UNISONIC TECHNOLOGIES CO.

, LTD
2SD1804 NPN SILICON TRANSISTOR

HIGH CURRENT SWITCHING

APPLICATIONS
1
TO-220

 FEATURES
* Low collector-to-emitter saturation voltage
* High current and high fT
1
* Excellent linerarity of hFE.
* Fast switching time
TO-251
* Small and slim package making it easy to make UTC 2SD1804
applied sets smaller.
1
TO-252

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SD1804L-x-TA3-T 2SD1804G-x-TA3-T TO-220 B C E Tube
2SD1804L-x-TM3-T 2SD1804G-x-TM3-T TO-251 B C E Tube
2SD1804L-x-TN3-R 2SD1804G-x-TN3-R TO-252 B C E Tape Reel
Note: Pin Assignment: B: Base C: Collector E: Emitter

 MARKING

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2SD1804 NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 8 A
Collector Current(PULSE) IC(PULSE) 12 A
TO-220 2
TA=25°C W
TO-251/TO-252 1
Collector Dissipation PD
TO-220 65
TC=25°C W
TO-251/TO-252 20
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55~+150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, RBE= 50 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V
Collector Cutoff Current ICBO VCB=40V, IE=0 1 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0 1 μA
hFE1 VCE=2V, IC=0.5A 70 400
DC Current Gain
hFE2 VCE=2V, IC=6A 35
Gain-Bandwidth Product fT VCE=5V, IC=1A 180 MHz
Output Capacitance Cob VCE=10V, f=1MHz 65 pF
Collector-Emitter Saturation Voltage VCE(SAT) IC=4A, IB=0.2A 200 400 mV
Base-Emitter Saturation Voltage VBE(SAT) IC=4A, IB=0.2A 0.95 1.3 V
Storage Time tSTG See test circuit 500 ns
Fall Time tF See test circuit 20 ns

 CLASSIFICATION OF hFE1
RANK Q R S T
RANGE 70-140 100-200 140-280 200-400

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2SD1804 NPN SILICON TRANSISTOR

 TEST CIRCUIT

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2SD1804 NPN SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS
Colletcor Current, IC -A

Colletcor Current, IC -A
Colletcor Current, IC - A

DC Current Gain, hFE

Colletcor Current, IC (A) Colletcor to Base Voltage, VCB (V)

5 5
VCE=5V f=1MHz
3 3
Gain-Bandwidth Product, fT -MHz

Output Capacitance, COB-pF

2 2

100
100
7 7
5 5

3 3
2
2

10 10
2 3 5 7 0.1 2 3 5 71.0 2 3 5 7 10 5 7 1.0 2 3 5 7 10 2 3 5 7 100

fT - IC COB - VCB

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2SD1804 NPN SILICON TRANSISTOR
 TYPICAL CHARACTERISTICS(Cont.)

Collector Current, IC (A) Collector Current, IC (A)

1000 10
7 IC/IB=20 Ic/IB=20
7
Saturation Voltage, VCE(SAT) - mV

Saturation Voltage, VBE(SAT) -V

5
5
3
Collector to Emitter

Base to Emitter
3
2
2
100
TA=75℃ TA=-25℃
7 1.0
5
7
3
5
TA=25℃ TA=25℃
2 TA=75℃
TA=-25℃ 3
10 2
5 70.01 2 3 5 70.1 2 3 5 71.0 2 3 5 710 5 70.01 2 3 5 7 2 3 5 7 1.0 2 3 5 7 10
0.1
VCE(SAT) - IC VBE(SAT) - IC

Colletcor to Emitter Voltage, VCE (V) Ambient Temperature, Ta (℃)

2 24
Icp 10ms
10
7 1ms
Collector Dissipation, PC - W

5 IC 20
Collector Current, IC - A

3
C

100ms
O

2
pe

16
ra

1.0
tio
D

7
C

5 12
TC
O
pe

=2

3
r

5℃
at

2
io

8
n
Ta

0.1
=2

7
5℃

5
4
3 TC=25℃, One Pulse For No heat sink
2 PNP,minus sign is omitted. 1 160
0.01 00
0.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100 20 40 60 80 100 120 140
ASO PD -Ta

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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