BONGA UNIVERSITY

COLLEGE OF NATURAL AND COMPUTATIONAL

SCIENCE

DEPARTMENT OF PHYSICS

MODULE OF ELECTRONICS EXIT EXAM

By: ABEBU.D (MSc)

December, 2022
BONGA, ETHIOPIA

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A semiconductor material is one whose electrical properties lie in between
those of insulators and good conductors.
Examples are: germanium and silicon. In terms of energy bands,
semiconductors can be defined as those materials which have almost an
empty conduction band and almost filled valence band with a very narrow
energy gap (of the order of 1 eV) separating the two.
An intrinsic semiconductor
 itis one which is made of the semiconductor material in its extremely
pure form. • Examples : Si, Ge
 The energy gap is so small that even at ordinary room temperature;
there are many electrons which possess sufficient energy to jump
across the small energy gap between the valence and the conduction
bands.
 Alternatively, an intrinsic semiconductor may be defined as one in
which the number of conduction electrons is equal to the number of
holes.
 Fermi Level: Fermi level is the term used to describe the top of the
collection of electron energy levels at absolute zero temperature. the
highest energy level which an electron can occupy the valance band at
0k is called Fermi energy (Ef ).
 Fermi level lies in the mid of forbidden gap in intrinsic
semiconductor

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 P-N junctions are fabricated from a monocrystalline piece of semiconductor
with both a P-type and N-type region in proximity at a junction.
• The transfer of electrons from the N side of the junction to holes
annihilated on the P side of the junction produces a barrier voltage. This is
0.6 to 0.7 V in silicon, and varies with other semiconductors.
• A forward biased PN junction conducts a current once the barrier
voltage is overcome. The external applied potential forces majority carriers
toward the junction where recombinetion takes place, allowing current flow.
• A reverse biased PN junction conducts almost no current. The applied
reverse bias attracts majority carriers away from the junction. This increases
the thickness of the nonconducting depletion region.
• Reverse biased PN junctions show a temperature dependent reverse
leakage current. This is less than a µA in small silicon diodes.

 When a small amount of chemical impurity is added to an intrinsic

semiconductor, then the resulting semiconductor material is known as
extrinsic semiconductor.
 The extrinsic semiconductor is also known as doped semiconductor.
 The process of adding impurity in the intrinsic semiconductor is known as
doping. The doping of semiconductors increases their conductivity
 Based on the type of doping, the extrinsic semiconductors are classified into
two types viz. N-type semiconductors and P-type semiconductors.
 When a pentavalent impurity is added to an intrinsic semiconductor, then the
resulting semiconductor is termed as N-type semiconductor.
 On the other hand, when a trivalent impurity is added to a pure
semiconductor, then the obtained semiconductor is known as P-type
semiconductor

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

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1. write the truth table for the circuits given in Fig. consisting of NOR gates only.
Identify the logic operations (OR, AND, NOT) performed by the two circuits

2. In a p-n junction diode, the current I can be expressed as

Where 𝐼o is called the reverse saturation current, 𝑉 is the voltage across the diode
and is positive for forward bias and negative for reverse bias, and

I is the current through the diode,

kB is the Boltzmann constant (8.6 × 10–5 eV/K) and
T is the absolute temperature. If for a given diode 𝐼0 = 5 × 10−12 A and 𝑇 =
300 K, then
a) What will be the forward current at a forward voltage of 0.6 V?
b) What will be the increase in the current if the voltage across the diode is
increased to 0.7 V?
c) What is the dynamic resistance?
d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

3. The number of silicon atoms per 𝑚𝑚3 is 5 × 1028. This is doped simultaneously
with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium.

Calculate the number of electrons and holes. Given that 𝑛𝑖 = 1.5 × 1016 𝑚–3. Is
the material n-type or p-type?

