0% found this document useful (0 votes)
78 views6 pages

HMC 607 Chips

The document describes a GaAs MMIC high isolation SPDT switch that covers DC to 15 GHz. It has high isolation (>50 dB at 10 GHz) and low insertion loss (1.4 dB typical at 6 GHz). It requires no bias supply and uses complementary negative control voltage logic of -5/0V.

Uploaded by

payam79b
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
78 views6 pages

HMC 607 Chips

The document describes a GaAs MMIC high isolation SPDT switch that covers DC to 15 GHz. It has high isolation (>50 dB at 10 GHz) and low insertion loss (1.4 dB typical at 6 GHz). It requires no bias supply and uses complementary negative control voltage logic of -5/0V.

Uploaded by

payam79b
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

HMC607

v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz

Typical Applications Features


The HMC607 is ideal for: High Isolation: >50 dB @ 10 GHz
• Telecom Infrastructure Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz
• Microwave Radio & VSAT Non-Reflective Design
• Military Radios, Radar & ECM Die Size: 2.05 x 1.1 x 0.1 mm
• Space Systems
4 • Test Instrumentation

TE
SWITCHES - CHIP

Functional Diagram General Description


The HMC607 is a broadband high isolation non-
LE reflective GaAs MESFET SPDT MMIC chip. Covering
DC to 15 GHz, the switch features >55 dB isolation at
lower frequencies and >45 dB at higher frequencies.
The switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply.
SO

Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System


B

Parameter Frequency Min. Typ. Max. Units


DC - 6 GHz 1.4 1.7 dB
Insertion Loss DC - 10 GHz 1.7 2.5 dB
DC - 15 GHz 2.7 3.4 dB
O

DC - 6 GHz 55 65 dB
Isolation* DC - 10 GHz 50 60 dB
DC - 15 GHz 45 55 dB
DC - 6 GHz 17 dB
Return Loss “On State”
DC - 15 GHz 11 dB
DC - 6 GHz 13 dB
Return Loss RF1, RF2 “Off State”
DC - 15 GHz 17 dB

Input Power for 1 dB Compression 0.5 - 15 GHz 21 26 dBm

Input Third Order Intercept


0.5 - 15 GHz 44 49 dBm
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF) DC - 15 GHz 3 ns
tON, tOFF (50% CTL to 10/90% RF) 5 ns
*Isolation data taken with probe on the die

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343
4 - 32 781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
978-250-3373
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz

Insertion Loss Isolation*


0 0

-15
-1
INSERTION LOSS (dB)

ISOLATION (dB)
-30 RF1
RF2
-2
-45
+25 C
-3 +85 C
-55 C -60
4

TE
-4
-75

SWITCHES - CHIP
-5 -90
0 3 6 9 12 15 0 3 6 9 12 15
FREQUENCY (GHz) FREQUENCY (GHz)

Return Loss
-5

RFC
RF1, RF2 on
RF1, RF2 off
LE 0.1 and 1 dB Input Compression Point
COMPRESSION POINT (dBm)

30

25
RETURN LOSS (dB)

-15
SO
20
0.1 dB Compression Point
-25 1 dB Compression Point

15

-35 10
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 16
FREQUENCY (GHz) FREQUENCY (GHz)
B

Input Third Order Intercept Point


O

60

55

50
IP3 (dBm)

45

+25 C
40 +85 C
-55 C

35

30
0 2 4 6 8 10 12 14 16
FREQUENCY (GHz)

*Isolation data taken with probe on the die

For price,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact delivery,
Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
978-250-3373
• Order online at www.analog.com 4 - 33
Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz

Absolute Maximum Ratings Control Voltages


RF Input Power (A, A, B, B = 0/-5V) State Bias Condition
+30 dBm (@ +50 °C)
(0.5 - 6 GHz)
Low 0 to -0.2V @ 10 uA Max.
Control Voltage Range (A, A, B, B) +1V to -7.5 Vdc
High -5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Channel Temperature 150 °C
Thermal Resistance (RTH)
94 °C/W
(junction to lead) ELECTROSTATIC SENSITIVE DEVICE

4 Storage Temperature -65 to +150 °C OBSERVE HANDLING PRECAUTIONS

TE
Operating Temperature -55 to +85 °C
SWITCHES - CHIP

Truth Table
Control Input Signal Path State
B B A A RFC to RF1 RFC to RF2
Low High Low High ON OFF
High
High
Low
Low
Low
High
High
Low
High
LE
Low
High
Low
Caution: Do not “Hot Switch” power levels greater than +27 dBm (A, A, B, B = 0/-5V).
OFF
OFF
ON
ON
OFF
ON
SO

Suggested Driver Circuit for Single Line Control


B
O

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
4 - 34 781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
978-250-3373
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz

Outline Drawing

TE
SWITCHES - CHIP
LE
SO

NOTES:
Die Packaging Information [1] 1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Standard Alternate 3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALIZATION: GOLD
WP-17 (Waffle Pack) [2] 5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
B

[1] Refer to the “Packaging Information” section for die 7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS.
packaging dimensions. 8. OVERALL DIE SIZE ±.002”
[2] For alternate packaging information contact Hittite
Microwave Corporation.
O

Pad Descriptions
Pad Number Function Description Interface Schematic

This pin is DC coupled and matched to 50 Ohm. Blocking


1, 4, 7 RF1, RFC, RF2
capacitors are required if RF line potential is not equal to 0V.

2, 10 B

3, 11 B
See truth table and control voltage table.
Alternate A & B control pads provided.
5, 8 A

6, 9 A

Die Bottom GND Die bottom must be connected to RF ground.

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com 4 - 35
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz

Assembly Diagram

TE
SWITCHES - CHIP

LE
SO
B
O

For price, delivery,


Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
4 - 36 781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
978-250-3373
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs


The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film Wire Bond
substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.076mm
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be (0.003”)
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2). 4

TE
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).

SWITCHES - CHIP
Handling Precautions 0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Figure 1.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the

nitrogen environment. LE
sealed ESD protective bag has been opened, all die should be stored in a dry

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean


the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
0.102mm (0.004”) Thick GaAs MMIC

0.076mm
(0.003”)
Wire Bond

Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
RF Ground Plane
SO
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
0.150mm (0.005”) Thick
should not be touched with vacuum collet, tweezers, or fingers.
Moly Tab
0.254mm (0.010”) Thick Alumina
Mounting Thin Film Substrate
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or Figure 2.
with electrically conductive epoxy. The mounting surface should be clean and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
B

Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076
mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and
O

a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultra-
sonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate.
All bonds should be as short as possible <0.31 mm (12 mils).

For price,Hittite
delivery,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343
781-329-4700 Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com 4 - 37
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com

You might also like