BFF1303: ELECTRICAL /

ELECTRONICS ENGINEERING

Analog Electronics:
Bipolar Junction Transistors
Ismail Mohd Khairuddin , Zulkifil Md Yusof
Faculty of Manufacturing Engineering
Universiti Malaysia Pahang
 Bipolar Junction
Transistor
BFF1303 ELECTRICAL/ELECTRONICS ENGINEERING

Contents:
 Outcomes
 Introduction
 Transistor Construction
 Transistor Operation
 Common-Base Configuration
 Common-Emitter Configuration
 Common-Collector Configuration
Faculty of Manufacturing  Limits Of Operation
Universiti Malaysia Pahang  Transistor Specification Sheet
Kampus Pekan, Pahang Darul Makmur
Tel: +609-424 5800
Fax: +609-4245888

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Understand the physical Select the operating
operation of bipolar point of a bipolar
transistor transistor circuit

Compute performance of Select an amplifier

several important configuration appropriate
amplifier configurations. for a given application.

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Bardeen, Brattain and Shockley

Discovery of the transistor in 1947

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There are two types of transistors:
pnp
npn pnp

The terminals are labeled:

E - Emitter
B - Base
C - Collector

npn

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With the external sources, VEE and VCC, connected as shown:
The emitter-base junction is forward biased
The base-collector junction is reverse biased

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 Currents in a Transistor

Emitter current is the sum of the collector and base currents:

I E  IC  I B

The collector current is comprised of two currents:

I C  I Cmajority  I COminority

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The base is common to both input (emitter–base) and output
(collector–base) of the transistor.

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 Common-Base Amplifier
Input Characteristics

This curve shows the relationship between of input current (IE)

to input voltage (VBE) for three output voltage (VCB) levels.

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 Common-Base Amplifier
Output Characteristics

This graph demonstrates the output current (IC) to an output

voltage (VCB) for various levels of input current (IE).

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 Operating Regions

Active – Operating range of the amplifier.

Cutoff – The amplifier is basically off. There is voltage, but little
current.
Saturation – The amplifier is full on. There is current, but little
voltage.
Approximations
Emitter and collector currents:
IC  I E
Base-emitter voltage:

VBE  0.7 V (for Silicon)

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 Alpha (α)
Ratio of IC to IE :
IC
αdc 
IE
Ideally: α = 1

In reality: a is between 0.9 and 0.998

Alpha () in the AC mode:

ΔI C
αac 
ΔI E

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The emitter is common to both input
(base-emitter) and output (collector-
emitter).

The input is on the base and the output

is on the collector.

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 Common-Emitter Characteristics

Collector Characteristics Base Characteristics

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 Common-Emitter Amplifier Currents

Ideal Currents

IE = IC + IB IC =  IE

Actual Currents

IC =  IE + ICBO where ICBO = minority collector current

ICBO is usually so small that it can be ignored, except in high power
transistors and in high temperature environments.

When IB = 0 A the transistor is in cutoff, but there is some minority

current flowing called ICEO.
I CBO
I CE 0 
1  α I B 0 μA
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 Beta (β)

 represents the amplification factor of a transistor. ( is

sometimes referred to as hfe, a term used in transistor modeling
calculations)

In DC mode:
IC
βdc 
IB
In AC mode:

I C
 ac 
I B VCE  constant

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 Beta (β)

Determining  from a Graph

(3.2 mA  2.2 mA)
 AC 
(30 μA  20 μA)
1 mA

10 μA VCE 7.5
 100

2.7 mA
 DC 
25 μA VCE 7.5

 108
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 Beta (β)

Relationship between amplification factors  and 

 
 
 1  1
Relationship Between Currents

IC   I B I E  (   1) I B

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The input is on the base and the output is on the emitter.

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The input is on the base and the output is on the emitter.

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The characteristics are similar to those of the common-emitter
configuration, except the vertical axis is IE.

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VCE is at maximum and IC is at
minimum (ICmax= ICEO) in the
cutoff region.

IC is at maximum and VCE is at

minimum (VCE max = VCEsat =
VCEO) in the saturation region.

The transistor operates in the

active region between
saturation and cutoff.

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 Power Dissipation

Common-base:

PC max  VCB I C
Common-emitter:

PC max  VCE I C

Common-collector:

PC max  VCE I E

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