

Collector Current, [m A] Tem perature, ['C ]

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Base Leakage Current

0.4

IE = 0
f = 1M H z

10 0.3
PD - Power Dissipation (W)
Cob [pF], Capacitance

0.2

0.1

0.1 0.0
1 10 100 0 25 50 75 100 125 150
O
V C B [V ], C o lle cto r-B a se V o lta g e Temperature, [ C]

Figure 5. Output Capacitance Figure 6. Power Dissipation vs.

Ambient Temperature

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KST2222A Rev. 1.1.0 3
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Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
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Obsolete Not In Production
The datasheet is for reference information only.
Rev. I76

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KST2222AMTF