SPINTRONICS A NEW VENTURE IN COMPUTER MEMORIES BY V.JANSI S.

ARCHANA DEVI

E-MAIL ID:siarchana_p@yaho o.co.in

[email protected]

ABSTRACT: The computer memory types in major usage are ROM and RAM. RAM is a volatile memory, which can store information only when power is ON. Hence during booting and shutdown process, transfer of data from RAM to Hard drive and vice versa takes place. This increases the time required to turn on/off the personnel computer. MRAM is a developing technology having the advantage of being a non-volatile form of memory that has rewritability rates challenging conventional volatile RAM. SPINTRONICS is the basic principle behind the construction of MRAM cells.GMR (Giant Magneto Resistance) materials has been identified to be exhibiting the great range of SPINTRONICS effect. It is a method of storing data bits using magnetic charges instead of the electrical charges used by DRAM. So, MRAM requires less memory refreshes, leading to

better power consumption. Eventually the usage MRAM as a replacement for other types of non-volatile (flash) memory increases the speed. This would allow the entire state of a computer software to be stored after the computer has been turned off. Upon the turning on of ones computer, all of the software configuration would already be of present. MRAM Conceptually, would the utilization virtually

eliminate boot-up time. INTRODUCTION: Computers today play an

indispensable role in humans life. One of the most critical parts of the computer system is the booting process. BIOS contain all the programming that mother board requires in order to boot your computer. BIOS is the first jump instruction that computer receives when it turns on. It initializes hard drive and then loads data

from hard drive to computer memory (RAM, Flash, SRAM, DRAM) because most of the memories are volatile. This involves the transfer of data and hence the booting process is delayed. We here propose the usage of MRAM cells (based on spintronics) to overcome these problems of booting. CONVENTIONAL BOOTING PROCESS: The Fast access memory today available is RAM-Random Access Memory, which are volatile in nature. Hence these data need to be transferred to the hard disk drive from memory to avoid erasing of data during the shutdown process. When we turn on the power to a computer, the first program that runs is usually a set of instructions kept in the computers read only memory (ROM). This code examines the system hardware to make sure everything is functioning properly. This power-on self test (POST) checks the CPU, memory, and basic input-output systems (BIOS) for errors and stores the result in a special memory location. Once the POST has successfully completed, the software loaded in ROM (sometimes called the BIOS firmware) will begin to activate the computers disk drives.

In most modern computers, when the computer activates the hard disk drive, it finds the first piece of the operating system: the bootstrap loader. The bootstrap loader is a small program that has a single function: it loads the operating system into memory and allows it to begin operation. In most basic form, the bootstrap loader sets up the small driver programs that interface with and control the various hardware subsystems of the computer. It sets up the divisions of memory that hold the operating system, user information and applications. It establishes the data structures that will hold the myriad signals, flags and semaphores that are used to communicate within and between the subsystems and applications of the computer. Then it turns control of the computer over to the operating system. This requires a lot of time and hence delaying the shutting down and booting up process. OUR PROPOSAL: Unlike current versions of computer memory found in everything from PCS to handheld computers, we propose to use MRAM in computer memory. It uses magnetic charges rather than electrical charges to store data. Another interesting

feature of magnetic RAM technology would be that of replacing Flash memory as well because it retains information when power is turned off. The advantages of MRAM over DRAM are that the former requires far less memory refreshes than DRAM leading to better power consumption. It is also speedcompetitive with SRAM (the CPU CACHE memory). So MRAM can amount to more storage in mobile devices, with longer battery life. In addition, MRAM retains data after a power supply is turned off. Replacing DRAM with MRAM could prevent data loss and also mean computer that start instantly, without waiting for software to boot up. Once MRAM- empowered systems arrive in force, shutting down the computer between work sessions will be a much more attractive option. SPINTRONICS: Spintronics(Spinbased electronics) also known as magneto electronics is an emergent technology which exploits the quantum spin states of electrons as well as making use of this charge state. Spintronics is the ability to charge or influence the quantum spin state of an electron. Spin is a quantum mechanical

property that arises when the rotational momentum of an electron, creates a tiny magnetic field. For the sake of simplicity, spin is given a direction, either UP or DOWN. Just as the positive or negative values of an electrical charge can be used to encode data as the OS and IS of the binary system, so too can the UP and DOWN values of spin. Unlike charge based data storage, however, spin-based storage does not disappear when the electrical current stops. Since it is the random motion of electrons moving through a semiconductor that generates a spin current (just as it generates current electrical charge).Scientists had assumed that both currents move at the same rate of speed. Collisions between individual electrons were not supposed to affect this rate.

