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Part Derating Parameters

The document provides derating parameters for various electronic components under severe and benign environmental conditions. It lists parameters such as voltage, current, temperature, and power dissipation limits. The derating parameters aim to improve reliability by operating components below their maximum ratings.

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Hareish
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64 views4 pages

Part Derating Parameters

The document provides derating parameters for various electronic components under severe and benign environmental conditions. It lists parameters such as voltage, current, temperature, and power dissipation limits. The derating parameters aim to improve reliability by operating components below their maximum ratings.

Uploaded by

Hareish
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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System Reliability Center

201 Mill Street


Rome, NY 13440-6916
888.722.8737
or 315.337.0900
Fax: 315.337.9932

Part Derating Parameters


Environment
Part Type Derating Parameters Severe Benign
Capacitors
Fixed Aluminum Voltage (% max rated) 70% 80%
(Electrolytic) Temperature (°C) Tmax - 20°C Tmax - 20°C
Fixed Ceramic Voltage (% max rated) 60% 70%
Temperature (°C) Tmax - 10°C Tmax - 10°C
Fixed Mica/Glass Voltage (% max rated) 60% 70%
Temperature (°C) Tmax - 10°C Tmax - 10°C
Fixed Paper/Plastic Voltage (% max rated) 60% 70%
Temperature (°C) Tmax - 10°C Tmax - 10°C
Fixed Tantalum (Non- Voltage (% max rated) 70% 80%
Solid) Temperature (°C) Tmax - 20°C Tmax - 20°C
Reverse Voltage 2% 2%
Fixed Tantalum (Solid) Voltage (% max rated) 70% 80%
Temperature (°C) Tmax - 20°C Tmax - 20°C
Reverse Voltage 2% 2%
Variable Air Voltage (% max rated) 60% 70%
Temperature (°C) Tmax - 10°C Tmax - 10°C
Circuit Breakers
General Purpose Current (% max rated) 80% 90%
Connectors
(All Types) Voltage 70% 80%
(% of Dielectric Withstand Voltage)

Current (% max rated) 70% 85%

Insert Temperature Limit (°C) Tmax - 50°C Tmax - 25°C


Crystals
SAW Input Power from max (>500 MHz) 13 dBm 10 dBm
Input Power from max (<500 MHz) 18 dBm 13 dBm
Temperature (°C) 90°C 90°C
Diodes
General Purpose Forward Current (IF) 90% <100%
(Signal/Switching) Reverse Voltage (VR) 70% 80%
Max Junction Temperature (TJ) 95°C 115°C
Microwave Power Dissipation (PD) 90% <100%
(Schottky/PIN) Reverse Voltage (VR) 70% 80%
Max Junction Temperature (TJ) 95°C 115°C
Power Rectifier Forward Current (IF) 90% <100%
Reverse Current (VR) 70% 80%
Max Junction Temperature (TJ) 95°C 115°C
Thyristor On-State Current (IT) 90% <100%
Off-State Voltage (VR) 70% 80%
Max Junction Temperature (TJ) 95°C 115°C
Transient Voltage Power Dissipation (PD) 90% <100%
Suppressor Average Current (IO) 90% <100%
Max Junction Temperature (TJ) 95°C 115°C
Voltage Regulator/ Power Dissipation (PD) 90% <100%
Reference Max Junction Temperature (TJ) 95°C 115°C

1
System Reliability Center
201 Mill Street
Rome, NY 13440-6916
888.722.8737
or 315.337.0900
Fax: 315.337.9932

Part Derating Parameters (Cont'd)


Environment
Part Type Derating Parameters Severe Benign
Electric Motors
General Purpose Bearing Load (% max rated) 75% 75%
Temperature (°C) Tmax - 25°C Tmax - 25°C
Fans
General Purpose Bearing Load (% max rated) 75% 75%
Temperature (°C) Tmax - 25°C Tmax - 25°C
Filters
Capacitor Voltage (% max rated) 60% 70%
Temperature (°C) Tmax - 10°C Tmax - 10°C
Inductors Current DC (% max rated) 90% <100%
Temperature (°C) Tmax - 25°C Tmax - 25°C
Fuzes Normal Response Current 80% 90%
(% max rated)

Time Delay Current (% max rated) 50% 85%


Hybrids
Thick Film Resistor Power Dissipation (PD) 50% 70%
Thin Film Resistor Power Dissipation (PD) 50% 70%
Chip Resistor Power Dissipation (PD) 50% 70%
Chip Capacitors Voltage (% max rated) 60% 70%
General Purpose Diode Forward Current (IF) 90% <100%
Reverse Voltage (VR) 70% 80%
Microwave Diode Power Dissipation (PD) 90% <100%
Reverse Voltage (VR) 70% 80%
Bipolar Transistor Power Dissipation (PD) 90% <100%
Voltage (VCE) 70% 80%
Field Effect Transistor Power Dissipation (PD) 90% <100%
Breakdown Voltage 90% <100%
Hybrid Package Max Junction Temperature (TJ) 95°C 115°C
Lamps
Incandescent Voltage (% max rated) 94% 94%
Temperature (°C) <175°C <175°C
Neon Current (% max rated) 98% 98%
Temperature (°C) <150°C <150°C
Magnetics
Transformer (Audio) Current Surge (% max rated) 90% <100%
Voltage Surge (% max rated) 90% <100%
Hot Spot Temperature (°C) Tmax - 25°C Tmax - 25°C
Transformer (Power) Current Surge (% max rated) 90% <100%
Voltage Surge (% max rated) 90% <100%
Hot Spot Temperature (°C) Tmax - 25°C Tmax - 25°C
Transformer (Pulse) Current Surge (% max rated) 90% <100%
Voltage Surge (% max rated) 90% <100%
Hot Spot Temperature (°C) Tmax - 25°C Tmax - 25°C
Coil (RF) Current (DC) (% max rated) 90% <100%
Voltage Surge (% max rated) 90% <100%
Hot Spot Temperature (°C) Tmax - 25°C Tmax - 25°C

