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Lecture.7electronic Circuits 2

The document discusses MOSFETs including their basic structure and operation. It describes depletion MOSFETs and how applying different gate voltages affects the channel and resulting drain current. Examples are provided to illustrate the transfer characteristics and determining pinch-off points for n-channel depletion MOSFETs.

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17 views

Lecture.7electronic Circuits 2

The document discusses MOSFETs including their basic structure and operation. It describes depletion MOSFETs and how applying different gate voltages affects the channel and resulting drain current. Examples are provided to illustrate the transfer characteristics and determining pinch-off points for n-channel depletion MOSFETs.

Uploaded by

eafc2444
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronic Circuits 2

Lecture 07
MOSFET

Dr. Ibrahim Salah Ibrahim


Control and Computer Eng. Dept.
Faculty of Engineering Almaaqal University

References [Razavi, 2013] ,[Thomas


Floyed,2018]and [Electronic Devices and Circuit
Theory Robert L. Eleventh Edition]
The Metal-Oxide Semiconductor FET (MOSFET)
The MOSFET (metal-oxide semiconductor field-effect
transistor) is the second category of field-effect transistor.
A MOSFET differs from a JFET in that a MOSFET has no
pn junction structure; instead, the gate of the MOSFET is
insulated from the channel by a silicon dioxide(SiO2) layer.
The two basic types of MOSFETs are depletion (D) and
enhancement (E)
Depletion MOSFET (D-MOSFET)
One type of MOSFET is the depletion MOSFET (D-MOSFET),
and Figure below illustrates its basic structure. The drain and
source are diffused into the substrate material and then
connected by a narrow channel adjacent to the insulated gate.

There is no direct electrical connection between the gate terminal and the
channel of a MOSFET.
The graphic symbols for an n- and p-channel depletion-type
MOSFET are provided in Fig. a and Fig b.

The main applications of MOSFET


1.High power applications
2. commonly used in digital and the analog circuits
3. Radio frequency applications
basic Operation and Characteristics
In Fig. 25 the gate-to-source voltage is set to 0 V by the direct
connection from one terminal to the other, and a voltage VDD is
applied across the drain-to-source terminals. The result is an attraction
of the free electrons of the n-channel for the positive voltage at the
drain. The result is a current similar to that flowing in the channel of
the JFET. In fact, the resulting current with VGS 5 0 V continues to be
labeled IDSS, as shown in Fig. 26.
basic Operation and Characteristics
In Fig. 27, VGS is set at a negative voltage such as -1 V. The negative
potential at the gate will tend to pressure electrons toward the p-type
substrate (like charges repel) and attract holes from the p-type
substrate (opposite charges attract) as shown in Fig. 27. Depending on
the magnitude of the negative bias established by VGS, a level of
recombination between electrons and holes will occur that will reduce
the number of free electrons in the n-channel available for conduction.
basic Operation and Characteristics
The more negative the bias, the higher is the rate
of recombination. The resulting level of drain
current is therefore reduced with increasing
negative bias for VGS, as shown in Fig. 26 for VGS
= -1 V, -2 V, and so on, to the pinch-off level of -6
V. The resulting levels of drain current and the
plotting of the transfer curve proceed exactly as
described for the JFET. For positive values of
VGS, the positive gate will draw additional
electrons (free carriers) from the p-type substrate
due to the reverse leakage current and establish
new carriers through the collisions resulting
between accelerating particles.
Example.1
Sketch the transfer characteristics for an n-
channel depletion-type MOSFET with IDSS
= 10 mA and VP = -4 V.
Example .2
For the n-channel depletion-type MOSFET of Fig. 30, determine:
a. IDQ and VGSQ.
b. b. VDS.
H.W
Repeat Example.2 with RS = 150 V.
Thank you for your
attention

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