Table of Contents:

Chapter One:

1.1. Introduction

Chapter Two:

2.1. What is P-N Junction?

2.2. Formation of P-N Junction

Chapter Three

3.1. Biasing Conditions for the P-N Junction Diode

3.1.1. Forward Bias

3.1.2. Reverse Bias

3.2. P-N Junction Formula

Chapter Four:

4.1. How does current flow in P-N junction diode?

4.2. V-I Characteristics of P-N Junction Diode

4.3. Applications of P-N Junction Diode

Summary

Reference

1
 Chapter One
1.1. Introduction
Semiconductors are materials whose conductivity lies between conductors
and insulators. Semiconductors are classified as intrinsic semiconductors
and extrinsic semiconductors. Extrinsic semiconductors are further
classified as N-type and P-type semiconductors.[6]

The P-N junction is formed between the p-type and the n-type
semiconductors. In this session, let us know more about the P-N Junction.

On the basis of the type of impurities added, the semiconductors are

classified as p-type (positively charged) and n-type (negatively charged).
When the p and n types are fused together, it forms a "p-n junction
semiconductor." When a p-n junction semiconductor is affixed to an
external voltage source, it is called a "p-n junction diode." The p-n junction
diode is an interface between an n-type and a p-type semiconductor
material. The n-type has more electrons and the p-type has more holes
(deficiency of electrons or positive charge).[6]

An intrinsic semiconductor is a pure material made of elements from group

IV of the periodic table such as silicon (Si) and germanium (Ge). These
elements have four valence electrons.[3]

2
 Chapter Two
2.1. What is P-N Junction?
Definition: A P-N junction is an interface or a boundary between two
semiconductor material types, namely the p-type and the n-type, inside a
semiconductor.[3]

In a semiconductor, the P-N junction is created by the method of doping.

The p-side or the positive side of the semiconductor has an excess of holes,
and the n-side or the negative side has an excess of electrons. The process
of doping is explained in further detail in the next section.[3]

2.2. Formation of P-N Junction

As we know, if we use different semiconductor materials to make a P-N
junction, there will be a grain boundary that would inhibit the movement of
electrons from one side to the other by scattering the electrons and holes
and thus, we use the process of doping. We will understand the process of
doping with the help of this example. Let us consider a thin p-type silicon
semiconductor sheet. If we add a small amount of pentavalent impurity to
this, a part of the p-type Si will get converted to n-type silicon. This sheet
will now contain both the p-type region and the n-type region and a
junction between these two regions. The processes that follow after
forming a P-N junction are of two types – diffusion and drift. There is a
difference in the concentration of holes and electrons at the two sides of a
junction. The holes from the p-side diffuse to the n-side, and the electrons
from the n-side diffuse to the p-side. These give rise to a diffusion current
across the junction.[1]

3
Also, when an electron diffuses from the n-side to the p-side, an ionised
donor is left behind on the n-side, which is immobile. As the process goes
on, a layer of positive charge is developed on the n-side of the junction.
Similarly, when a hole goes from the p-side to the n-side, an ionized
acceptor is left behind on the p-side, resulting in the formation of a layer of
negative charges in the p-side of the junction. This region of positive charge
and negative charge on either side of the junction is termed as the
depletion region. Due to this positive space charge region on either side of
the junction, an electric field with the direction from a positive charge
towards the negative charge is developed. Due to this electric field, an
electron on the p-side of the junction moves to the n-side of the junction.
This motion is termed the drift. Here, we see that the direction of the drift
current is opposite to that of the diffusion current.[1]

4
 Chapter Three
3.1. Biasing Conditions for the P-N Junction Diode
There are two operating regions in the P-N junction diode:

P-type and N-type

There are three biasing conditions for the P-N junction diode, and this is
based on the voltage applied:[4]

Zero bias: No external voltage is applied to the P-N junction diode.[4]

Forward bias: The positive terminal of the voltage potential is connected to

the p-type while the negative terminal is connected to the n-type.[4]

Reverse bias: The negative terminal of the voltage potential is connected to

the p-type and the positive is connected to the n-type.[4]

3.1.1 Forward Bias

When the p-type is connected to the battery’s positive terminal and the n-
type to the negative terminal, then the P-N junction is said to be forward-
biased. When the P-N junction is forward biased, the built-in electric field at
the P-N junction and the applied electric field are in opposite directions.
When both the electric fields add up, the resultant electric field has a
magnitude lesser than the built-in electric field. This results in a less
resistive and thinner depletion region. [5]

5
The depletion region’s resistance becomes negligible when the applied
voltage is large. In silicon, at the voltage of 0.6 V, the resistance of the
depletion region becomes completely negligible, and the current flows
across it unimpeded.

