Measurement of forward and reverse current

Applications of PN junction diode

PN junction diode can be used as rectifier, a device that converts
alternating current, which periodically reverses direction, to direct
current, which flows in only one direction

Half Wave Rectifier

(a rectifier which is used for
converting the one-half
cycle of
AC input to DC output)
Full Wave rectifier (Center Tap)
(A rectifier that converts the
complete cycle of alternating
current into pulsating DC)
 Reverse Breakdown

 Ordinary p-n junction normally does not conduct when it is reverse biased.
 From I-V characteristics of diode, it is seen that the reverse saturation
current (IO) in a diode is negligibly small. However, if the reverse bias
voltage is increased gradually, a point is reached where the junction breaks
down and starts conducting heavily. This critical value of voltage is called
the breakdown voltage.
 Once the breakdown occurs, even a very small increase in voltage
causes large change in the reverse current.
 In normal operation the condition of breakdown should be avoided as
it permanently damages the crystal structure of the two regions and
renders the junction useless. As the breakdown phenomenon is
irreversible and damages the diode permanently, ordinary diodes are
never operated in this region.
 Mechanisms of Reverse Breakdown

The breakdown which occurs in reverse biased diode

are mainly due to two different mechanisms.

(i) Avalanche breakdown

(ii) Zener breakdown

Avalanche breakdown
Avalanche breakdown:

This type of breakdown occurs in lightly doped junctions when high reverse
voltage is applied across the junction. The avalanche breakdown occurs as
follows:
(i) When a high reverse bias is applied to the diode, the electric field in the
depletion region becomes sufficiently high. The minority electrons entering
the depletion region from the p-side acquire high kinetic energy and
accelerate at high velocities.

(ii) The high energy electrons collide with other atoms and knocks off more
electrons from some of the covalent bonds. The new carriers in turn
produce additional charge carriers and the process multiplies and finally an
avalanche of charge carriers is produced in a very short time which gives
rise to a large reverse current. This results in avalanche breakdown.

(iii) The avalanche breakdown is self-sustaining as long as the reverse voltage

is present across the depletion region. The breakdown voltage is found to
increase with temperature.
 Zener breakdown
Narrow depletion region due to thin and heavily doped p-n junction
Zener breakdown:

This type of breakdown occurs in thin and heavily doped p-n junctions
when reverse voltage is applied across the junction. The zener
breakdown occurs as follows:

(i) When the reverse biased voltage applied to the diode is increased,
the narrow depletion region in the p-n junction generates strong
electric field.

(ii) When the reverse biased voltage reaches close to a critical voltage
known as the zener voltage, the electric field in the depletion region
is strong enough to pull electrons from their valence band. The
valence electrons which gains sufficient energy from the strong
electric field of depletion region will break bonding with the parent
atom. These valance electrons will then become free electrons which
will carry electric current from one place to another.
(iii) At zener breakdown region, a small increase in voltage will rapidly
increases the electric current.

(iv) The zener breakdown requires relatively low reverse voltage for its
operation.
Zener Breakdown

1. This occurs at junctions which being heavily doped have narrow

depletion layers
2. This breakdown voltage sets a very strong electric field across this
narrow layer.
3. Here electric field is very strong to rupture the covalent bonds
thereby generating electron hole pairs. So even a small increase in
reverse voltage is capable of producing large number of current
carriers. This leads to Zener breakdown.

Avalanche breakdown

1. This occurs at junctions which being lightly doped have wide depletion layers.
2. Here electric field is not strong enough to produce the breakdown.
3. Here minority carriers collide with semiconductor atoms in the depletion region,
which breaks the covalent bonds and electron-hole pairs are generated. Newly
generated charge carriers are accelerated by the electric field which results in
more collision and generates avalanche of charge carriers. This results in
avalanche breakdown.
 Zener Diode
A Zener diode is a heavily doped pn junction diode that is designed to
operate in the reverse direction.

The symbol of zener diode is similar to the normal p-n junction diode,
but with bend edges on the vertical bar.

A Zener diode not only allows current to flow from anode to cathode
(forward current) but also in the reverse direction (reverse current) on
reaching a voltage known as the Zener breakdown voltage or Zener
voltage. It is denoted by Vz.
Zener diode is a main component to design voltage regulator circuit for
DC power supply.
 I-V Characteristics of Zener diode

Zener Breakdown
voltage
The I-V characteristics of a Zener diode can be divided into two parts as
follows:

(i) Forward Characteristics: The first quadrant in the above graph

represents the forward characteristics of a Zener diode. From the graph,
it is clear that it is almost identical to the forward characteristics of any
other P-N junction diode.
.
(ii) Reverse Characteristics: When a reverse voltage is applied to a
Zener voltage, initially a small reverse saturation current Io flows across
the diode. This current is due to thermally generated minority carriers.
As the reverse voltage is increased, at a certain value of reverse voltage,
the reverse current increases drastically and sharply. This is an indication
that the breakdown has occurred. This breakdown voltage is known as
Zener breakdown voltage or Zener voltage, denoted by Vz.
 Working of a Zener Diode in reverse bias

 A Zener diode operates just like a normal diode when it is forward-

biased.
 However, when connected in reverse biased mode, a small reverse
saturation current flows through the diode.

I0

-
 As the reverse voltage increases to the predetermined zener
breakdown voltage (Vz), current starts flowing through the diode.

 The current increases to a maximum, which is determined by the

series resistor, after which it stabilizes and remains constant over a
wide range of applied voltage.
RS

V > Vz + Vz = 10 V
-

Therefore, for proper working of a zener diode, it must have:

(i) reverse biasing voltage > VZ
(ii) current in the circuit < IZmax
 Operation region of zener diode:
• Forward bias region- operation same as normal diode.
• Reverse bias region -small current flows.
• Breakdown region – huge current flows. This is the region where the Zener
voltage is constant
• For normal diode, breakdown voltage is capable to destroy the diode but with
zener diode the current is limited by connecting a series resistor.
 Applications of Zener Diode

 Zener diodes are used in voltage stabilizers.

 Zener diodes are used in clipping and clamping circuits.

 Zener diodes are used in various protection circuits.