Pictorial representation SPINTRONICS DEVICE:

In order to make a Spintronic device, the primary requirement is to have a system that can generate a current of spin polarized electrons, and a system that is sensitive to the spin polarization of the electrons. Most devices also have a unit in between that charges the current of electrons dependency on the spin states. The simplest method of generating a spin polarized current is to inject the current through a ferromagnetic material. The most common application of this effect is a Giant Magneto Resistance (GMR) device. Two beams of laser light on the surface of a semiconductor create alternating valence and conduction bands, which can be used to measure the rate at which the current of charge is flowing. In the variation used by Orenstein and his colleagues, the two pump laser beam are polarized at a 90-degree angle to one another. This creates alternating bands of spin up and spin down electrons that can be used to measure spin current. We get a diffusion of spin because we create a situation in which there will be more spin-up electrons in one place and fever in another. To speed up the data acquisition process, a technique called heterodyne detection (also called two-

dimensional electronic spectroscopy) can be used, to follow the flow of excitation energy during the process of photosynthesis. Adapting the technique to transient spin grating enables to significantly increase the data acquisition rate. A two-dimensional electron gas residing in gallium arsenide quantum wells, multistructured nanolayers of semiconductors and transition metal oxides, such as the manganites, can be used for the development of MRAM. As for what their findings on spin currents hold for the future of spintronics, Spin coulomb drag definitely makes it harder to flow a pure spin current, but if you have a technology that calls for separate packets will have a longer shelf life. The impact of spin coulomb drag depends on what kind of spin. GMR (Giant Magneto Resistance): In general the electrical resistance of very thin layer of Ferro magnetic materials significantly altered when they were subjected to a magnetic field. Specifically, changes in resistance of roughly 50% are characterized as the giant magneto resistance effect or GMR effect. The idea of this effect is demonstrated in figure 1.If a current is passed through a single layer of

ferromagnetic material that has a particular magnetic orientation or magnetization electrons of only one spin state will be allowed to pass because only 2 different spin states exist, this has a non negligible effect on the resistance of the material. To demonstrate GMR, two layers of Ferro magnetic material l(typically made of Ni, Fe, Co) are placed on top of one another. The top layers magnetization is fixed. The bottom layer can then be allowed two different magnetic orientations: parallel or anti parallel with respect to the top layer. If a current is driven through these two layers, the resistance of the stack will change significantly depending on the alignment of the bottom layer. If the bottom layers magnetization is aligned in parallel with the top layer, the stack will exhibit a moderately low resistance. This is because electrons of one spin state are still allowed to pass. However if the bottom layer is oriented anti parallel with respect to the top layer, a dramatic increase in resistance results. This is because electrons of both spin states are not allowed to pass. The above said concepts form the basis of the technology present in the modern hard disk. The researchers and engineers developed at IBM of laboratories Ferro soon layers magnetic

materials sputtering

exhibiting techniques

GMR and

through

subsequently

developed thin-filmed GMR sensors. The GMR sensor is composed of four layers. A thin insulating layer is placed in between two Ferro magnetic layers. This layer acts to minimize the magnetic coupling between the two ferromagnetic layers. This effectively allows either layer to have a magnetization which is independent of the other. An anti ferromagnetic layer is then placed adjacent to one of the Ferro magnetic layers so as to pin this layers magnetization.

a - Parallel alignment of ferromagnetic layers resulting in low resistance. b anti parallel alignment of ferromagnetic layers resulting in increasing resistance.

