MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.

0mΩ
MDF1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ

General Description Features

The MDF1752 uses advanced Magnachip’s trench  VDS = 40V
MOSFET Technology to provide high performance in on-  ID = 50A @VGS = 10V
state resistance, switching performance and reliability  RDS(ON)
< 8.0mΩ @ VGS = 10V
Low RDS(ON), low gate charge can be offering superior < 10.5mΩ @ VGS = 4.5V
benefit in the application.

Applications
 Inverters
 General purpose applications

G DS
S

Absolute Maximum Ratings (TC =25oC unless otherwise noted)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS ±20 V
TC=25oC (a) 50
Continuous Drain Current (Note 1) TC=100oC 31.8
ID A
TA=25oC (b) 12.6
TA=100oC 8.0
Pulsed Drain Current IDM 100 A
TC=25oC 32
Power Dissipation for Single Operation TC=100oC 12.8
PD W
TA=25oC 2
TA=100oC 0.8
Single Pulse Avalanche Energy (Note 2) EAS 153 mJ
oC
Junction and Storage Temperature Range TJ, Tstg -55~+150

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient RθJA 62.5 oC/W
Thermal Resistance, Junction-to-Case RθJC 3.9

Jan. 2021. Version 2.2 1 Magnachip Semiconductor Ltd.

 MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDF1752TH -55~150oC TO-220F Tube Halogen Free

Electrical Characteristics (TJ =25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 40 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.7 3.0
Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1
VGS = 10V, ID = 14A - 6.1 8.0
Drain-Source ON Resistance RDS(ON) mΩ
VGS = 4.5V, ID = 11A - 8.2 10.5
Forward Transconductance gFS VDS = 5V, ID = 14A - 58 - S
Dynamic Characteristics
Total Gate Charge Qg - 26.4 -
Gate-Source Charge Qgs VDS = 20V, ID = 14A, VGS = 10V - 3.6 - nC
Gate-Drain Charge Qgd - 6.8 -
Input Capacitance Ciss - 1480 -
Reverse Transfer Capacitance Crss VDS = 20V, VGS = 0V, f = 1.0MHz - 113 - pF
Output Capacitance Coss - 243 -
Turn-On Delay Time td(on) - 9 -
Turn-On Rise Time tr VGS = 10V ,VDS = 20V, ID = 1A , - 21 -
ns
Trun-Off Delay Time td(off) RGEN = 6Ω - 31 -
Trun-Off Fall Time tf - 18 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 14A, VGS = 0V - 0.8 1.2 V
Body Diode Reverse Recovery Time trr - 26 - ns
IF = 14A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 11 - nC

Note :
1. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA
2. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V

Jan. 2021. Version 2.2 2 Magnachip Semiconductor Ltd.

 MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
100 3.0
4.0V
4.5V 2.8 VGS = 3V
VGS = 10V
2.6
80

Drain-Source On-Resistance
5.0V 2.4 3.5V
ID, Drain Current [A]

6.0V
2.2
60

Normalized
2.0 4.0V
3.5V
1.8

40 1.6
5.0V 6.0V
1.4
4.5V
1.2
20
10V
3.0V 1.0

0.8
0
0.0 0.5 1.0 1.5 2.0 2.5 0.6
0 20 40 60 80 100
VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.6 20.0

※ Notes :
1. VGS = 10 V
17.5
2. ID = 14 A
Drain-Source On-Resistance
Drain-Source On-Resistance

1.4
RDS(ON), (Normalized)

15.0
RDS(ON) [mΩ ],

1.2
TA = 125℃
12.5

1.0
10.0

TA = 25℃
0.8
7.5

0.6 5.0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

3
100 10
※ Notes :
※ Notes :
VGS = 0V
VDS = 5V 2
10
IDR, Reverse Drain Current [A]

80
ID, Drain Current [A]

1
10

60 0
10
TA=125℃
-1
10
40
25℃ TA=125℃
25℃
-55℃ 10
-2
-55℃
20
-3
10

-4
10
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.2 0.4 0.6 0.8 1.0 1.2

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jan. 2021. Version 2.2 3 Magnachip Semiconductor Ltd.

 MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
10 2.0n
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 14A Coss = Cds + Cgd
Crss = Cgd
8 1.6n
Ciss
VGS, Gate-Source Voltage [V]

10V

Capacitance [F]
6 VDS = 20V 1.2n
30V

4 800.0p ※ Notes ;
1. VGS = 0 V
2. f = 1 MHz

2 400.0p Coss
Crss

0 0.0
0 10 20 30 40 0 10 20 30 40
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

10
3 100
Operation in This Area
is Limited by R DS(on)
I(AS), AVALANCHE CURRENT (A)

TJ=25℃
10
2
100 s
ID, Drain Current [A]

1 ms
10 ms
100 ms
10
1 1s 10
DC

0
10
Single Pulse
RthJC=3.9℃ /W
TC=25℃

-1
10 1
10
-1
10
0
10
1
10
2 0.1 1 10

VDS, Drain-Source Voltage [V] tAV, TIME IN AVALANCHE (ms)

Fig.9 Maximum Safe Operating Area Fig.10 Unclamped Inductive Switching

Capability

70 0
10

60 D=0.5
Zθ JC(t), Thermal Response

50
ID, Drain Current [A]

0.2

40 0.1 ※ Notes :
-1 Duty Factor, D=t1/t2
10
0.05 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
30 RΘ JC=3.9℃ /W

0.02
20
single pulse

10 0.01

-2
0 10
25 50 75 100 125 150 10
-4
10
-3
10
-2
10
-1 0
10 10
1
10
2
10
3

TC, Case Temperature [℃ ] t1, Rectangular Pulse Duration [sec]

Fig.11 Maximum Drain Current vs. Case Fig.12 Transient Thermal Response
Temperature Curve

Jan. 2021. Version 2.2 4 Magnachip Semiconductor Ltd.

 MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Physical Dimensions

Dimensions are in millimeters unless otherwise specified

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

Jan. 2021. Version 2.2 5 Magnachip Semiconductor Ltd.

 MDF1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Worldwide Sales Support Locations
U.S.A Taiwan R.O.C
Sunnyvale Office 2F, No.61, Chowize Street, Nei Hu
787 N. Mary Ave. Sunnyvale Taipei,114 Taiwan R.O.C
CA 94085 U.S.A Tel : 886-2-2657-7898
Tel : 1-408-636-5200 Fax : 886-2-2657-8751
Fax : 1-408-213-2450 E-Mail : [email protected]
E-Mail : [email protected]
China
Chicago Office Hong Kong Office
2300 Barrington Road, Suite 330 Office 03, 42/F, Office Tower Convention Plaza
Hoffman Estates, IL 60195 U.S.A 1 Harbour Road, Wanchai, Hong Kong
Tel : 1-847-882-0951 Tel : 852-2828-9700
Fax :1-847-882-0998 Fax : 852-2802-8183
E-Mail : [email protected]
U.K
Knyvett House The Causeway, Shenzhen Office
Staines Middx, TW18 3BA,U.K. Room 1803, 18/F
Tel : +44 (0) 1784-898-8000 International Chamber of Commerce Tower
Fax : +44 (0) 1784-895-115 Fuhua 3Road, Futian District
E-Mail : [email protected] ShenZhen, China
Tel : 86-755-8831-5561
Japan Fax : 86-755-8831-5565
Tokyo Office
Shinbashi 2-chome MT bldg Shanghai Office
4F 2-5-5 Shinbashi, Minato-ku Ste 1902, 1 Huaihai Rd. (C) 20021
Tokyo, 105-0004 Japan Shanghai, China
Tel : 81-3-3595-0632 Tel : 86-21-6373-5181
Fax : 81-3-3595-0671 Fax : 86-21-6373-6640
E-Mail : [email protected]
Korea
Osaka Office 891, Daechi-Dong, Kangnam-Gu
3F, Shin-Osaka MT-2 Bldg Seoul, 135-738 Korea
3-5-36 Miyahara Yodogawa-Ku Tel : 82-2-6903-3451
Osaka, 532-0003 Japan Fax : 82-2-6903-3668 ~9
Tel : 81-6-6394-8224 Email : [email protected]
Fax : 81-6-6394-8282
E-Mail : [email protected]

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
Semiconductor Ltd.

Jan. 2021. Version 2.2 6 Magnachip Semiconductor Ltd.