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various types of diode, iv characteristics of diodes and some
application of diodes as rectifiers
A diode is a two-terminal semiconductor device that conducts current
primarily in one direction.
The core of a diode is the junction of P-type semiconductor material
with N-type semiconductor material.
A diode can work in two ways:
a) Forward biased, where it permits current flow, or
b) Reverse biased, where it inhibits current flow.
It shows high resistance in reverse bias and low resistance in forward
bias

A.ZENER DIODE
 A Zener diode is comparable to the conventional P-N junction diode in
the forward bias, and allows a flow of current in the reverse direction
when linked in reverse bias.
 The applied voltage stretches beyond a particular limit defined as the
breakdown voltage, knee voltage, or Zenger voltage.
 The P-N junction of such diodes is copiously doped and designed to
conduct in the reverse direction.
 These diodes start conducting current at a specified breakdown voltage,
and continuously operate without any damage in the reverse bias.
 Zener diodes find use in voltage regulation, as the voltage drop over the
Diode remains constant over a broad range of applied voltage

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B.LIGHT EMITTING DIODE (LED)
 Light-emitting diodes (LEDs) are a type of diode that change
electrical energy into optical energy (light).
 LEDs are made from an extremely thin layer of heavily doped
semiconductor compound, such as Gallium Arsenide (GaAs),
Gallium Phosphide (GaP), Gallium Arsenide Phosphide (GaAsP),
Silicon Carbide (SiC), or Gallium Indium Nitride (GaInN).
 They are mixed at different ratios to produce a distinct
wavelength of color.
 Depending on the semiconductor material used and the amount
of doping,
 An LED emits a colored light at a particular spectral wavelength
when connected in forward bias.

C.SCHOTTKY DIODE
 A Schottky diode is unlike a standard P-N junction diode.
 They are constructed using a metal electrode bonded to an N-
type semiconductor.
 they have a metal compound on one side of the junction and
doped silicon on the other side,
 Schottky diodes have no depletion layer, and are known as
unipolar devices.
 Silicide is the most popular contact metal utilized for Schottky
diode construction.
 It is a highly conductive silicon and a metal compound.

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D.SHOCKLEY DIODE
 A Shockley diode is a four-layer diode with alternating P-type
and N-type material layers. It is also called a PNPN diode.
 The Shockley functions like a standard diode without any
trigger inputs.
 The flow of current ceases in the reverse biased condition, and
flows when it’s forward biased when the voltage across it
exceeds the break-over voltage.
 Such diodes have only two (ON or OFF) states, equivalent to a
thyristor without a gate terminal.

E.STEP RECOVERY DIODE

 A Step Recovery diode is a type of Diode with unusual doping and a

voltage-dependent variable capacitor.
 The doping density is least near the junction, and the charge
carriers’ density is also minimal near the junction.
 Because charge storage is negligible near the junction, this leads to
fast switching of the Diode from the ON state to the OFF state.
 Step Recovery Diodes can switch fast at low frequencies.
 They find use as charge-controlled switches. These diodes function
as ordinary diodes during low frequency, conducting when
forward biased and behaving like an open circuit during reverse
biased mode.
 However, they instantly change states when switched from forward
to reverse bias.

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  Step Recovery Diodes are also known as charge-storage diodes or
snap-off diodes.

E.TUNNEL DIODE
 It is essentially a densely doped P-N junction diode.
 Leo Esaki invented this diode type, hence the name.
 This diode is made of silicon materials like Germanium or Gallium
arsenide.
 The tunnel diode shows negative resistance, and when the voltage
increases, the current flow decreases.
 Tunnel diodes work based on the Tunnel Effect, a conduction
phenomenon in the semiconductor material in which the charge
carrier punches the barrier instead of climbing through it.
 Tunnel diodes show a negative resistance in their operating range.
 Therefore, they are generally used as amplifiers, oscillators, and in
many switching circuits

F.VARACTOR DIODE
A Varactor diode is a voltage-dependent P-N junction diode that always
works in reverse bias.
Its internal capacitance varies with the variation of the reverse voltage.
These can be used for storing charge, and are commonly used in those
applications where variable capacitance is required.
The following formula gives the capacitance of a varactor diode

where

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 Є – Permittivity of the semiconductor material
A – Area of PN-junction
W – Width of the depletion region

