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Mathematical Model for Photovoltaic Cells

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 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

Mathematical Model for Photovoltaic Cells

Wafaa ABD EL-BASIT1*, Ashraf Mosleh ABD El–MAKSOOD2 and
Fouad Abd El-Moniem Saad SOLIMAN2
1
Electronics Research Laboratory, Physics Department, Faculty of Women for Arts,
Science and Education, Ain-Shams University, Heliopolis, Cairo, Egypt.
2
Nuclear Materials Authority, P. O. Box 530, Maadi-11728, Cairo, Egypt.
E-mails: [email protected] (*); [email protected];
[email protected]
*Corresponding Author: phone 002448083214; mob. 0201226045431

Abstract
The study of photovoltaic systems in an efficient manner requires a precise
knowledge of the (I-V) and (P-V) characteristic curves of photovoltaic modules. So,
the aim of the present paper is to estimate such characteristics based on different
operating conditions. In this concern, a simple one diode mathematical model was
implemented using MATLAB script. The output characteristics of PV cell depend
on the environmental conditions. For any solar cell, the model parameters are
function of the irradiance and the temperature values of the site where the panel is
placed. In this paper, the numerical values of the equivalent circuit parameters are
generated by the program. As well, the dependence of the cells electrical parameters
are analyzed under the influence of different irradiance and temperature levels. The
variation of slopes of the (I–V) curves of a cell at short-circuit and open-circuit
conditions with intensity of illumination in small span of intensity and different
temperature levels have been applied to determine the cell parameters, shunt
resistance, series resistance. The results show that the efficiency of solar cells has
an inverse relationship with temperature, irradiance levels are affected by the
change of the photo-generation current and the series resistance in the single diode
model.
Keywords
Photovoltaic cell; Output electrical characteristics; Irradiance; Temperature;
Modeling, Matlab.

13
http://ljs.academicdirect.org/
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

Introduction

Developing alternative energy resources with high efficiency and low emission has
become of great importance with increasing concerns about fossil fuel deficit, high oil prices,
global warming, and damage to environment and ecosystem [1]. In this concern, photovoltaic
solar energy is a clean, renewable, energy with a long service life and high reliability [2]. A
photovoltaic system converts sunlight into electricity, where, the basic device of a
photovoltaic system is the photovoltaic cell. Cells may be grouped to form panels or modules
[3]. The modeling and simulation of photovoltaic (PV) have made a great transition and form
an important part of power generation in this present age. The modeling of PV module
generally involves the approximation of the non-linear (I-V) curves. Many researchers used
circuit based approach to characterize the PV module of which the simplest model is the
current source in parallel to a diode [4, 5]. Finally, the main objective of present paper is to
shed further light on the modeling techniques applied for photovoltaic cells characterizations
and investigating the effects of the cells physical parameters (series - and shunt – resistances),
as well, the environmental ones (temperature - and irradiance -levels).

Material and Method

Circuits Model for Photovoltaic Cell

Ideal Photovoltaic Model
An ideal Photovoltaic cell consists of a single diode connected in parallel with a light
generated current source, Iph (Fig. 1a), where, its output current, I, can be written as:

⎡ ⎛ V ⎞ ⎤
I = I ph − I s ⎢exp ⎜⎜ ⎟⎟ − 1⎥ (1)
⎣ ⎝ nVT ⎠ ⎦
where: Is = cell saturation of dark current, VT = thermal voltage = kTc/q, k = Boltzmann's
constant, = 1.38 · 10−23 J/K, Tc = cell’s working temperature, q = electron charge (1.6 · 10−19
C), n = ideality factor equal to 1.1.

