° GEMICONDUCTORY ~ @ CCHAPTER-\4) SEMI- CoNDUCTOR CONDUCTOR @ 44 has pasltine temp: St mas nogatine temp: | 4t nas die B Corfidenr oy nuixtidy | coofidont of pes elhtent Lpestetoatyy INSULATOR 4k conducts enantins: ab deem't conduct carly CLASSIFICATION OF SEMICONDUCTORS ON THE BASIS OF THEIR. CHEMICAL COMPOSITION > @® ELEMENTAL SEMICONDUCTORS:— Siond Ge COMPOUND SEMICONDUCTORS :- > INORGANIC - CAS, Gas, HP ue UW ORGANIC Polypyrrete, PAyaniline, Polytiiophene orc VALENCE BAND:- 4¢ & the energy band, wily trlude energy Lenots O% valance clettyons - : “ ? r CONDUCTION BAND: 4t contains {row eof coli -At i te drowy band aboue Velene bond - a ° ENERGY GAPCE4)- Shwe diyy enon ov betueon the LOM 9 volun bang and Lower ul og condustion band 2 Clamifietion of condurtons, semi-coud ; oh txangy gap? et: luckons autd Treulatons on tee bacis * © conpuctors a co COLZZZZZZZZ Completely filled condurtion band - Se ve EIrETTTT TA pontially, [iiued valerie bard:<= Dsemrconpuctors eee corepesniy- aety ve I comuatety yes vO (Eo, © © INsuLATORS- ce Conapleten TEg7 sev Saeed Compleriy Yule VB On the baris ch purity, temicendurters ane D Trtrinsin Seuiccnductons ® Exttrede senicondutors ae batcally tuo types: (@) n—type Semicond wuicrs ve ob tases types - : © p-type Semiconductors - @® INTRINSIC/ PURE SEMICONDUCTORS - eee ee Ne & Snthls type, Ne=Nh (noel em = no- of hetes) & So, OUinin Cuts Concentration > Ni=ne=ny FAL Guiliortum or any Serniconquster nj?-ne-ny- ce Ey Eg < devDOPINES te puoros of deliberate addition of a detrable dmpurity, @ tom punt Muwiconfurter coas to turcare ts Condurtinity “ alled doping - EXTRINSIC OR DOPED SEMICONDUCTORS: “Lhe Semnricendiutos doped with impunity’ kus ove calied axirinsie Semiconductors @) n-type This semiconductor & obtained by doping the tedramlent- conricond uctor Stor Ge with periavalont cmpuniticn bush as As) P an Sb oly Group V of, Hee periadic Tble- When pextavalent tnepurity atone added 40 pune Senciconductor then HES OL As paxtitipate én band fovmation- 40” zeman exiva ont Addition of lauge Wo-0f As atom taxge no-of Such 0 axe oblalned aud Huey Ue tna Covel cailed as Donor cover whith & very Clase +0 conduction band- So, majority harye coriers ane ee Uedvons a4 minority charge carriers ore holes. Ge e Ge Pa Ge CD ASD Ge Ge & Ge ce conrad aoe (mer77Mp) th p—type /— nis semicondurton is obtained by hoping tho totvavatont soni SiorGe with ivivalent Unpustios duh as an Al aca tanh dhveleed énpaatiy exam (In) & adaedto pure Ssemicondurtor ( Ge), dec of Ty pastict pate dy band formation The lack of 42° anit & casted nove - + Addition of lange wo- of In atom produces lange nio-of holes tn V-B - 7 One lovel is vreatod 4ust above the VB called as aueptor level > So, majority horye cannions ant holes ang minority change nin ore clertrons - :Ge Ge - Ge Ge aT» a Z> Ge qe & Ge ce eat y m. ee (0-01-0 0S ev) ve PN JUNCTION DIODE - When P-type Semicondutor comes in n-type Semiconduutor, uo processes rappor:- Q@DIFFUSIONH Duet concentration difference, holes from prtide and o- from n-sde mone towards carck our: the Uorent Cnstlinttd U aed os diffuten urnrent - 7 potential differoue is built ad the feuution @DRIFTNG:- Duetoa Peruutiod