Some of other applications of varactor diodes are listed below:

 Small remote control circuits

 Signal modulation and demodulation
 Very low noise microwave parametric amplifiers
 Tuning circuits for FM radios y
 Transmitter or receiver tank circuits for auto-tuning
 Microwave frequency multipliers as a component of an LC resonant circuit
 Adjusting bridge circuits y Adjustable band pass filters
 RF phase shifters
 Varactor Diode in a Frequency multipliers

G.PELTIER DIODE
 A Peltier Diode is a type of diode based on the thermoelectric effect,
and it works opposite of the See beck effect.
 Heat is generated at the semiconductor’s two material junctions,
which then flows from one terminal to the other terminal.
 This flow is only in one direction equal to the direction of the current
flow.
 Heat is produced due to the electric charge created by the
recombination of minority charge carriers.
 The pellet array’s positive and negative charge carriers soak up heat
energy when the module is subjected to DC voltage.

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  The heat energy gets absorbed from the substrate surface and
subsequently released to the other opposite-side-located substrate.
 The heat absorptive surface becomes cold, and the opposing surface
where heat energy is released becomes hot—reversing the polarity
results in switched hot and cold sides.
 Peltier diodes are often used in heating and cooling applications, or as
sensors and heat engines for thermo-electric cooling.

H.CRYSTAL DIODE
 Crystal diodes are microwave semiconductor devices developed for
commercial use in mixers, detectors, and microwave receivers.
 They are also called Point-Contact Diodes.
 A Crystal diode is made of crystalline material in contact with a thin
wire called ‘cat whisker,’ which is made from a non-corrosive
material like gold.
 The whisker touches the face of the crystal and conducts electricity.
 During the manufacture, a relatively large current is passed from the
cat whisker to the crystal.
 This substantial current is the development of a small p-type material
region around that crystal in the point contact’s vicinity.
 Thus, a P-N junction is formed, which behaves in the same ways as a
normal P-N junction, but the characteristics are different.

I.AVALANCHE DIODE
 An Avalanche diode is a diode somewhat similar to a Zener diode,
but not identical.

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  Avalanche occurs in diodes when the reverse bias voltage across the
diode exceeds a specified value.
 It is designed to break down and conduct at a specified reverse bias
voltage.
 When an avalanche occurs, it generally causes catastrophic failure.
Therefore,
 avalanche diodes are designed to control the avalanche phenomenon
and tolerate avalanches caused by overvoltage without any damage.
 These diodes are usually used in protecting circuits against transient
high voltages, which can damage the circuit
 Avalanche breakdown is not reversible, which means that the P-N
junction is permanently damaged in avalanche breakdown condition,
while Zener breakdown is reversible.
 Avalanche diodes are used in applications to protect circuits with
high transients like power surges or lightning strikes.
 They are also a good choice in high voltage circuits, such as high
voltage multipliers, as well as Inductive loads like Motors, Relays,
and Solenoids, which upon interruption generate voltage transients

RECTIFIER DIODES

 A rectifier is a dispositive that ideally transforms the AC input voltage into a

DC voltage (voltage is always positive or zero).
 These diodes have the largest ratings and sometime can be quite big in
volume. As a rule of thumb, the bigger the diode (more pn surface junction
available for heat dissipation), the higher the ratings.
HALF-WAVE RECTIFIER

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  A half-wave rectifier is composed of a single diode that connects an AC
source to a load. In figure 3 the load is represented by a resistor.
 The diode conducts on AC voltage only when its anode is positive with
respect to the cathode (i.e. greater than 0.7 V for a silicon diode). The output
has therefore only a positive component with an average value

FULL-WAVE RECTIFIER

 In half-wave rectifiers, half of the power provided by the source is not used.
 To solve this problem, we have to use full-wave rectifiers.
 The minimum full-wave rectifier is composed of two diodes, but it requires a
center tapped transformer.
 The average voltage of a full-wave rectifier is:

EXAMPLE In half-wave rectification, what is the output frequency if the

input frequency is 50 Hz.
What is the output frequency of a full-wave rectifier for the same input
frequency?

