UNIT-2

oF MOSs
FABRICATION AND ELECtRICAL PRoPE RTIES

AL n-MoS

Mos

To Ineicale f the bed Lirerarure

used n
the soitehing oRer orm
Connech on
need Fo be Shouwn
Logic

The MoS transishor 1 ma'jorily Carrier devia tn oidh Ehe Current

n Conduch ng Channe) b/ the Sour and dram 13 Conrolled by Vollage
applied to the qole.

Poly silCon ge
sto2

Vgko

to the regton
beneah the gE
hal altroded
ostively chatqed
are
he mobie

Ths Colled occumulaton mode

A Doo Ve volaqe 18
applie to me
9deretalhnq tn Some +Ve Chame on
gal The holes in hme body are repelled
Cepchon req0 romthe reoon dire dy beneah n
o1gsV
g ne Sulmg tn a deplehon o
orming bedh the geJe

A higher +Ve pofenh, eneeedinq VE, 1sopled

+ve cuarge to he golz The
artradh more
peoSOOOOeEversion region
hole) are repelleturher aud Cmalno depehm raion
oe deJron) in tne bedy are dtrched he
tne gate.
ryon beueeth
Ts Conducive y Y dahony In
h -5/-
body o Cae te nverSon e T h e thref haa velage, VE,
dm me noy do pow te bocdy oud
ha Bhick ness oide to. Ilo unelly tve.
 M, No, Mi Mn, Ne
Ygsco

Cut off
No Channd

Tas-o
P-9pe bod y

(a)

Vsd-Vgs assd> Ve
d tas
nt
o gs-VE
Ptyre bu
P-ype beody

(b)
c
Linear channd ormed
VdsS
ds Iocreases col

Ygut 9aKVE
Sahureho
Chennd inhe off
Vdsyves-Ve ds Indapndeu Yas
P-ype sodk

NoS stac w hao nyre-reions Calle Sure aud Jra

The tran sis hor Consis o

The Sour aud drain have ree dedrons The budy hno hde but
Fi9 a ) - Vgs VE
me bod9 aud e Seura or
drod are everse- bialed
Tee dehoy The JA b/o
Cun PRouos This mode terhon Cd Gatoff
So mos 2mo

The gale
kol VE
Rb eleconsalle he hannd Conneds te Srure aud

DnverSton region o
NoO an
d Couduchvi9 IncreaSep wi k
Conduch
The ne Camiers
dracn crest
9 vole
Vds= Vgs-Y9d

Vaso -e VgsY9d
here to
mo eJuhel tdun to puc
lo pped he
malt Poteuhb Vs
Curent fron dran b Jur. h Clan) am dms smre
Cumend ds Fo t
rau (619
 mNMoS Fabriatiev

Te Ce ssig Caried t cw
un aut
fr Siu CAa
SaA tm
Such wnrers ol tpeal n5 t 150m Jumk aud o.4 mm buu
ave dpe witn,ay bo to paConlaub-)n l:/C3 l o m
ednt in h Pnonal r s chm Cm 2-nch

2A
Juy si02, typicallAm tu 49on al o Aurkla hu to
t prad ur ac ay bon pans dury p Gng, a Prowde
uery insddSu n ont oidh may be deprid aus
patoune
3 The Surhalu i n Cov i a mmeo e6et wwc o epod o-ls
aSpu t acime m eeu dinhhew epr baUo

4 T po reed ay 1s b npopet ov Lyt ma o m-4h uda

d dho 14 tuke a bgeles wi
t n sstw Channdh
5A8 P n t tnoe a n erpo uv a d are pdy menes
Chardene), but bt fu az r r daho are Suddd
malk a eesy unr
eltey alh undenen
SThese areakare Sub Seneuy neadly ettu awe
Sio2 So th t vot S u e siudod d m
6 h e remainu pu re AE 1 remod aud bu e , S7o2 (1un )o

pdyuC dapeated Ca depeah Ccuo). In h i u l y

the pHtern duGA precu C acknD mpung Cnnb)y aJ reashk

ncCos)
m a u poy6;lCon b be pct cnad
1 Furtner ptdG rest Coah

are to be dHuk t o Sounla ad drnn a Swn Dift A aclie

d a g Gmhuk t deu
e to
myp in orm, peSpheu) ov Srfa
nd huiu onide a t mt)
Nofe

dur dhon proCop o y

Tuce oni de Csto2) i 9r0 o ad 1 mayt oim photoren

odetd to epasSdek u a peyShCn 5sti d h drs

re u he Coneiw h C) u h be made

9 T wle cli nun ho meh epok) ovw

raw
 2

CMOS FASRICATIoN
There are number of approaches CMOs FabriCafion, including tne P e l

the n-well, the twin Eub, and the SiliCon- on- In Salaor Prote SS es

The P-Well process I Wrdely uSed tn prachCe, and n-hWell proCeSs ts dso pap ular

The P- Wel protes Ss

The ba Si Proces3ng Steps are of me Same nahure as tnose used for oNas.