diffenewe, mine change Gunieu mone One Uv epparite dinettion Equuibvium is eaulved ulin diffusion arent ic eaual tp drift unrent: ce Layer Louned od Ma Jomilion Oe aied depletion layer: the Potential cliffrrenee is called as barrier potential oa) #The denice Pouned & cared ar p-n quntion diode; , y Ye Donorcen . +> ClectronWORKING OF A pon JUNCTION > oO Q@ELORWARD BIASING’ P side U conneeied to tve and nside i Connected to-ve -Applicd potential diferente U tm Opposite Aivertion +0 bauer potential So chloe barrier potential (VE) - Vir Vp-V> By Dunearing- aspuied potential vy gradually derreaser, majority change Carmien mover and dicde Condurts So dicde benaves like a Cow verte deutce- QREVERSE BUSING p Puide u connected to-ve and n side & Connected to tve- Applied potential difference ct in cara dineetion Re Ceci tena Se ethertrue barnisn petenttal YZ) Vi-VptV. app chential, Vy gx burcases S i ee peter Hp qraduatly, 46° So dinde behaves Like a GIARACTERSTIES CURVE At is ob types - (>) Fomoand chanactertir- The qrephial Hepuucuatton of vartaten VOUARE Ub Lied howard charuteutus ‘O: * Et T eee bowun forward velknges Tees Leruand T Mes domly due to court - potential: Altura pertiudar forsdard vettage, femcard current ear raat thak velinge ib encun at kncevelingt /Hurecteld velinge / cut - in Veliage ) Revoue chanettourtici- Stu grapiizal Hee eation, ” Tene uvsertnt a4 stance ini TR pcmeranemael Way Breakdiun Yeung e Vv Ch bexuand current and lomwandWhen Weaterse wattage Met, Thorne alm Ko Or yenuce ann beeauce Ute dace 48 minority ye cannitr At a pantiulenr revere Meleaze, ORME GUUTt TACE teadenly, HHA VeUlage is called at breakduun veliage - | . :, °, . RECTIFIER 44 & an ctertronic denice uric comments AC 40 De PRINUPLE:- (unten clicke u fouuand bis Ub conducts, bus, ib doeenet comfurt * Thi of tuo types uten Lede ub vemernre @ware- Wave RECTIFIER = 44 comist of, dangle bone Connect: 4 to ttepdewn tromjonmuern and a Load vesiitane > duput & qimen to Sltynnslonuias Ond DO & taken prom the Load vecittance - 4 8 ~@ §l| 2 eat NS ee For tve cycle of input AC, At te, Dis -ve, diede it foroerd biased ant conducts > Unis dalf Cyt appears tn the outprt * ia ee For—ve halt uyue of iipud AC, Ait-ve, Dis sve, ditde & reMeme biased and ub down't Conduits So, thu halk cycle doen't Apy ean tn the Output - Sree Ways Wulf of AC Converts 40 DC - So-teis 4 Clled half Wave yertifien - Effideney\— 440 the nati ef output Dc pewer to input Ai Cpowen - = Pont = 40-6]. 7 Por Anput- Quetpuct @) LVLL- WAVE RECTIFIER At tensist of Medes, Dy and D> conneted too contre taped Uep down tromtouner ang Load ronitane-"Gund Heristamee UU comnerted 1 Ihe middle of the 2° Coil of AQORKING:- for the tve shally uyule of Urput AC, Ais tve, E b-ve- Qu Jouwd viaed ood Dp is muvue biated: Dg Conduits and urnent cep C02) pawes Ur tue uycle ABCEA Fon —ve hall wyde of input AC Ad-ve, Ea tve- Opis forarg biaced a D, & reves biaced «Da wondurts av uvvent paues un He uyae EDCFE- Anttiu Days fuk eye of AC Comments to DC Souk ts auled full Dawe vectifion aur YN OY) OS ower oven nen Esfidency'— ath Hu vedio of output DC powerty tnput AC poor: ne Fast > Bray: on ZENER Pope Dvaw-the symbol of xenev dicde - —pf— Drow