Solution:
Input frequency = 50 Hz We know that for a half-wave rectifier, the output
frequency is equal to the input frequency. ∴

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 Output frequency = 50 Hz And for a full-wave rectifier, the output
frequency is twice the input frequency. ∴ Output frequency = 2 × 50 = 100
Hz

BIPOLAR JUNCTION TRANSISTOR (BJT)

o Transistors are electronic devices that can amplify voltages,
current and power by the application of a small signal voltage
on one lead.
o It is a three lead semiconductor device that acts as:
 an electrically controlled switch, or
 a current amplifier.
o Transistor is analogous to a faucet.
 Turning faucet’s control knob alters the flow rate of water
coming out from the faucet.
 A small voltage/current applied at transistor’s control lead
controls a larger current flow through its other two leads.
o Transistors have two basic functions “switching” (digital
electronics) and “amplification” (analog electronics)
o They are made by adding one additional semiconductor layer in
the p-n junction diode

TRANSISTOR TYPES: BJT, JFET, AND MOSFET

o Bipolar Junction Transistor (BJT) 

 NPN and PNP
o Junction Field Effect Transistor (JFET)
 N-channel and P-channel
o Metal Oxide Semiconductor FET (MOSFET)

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  Depletion type (n- and p-channel) and enhancement type (n-
and p-channel) BJT JFET
 A Semiconductor device consisting of two pn junctions formed by
sandwiching either p type or n type semiconductor between a pair of
opposite types is known as a transistor 
 Thus it is also well known by the name bipolar junction
transistor because its operation depends upon both the majority
and minority carriers.
 Accordingly, there are two types of transistors namely;
 NPN Transistor 
PNP Transistor
 NPN Transistor: A transistor in which two blocks of ntype
semiconductor are separated by a thin layer of p-type
semiconductor is known as NPN Transistor.
 PNP Transistor: A transistor in which two blocks of ptype
semiconductors are separated by a thin layer of n- type
semiconductor is known as PNP Transistor
 Every transistor has three terminals called emitter, base and
collector.

 Emitter
 The Section on one side of the transistor that supplies a large
number of majority carriers (electrons if emitter is n- type and
holes if the emitter is of p-type.
 The emitter is always forward biased with respect to base so
that it can supply a large number of majority carriers to its
junction with the base.
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  Base
 The middle section which forms two pn junctions between
emitter and collector is called base.
 The base form two circuits, one input circuit with emitter and
other output circuit with collector.
 The base emitter junction is forward biased, providing low
resistance to the emitter circuit.
 The base collector junction is reversed biased, offering high
resistance path to the collector circuit.
 The base is lightly doped and very thin so that it can pass on
most of the majority carriers supplied by emitter to the
collector.

 Collector
 The section on the other side of the transistor that collects the major
portion of the majority carriers supplied by the emitter is called
collector.
 The collector base junction is always reverse biased.
 Its main function is to remove majority carriers (or charges) from its
junction with base

GENERAL EQUATIONS
1. A crystal of silicon is doped with arsenic, that is, a small number of silicon
atoms are replaced by arsenic atoms.
a) What type of doping is involved in this case?
b) How will this affect the resistance of the semiconductor material and
the current that flows through it?

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2. Materials can be classified as conductors, semiconductors and insulators.
a) Give two examples of each of the three groups of materials listed
above
b) A Physics textbook states that ‘’…… n-type semiconductor material is
formed by doping a pure semiconductor with impurity atoms’’. What is meant
by the term ‘’n-type’’ semiconductor material?
3. A p-type semiconductor material is produced by adding impurity atoms to a
pure semiconductor material.
a) How many valence electrons will the impurity atoms have in their
outer shell?
b) How will adding these impurity atoms affect the resistance of the
material?
c) What will the net charge be on the semiconductor material after
adding the impurity atoms?
4. A n-type semiconductor material is produced by adding impurity atoms to a
pure semiconductor material.
a) How many valence electrons will the impurity atoms have in their
outer shell?
b) i) Will the valence band be filled with electrons?
ii) Where would any excess electrons be found?
c) How will adding these impurity atoms affect the resistance of the material?
d) What will the net charge be on the semiconductor material after adding the
impurity atoms?
5. State the names of the majority charge carriers in a:
a) N-type semiconductor material?
b) P-type semiconductor material?

