Electron Microscopy Basics
Electron Microscopy Basics
Second electrons
sample Incoherent elastic From within the specimen (SEM
backscattered electrons (SEM)
Characteristic
X-rays (EDS)
Auger electrons (XPS)
Visible light
Sample
Incoherent inelastic
Bremsstrahlung scattered electrons
X-rays (EDS) (EELS)
Direct beam
Incoherent elastic
(imaging, diffraction,
Coherent elastic forward scattered
EELS)
scattered electrons (STEM, Electrons (STEM,
Diffraction, EELS) diffraction,EELS)
Energy Dispersive X-ray
Spectroscopy
(EDS)
EDS spectrum
EDS spectrum
EDS: Energy Dispersive Spectroscopy
EDXS: Energy Dispersive X-ray
Spectroscopy
X-EDS: X-ray Energy Dispersive
Spectroscopy
EDX: Energy Dispersive X-ray analysis
Quantification
Peak intensities are proportional to concentration and specimen thickness.
𝐶𝐴 𝐼𝐴
= 𝐾𝐴𝐵
𝐶𝐵 𝐼𝐵
Crystal (Si(Li)): Absorbs the energy of incoming x-rays by ionization, yielding free
electrons in the crystal that become conductive and produce an electrical charge
bias. The x-ray absorption thus converts the energy of individual x-rays into
electrical voltages of proportional size; the electrical pulses correspond to the
characteristic x-rays of the element.
Detection Mechanism
When X-rays deposit energy in a semiconductor, electrons are transferred from the
valence band to the conduction band, creating electron-hole pairs. The energy required
for this transfer in Si is 3.8 eV at liquid-N2 temperature. (This energy is a statistical
quantity, so don’t try to link it directly to the band gap.) Since characteristic X-rays
typically have energies well above 1 keV, thousands of electron-hole pairs can be
generated by a single X-ray. The number of electrons or holes created is directly
proportional to the energy of the X-ray photon. Even though all the X-ray energy is not,
in fact, converted to electron-hole pairs, enough are created for us to collect sufficient
signal to distinguish most elements in the periodic table, with good statistical precision.
EELS
Like SEM, the STEM technique scans a very finely focused beam of
electrons across the sample in a raster pattern. Interactions between the
beam electrons and sample atoms generate a serial signal stream, which is
correlated with beam position to build a virtual image in which the signal
level at any location in the sample is represented by the gray level at the
corresponding location in the image. Its primary advantage over
conventional SEM imaging is the improvement in spatial resolution.
CY 524 (Nanoscience and Nanotechnology)
Dr. Priyabrat Dash 38
NIT Rourkela, India
CY 524 (Nanoscience and Nanotechnology)
Dr. Priyabrat Dash 39
NIT Rourkela, India
Electron Diffraction
Rd=lL
R is measured
Transmitted Beam
d is the unknown
L
l is the electron wavelength
L is the camera length Diffracted Beam
(lL is the camera constant)
Rd=lL
R=0.027A*650mm/2.35A