the V-I chanackeristits: roma) Revoue Concord bios bias Nx 4 OlavHow xenon cdicde is {abNeated 2 ; Kener dinde & fabricated by beauty dopleg p and n Cuber of the juncion: Whar & Hu advorrtag € of heavily doping 2 Duc to heal doping, cleplerion Tegion foumed is very thin and the cherie | Sietd 4odne junction ik extremety high cuen for arma venerse blast Mv How xenen diede it used at Votiage regulator ? Rs, Varnequrated Voltage CMe) toad Regulated votinge Rb C¥x) a tne de uoltage f& connected toa Aenen dicde trent a series Vesisttance Re Suth Hat Xenon dinde is reuense biaced: Ty thee unput ve bwreaces, the current through Re and Kener diode alto Utmccacet -Thit Wurnans the velinge duop anos Re urittrout change in the Weurnge foibermn i tals womans consort emn though Hue Current Hoes He Kener PHOTODIODE @— Draw ts symbol -@ (Oy Hew U phetodiade fabricated ? Ais fabricated wilt a drancpanont Windar to atiai leqht tofatt cn Mee diode C Please vofex NCERTP4 no 434) (> Draw the chanacteniction curve The wagnitude of the photocurrent Aepends an thee Urtonsity of, te Cri clemt light WORKING: ; Wun the photedinde % UWuminated arith '? igi (photons), Unley OLeng ty conductor » Hee efotron-helo weaker than the eneyy gop ek the Sonu z ame generated dite to Abtaupticn of phatans There Change cannlens Confibute fo the yavarne cunnent® © why phatodiede 4 aways reverse biaced ? Tn cae of an w—type, senicanquleer » Hee majority currcen deneity() Bw Canidenatoly eye than Hee mi noxity hole Aonetty - . n> majority vassien denctty. 07, excess 27 Po minority note donity Apt excen wates generated nent On p= ptAp , where Sn=Ap, 0 77P =» So < be n Pe tua Prastionsl change cue to-he photo effects onthe mincnity cansion donineted vwuue but i oe ba Mone recas wale a Srastional change cn tne and bias cunrenl - tlence, protodiodes ane preferably uied & the severe biat Coen for Viueassciong tighct bn itLIGHT EMITTING DIODE - ey ©) Draw the circuit symbol of LED: Ww 0 es @2- Haw LEP fabricated? Me dinde & fabricated with atvamtparent coven 10 that Hho aritted Uqirt con come out: Q+ Write tne Advaniages of LED: @ dow opvradional Wetiage and Lea power @ Ford arrion avg wo Warm-up tine veaudrud © We banolwAlty of emutted light lu 400 4° +0 S00 4° @ Lany Life and vuggodsress © Pour on-oby susiteeng Capability » @: For vuible LED band gap thoutd be misimeun 4:8 ey: Whe 9 Brrouse He murinuny cneyy of photon of dee nisible Yange u 1-Bev @'— Why elomental somiconduetore & Hot used in LED? Wuunubory Of Chanye crrutens ts Very bers SOLAR CEL (Q):- Draw the civerit Cymbol of Setar col: “Side @ Dw tne chanacterstic uve of Solanctell ©) > Wrfte the viiterfa to hoore a matorfal tor Sotar wou: @ band gaplvisorpev) @ cat Dereurfeal condurtfult @ awlwbitity of yaw material © high apifeal abcoxpttan - @) + Write the 3 procenes of Setar cout - @ Genration of eh pains duc to Uykt Chvy Eq) Aete to try function Sepanation af elertynns and holes due to Cloetrfe ft ® upiotion region: ¢ feed of ttre © tne Cterbions Yahing de nside ane Collected by dt fynnt- contact 3d Aeros TeaLhing te psie’ axe collected by barks combant- Thiet »p Side beromet tve 2 n cide boromes ve giving rue to photovaitage » Tse