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6. a) i) Draw a circuit diagram connected in reverse bias showing a p-n material
and a battery.
ii) Draw the equivalent diagram with an LED replacing the p-n material.
b) i) State the order of magnitude of the current flow in reverse bias.
ii) What is the current flow due to in this case?
7. a) i) Draw a circuit diagram connected in forward bias showing a p-n
material and a battery.
ii) Draw the equivalent diagram with an LED replacing the p-n material.
b) i) State the order of magnitude of the current flow in forward bias.
ii) What is the current flow due to in this case?
c) i) What is given off when an LED lights up in forward bias?
ii) In band theory, what is happening to the electrons when the LED lights up.
8. In the following circuit component X is used to drive a motor.

a) Name component X.
b) State the operation mode of component X.

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 a. State the names of the three groups of materials above A, B and C.
b. How would you compare the band gap between the semiconductor and the
insulator?
c. If a pure semiconductor material has an increase in temperature, what will
happen to:
i)The resistance of the material.
ii) The current carrying capabilities of the material.
iii) Some of the electrons in the valence band?

9. A single semiconducting crystal can be doped to produce a p-n junction diode.

Band A is the valence band and band B is the conduction band.

a) Label sections X, Y and Z in the diagram

b) State whether band A or band B has a higher energy level

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10. A p-n junction is used as a photodiode and a voltage is applied across it as
shown below

a) The irradiance of the light at the junction increases. Describe and explain how
this affects the current in the circuit.

b) The sensitivity of a certain photodiode is greatest when the incident photon has
energy of 2.1 x 10-19J. Calculate the wavelength of these photons

Multiple Choice Questions (MCQs)

1. In an intrinsic semiconductor, the Fermi level

A. Lies at the center of forbidden energy gap.

B. Is near the conduction band.
C. Is near the valence band.
D. May be anywhere in the forbidden energy gap.

2. The ratio of impurity atoms to intrinsic semiconductor atoms in an extrinsic

semiconductor is about.

A. 1:10 B. 1: C. 1: D. 1:

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3. In a P type material the Fermi level is 0.3 eV above the valence band. The
concentration of accepter atoms is increased. The new position of Fermi level is
likely to be

A. 0.5 eV above the valence band.

B. 0.2 eV above the valence band.
C. Below the valence band.
D. None of the above

4. Most commonly used semiconductor material is

A. Silicon
B. Germanium
C. Mixture of silicon and germanium
D. None of the above.

5. At room temperature a semiconductor material is

A. Perfect insulator
B. Conductor
C. Slightly conducting
D. Any one of the above.

6. For silicon, the energy gap at 300 K is

A. 1.1 W
B. 1.1 J s
C. 1.1 eV
D. None of these

7. The forbidden gap for germanium is,

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 A. 0.12 eV
B. 0.72 eV
C. 7.2 eV
D. None of these

8. The process of adding impurities to a pure semiconductor is called

A. Mixing
B. Doping
C. Diffusing
D. None of the above

9. The pentavalent impurities like antimony, arsenic, bismuth and phosphorus,

added to intrinsic semiconductors are called

A. Acceptor or P-type impurities

B. Donor or P-type impurities
C. Acceptor or N-type impurities
D. Donor or N-type impurities

10. Impurities like boron, aluminum, gallium or indium are added to intrinsic
semiconductor to form

A. N-type doped semiconductor

B. P-type doped semiconductor
C. A junction diode
D. All of these

11. In a N-type semiconductor, the position of Fermi-level

A. Is lower than the center of energy gap

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 B. Is at the center of energy gap
C. Is higher than the center of energy gap
D. Can be any where

