DG441, DG442

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Vishay Siliconix
Quad SPST CMOS Analog Switches
DESCRIPTION FEATURES
The DG441, DG442 monolithic quad analog switches are • Low on-resistance: 50 
designed to provide high speed, low error switching of • Low leakage: 80 pA
analog and audio signals. The DG441 has a normally closed
• Low power consumption: 0.2 mW
function. The DG442 has a normally open function.
Combining low on-resistance (50 , typ.) with high speed • Fast switching action - ton: 150 ns
(ton 150 ns, typ.), the DG441, DG442 are ideally suited for • Low charge injection - Q: - 1 pC
upgrading DG201A/202 sockets. Charge injection has been • DG201A/DG202 upgrades
minimized on the drain for use in sample-and-hold circuits.
• TTL/CMOS-compatible logic
To achieve high voltage ratings and superior switching
performance, the DG441, DG442 are built on Vishay • Single supply capability
Siliconix’s high-voltage silicon-gate process. An epitaxial • Material categorization: for definitions of compliance
layer prevents latchup. please see www.vishay.com/doc?99912
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off. APPLICATIONS
• Audio switching
BENEFITS • Battery powered systems
• Less signal errors and distortion • Data acquisition
• Reduced power supply requirements • Hi-Rel systems
• Faster throughput • Sample-and-hold circuits
• Improved reliability • Communication systems
• Reduced pedestal errors • Automatic test equipment
• Simplifies retrofit • Medical instruments
• Simple interfacing

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

IN1 1 16 IN2 D1 IN1 NC IN2 D2

Key
3 2 1 20 19
D1 2 15 D2

S1 4 18 S2
S1 3 14 S2
V- 5 17 V+
LCC
V- 4 Dual-In-Line and SOIC 13 V+
6 16
NC DG441 NC
DG441
GND 5 12 NC 7 Top View
GND 15 NC
Top View
S4 8 14 S3
S4 6 11 S3

D4 7 10 D3 9 10 11 12 13

D4 IN4 NC IN3 D3
IN4 8 9 IN3

TRUTH TABLE
LOGIC DG441 DG442
0 On Off
1 Off On
Note
• Logic “0”  0.8 V
Logic “1”  2.4 V

S11-1066-Rev. J, 30-May-11 1 Document Number: 70053

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ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
DG441DJ
DG441DJ-E3
16-pin plastic DIP
DG442DJ
DG442DJ-E3
DG441DY
-40 °C to +85 °C DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
16-pin narrow SOIC
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER LIMIT UNIT
Voltages referenced, V+ to V- 44
GND to V- 25
V
(V-) - 2 to (V+) + 2
Digital inputs a, VS, VD
or 30 mA, whichever occurs first
Current (any terminal) 30
mA
Peak current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100
(AK suffix) -65 to +150 °C
Storage temperature
(DJ, DY suffix) -65 to +125 °C
16-pin plastic DIP c 450
16-pin CerDIP d 900
Power dissipation (package) b mW
16-pin narrow SOIC d 900
LCC-20 d 1200
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 6 mW/°C above 75 °C
d. Derate 12 mW/°C above 75 °C

SCHEMATIC DIAGRAM (typical channel)

V+

5 V Reg

V-
Level
INX Shift/
Drive

V+

GND

V-
Fig. 1

S11-1066-Rev. J, 30-May-11 2 Document Number: 70053

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SPECIFICATIONS a (dual supplies)

TEST CONDITIONS A SUFFIX D SUFFIX
UNLESS OTHERWISE -55 °C TO +125 °C - 40 °C TO +85 °C
PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT
V+ = 15 V, V- = -15 V MIN. d MAX. d MIN. d MAX. d
VIN = 2.4 V, 0.8 V f
Analog Switch
Analog signal range e VANALOG Full - -15 15 -15 15 V
IS = -10 mA, VD = ± 8.5 V, Room 50 - 85 - 85
Drain-source on-resistance RDS(on)
V+ = 13.5 V, V- = -13.5 V Full - - 100 - 100

