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Kexin-1n5817ws C489146

This document provides specifications for Schottky diodes in the 1N5817WS to 1N5819WS series. It lists the diodes' maximum ratings, features, and typical characteristics. The diodes offer low power loss, high efficiency, high current capability, and low forward voltage drop. Graphs show characteristics like average forward current derating with temperature, reverse leakage current, forward voltage drop, and junction capacitance.

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asam youssef
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42 views3 pages

Kexin-1n5817ws C489146

This document provides specifications for Schottky diodes in the 1N5817WS to 1N5819WS series. It lists the diodes' maximum ratings, features, and typical characteristics. The diodes offer low power loss, high efficiency, high current capability, and low forward voltage drop. Graphs show characteristics like average forward current derating with temperature, reverse leakage current, forward voltage drop, and junction capacitance.

Uploaded by

asam youssef
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SMD Type Diodes

Transistors

Schottky Diodes
1N5817WS ~ 1N5819WS

Ƶ Features SOD-323
ƽ Low power loss, high efficiency
ƽ High current capability
ƽ Low forward voltage drop
1 2
ƽ High Surge Capability

Top View

PIN DESCRIPTION
PIN DESCRIPTION
1 Cathode
2 Anode

Ƶ Absolute Maximum Ratings Ta = 25ć


Parameter Symbol 1N5817WS 1N5818WS 1N5819WS Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40
RMS Voltage VRMS 14 21 28
DC Blocking Voltage VDC 20 30 40 V
Forward Voltage @ IF=1A 0.45 0.55 0.6
VF
Forward Voltage @ IF=3.1A 0.75 0.875 0.9
Average Forward Rectified Current @ TL=90ć IFAV 1
A
Non-Repetitive Peak Forward Surge Current @8.3ms IFSM 25

Ta = 25ć 1
Reverse Voltage Leakage Current IR mA
Ta = 100ć 10
Typical Junction Capacitance CJ 110 pF
Junction Temperature TJ 125
ć
Storage Temperature range Tstg -55 to 125

Ƶ Marking
NO. 1N5817WS 1N5818WS 1N5819WS
Marking SJ SK SL

1
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SMD Type Diodes
Transistors

Schottky Diodes
1N5817WS ~ 1N5819WS
Ƶ Typical Characterisitics
Fig.1 Forward Current Derating Curve Fig.2 Typical Reverse Characteristics

Instaneous Reverse Current ( ȝA)


1.2 10 4
Average Forward Current (A)

1.0
10 3 T J =125°
C
0.8

0.6 10 2 T J =75°
C

0.4
T J =25°
C
10 1
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0 10 0
25 50 75 100 125 150 0 20 40 60 80 100
Ambient Temperature (°
C) Percent of Rated Peak Reverse Voltage˄˅

Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance

1.0 500
Instaneous Forward Current (A)

Junction Capacitance (pF)

200
0.5
C
5°
C
5°

100
=2
12

TJ
TJ =

50
0.2

20

0.1 10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 1 10 100

Instaneous Forward Voltage (V) Reverse Voltage (V)

Fig.5 Maximum Non-Repetitive Peak Fig.6- Typical Transient Thermal Impedance


C /W˅

Forward Surage Current


Peak Forward Surage Current (A)

30 100
Transient Thermal Impedance˄ °

8.3 ms Single Half Sine Wave


(JEDEC Method)
25

20 10

15

10 1

05

00 0.1
1 10 100 0.01 0.1 1 10 100
Number of Cycles at 50Hz t, Pulse Duration˄sec˅

2
2
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SMD Type Diodes
Transistors

Schottky Diodes
1N5817WS ~ 1N5819WS
Ƶ Package Outline Dimensions

Plastic surface mounted package; 2 leads SOD-323

Ƶ The Recommended Mounting Pad Size

Note:
1.Controlling dimension: in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only.

3
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