12. The mobility of electrons in a material is expressed in unit of:

A. V/s
B. m2 /V-s
C. m 2 /s
D. J/K

13. In a metal

A. The electrical conduction is by electrons and holes

B. The conductivity decreases with the rise in temperature
C. The conduction band is empty
D. None of the above

14. The energy gap in a semiconductor

A. Increases with temperature

B. Does not change with temperature
C. Decreases with temperature d. Is zero

15. Two initially identical samples A and B of pure germanium are doped with
donors to concentrations of 1x1020 and 3x1020 respectively.If the hole
concentration in A is 9x1012, then the hole concentration in B at the same
temperature will be

A. 3x1012 m-3
B. 7x1012 m-3

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 C. 11x1012 m-3
D. 27x1012 m-3

II. ESSAY QUESTIONS

1. a) Elucidate broadly radiative and non-radiative mechanisms in semiconductors
(5M)
b).Explain the construction and working mechanism of solar cells with suitable
diagrams (5M)
2. a) What are the materials are used for fabrication of LED’s? (4M)
b).Explain the structure and mechanism of LED’s (6M)
3. a) What are the characteristics of LEDs? (5M)
b) Write a brief note on figure of merits and de-merits of LED’s? (5M)
4. a) Describe the charge carrier separation mechanism in photo detectors? (5M)
b) What are the optimist materials for fabrication photo detectors (5M)
5. a) Explain the principle and characteristics of PIN diode. (5M) .
b) Write brief note on structure and mechanism of PIN diode (5M)
6. a) Explicate the principle and characteristics of Avalanche diode. (6M)
b) Engrave the brief note on structure and mechanism of Avalanche diode. (4M)
7. a) Designate the charge carrier generation and separation mechanism in solar
cells with respect to the solar light illumination? (5M)
b) Suggest the suitable semiconductors with optimum band gap for fabrication
of solar cells (5M)
8. a) What are the characteristics of solar cells? (5M)
b) Explain the principle involved in working of solar cells? (5M)
9. a) Describe the construction and working mechanism of solar cells. (6M)
b) Broadly explain the differences between light emitting diodes and photo
detectors (4M)
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10.a) Illustrate the applications of LEDs, Solar Cell, PIN diode and photo detectors
toward society in terms of medical, research and development and information
technology? (7M)
c) Determine the wavelength of LED fabricated by the CdS material
with band gap of 2.42 eV
11.a) Describe the electrical conductivity in a metal using quantum free electronic
theory.
b) Write advantages quantum free electron theory over classical free electron
theory.
12.a)Using classical free electron model derive an expression for electrical
conductivity in metal.
b) Find relaxation time of conduction electron in metal if its resistivity is
1.54x10-8 Ω-m and it has 5.8x1028 conduction electron/m3 . Given m= 9.1 x
10-31 kg, e= 1.6 x10-19 C.
13. a) Write brief note on origin of energy bands in solids with neat sketch?
b) Explain the existence of allowed and forbidden bands in solids using E-K
diagram.
14. Distinguish between direct and indirect band gap semiconductors.
b) Define mean free path? Calculate the mean free path of electron in copper of
density 8.5 x 1028 m -3 and resistivity 1.6 x10-8 m . Given m= 9.1 x 10-31
kg, e= 1.6 x10-19 J, T=300 K, KB=1.38x10-23 JK-1 .
15. a) Classify the solids into conductor, semiconductor and insulators based on
band theory.
b) For the metal having 6.5 x 1028 conduction electron/m3.Find the relaxation
time of conduction electrons if the metal has resistivity 1.43 x 10-8 Ω m. Given
m= 9.1 x 10-31 kg, e = 1.6 x10-19 C.

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16.a) Define effective mass and derive the expression for effective mass of an
electron in periodic potential field.
b) Evaluate Fermi Function for energy KBT above Fermi level?
17. a) Write brief note on Fermi Dirac distribution?
b) What is the effect of temperature on Fermi Dirac distribution function?
18. a) What are Brillouin zone? Write the corresponding K (wave vector) values of
first and second Brilliouin zone
b) Define Fermi energy level? Find the temperature at which there is 1%
probability that a state with energy 0.5 eV is above Fermi energy?
19. a) Define the terms
i. Mean free path
ii. Relaxation time
iii. Mobility.
b) Find the mobility of electrons in copper if there are 9x1028 valence
electrons/m3 and the conductivity of copper is 6x107mho/m?