On-resistance match between IS = -10 mA, VD = ± 10 V, Room - - 4 - 4
RDS(on)
channels e V+ = 15 V, V- = -15 V Full - - 5 - 5
-0.5
Room ± 0.01 0.5 -0.5 0.5
IS(off)
V+ = 16.5, V- = -16.5 V, Full - -20 20 -5 5
Switch off leakage current
VD = ± 15.5 V, VS = ± 15.5 V
Room ± 0.01 -0.5 0.5 -0.5 0.5 nA
ID(off)
Full - -20 20 -5 5
V+ = 16.5 V, V- = -16.5 V, Room ± 0.08 -0.5 0.5 -0.5 0.5
Channel on leakage current ID(on)
VS = VD = ± 15.5 V Full - -40 40 -10 10
Digital Control
VIN under test = 0.8 V,
Input current VIN low IIL Full -0.01 -500 500 -500 500
all other = 2.4 V
nA
VIN under test = 2.4 V,
Input current VIN high IIH Full 0.01 -500 500 -500 500
all other = 0.8 V
Dynamic Characteristics
Turn-on time ton RL = 1 kW, CL = 35 pF, Room 150 - 250 - 250
DG441 VS = ± 10 V, Room 90 - 120 - 120 ns
Turn-off time toff see Fig. 2
DG442 Room 110 - 210 - 210
CL = 1 nF, VS = 0 V,
Charge injection e Q Room -1 - - - - pC
Vgen = 0 V, Rgen = 0 
Off Isolation e OIRR Room 60 - - - -
RL = 50 , CL = 5 pF,
Crosstalk dB
XTALK f = 1 MHz Room 100 - - - -
(channel-to-channel)
Source off capacitance e CS(off) Room 4 - - - -
f = 1 MHz
Drain off capacitance e CD(off) Room 4 - - - - pF
Channel on capacitance e CD(on) VANALOG = 0 V Room 16 - - - -
Power Supplies
Positive supply current I+ Full 15 - 100 - 100
V+ = 16.5 V, V- = -16.5 V, Room -0.0001 -1 - -1 -
Negative supply current I- μA
VIN = 0 V or 5 V Full - -5 - 5 -
Ground current IGND Full -15 -100 - -100 -

S11-1066-Rev. J, 30-May-11 3 Document Number: 70053

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SPECIFICATIONS a (single supply)

TEST CONDITIONS A SUFFIX D SUFFIX
UNLESS OTHERWISE -55 °C TO +125 °C - 40 °C TO +85 °C
PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT
V+ = 12 V, V- = 0 V, MIN. d MAX. d MIN. d MAX. d
VIN = 2.4 V, 0.8 V f
Analog Switch
Analog signal range e VANALOG Full - 0 12 0 12 V
Drain-source IS = -10 mA, VD = 3 V, 8 V, Room 100 - 160 - 160
RDS(on) 
on-resistance V+ = 10.8 V Full - - 200 - 200
Dynamic Characteristics
Turn-on time ton RL = 1 k, CL = 35 pF Room 300 - 450 - 450
ns
Turn-off time toff VS = 8 V, See Fig. 2 Room 60 - 200 - 200
CL = 1nF, Vgen = 6 V,
Charge injection Q Room 2 - - - - pC
Rgen = 0 
Power Supplies
Positive supply current I+ Full 15 - 100 - 100
-0.0001
V+ = 13.2 V, V- = 0 V, Room -1 - -1 -
Negative supply current I- μA
VIN = 0 or 5 V
Full - -100 - -100 -
Ground current IGND Full -15 -100 - -100 -
Notes
a. Refer to PROCESS OPTION FLOWCHARt
b. Room = 25 °C, full = as determined by the operating temperature suffix
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
e. Guaranteed by design, not subject to production test
f. VIN = input voltage to perform proper function




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S11-1066-Rev. J, 30-May-11 4 Document Number: 70053

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 80
V+ = 15 V
RDS(on) - Drain-Source On-Resistance (Ω)

70

RDS(on) - Drain-Source On-Resistance (Ω)

V- = - 15 V
±5V
80
60
125 °C

60 ±8V 50
85 °C
± 10 V
40 25 °C
± 12 V
40 ± 15 V
30

± 20 V 20
20 0 °C - 55 °C

10 - 40 °C

0 0
- 20 - 15 - 10 -5 0 5 10 15 20 - 15 - 10 - 5 0 5 10 15
VD - Drain Voltage (V) VD - Drain Voltage (V)
RDS(on) vs. VD and Power Supply Voltage RDS(on) vs. VD and Temperature

300 140
V- = 0 V R DS(on) - Drain-Source On-Resistance (Ω)
R DS(on) - Drain-Source On-Resistance (Ω)