In prmiive terms, the struchure Consists of anntype Subshpal n ohich P-dasie

may be formed by Sutak mas kang and deffusion and, in order GCCo mmodar

Subsral
D-pe deviCe s, a
deap P- we is dtPased tno the ntype
must be Carried ou wi Spec Care Since tne P-well doping
This drffuSion well as me breckdosn
Contenkahon and dgth o affe tnethreShold volage s as

VoageS ohe ObransishOYS.

To achieve ower thre chold volages Co:6v o ev) we need e s l e deep

wll diffuston or high well reSisElvi

bromSiS o aud l s
p-5e

Deep wlls requite Lorger G

Deep wll o me m- and
laterd taSi o
Ld thereore a
larqen chp area.
be Cause o

ac as Suhshraeforne -daviCus wihin parent n-Sub Shr, oud,

The P-oells
restrichon are obSerled., the bwo are a aTe
Providedhnd volkage pelary
dedi cal ISolabed
noo I eke tuo Subshrey, two Subse Conne dom DD YSS)
SuaEhere aYe
are feqred
rs pedB masEng nalterning, ond di
paler9, ffuSi on
d1 ffasi on tEhe
he
prr Cess is Simila
all other
-

fn
oMOSfabrscahm
to

the areas tn ohich Ehe deepP- oel d ffuStms

Mask-1 de fines are o
Eake plaa
Mask 2 det neS the thino reasons namey those areas here tme
and thin oxide
thic onde 1s to be shippe) gon to acto mmoda
JtfuSn
f fuhn n di re.
and
and - bram1 r o
 RL

Mosk 3 used to palhern the palysilu con eyer owch 1% depesik fter the thin o

A P-plus mow used to deftne al) areas here

P- dffasion lo ho
Mask-4 mask

bake pla
MaSk-S This io usually per formed using tne neaahive form o ta P- pls
maSk and oi y maSk2 dnes bhse areas where m-ype dffus.

MAsk-6 Contact Cats ore novð defned

MASE-9 The mc ayer patlero is defned by his mSk,
Mae-6 An ovcral) aSSiva hom Covw as s laew mo l an) ms

t e aecess t bondh4 pads.

need dene opening

The N-wel Preces5s

Formation of n-we
l raions
arcas
nMoS and PNS achve
De Hne

and ge oxidaions CEhinox)

Reld

poly SikCon
Form and pattern

Pt diffuSion

di ffusion

Contach
Cats

Deo Sil and pfe mehkzahe

in Cals f r bondiy pmds
oVer gloss
tyetcn-el) pre Ce.S.
hgtMaIn steps tn
 Cuvrent as Ve.sus Voltagr Vas hekHons hips
brain-l0 Sourca

ohale Conúupt of the Mos brans1stov evolves rom the use of a volage
The
Channel between
SouYe oud drain.
on the qaE to induce a
Charge n the
Soura to drain under t Inflaena
Ohich maythen be Causd to move rom
drauin aud Snura
of an
eledic field crealed bvolfage Vas pplied b
Sinle the Chorqe tudutad to dupudut on tne gae to S aura wlge, Vg s

then Tas b dqeudut on bo Vas oud Vds

I a s -Is = charq 1nduced n chonnd (R) D

Eluhon branst time (t)

ne channe (L)
transt tme ts Lengh
Veloca ()

Velocly V Eds
M debon or hle mobiuy (surfaa )
Fds dsric fidd ( drain to SouYG)

Fs Vas

V Vds
L
6s0 Cm y sec
at omm femp.
240 Cm/v sec
Vas
A
The Non sokurated reqron

Induced In ehanne due to goa volkage lo due to the Voltage differ eua
Charge
(assuming Subsa Conneched o SirG
and choanne) Vgs
blo ga drsFute x
alon9
me Canna
Varies untany wi
the Volkuge assume
Alato,
the channe)
c hanhe and assu ming ht the devia ts nst
ER tn he
droe
due h me
Srura
rale s Yds
Saturated then the a v erage

Ve
The effedhve ga olage Vgs-Ygs
charge unit
Eg Eins E arca

Induled Charge e E g i n s Eo WL
 E avg dedsefey 3le to chonnd
9ae aud Channd
ns elaH ve permi tivi op tosulehon
Eo Permittw f ree spola
Eo 8 6S xIDlem o r Si02&as40

E 9s-V)-V
D
Oxide thkne ss

e WLEins EVs-Ve) - Vas 0

D

y in O

Eo (Vgs-Ve)-Vas
Tds wy Eins
D

L
uVas

(-Ve)-vas Vas
EnsDEo
10 the non sahuratd Teq o
Ys-Vt) Vas Vas Oncre Vas < Vgs-VE
s=k.

