BSS138LT1

Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in http://onsemi.com
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
200 mA, 50 V
Features RDS(on) = 3.5 W
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications N−Channel
3
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Packages are Available

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit 2

Drain−to−Source Voltage VDSS 50 Vdc

Gate−to−Source Voltage − Continuous VGS ± 20 Vdc
3 MARKING
DIAGRAM
Drain Current mA
ID 200 1
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms) IDM 800 2
J1 M G
Total Power Dissipation @ TA = 25°C PD 225 mW SOT−23 G
Operating and Storage Temperature TJ, Tstg − 55 to 150 °C CASE 318 1
Range STYLE 21

Thermal Resistance, RqJA 556 °C/W

Junction−to−Ambient J1 = Device Code
M = Date Code*
Maximum Lead Temperature for TL 260 °C G = Pb−Free Package
Soldering Purposes, for 10 seconds (Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum *Date Code orientation and/or overbar may
Ratings are stress ratings only. Functional operation above the Recommended vary depending upon manufacturing location.
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device Package Shipping†

BSS138LT1 SOT−23 3000 Tape & Reel
BSS138LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
BSS138LT3 SOT−23 10,000 Tape & Reel
BSS138LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

September, 2011 − Rev. 6 BSS138LT1/D
 BSS138LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS 50 − − Vdc
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current IDSS mAdc
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C) − − 0.1
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C) − − 0.5
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C) − − 5.0
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 mAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage VGS(th) 0.5 − 1.5 Vdc
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−to−Source On−Resistance rDS(on) W
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) − 5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc) − − 3.5
Forward Transconductance gfs 100 − − mmhos
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss − 40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss − 12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss − 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time td(on) − − 20 ns
(VDD = 30 Vdc, ID = 0.2 Adc,)
Turn−Off Delay Time td(off) − − 20
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.

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 BSS138LT1

TYPICAL ELECTRICAL CHARACTERISTICS

0.8 0.9
TJ = 25°C VGS = 3.5 V VDS = 10 V 25°C
0.7 0.8
- 55°C
I D , DRAIN CURRENT (AMPS)

I D , DRAIN CURRENT (AMPS)

VGS = 3.25 V
0.6 0.7
150°C
VGS = 3.0 V 0.6
0.5
VGS = 2.75 V 0.5
0.4
0.4
0.3 VGS = 2.5 V
0.3
0.2 0.2
0.1 0.1

0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

2.2 1.25
RDS(on) , DRAIN-TO-SOURCE RESISTANCE

ID = 1.0 mA
2
VGS = 10 V
Vgs(th) , VARIANCE (VOLTS)

1.8 ID = 0.8 A 1.125

(NORMALIZED)

1.6
VGS = 4.5 V
1.4 ID = 0.5 A 1

1.2

1 0.875

0.8

0.6 0.75
-55 -5 45 95 145 -55 -30 -5 20 45 70 95 120 145
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On−Resistance Variation with Figure 4. Threshold Voltage Variation

Temperature with Temperature

10 1.0E-5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

VDS = 40 V
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)

TJ = 25°C
8
1.0E-6 150°C

6
125°C
1.0E-7

4
ID = 200 mA
1.0E-8
2

0 1.0E-9
0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 35 40 45 50
QT, TOTAL GATE CHARGE (pC) VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5. Gate Charge Figure 6. IDSS

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 BSS138LT1

TYPICAL ELECTRICAL CHARACTERISTICS

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

10 8
VGS = 2.5 V VGS = 2.75 V
9
7
150°C
8
150°C 6
7

6 5

5 4
25°C
4 25°C
3
3 -55°C

2 2 -55°C

1 1
0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 7. On−Resistance versus Drain Current Figure 8. On−Resistance versus Drain Current
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

6 4.5
VGS = 4.5 V VGS = 10 V
5.5
150°C 4 150°C
5
4.5 3.5
4
3
3.5
3 25°C 2.5 25°C

2.5 2
2 -55°C
1.5 -55°C
1.5
1 1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 9. On−Resistance versus Drain Current Figure 10. On−Resistance versus Drain
Current

1 120

100
I D , DIODE CURRENT (AMPS)

TJ = 150°C 25°C -55°C

0.1 80

60
Ciss
0.01 40
Coss
20
Crss
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25
VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 11. Body Diode Forward Voltage Figure 12. Capacitance

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 BSS138LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AN

NOTES:
D 1. DIMENSIONING AND TOLERANCING PER
SEE VIEW C ANSI Y14.5M, 1982.
3 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
E HE BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
c
1 2 MILLIMETERS INCHES
b DIM MIN NOM MAX MIN NOM MAX
e 0.25 A 0.89 1.00 1.11 0.035 0.040 0.044
A1 0.01 0.06 0.10 0.001 0.002 0.004
q b 0.37 0.44 0.50 0.015 0.018 0.020
c 0.09 0.13 0.18 0.003 0.005 0.007
D 2.80 2.90 3.04 0.110 0.114 0.120
A E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.081
L L 0.10 0.20 0.30 0.004 0.008 0.012
A1 L1 0.35 0.54 0.69 0.014 0.021 0.029
L1 HE 2.10 2.40 2.64 0.083 0.094 0.104
VIEW C STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035
SCALE 10:1 ǒinches
mm Ǔ

0.8
0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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PUBLICATION ORDERING INFORMATION

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