250 120
125 °C
V+ = 5 V 85 °C
100
200

80 25 °C
150
60
8V
100 10 V
12 V 40 - 55 °C
15 V 0 °C
50 - 40 °C V+ = 12 V
20 V 20
V- = 0 V

0 0
0 4 8 12 16 20 0 2 4 6 8 10 12
VD - Drain Voltage (V) VD - Drain Voltage (V)
RDS(on) vs. VD and Unipolar Power Supply Voltage RDS(on) vs. VD and Temperature (Single 12-V Supply)

140 50

40 CL = 1 nF
120
Crosstalk
30
100
20 V+ = 15 V
V- = - 15 V
80
Q - (pC)
(- dB)

10
60
Off Isolation 0
40 V+ = 12 V
- 10
V- = 0 V
V+ = 15 V
20 V- = - 15 V - 20
Ref. 10 dBm
0 - 30
100 1K 10K 100K 1M 10M - 10 -5 0 5 10

f - Frequency (Hz) VS - Source Voltage (V)

Crosstalk and Off Isolation vs. Frequency Charge Injection vs. Source Voltage

S11-1066-Rev. J, 30-May-11 5 Document Number: 70053

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.4 20

IS(off), ID(off)
0

1.6 - 20

I S, I D - (pA)
VIN - (V)

- 40
ID(on)

0.8 - 60

V+ = 15 V
- 80 V- = - 15 V
For I(off), V D = - VS
0 - 100
0 5 10 15 20 - 15 - 10 -5 0 5 10 15

V+, V- Positive and Negative Supplies (V) VD or V S - Drain or Source Voltage (V)
Switching Threshold vs. Supply Voltage Source/Drain Leakage Currents

10 50
V+
IS(off), ID(off) 44 S D
0 40 5 V - CMOS
Compatible
IN

- 10
I S, I D - (pA)

30
V+ - (V)

IS(on) + ID(on) V-

- 20 20
TTL Compatible
V+ = 12 V VIN = 0.8 V, 2.4 V
- 30 V- = 0 V
For ID, V S = 0 10
For IS, V D = 0 CMOS
3 Compatible
- 40 0
0 2 4 6 8 10 12 0 - 10 - 20 - 30 - 40 - 50
VD or V S - Drain or Source Voltage (V) V- - Negative Supply (V)
Source/Drain Leakage Currents (Single 12 V Supply) Operating Voltage

160 500

V- = 0 V
140
tON 400

120
tON
300
100
t - (ns)
t - (ns)

80
200
tOFF
60
100
40 tOFF

20 0
± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22 8 10 12 14 16 18 20 22

Supply Voltage (V) VS - Source Voltage (V)

Switching Time vs. Power Supply Voltage Switching Time vs. Power Supply Voltage

S11-1066-Rev. J, 30-May-11 6 Document Number: 70053

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TEST CIRCUITS

+ 15 V 3V
Logic
Input tr < 20 ns
50 % 50 % tf < 20 ns
V+
0V
S D
10 V VO tOFF
Switch VS
IN RL CL Input VO
3V 1 k 35 pF 80 % 80 %
GND V-
Switch 0V
Output tON
- 15 V

CL (includes fixture and stray capacitance) Note: Logic input waveform is inverted for DG442.

Fig. 2 - Switching Time

+ 15 V
ΔV
O
VO
V+
Rg
S D INX
VO OFF ON OFF
(DG441)
IN CL
3V 1 nF
GND V- OFF ON OFF
INX
Q = ΔVO x CL
(DG442)
- 15 V

Fig. 3 - Charge Injection

C = 1 mF tantalum in parallel with 0.01 mF ceramic

+ 15 V
C + 15 V
C
V+
VS S1 D1
V+ VO
Rg = 50 Ω VS S D
IN1 50 Ω
Rg = 50 Ω
0 V, 2.4 V RL
S2 D2 VO IN
NC 0 V, 2.4 V

RL GND V- C
IN2
0 V, 2.4 V
GND V- C
- 15 V

- 15 V VS
Off Isolation = 20 log
VO
VS
XTA LK Isolation = 20 log
C = RF bypass VO

Fig. 4 - Crosstalk Fig. 5 - Off Isolation

S11-1066-Rev. J, 30-May-11 7 Document Number: 70053

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+ 15 V
C

V+ S

Meter
IN HP4192A
0 V, 2.4 V Impedance
Analyzer
D or Equivalent

GND V-
C

- 15 V
Fig. 6 - Source/Drain Capacitances
APPLICATIONS
+ 24 V
+ 15 V

RL
V+ I=3A + 15 V
DG442
+ 15 V 150 
VN0300 L, M VIN
IN 1/4 DG442
+ S D
VOUT
- CH +
-
10 k
+ 15 V
IN - 15 V H = Sample
GND V- L = Hold

0 = Load Off
1 = Load On

Fig. 7 - Power MOSFET Driver Fig. 8 - Open Loop Sample-and-Hold

VIN + VOUT
-

+ 15 V Gain error is determined only by the resistor

tolerance. Op amp offset and CMRR will limit ac-
V+ curacy of circuit.