unveiled, improves on and combines the advantage of two types of conventional memory. The various types of computer memory can be classified in several different ways, the simplest of which is the division Concept of GMR read head sensor. The four other magnetic layers are not fixed in magnetization and is therefore designated as the free layer. Now, when this unit is passed over a bit, the free layer takes on the magnetic orientation of the bit .Depending on the state of the bit, the free layer will line up in parallel or anti-parallel with respect to the pinned layer. Because there is such a large difference in resistance between the two configurations, the state of the bit can be detected by measuring this resistance. The utilization of the GMR effect allows for enhanced sensitivity in the reading of data bits. This results in an ability to increase data densities on hard disks. MRAM: The continual release in recent years of new types of computer memory (RAM, ROM, DRAM, Flash, SRAM, PRAM) the memory chip industry has become an ever more bewildering world. Freescales MRAM, one of the latest to be commercially into volatile and non-volatile memory. The volatile memory requires constant power to maintain stored information. Most types of RAM (random access memory), the most common type of memory used by modern computers, are volatile. Thus, to store information conventional RAM computer chips are dependent upon electricity flowing through them. When the power is switched off, unless the information has been copied to the hard drive, the information is lost. Non-volatile memory, on the other hand, can retain stored information permanently, absolving the need for a constant power supply. ROM (Read Only Memory), which stores information that does not require frequent changing (i.e., does not need rewriting), such as Firmware (a software embedded inside a hardware such as a BIOS [Basic Input Output System]) is typically non-volatile. So, even

the system is off the information is stored.

in columns and rows, the intersections of which are known as addresses in which information is stored. Reading and writing information accordingly. MRAM works in a different way, more like read or write head of hard drive. But unlike a hard drive, which includes mechanical parts, MRAM is a solid state device and, as such, has much greater speed and durability. Like conventional RAM, MRAM is composed of transistors but instead of electric charges, it uses magnetic charges to store information. An MRAM chip is made up of millions of pairs of tiny ferromagnetic plates called memory cells, i.e. magnetic sandwiches consisting of two magnetic layers separated by a very thin insulating layer. Each magnetic layer has a polarity-a north pole and a south pole. These can be oriented in a parallel orientation, meaning that both have their respective poles in the same orientation, or in a parallel fashion, meaning that their poles/magnetic moments orientations are orientated to in the opposite binary directions. These relative magnetic pole correspond memory states, either 0 or 1. occurs by measuring or changing the charge at a specific address,

MRAM chip with GMR effect Modern types of ROM such as flash used in thumb devices and many MP3 players are also non-volatile, but easily rewritable, making them more like RAM. This combination of qualities has made flash memory highly popular in recent years and it is currently used to improve other types of storage such as hard drives or even replace them altogether. But although Flash is cheap and non-volatile and more write speed than RAM, it still suffers from a relatively limited lifetime. Conventional RAM memory is made of transistors and capacitors that are paired to create a memory cell, which represents one bit of data (0 0r 1). Memory cells are aligned

over

and

beneath

the

memory

cells,respectively.The bit lines and the digit lines run perpendicular to one another and at their intersections lie the magnetic memory cells, each defined by one particular bit line and one particular digit line. To write to a particular memory cell (bit), current is passed through the two wires that intersect at that memory cell. The magnetic field that is generated from current passing through a wire can change the orientation of the magnetic moments of the particular memory cell. CONCLUSION: An MRAM chip reads information by measuring the electrical resistance of a specific cell that, in turn, depends upon the alignment of the magnetic moments of the layers of the cell. To read a bit of information, a current is passed through the memory cell. If the magnetic moments are in parallel orientation, then the detected resistance would be smaller than if they were in an anti-parallel orientation. Write is achieved by the alignment of the magnetic moments of the two memory layers into one or the other relative orientation. current is passed through two sets of parallel wires or write lines(called a bit line and a digit or word line),which pass This inexpensive innovation also may produce better, less expensive catalysts for chemical reactions, better ceramic/metal seals, and lead to improved nanodevices. It also requires no refresh at any time. Not only that it mean it retains its memory with the power turned off, but also that there is no constant power draw. Hence MRAM promises a day when computers would boot up instantly once turned on, rather than comparatively slowly while retrieving information from the hard drive. REFERENCES

1. www.freescale.com 2. www.mram-info.com 3. www.ibm.com 4. K. J. Hass, G. W. Donohoe, Y.-K. Hong SEU-Resistant Magnetic Flip Flops