:III WORK OUT

1. Calculate the Q-point values (IC and VCE) for this circuit.

2. Determine whether the transistor is biased in cutoff, saturation or linear

region.

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3. Determine VCE and IC in the voltage-divider biased transistor circuit.
Assume DC = 100 and IE  IC

4. Determine the Q-point and find the maximum peak value of the base current
for linear operation. Assume DC = 200.

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IV CHOOSE
1. All of the following are passive elements EXCEPT
a. Resistors.
b. Capacitors.
c. Inductors.
d. Transistors.
2. The resistance of a resistor is 32 kΩ. What are the first two colors in the color
bands of the resistor?
a. Orange, Red
b. Red, Orange
c. Red, Brown
d. Yellow, Green
3. If you are to allow current to flow in one direction, which of the following
should you use?
a. inductors
b. transistors
c. diodes
d. IC’s
4. Which of the following statements is/are true?
I. Passive components operate even without power source
II. A diode is a passive component
a. I only
b. II only
c. Both I and II
d. Neither I and II
5. Which of the following gives the correct flow for electronic systems?
a. sensors – processors – actuators

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 b. actuators – sensors – processors
c. sensors – actuators – processors
d. processors – sensors –actuators
6. If you want to store electrical charges for future use, which of the following
should you use?
a. Resistor
b. Inductor
c. Capacitor
d. Diode
7. What electronic component allows current to flow in only one direction?
a. Transistor
b. Capacitor
c. Diode
d. Integrated circuit

8. In 1950’s, Joyce Kilby and Robert Noyce invented a device that puts together
many components in a single, tiny package. What do you call this device?

a. Resistor
b. Sensor
c. Integrated Circuit
d. Transistor
9. Current flows in a diode when it is ________.
a. Unbiased.
b. Reverse biased.
c. Forward biased.
d. Reverse or forward biased.

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11. Which of the following is NOT an actuator in the electronic systems of a
personal computer?
a. Printers
b. Monitors
c. Keyboards
d. Speakers
1. In an n-type silicon, which of the following statement is true:
(a) Electrons are majority carriers and trivalent atoms are the
dopants.
(b) Electrons are minority carriers and pentavalent atoms are the
dopants.
(c) Holes are minority carriers and pentavalent atoms are the
dopants.
(d) Holes are majority carriers and trivalent atoms are the
dopants.
2. Carbon, silicon and germanium have four valence electrons each. These are
characterised by valence and conduction bands separated by energy band
gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following
statements is true?
(a) (Eg)Si < (Eg)Ge < (Eg)C
(b) (Eg)C < (Eg)Ge > (Eg)Si
(c) (Eg)C > (Eg)Si > (Eg)Ge
(d) (Eg)C = (Eg)Si = (Eg)Ge
3. 14In an unbiased p-n junction, holes diffuse from the p-region to n-region
because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
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 (c) hole concentration in p-region is more as compared to n-
region. (
(d) All the above.
4. When a forward bias is applied to a p-n junction, it
(a) raises the potential barrier.
(b) reduces the majority carrier current to zero.
(c) lowers the potential barrier.
(d) none of the above.
5. For transistor action, which of the following statements are correct:
(a) Base, emitter and collector regions should have similar size
and doping concentrations.
(b) The base region must be very thin and lightly doped.
(c) The emitter junction is forward biased and collector junction
is reverse biased.
(d) Both the emitter junctions as well as the collector junction are
forward biased
6. For a transistor amplifier, the voltage gain
(a) remains constant for all frequencies.
(b) is high at high and low frequencies and constant in the middle
frequency range.
(c) is low at high and low frequencies and constant at mid
frequencies.
(d) none of the above.

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