Non-Ideal Photovoltaic Models

Photovoltaic Model with Series Resistance
The photovoltaic model with series resistance (Rs-model) depicted in Fig. (1b) is
achieved with inclusion of series resistance Rs, hence, the output current can be derived as:

14
 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

⎡ ⎛ V + IRs ⎞ ⎤
I = I ph − I s ⎢exp ⎜⎜ ⎟⎟ − 1⎥ (2)
⎣ ⎝ nVT ⎠ ⎦

Photovoltaic Model with Series and Parallel Resistances

Equation (2) does not adequately represent the behaviour of the cell when subjected to
environmental variations, especially at low voltages. A more practical model can be seen in
Fig. (1c), where series Rs, and parallel resistances Rsh, are introduced [6]. Series resistance is
very small, which arises from the ohmic contact between metal and semiconductor internal
resistance. But shunt resistance is very large and represents the surface quality along the
periphery, noting that in ideal case Rs is 0 and Rsh is ∞ [7]. Applying Kirchhoff’s law to the
node where Iph, diode, Rsh and Rs meet, and one get [8-10]:
I = I ph − I d − I sh (3)
⎡ ⎛ V + IR s ⎞ ⎤ ⎡ V + IR s ⎤
I = I ph − I s ⎢ exp ⎜⎜ ⎟⎟ − 1⎥ − ⎢ ⎥ (4)
⎣ ⎝ nV T ⎠ ⎦ ⎣ R sh ⎦
where: Id = diode current, Ish = shunt current, and G = solar insolation.
This model yields more accurate results than the Rs model, but at the expense of
longer computational time. A modification of this model was proposed by several authors by
adding an extra diode. This additional diode represents the recombination effects of the
charge carriers. In general, the two diode model is more accurate but the computational time
is much longer [6]. For simplicity, the single diode model of Fig. (1c) was used throughout
the present work.

Figure 1. Circuits model for PV cell (a) Ideal, (b) with series resistance, Rs,
(c) with series and parallel resistance, Rs and Rsh.

The photocurrent mainly depends on the solar insolation and cell’s working
temperature, which is described as [11, 12]:

[
I ph = I scr + K I (T c − T ref )] GG (5)
ref

where: Isc = solar cell short-circuit current; Gref = reference solar insolation in W/m2 ; Tref =
cell’s reference temperature, KI = cell’s short-circuit current temperature coefficient, and G =

15
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

solar insolation in W/m2.

On the other hand, the cell’s saturation current varies with the cell temperature, which
is described as:

⎡ qE g ⎛ 1 1 ⎞⎟ ⎤
3
⎛ T ⎞
I s = I RS ⎜ c ⎟ exp ⎢ ⎜ − ⎥ (6)
⎜T ⎟ ⎜ T c ⎟⎠ ⎦⎥
⎝ ref ⎠ ⎣⎢ nk ⎝ T ref
where : IRS = cell’s reverse saturation current at a reference temperature and a solar radiation,
Eg = band-gap energy of the Si solar cell, = 1.10 eV, and n = is dependent on PV technology.
The reverse saturation current at reference temperature can be approximately obtained
as:
I sc
I RS =
⎛ qV ⎞ (7)
exp⎜⎜ oc ⎟⎟ − 1
⎝ nkTc ⎠
The Voc parameter is obtained by assuming the output current is zero [13].
An important characteristic of solar panels is its Fill Factor (FF). The factor which
represents how square the voltage/current characteristic of a panel is. In general, PV panels
usually have an FF somewhere between 0.4 and 0.8; ideal PV panels have a Fill Factor of 1.0.
The Fill Factor (FF) is the ratio of the maximum power point divided by Voc and Isc [14].

Pmax
FF = (8)
Voc I sc
The reduction in Fill Factor (FF) corresponding to the total series resistance is given
by:
− I sc
∆FF = ⋅ Rs ⋅ FFideal (9)
Voc
where, FFideal = ideal Fill Factor equal to 0.824 [15].
Based on mathematical equations of the photovoltaic cells, a model was written for
Matlab software package applications. A function in Matlab has been developed which
calculates the current module from data of voltage, solar radiation and temperature. From
which, the (I-V) and (P-V), as well as, maximum power point could be obtained [16]. Noting
that for the case of study, Isc = 1.9 A, Gref = 1000 W/m2, Tref =300 K, KI = 0.0017, Rs = 0.01 Ω
and Rsh = 300 Ω are assumed to be known.

