Chapter-5(BEE)

MCQ on Transistors

1. What does BJT stand for in electronics?

 a) Biased Junction Transistor
 b) Bipolar Junction Transistor
 c) Base Junction Transistor
 d) Balanced Junction Transistor
 Answer: b) Bipolar Junction Transistor

2. What are the three layers of a BJT?

 a) Collector, Base, Emitter
 b) Anode, Cathode, Gate
 c) Source, Drain, Gate
 d) Emitter, Collector, Gate
 Answer: a) Collector, Base, Emitter

3. What is the majority charge carrier in the emitter region of a BJT?

 a) Holes
 b) Electrons
 c) Ions
 d) Neutrons
 Answer: b) Electrons

4. In a PNP transistor, what type of charge carriers are majority carriers in the base region?
 a) Electrons
 b) Holes
 c) Neutrons
 d) Ions
 Answer: b) Holes

5. What is the function of the base region in a BJT?

 a) To provide mechanical support
 b) To control the flow of current between the collector and emitter
 c) To dissipate heat
 d) To provide electrical insulation
 Answer: b) To control the flow of current between the collector and emitter

6. What is the function of the collector region in a BJT?

 a) To emit charge carriers
 b) To control the flow of current between the base and emitter
 c) To collect charge carriers emitted by the emitter
 d) To provide electrical insulation

Any Doubt Contact: Khan Adil Parvez Page 1

  Answer: c) To collect charge carriers emitted by the emitter

7. What are the two main types of BJT?

 a) NPN and ZPN
 b) PNP and NNP
 c) NPN and PNP
 d) PNP and ZNP
 Answer: c) NPN and PNP

8. In which configuration does the emitter-base junction of a BJT remain forward biased while the
collector-base junction remains reverse biased?
 a) Common emitter
 b) Common base
 c) Common collector
 d) None of the above
 Answer: b) Common base

9. What is the current gain of a BJT?

 a) The ratio of collector current to base current
 b) The ratio of emitter current to base current
 c) The ratio of collector current to emitter current
 d) The ratio of base current to collector current
 Answer: c) The ratio of collector current to emitter current

10. What is the primary function of the base region in a BJT?

 a) To emit charge carriers
 b) To control the flow of current between the collector and emitter
 c) To collect charge carriers emitted by the emitter
 d) To provide electrical insulation
 Answer: b) To control the flow of current between the collector and emitter

11. Which BJT configuration provides high voltage gain and input impedance but low output
impedance?
 a) Common emitter
 b) Common base
 c) Common collector
 d) Emitter follower
 Answer: a) Common emitter

12. Which type of BJT configuration has the emitter terminal grounded?
 a) Common emitter
 b) Common base
 c) Common collector

Any Doubt Contact: Khan Adil Parvez Page 2

  d) Emitter follower
 Answer: c) Common collector

13. What happens to the collector current of a BJT when the base-emitter junction is forward
biased?
 a) Collector current decreases
 b) Collector current increases
 c) Collector current remains constant
 d) Collector current becomes zero
 Answer: b) Collector current increases

14. What is the typical voltage drop across the base-emitter junction of a silicon BJT in forward bias?
 a) 0.1 to 0.2 volts
 b) 0.6 to 0.7 volts
 c) 1.2 to 1.3 volts
 d) 2.0 to 2.1 volts
 Answer: b) 0.6 to 0.7 volts

15. Which type of BJT configuration has the collector terminal grounded?
 a) Common emitter
 b) Common base
 c) Common collector
 d) Emitter follower
 Answer: b) Common base

16. What is the primary function of the emitter terminal in a BJT?

 a) To emit charge carriers
 b) To control the flow of current between the base and collector
 c) To collect charge carriers emitted by the collector
 d) To provide electrical insulation
 Answer: a) To emit charge carriers

17. Which of the following is NOT a type of BJT?

 a) NPN
 b) PNP
 c) JFET
 d) MOSFET
 Answer: d) MOSFET

18. Which BJT configuration offers the highest current gain?

 a) Common emitter
 b) Common base

Any Doubt Contact: Khan Adil Parvez Page 3

  c) Common collector
 d) Emitter follower
 Answer: a) Common emitter

19. Which layer of a BJT is lightly doped and very thin?

 a) Collector
 b) Base
 c) Emitter
 d) Substrate
 Answer: b) Base

20. Which terminal of a BJT is heavily doped?

 a) Collector
 b) Base
 c) Emitter
 d) Substrate
 Answer: c) Emitter

21. In a PNP transistor, the majority charge carriers in the base region are:
 a) Electrons
 b) Holes
 c) Ions
 d) Neutrons
 Answer: b) Holes