K=ansEy
D b ommon precia
e ge-omehy
ad
t
The factor 18 Coni bared y
ornle

s=Ps-v)

galechanel opda
WL
Eins o
C9
D

k C
WL

ds-G a-VE)Vds- Vd

Co tWL

C
 The Sahuraed reyion

Sina at
tn1s point IR do? tn me che nd taad
when Vas Vgs-v,
Saturatlon begtns assume beb e amo

b channel volage at he draln and ue

may
the effedive gale

remains Cons -omt s Vas tncr case furne

IasK gs-VE)

Tds (Yss-Ve)
OY

Tas C (Vas-VE
2 1

dsCoD N (Vgs-VE)
2
aud depe hon ma
The epressions derived for FJs hola For both euhaunlaumen
devices but tt shuld be nded tnat the VE mMos depl.h rede devia ty neshve

TsRes
TsResss Vg5 0:3VoD
Vas-o-VD
Is s a h ) dsSs-V
Sehurahon s >vgs-Ve)
Vgse oS Vo
V9s O

V 9 S oVDD
V9seV
Y9S o:2 pp
VGS-0:3Vpy

0-SOD YDD
mode deuina
1
bEnhounGement
Deplehen mode devia
Ngs7
AS PECTS OF Mos Transistor Threshold velloge VE
n E
srorco
Consists of charges
he gale strucure of a Mos trans1stor In the
as well
Inerfaces
dieledic yayers and In tne Surbace to Surfaa
Substral t selb to the o s
transistor from the off and
Mos
Swttching an enhanCement mode to neutra lge
thse chargs
qee volage Jehc fidd
ConsislA
1 applying sufficiant
Cnversfon due to the
a
underge
enable the underlying siiCon to
Consisg
from the gale to tne oft Stale
mM8s
transistor from on
and
mode
Suottthing a depleion
to add to tne Stored Charge
qote the
to opplytng9 enoughltage to
o

InVert the mplant regton to.

threshold Volage VE 9s52N

Pms o-Co
The
oxide
benealh the
unit area In tne dplethon ayer
t h e chatge Per
Si: sio2 Interface
den Sty at
Chare

Capaaane per unit

gae area

Co gole and
si
differana blo
Nank bunchion and bulk st
Pms inverted surlata
Fermi leve poteubioð b/o
PEN
oud st subsrak.
-ve audnealeejde tor pay
silicom gak
Ehe remany
Pms detemined by
the bas a b/s
are
nd sgn of Ve o h i c h are tVe
nagni tude
magnibude
oher two tums,
bofi

-Ve term-ss and the

Co
Ceulomsm
+%s)
Pe=2 E Est yN (20N

KTn N yolt

to Ceulomb
Crmlomb,

Qss s hs)x
fw mM0, te fw fNas)
SubShralz bias Voltage (-ve
Vse
1n the Substrai
N Ipudly ConCeuwahon
Est-ndaHve Permihuiy of Siuan117
to ot 3o0 )
C16 xjoCm
ConCentva bay
7omnsic ededon 3
Gonsteant = 14 xio Jodel
6olt3man's
The body ehed ma abo be EakeM tho actount Stnce tne SubS}rde may be biased
r.t SourCe.
IncreaSting Vse CAMS) bne channd to be depdeted of charge Cavricrp aud tus

the threshold Volge ls ralsed.

AV9(V)»
Cansant, depndh n SubShroJe deping So mat tne more ightly doped
subshe, tne Smaller ill behe body etked

Velo)4D)2¬,
Etns Eo
Ei qN.(Vse)
Ve Co) threshold vottae tor Vseo

For n Mos en hamla memt mode tron stsFos

VSB OV VE02Vpp -Ve Vduo br PMa

Vsg SV, VE O:3Vpp
ran$t3o
FY mHos deplehon meda
VsB OV Vtd-o.7 pD
VsB SV VE o 6 Vp
Mos Tans1s o r Trans Conducana 9m
ond ole Conducana 9ds.