2
System Reliability Center
201 Mill Street
Rome, NY 13440-6916
888.722.8737
or 315.337.0900
Fax: 315.337.9932

Part Derating Parameters (Cont'd)


Environment
Part Type Derating Parameters Severe Benign
MEMS
(Micro-Electro- Driving Frequency to Resonate 2.0 2.0
Mechanical Systems) Frequency Ratio
Relative Humidity 40% - 50% 40% - 50%
Microcircuits
Silicon Digital Fanout 90% <100%
(MOS & Bipolar) Frequency (% max rated) 90% <100%
Output Current 90% <100%
Max Junction Temperature (TJ) 95°C 115°C
Silicon Linear Power Dissipation (PD) 90% <100%
(MOS & Bipolar) Output Current 90% <100%
Max Junction Temperature (TJ) 95°C 115°C
GaAs Digital Max Channel Temperature (TCH) 105°C 125°C
GaAs Linear RF Input Power 90% <100%
Power Dissipation (PD) 90% <100%
Max Channel Temperature (TCH) 105°C 125°C
SiGe Digital Max Channel Temperature (TCH) 95°C 115°C
SiGe Linear Max Channel Temperature (TCH) 95°C 115°C
Optoelectronics
Injection Laser Diode Power Output (% max rated) 50% 75%
Max Junction Temperature (TJ) 95°C 115°C
Light Emitting Diode Max Junction Temperature (TJ) 95°C 115°C
Photo Diode Max Junction Temperature (TJ) 95°C 115°C
Photo Transistor Max Junction Temperature (TJ) 95°C 115°C
Fiber Cable Bend Radius % min. Rating 200% 200%
Cable Tension % Rated Strength 50% 50%
Fiber Tension % Proof Test 20% 20%
Relays
General Purpose Contact Current 75% Resistive Load 90% Resistive Load
(Continuous % max rated) 75% Capacitive Load 90% Capacitive Load
40% Inductive Load 75% Inductive Load
20% Motor 30% Motor
10% Filament (Lamp) 20% Filament (Lamp)
Contact Power (% max rated) 50% 70%
Temperature (°C) Tmax - 20°C Tmax - 20°C
Resistors
Fixed Composition Power Dissipation (PD) 50% 70%
Temperature (°C) Tmax - 30°C Tmax - 18°C
Fixed Film Power Dissipation (PD) 50% 70%
Temperature (°C) Tmax - 40°C Tmax - 24°C
Fixed Wirewound Power Dissipation (PD) 50% 70%
Temperature (°C) Tmax - 10°C Tmax - 6°C
Variable Non-Wirewound Power Dissipation (PD) 50% 70%
Temperature (°C) Tmax - 52°C Tmax - 31°C
Variable Wirewound Power Dissipation (PD) 50% 70%
Temperature (°C) Tmax - 32°C Tmax - 19°C

3
System Reliability Center
201 Mill Street
Rome, NY 13440-6916
888.722.8737
or 315.337.0900
Fax: 315.337.9932

Part Derating Parameters (Cont'd)


Environment
Part Type Derating Parameters Severe Benign
Switches
General Purpose Contact Current 75% Resistive Load 90% Resistive Load
(Continuous % max rated) 75% Capacitive Load 90% Capacitive Load
40% Inductive Load 75% Inductive Load
20% Motor 30% Motor
10% Filament (Lamp) 20% Filament (Lamp)
Contact Power (% max rated) 50% 70%
Contract Current (Surge) 80% 80%
Thermistors
Power Dissipation (PD) 50% 50%
Temperature (°C) Tmax - 50°C Tmax - 50°C
Transistors
Bipolar Junction Power Dissipation (PD) 90% <100%
Breakdown Voltage (VCE) 70% 80%
Max Junction Temperature (TJ) 95°C 115°C
Field Effect Transistor Power Dissipation (PD) 90% <100%
(Silicon) Breakdown Voltage (VBR) 90% <100%
Max Junction Temperature (TJ) 95°C 115°C
Field Effect Transistor Power Dissipation (PD) 90% <100%
(GaAs) Max Channel Temperature (TCH) 105°C 125°C
Hetro Junction Bipolar Power Dissipation (PD) 90% <100%
Transistor (GaAs) Max Channel Temperature (TCH) 105°C 125°C
High Mobility Transistor Power Dissipation (PD) 90% <100%
(GaAs) Max Channel Temperature (TCH) 105°C 125°C
Tubes
Cathode Ray Power Output (% max rated) 90% 90%
Temperature (°C) Tmax - 20°C Tmax - 20°C
Microwave Power Output (% max rated) 80% 80%
Reflection Power (% max rated) 50% 50%
Duty Cycle 75% 75%
Temperature (°C) Tmax - 20°C Tmax - 20°C

Copyright  2001 IIT Research Institute. All rights reserved.

Source:
• RAC Publication, D-RATE, Electronic Derating for Optimum Performance.

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