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 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

Results

Illumination Effects
(I-V) - and (P-V) - Characteristic Curves

The dependence of the (I-V) and (P-V) characteristic curves of PV cells on

illumination level, plotted at temperature of 25 °C, were shown in Fig’s. (2, 3).
2
200 W/m2
400 W/m2
600 W/m2
1.5 800 W/m2
1000 W/m2
Current, A

0.5

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Voltage, V

Figure 2. (I-V) Characteristic curves of solar panel, plotted at different irradiance levels and 25°C.
1

200 W/m2
0.9
400 W/m2
0.8 600 W/m2
800 W/m2
0.7
1000 W/m2
0.6
Power, Watt

0.5

0.4

0.3

0.2

0.1

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V

Figure 3. (P-V) Characteristic curves of solar panel, plotted at different irradiance levels and
25 °C.

Dependence of the Solar Cell Electrical Parameters on Illumination Level

During operation, the efficiency of solar cells is reduced by the dissipation of power
across internal resistances. These parasitic resistances can be modeled as a parallel shunt
resistance (Rsh) and series resistance (Rs), as depicted in Fig.(1c). It is possible to approximate
the Rs and Rsh, from the slopes of the (I-V) curves at Voc and Isc, respectively. Typically, Rs
and Rsh of solar cell at Voc and at Isc have been plotted against intensity of illumination at
room temperature in Fig. (4). The dependence of the electrical parameters of the solar cells
(Isc, Voc, Pmax, and FF) on illumination level, plotted at 25°C, was shown in Fig. (5).

17
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

400

100 380

360

340
Series resistance, Ω

Shunt resistance, Ω
10 320

300

280

1 260

240

220

0.1 200
0 20 40 60 80 100 120 140 160 180 200 220 0 200 400 600 800 1000
2 2
Illumination level, W/m Illumination level, W/m
(a) (b)

Figure 4. Dependence of the parasitic resistances of solar cell on illumination levels, plotted at
25°C.
2.0 0.9

1.8 Isc
0.8
Pmax
1.6
0.7

1.4
Isc, A and Pmax, Watt

0.6
Voc, V and FF

1.2
0.5
1.0
0.4
0.8

0.3
0.6

0.2
0.4 Voc
0.1
FF
0.2

0.0 0.0
0 200 400 600 800 1000 0 200 400 600 800 1000
2
Illumination level, W/m Illumination level, W/m
2

(a) (b)

Figure 5. Dependence of the solar cell electrical parameters on illumination levels, plotted at
25 °C.

Temperature Effects
(I-V) -And (P-V) -Characteristic Curves
In general, for a given illumination level (1000 W/m2), when the cell temperature
increases, the open circuit voltage Voc, drops dramatically, while the short circuit current
increases slightly (Fig. 6). On the other hand, concerning the output power of the proposed
solar cells, the (P-V) characteristic curves were plotted at different temperature levels, ranging
from 0°C up to 100°C, keeping the solar irradiance constant level at 1000 W/m2 (Fig. 7).
The characterization of Rs and Rsh on its temperature dependence was carried out. The
dependence of Rs and Rsh on temperature, for silicon solar cells, plotted at 1000 W/cm2, was
shown in Fig. (8).
The temperature dependence of the principal cell parameters such as, Isc, Voc, Pmax and
FF were plotted in Fig. (9) for a silicon solar cell.

18
 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

2.5
o
0 C
o
25 C
2 o
50 C
o
75 C

Current, A
1.5 o
100 C

0.5

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V
Figure 6. (I-V) curves of solar cell plotted at different temperature levels and 1000 W/m2.
1
o
0.9 0 C
o
25 C
0.8
o
50 C
0.7 o
75 C
0.6 o
100 C
0.5
Power, Watt

0.4

0.3

0.2

0.1

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V
Figure 7. (P-V) curves of solar cell, plotted at different cell temperature levels and 1000
W/m2.

Dependence of Solar Cell Electrical Parameters on Temperature

350

0.038
300

0.036
250
Series resistance, Ω

Shunt resistance, Ω

0.034
200

0.032
150

0.030
100

0.028 50

0.026 0
0 20 40 60 80 100 0 20 40 60 80 100
o o
Temperature, C Temperature, C
(a) (b)

Figure 8. Temperature dependence of (a) series resistance, and (b) shunt resistance, plotted
at 1000 W/m2.