Im S Tas
SVas
s =Const

Gc
Ts

Tas
Vas

SlasSQ Vas
 STas &Vge Vas
L
mSTaS CgVas
S Ngs
Vas-Vgs-V

9m CgM CVgsVe)
L

Eins Eo WL

D
(Vqs-V)
9m Eins Eo
D

oid9.
o s devite y Incre
aSing tts
tne 9m of
pessile to
IncYease
it 8 and area oCupied
Increase the e apattana
il1 adso
Thio
an increae w Owihg to he
n
A reduckon tn the channd ets n Sults

higher m
Conduthua Jas Ca be enprne by
The ol
oe

ds
Tur)
SVgs fa demonshnas
te Channe) leng
shoug depudeuta
on
Here the

do
Mos TvanSishoY gute of Meri

Coo Cgs-Ve Tsa

THE PASS TRANs|sToR

VDp-VE
X- A-B.c (Lonc4
?.
 THE CMOS nverler

Vou
-VoD Cure'
!4fs!
Pon
n Poff
Vout
b non
on

Vss
OO

Ias = K(Mge-Ve)Vas -Y
nsetive rgio
SaturaH0
ask. Mgs-Ve)

k is techns og- depoudat parameYr

P
In Saturah
ds Ugs -Ve)
Eins Eo Mo n
L

Ensto NL
Pr D
ooperaHons
CMOS ay has 5 dstinc rAIons
-banssh
tvansistovully
Eurned on tohile the
Vin lglco >
IhV aud tme lp la
regiom Noument los through
Fully Eurned off. A goodlo c
the P-bransistov.
+to Vop though
divediy Conneced
divedly t ot heof
Aneof
Volage is thus prejent wle
wWe PPbank
P bomk
Eurned
Sishor-flly

egton5 Vrn:logic 4,
n-tran Jnv yrndonje
uod o
tuned f. NoCurreul tmtg h
faly
ptar) at he of
 a levd just enaedn VEnVen wkch
on
on 22 the Ve Velrge has incrcased
Soura Oud drin,
byomneov Cond uc8 and has lage Vol}uge b/
the n bu
bat wih
wim onl
nl
Sahurafon The PbwneusFov ls dhe Cond uchng
sett ts tn sahy atd resehe
attvos f & t pernt in the un
a Small volaae

Pn bem %iro
ale Yolosd
2 bu olh rol
Reg ion 4 Simlr regtn
Sahrhn,
bonsshns are th
nv onhibi gain ad oth
on33
Regan
Tase-Tas
Tas (Yn-Ypp)V)

Tdsn (Yin-Yen)

Nn
Vop+ Yey+Yp(e
+Pe)Y
° Ven-tp, he
in 0S Vpp

Thl Implie^ tnat he Chanss ovLr t opc Jevdo i Sy mmch aly

d
dis pose about t e pin a o

Vin Vou a's Vpy

For hPr

Lo

d 2 s Ln

(V9s-ME)
M- Mz (1-ø

bwov e ehield.
o-05
ai th Zao
ma
The basic Anverter Circust Yequires a transistor oit SaurCe Conneed fo gwund
and a Dead resyshor Some Sot Canneded from be drauin to the 4ve
The o/p i tatem From
ne drain aud the Yp opplied
Supply YaR Vop
bJw gale ad grnund.
Con Vvin ieutly produd on the StiCon Sustroe, evey
Re Sistors are not
So that Some ol5er fon
modest
modestVaJues
oCCPy eaCeSSivey large areas

Load resistanCe 18 requred A Convinient woy sdve Eus prd

toue depletion mode EronSistov bhe load.

Curent dracon rom the olo, the Gurvens r s f bo EronATA

We mo

must be eqa)
For bhe deplebm mode Eromsishor, bre gale 1 ConnectedtSr So Uo
aldays on ad o he halactuikiz Cure is ndevant
.

Vaso
duletioo mode bromSi goY 1 CalledPall-up (Pu) aud euhawma mas made

devile the pull- duon (Pd) Eransis tor

te
mod charadenite Cur CVgg- ov) is Super impaled or
The depetion du Inverl
te cahuula mut mode dail o obhain
family Curves o
trange Characteri gt1
to Ho. Theo/e
ex ledy tne ellage Curemt besino
p. d threShdtd
As Vin Couse
Inceeases in Yin
decreases and me Sub Sequent
Vol Vour thu and beCome resisti
he
to Come ou y saturation
he P.d transi s FoY resistie a t h e P.d terns on.
tmt Pu tranSistor 1 Unbially
Nole
Gaun&Veu
il) be
danoEd a Vinv and t
udh Vet Vin o
The Print at aud Cauy be
Vinv Cabe Shifd by
Shytd
Charatiabio
moted
moted tha the bansjer
oPo Pd reGtann,
Vhiation heraio