Scribd
Upload
18 views

Question Paper - SPD

The document contains a practice exam for a semiconductor physics and devices course. It has two parts - part A contains 4 short answer questions and part B contains two long answer questions worth 16 marks each. The questions cover topics like crystal structure, band structure, effective mass, density of states, carrier concentration, and resistivity.

Uploaded by

Sridarshini Vikkram
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
18 views

Question Paper - SPD

The document contains a practice exam for a semiconductor physics and devices course. It has two parts - part A contains 4 short answer questions and part B contains two long answer questions worth 16 marks each. The questions cover topics like crystal structure, band structure, effective mass, density of states, carrier concentration, and resistivity.

Uploaded by

Sridarshini Vikkram
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

Roll No.

ANNA UNIVERSITY (UNIVERSITY DEPARTMENTS)


B.E. (Full Time) –Assessment 1, MAY 2021

ELECTRONICS AND COMMUNICATION ENGINEERING


Second Semester
PH 5202 Semiconductor Physics And Devices

(Regulation 2019)

Time: 90 Minutes Answer ALL Questions Max. Marks : 40

CO 1 Ability to understand concepts of electronic states and band structure formulation

CO 2 Ability to explain the carrier concentration and doping in semiconductor

BL – Bloom’s Taxonomy Levels


(L1- Remembering, L2-Understanding, L3-Applying, L4- Analysing, L5-Evaluating, L6-Creating)

PART- A (4x2=8 Marks)

Q.No Questions Marks CO BL

1 Bismuth has a=b=c=4.74 AU and angles α=β=λ=60°. What is the 2 1 L4


crystal structure?
2 Will the effective mass of an electron be negative? Justify your 2 1 L2
answer
3 Draw the Fermi distribution curve at 0K and at any temperature T K 2 2 L2

4 Distinguish between valance band and conduction band 2 2 L2

PART- B (2x 16=32 Marks)

Q.No Questions Marks CO BL

5.(a) ((i) Define Reciprocal lattice and hence deduce the reciprocal lattice for SC, 12 1 L2
BCC and FCC with a neat diagram.

(ii) Construct the first two Brillouin zones for an electron in the field of two 4 1 `L1
dimensional square lattice.
OR

5 (b) (i) Define effective mass of an electron, hence deduce an expression for the 12 1 L2
effective mass, and Draw the E-K curve. Explain the concept of hole.

(ii) Explain the behaviour of an electron moving in a field of periodic 4 1 L1


potential using Kronig and Penny model.
6 (a) (i) Derive an expression for the Density of states and based on that 12 2 L1
calculate the carrier concentration in metals

(ii) If the energy level is lying 0.01 eV above Fermi level in a solid, what is 4 2 L5
the probability of this level being occupied by an electron at 270 K ?
OR

6 (b) (i) Get an expression for the carrier concentration of an intrinsic 12 2 L2


semiconductor and explain the variation of its Fermi energy level with
temperature
(ii) The electron mobility and hole mobility in silicon are 0.135 m2/Vs and 4 2 L5
0.048 m2/Vs respectively at room temperature. If the carrier
concentration is 1.5 X1016 m-3, calculate the resistivity of silicon at room
temperature.

************* ALL THE BEST ********

You might also like