GAIN1 R1
AV = 1 90 k

With SW4 Closed

GAIN2 R2
AV = 10 5 k
VOUT R1 + R2 + R3 + R4
= = 100
VIN R4
GAIN3 R3
AV = 20 4 k

GAIN4 R4
AV = 100 1 k
DG441 or DG442
V- GND

- 15 V

Fig. 9 - Precision-Weighted Resistor Programmable-Gain Amplifier

S11-1066-Rev. J, 30-May-11 8 Document Number: 70053

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PRODUCT SUMMARY
Part number DG441 DG441 DG442 DG442
Status code 2 2 2 2
Configuration SPST x 4, NC SPST x 4, NC SPST x 4, NO SPST x 4, NO
Single supply min. (V) 5 5 5 5
Single supply max. (V) 36 36 36 36
Dual supply min. (V) 5 5 5 5
Dual supply max. (V) 22 22 22 22
On-resistance () 50 50 50 50
Charge injection (pC) 1 1 1 1
Source on capacitance (pF) 16 16 16 16
Source off capacitance (pF) 4 4 4 4
Leakage switch on typ. (nA) 0.08 0.08 0.08 0.08
Leakage switch off max. (nA) 0.5 0.5 0.5 0.5
-3 dB bandwidth (MHz) - - - -
Package SO-16 (narrow) AS Plastic DIP-16 SO-16 (narrow) AS Plastic DIP-16
Multi purpose, Multi purpose, Multi purpose, Multi purpose,
Functional circuit / applications instrumentation, medical instrumentation, medical instrumentation, medical instrumentation, medical
and healthcare and healthcare and healthcare and healthcare
Interface Parallel Parallel Parallel Parallel
Single supply operation Yes Yes Yes Yes
Dual supply operation Yes Yes Yes Yes
Turn on time max. (ns) 250 250 250 250
Crosstalk and off isolation -60 -60 -60 -60

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70053.

S11-1066-Rev. J, 30-May-11 9 Document Number: 70053

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 Package Information
Vishay Siliconix

SOIC (NARROW): 16ĆLEAD

JEDEC Part Number: MS-012

MILLIMETERS INCHES
Dim Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.38 0.51 0.015 0.020
C 0.18 0.23 0.007 0.009
D 9.80 10.00 0.385 0.393
E 3.80 4.00 0.149 0.157
16 15 14 13 12 11 10 9 e 1.27 BSC 0.050 BSC

E H 5.80 6.20 0.228 0.244

L 0.50 0.93 0.020 0.037
1 2 3 4 5 6 7 8
Ĭ 0_ 8_ 0_ 8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300

D H
C

All Leads
0.101 mm
A1 Ĭ
e B L
0.004 IN

Document Number: 71194 www.vishay.com

02-Jul-01 1
 Package Information
Vishay Siliconix

PDIP: 16ĆLEAD

16 15 14 13 12 11 10 9

E1 E

1 2 3 4 5 6 7 8

D
S
Q1

A1 L

15°
C MAX
B1 e1 B eA

MILLIMETERS INCHES
Dim Min Max Min Max
A 3.81 5.08 0.150 0.200
A1 0.38 1.27 0.015 0.050
B 0.38 0.51 0.015 0.020
B1 0.89 1.65 0.035 0.065
C 0.20 0.30 0.008 0.012
D 18.93 21.33 0.745 0.840
E 7.62 8.26 0.300 0.325
E1 5.59 7.11 0.220 0.280
e1 2.29 2.79 0.090 0.110
eA 7.37 7.87 0.290 0.310
L 2.79 3.81 0.110 0.150
Q1 1.27 2.03 0.050 0.080
S 0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482

Document Number: 71261 www.vishay.com

06-Jul-01 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-16

RECOMMENDED MINIMUM PADS FOR SO-16

0.372
(9.449)

0.047
(1.194)
(6.248)

(3.861)
0.246

0.152
0.022 0.050 0.028
(0.559) (1.270) (0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72608

24 Revision: 21-Jan-08
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