19
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

2.2 0.75 1.2 0.85

0.70 1.1
2.1
0.80
0.65
1.0

2.0 0.60
0.9
0.75

Pmax, Watt
0.55

Voc, V
Isc, A

1.9 0.8

FF
0.50
0.70
0.7
1.8 0.45

0.6
0.40
0.65
1.7
0.35 0.5

1.6 0.30 0.4 0.60

0 20 40 60 80 100 0 20 40 60 80 100
o o
Temperature, C Temperature, C
(a) (b)

Figure 9. Calculated parameters of solar cell as a function of temperature, plotted at light

intensity of 1000 W/m2.

Effects of Internal Resistances

Series Resistance
The series resistance of the PV cell is low, and in some cases, it can be neglected.
However, to render a model suitable for any given PV cell, it is possible to vary this
resistance and predict the influence of its variation on the PV cell outputs. Fig's. (10, 11) are
the plots of the (I-V) and (P-V) characteristics for various values of series resistance with
fixed values of light intensity (G = 1000 W/m2) and ambient temperature (Tc = 25 °C).
2

1.8

1.6

1.4

1.2
Current, A

1
0.005 ohm
0.8 0.055 ohm
0.105 ohm
0.6
0.155 ohm
0.4 0.205 ohm
0.255 ohm
0.2
0.305 ohm
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V

Figure 10. (I-V) characteristic curves, plotted at different series resistance values.
1
0.005 ohm
0.9 0.055 ohm
0.8 0.105 ohm
0.155 ohm
0.7
0.205 ohm
Power, Watt

0.6 0.255 ohm

0.305 ohm
0.5

0.4

0.3

0.2

0.1

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V
Figure 11. (P-V) characteristic curves, plotted at different series resistance values.

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 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

Figure 12 shows Solar cell parameters (Isc, Voc, Pmax. and FF) resulting from model
simulations as a function of series resistance, plotted at light intensity of 1000 W/m2, and
temperature of 25 °C.
2.0 1.0
Isc Pmax
1.8 Voc 0.9
FF
1.6
0.8

1.4

Pmax, Watt and FF

0.7
Isc, A and Voc, V

1.2
0.6
1.0
0.5
0.8

0.4
0.6

0.3
0.4

0.2 0.2

0.0 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.1 0.2 0.3 0.4 0.5

Series resistance, Ω Series resistance, Ω

(a) (b)
Figure 12. Solar cell parameters resulting from model simulations as a function of series
resistance, plotted at light intensity of 1000 W/m2 and temperature of 25 °C.

Shunt Resistance
The modeling was performed for two different Rsh values of 1.0 Ω and 500 Ω, as an
example (Fig's. 13, 14).
2

1.8

1.6

1.4
1 ohm
1.2 500 ohm
Current, A

0.8

0.6

0.4

0.2

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V

Figure 13. (I-V) characteristic curves plotted at different shunt resistance values.
1
1 ohm
0.9
500 ohm
0.8

0.7
Power, Watt

0.6

0.5

0.4

0.3

0.2

0.1

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Voltage, V
Figure 14. (P-V) characteristic curves plotted at different shunt resistance values.

21
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

The effect of the shunt resistance (Rsh) on the electrical performances of the cell was
shown in Fig. (15), at 1000 W/m2 and 25 °C.
1.92 0.635 1.00

0.95
1.90
0.90
0.630

1.88 0.85

Pmax, Watt and FF

0.80

Voc, V
Isc, A

1.86 0.625
0.75

1.84 0.70

0.620 P max
0.65
FF
1.82
0.60

1.80 0.615 0.55

0 100 200 300 400 500 0 100 200 300 400 500

Shunt resistance, Ω Shunt resistance, Ω

(a) (b)

Figure 15. Dependence of solar cell parameters on the shunt resistance (Rsh), plotted
at light intensity of 1000 W/m2 and ambient temperature of 25 °C.