3.1.2. Reverse Bias

When the p-type is connected to the battery’s negative terminal and the n-
type is connected to the positive side, the P-N junction is reverse biased. In
this case, the built-in electric field and the applied electric field are in the
same direction. When the two fields are added, the resultant electric field is
in the same direction as the built-in electric field, creating a more resistive,
thicker depletion region. The depletion region becomes more resistive and
thicker if the applied voltage becomes larger.[4]

3.2. P-N Junction Formula

The formula used in the P-N junction depends upon the built-in potential
difference created by the electric field is given as:

Where,

E0 is the zero bias junction voltage , VT is the thermal voltage of 26mV at

room temperature, ND and NA are the impurity concentrations, ni is the
intrinsic concentration.[5]

6
 Chapter Four
4.1. How does current flow in the PN junction diode?
The flow of electrons from the n-side towards the p-side of the junction
takes place when there is an increase in the voltage. Similarly, the flow of
holes from the p-side towards the n-side of the junction takes place along
with the increase in the voltage. This results in the concentration gradient
between both sides of the terminals. Due to the concentration gradient
formation, charge carriers will flow from higher-concentration regions to
lower-concentration regions. The movement of charge carriers inside the P-
N junction is the reason behind the current flow in the circuit.[6]

4.2. V-I Characteristics of P-N Junction Diode

VI characteristics of P-N junction diodes is a curve between the voltage and

current through the circuit. Voltage is taken along the x-axis while the
current is taken along the y-axis. The above graph is the V-I characteristics
curve of the P-N junction diode. With the help of the curve, we can
understand that there are three regions in which the diode works, and they
are: Zero bias , Forward bias ,Reverse bias.[3]

When the P-N junction diode is in zero bias condition, there is no external
voltage applied and this means that the potential barrier at the junction
does not allow the flow of current.[3]

7
When the P-N junction diode is in forward bias condition, the p-type is
connected to the positive terminal while the n-type is connected to the
negative terminal of the external voltage. When the diode is arranged in
this manner, there is a reduction in the potential barrier. For silicone
diodes, when the voltage is 0.7 V and for germanium diodes, when the
voltage is 0.3 V, the potential barriers decrease, and there is a flow of
current. [1]

When the diode is in forward bias, the current increases slowly, and the
curve obtained is non-linear as the voltage applied to the diode overcomes
the potential barrier. Once the diode overcomes the potential barrier, the
diode behaves normally, and the curve rises sharply as the external voltage
increases, and the curve obtained is linear.[1]

When the P-N junction diode is in negative bias condition, the p-type is
connected to the negative terminal while the n-type is connected to the
positive terminal of the external voltage. This results in an increase in the
potential barrier. Reverse saturation current flows in the beginning as
minority carriers are present in the junction. [1]

When the applied voltage is increased, the minority charges will have
increased kinetic energy which affects the majority charges. This is the
stage when the diode breaks down. This may also destroy the diode. [1]

4.3. Applications of P-N Junction Diode

P-N junction diode can be used as a photodiode as the diode is sensitive to

the light when the configuration of the diode is reverse-biased.

It can be used as a solar cell.

When the diode is forward-biased, it can be used in LED lighting

applications.

It is used as rectifier in many electric circuits and as a voltage-controlled

oscillator in varactors.[2]
8
Summary
A P-N junction is an interface or a boundary between two semiconductor
material types, namely the p-type and the n-type, inside a semiconductor.

In a semiconductor, the P-N junction is created by the method of doping.

Reference
1- Riordan, Michael; Hoddeson, Lillian (1988). Crystal Fire: The Invention
of the Transistor and the Birth of the Information Age. W. W. Norton
& Company. pp. 88–97. ISBN 978-0-393-31851-7.
2- Lashkaryov, V. E. (2008) [1941]. "Investigation of a Barrier Layer by
the Thermoprobe Method" (PDF). Ukr. J. Phys. 53 (special edition):
53–56. ISSN 2071-0194. Archived from the original (PDF) on 2015-09-
28.

3- Shockley, William (1950). Electrons and Holes in Semiconductors: With

Applications to Transistor Electronics, Bell Telephone Laboratories series,
Van Nostrand. ISBN 0882753827, 780882753829.

4- Mishra, Umesh (2008). Semiconductor Device Physics and Design.

Springer. pp. P155. ISBN 978-1-4020-6480-7.

5- Hook, J. R.; H. E. Hall (2001). Solid State Physics. John Wiley &
Sons. ISBN 978-0-471-92805-8.

6- Luque, Antonio; Hegedus, Steven (29 March 2011). Handbook of

Photovoltaic Science and Engineering. John Wiley & Sons. ISBN 978-0-
470-97612-8.