Discussion

Generally, the output power of the PV cell was shown to be increases with the
radiation intensity. Such an increase in the output power is primarily caused by a rise in the
Voc and also by the corresponding linear increase in the photocurrent with the irradiation
intensity. On the other hand, there is a linear boost in the Isc in line with the minority carrier
concentration, due to the increase in irradiation intensity (Fig’s. 2, 3) [17].
From Fig. (4), it is clear that Rs decreases continuously with increasing the intensity of
illumination (Fig. 4a). It may be noted from the figure that Rs decreases with the increase of
intensity up to 50 W/m2 and then saturates with the further increase in intensity. The decrease
can be attributed to the increase in conductivity of the active layer of the cell with the increase
in the intensity of illumination [18].
On the other hand, for low illumination levels, up to around 400 W/m2, the shunt
resistance was shown to be increase, slightly (Fig. 4b). But, for high illumination levels, it
starts to increase rapidly. The increase of Rsh with intensity of illumination at low values may
be due to the existence of local in-homogeneities leading to non uniform current flow or to
charge leakage a cross the p–n junction in the cell. This is because generally shunt is
associated with the localized defect regions which in turn have a larger concentration of traps
that make them electrically active. These traps act as sinks for majority carriers or photo-

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 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

generated minority carriers depending on the nature of the traps. Traps capture carriers from
the neighboring regions. The electrical activity of traps is stronger at low current densities
under dark or at low illumination intensities. In a solar cell, a defect region makes a poor cell
than the defect free region and both the cells are connected in parallel. At any operational
point above the short circuit, this gives rise to a circulation current. This is equivalent to a
shunt current. As the illumination intensity increases, the traps start getting filled and this
reduces the shunt current and thus increases the shunt resistance of the cell. At a certain value
of the illumination intensity, all traps get filled and then the shunt resistance attains a
maximum value for further increase in the illumination intensity unless the high intensity of
illumination causes some other effect, e.g. the heating of the cell that may degrade the shunt
resistance [10].
For an ideal cell, Rsh would be infinite and would not provide an alternate path for
current to flow, while Rs would be zero, resulting in no further voltage drop before the load.
Decreasing Rsh and increasing Rs will decrease the Fill Factor (FF) and Pmax as shown in Fig.
(5). If Rsh is decreased too much, Voc will drop, while increasing Rs excessively can cause Isc
to drop instead. According to Schottky equation, both Isc and the Voc are dependent on the
light intensity. The current at short circuit increases linearly as the light intensity increases,
since the photon-to-current conversion rate increases. On the other hand, the open-circuit
voltage increases logarithmically, following the distribution of the energy states in the
semiconductor. The maximum power point, Pmax, also, increases linearly with the light
intensity (Fig.5). Finally, Fig. (5b) shows FF as a function of illumination intensity, from
which, it is clear that FF is always less than one due to internal resistance within the cell, as
well as, external shunt resistance in the circuit.
Additionally, the efficiency of the solar cells falls when temperature increases, mainly,
due to the decrease of the open circuit voltage (Fig. 6) [19].It is clearly shown that the output
power is a direct function of the cell temperature, the matter is mainly due to as temperature
increases, the band gap of the intrinsic semiconductor shrinks, and the open circuit voltage
(Voc) decreases following the p-n junction voltage temperature dependency of seen in the
diode factor q/kT. Solar cells therefore have a negative temperature coefficient of Voc.
Moreover, a lower output power results given the same photocurrent because the charge
carriers are liberated at a lower potential. Using the convention introduced with the Fill Factor
calculation, a reduction in Voc results in a smaller theoretical maximum power Pmax = I sc ×Voc

23
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

given the same short-circuit current Isc [20].

It is obvious from the Fig. (8a) that Rs increases with temperature, where, the increase
being sharper for the low-temperatures region than for the high-temperature region [18].
Finally, considering the Rsh, it is clear that, for maximum efficiency of a solar cell, the highest
shunt resistance is needed (Fig. 8b). Finally, it is proved that the shunt resistance value
decreases pronouncedly as a function of temperature [21].
With increase in temperature, the rate of photon generation increases, thus reverse
saturation current increases rapidly (Eq. 4) and this result on reduction in band gap. Hence,
this leads to marginal changes in current but major changes in voltage (Fig. 9a) at fixed values
of light-intensity [22]. As temperature increases, again the band gap of the intrinsic
semiconductor shrinks meaning more incident energy is absorbed because a greater
percentage of the incident light has enough energy to raise charge carriers from the valence
band to the conduction band. A larger photocurrent results; therefore, Isc increases for a given
insolation, and solar cells have a positive temperature coefficient of Isc [20], the short circuit
current increased by 2.46 mA°C-1 at 1000 W/m2.
Figure (9a) shows the open-circuit voltage dependence on temperature, plotted under
constant illumination intensity (1000 W/m2). The Voc will rapidly decline due to the
exponential dependence of the saturation current Is on the temperature [17]. Moreover, an
approximately linear relationship like Voc ∝-T is encountered in the temperature range [23].
At T=100 °C and the highest illumination intensity used, 1000 W/m2, the Voc is 0.337 V.
Upon cooling the sample to T= 0°C, the Voc increases to 0.723 V. The temperature coefficient
obtained for the simulation of Voc results dVoc/dT≈ - 4.0 mV°C-1. On the other hand, it is clear
from Fig. (9b) that cell temperature significantly decreases the power output of the solar
panel. Finally, the Fill Factor was shown to be decreased with increasing temperature, as
shown in Fig. (9b). Where, an initial FF value of 0.78, measured at room temperature level
(25°C), was shown to decrease down to 0.64, measured at T=100°C. On the other hand, its
value was shown increase up to 0.82, measured at 0°C.
As seen in Fig's. (10, 11), the presence of series resistance limits the current output
and causes a drop in voltage at a specific current which lowers the Fill Factor of the curve.
Increasing the series resistance results in the I-V characteristic becoming flattened at the
“knee” and at high series resistances the curve resembles the ohmic behavior of a resistor
[24].

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 Leonardo Journal of Sciences Issue 23, July-December 2013
ISSN 1583-0233 p. 13-28

The series resistance is caused by the movement of electrons through the emitter and base
of the solar cell, the contact resistance between the metal contact and the silicon and the
resistance of metal grids at the front and the rear of the solar cell. The shunt resistance is due
to manufacturing defects and also lightly by poor solar cell design. It corresponds to an
alternate current path for the photocurrent. Series resistance Rs has been recognized as one of
the key parameters affecting the performance of photovoltaic devices through reduction of the
solar cell Fill Factor (Eq. 9). For solar cell, keeping the series resistance (Rs) as low as
possible is of paramount importance because its increase causes power loss due mainly to a
decrease of short-circuit current, maximum power and Fill Factor of the solar cell [25] as
shown in Fig. (12). On the other hand, the value of the open-circuit voltage was shown to be
independent of Rs, at constant light intensity=1000 W/m2 and ambient temperature=25 °C
(Fig. 12a).
Contrarily to the series resistance, the shunt resistance (Rsh) must be higher to avoid
current loss at the junction diminishing the photocurrent and hence the solar cell performance
[23]. It is well known that the shunt resistance of any PV cell should be large enough for
higher output power and Fill Factor. It is observed that the smallest value of Rsh causes PV
cell current to fall more steeply indicating higher power loss and low Fill Factor [26].
The analysis of Figure (15), it is clear that for sufficiently small Rsh values, the power
losses in solar cells are mainly due to that an alternate current path for the light-generated
current. Such a diversion reduces the amount of current flowing through the solar cell
junction and reduces the voltage from the solar cell. In addition, at lower voltages where the
effective resistance of the solar cell is high, the impact of a resistance in parallel is large. At
large values of Rsh up to 50 Ω the values of Isc, Voc, Pmax and FF are constant with increasing
Rsh.

Conclusions

Since the field tests can be expensive and depend primarily on weather conditions it is
very convenient to have simulation models to enable work at any time. For this reason the
present paper investigates a simple one-diode mathematical model, which was implemented
applying MATLAB script. The model can be considered as an easy, simple, and fast tool for
characterization of different types of solar cells, as well as, determines the environmental
conditions effect on the operation of the proposed system. We can conclude that the changes

25
 Mathematical Model for Photovoltaic Cells
Wafaa ABD EL-BASIT, Ashraf M. ABD El–MAKSOOD and Fouad A. E.-M. S. SOLIMAN

in irradiation mainly affect the output current, while the changes in temperature mainly
influence the output voltage.

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