22. What is the primary function of the base region in a BJT?

 a) To collect charge carriers emitted by the emitter
 b) To emit charge carriers
 c) To control the flow of current between the collector and emitter
 d) To provide electrical insulation
 Answer: c) To control the flow of current between the collector and emitter

23. Which terminal of a BJT is connected to the N-type material?

 a) Collector
 b) Base
 c) Emitter
 d) Substrate
 Answer: c) Emitter

24. The collector-base junction of a BJT is:

 a) Heavily doped

Any Doubt Contact: Khan Adil Parvez Page 4

  b) Lightly doped
 c) Moderately doped
 d) Not doped
 Answer: b) Lightly doped

25. The emitter-base junction of a BJT is:

 a) Heavily doped
 b) Lightly doped
 c) Moderately doped
 d) Not doped
 Answer: a) Heavily doped

26. Which of the following describes the construction of a Bipolar Junction Transistor?
 a) It consists of a single layer of semiconductor material.
 b) It consists of two layers of semiconductor material.
 c) It consists of three layers of semiconductor material.
 d) It consists of four layers of semiconductor material.
 Answer: c) It consists of three layers of semiconductor material.

27. What is alpha (α) in the context of a transistor?

 a) Alpha is the ratio of collector current to base current (IC/IB).
 b) Alpha is the ratio of emitter current to collector current (IE/IC).
 c) Alpha is the ratio of collector current to emitter current (IC/IE).
 d) Alpha is the ratio of base current to collector current (IB/IC).
 Answer: c) Alpha is the ratio of collector current to emitter current (IC/IE).

28. In a common emitter configuration, what does alpha represent?

 a) Voltage gain (Av)
 b) Current gain (Ai)
 c) Power gain (Ap)
 d) Transconductance (gm)
 Answer: b) Current gain (Ai)

29. What is beta (β) commonly known as in the context of a transistor?

 a) Emitter Efficiency
 b) Base Efficiency
 c) Collector Efficiency
 d) Current Gain
 Answer: d) Current Gain

Any Doubt Contact: Khan Adil Parvez Page 5

30. How is beta (β) calculated in a transistor?
 a) β = IC / IE
 b) β = IC / IB
 c) β = IE / IC
 d) β = IB / IC
 Answer: b) β = IC / IB

31. Which of the following expressions represents the relationship between alpha (α) and beta (β) in
a transistor?
 a) β = α / (1 - α)
 b) α = β / (1 + β)
 c) α = β / (1 - β)
 d) β = α / (1 + α)
 Answer: d) β = α / (1 + α)

32. How does a transistor operate when used as a switch in digital circuits?
 a) In the active region
 b) In the saturation region
 c) In the cutoff region
 d) In the linear region
 Answer: b) In the saturation region

33. In a transistor switch, when the base-emitter junction is forward biased, what state is the
transistor in?
 a) ON state
 b) OFF state
 c) Saturation state
 d) Cutoff state
 Answer: a) ON state

34. What happens to the collector-emitter junction of a transistor switch when the base-emitter
junction is forward biased?
 a) It becomes reverse biased.
 b) It becomes forward biased.
 c) It remains unbiased.
 d) It becomes open-circuited.
 Answer: b) It becomes forward biased.

35. In a transistor switch, when the base-emitter junction is reverse biased, what state is the
transistor in?

Any Doubt Contact: Khan Adil Parvez Page 6

  a) ON state
 b) OFF state
 c) Saturation state
 d) Cutoff state
 Answer: d) Cutoff state

36. What is the primary purpose of a transistor switch in electronic circuits?

 a) To amplify signals
 b) To regulate voltage
 c) To act as a digital switch
 d) To generate oscillations
 Answer: c) To act as a digital switch
37. In a common-emitter transistor switch configuration, what determines the ON or OFF state of
the transistor?
 a) The collector current
 b) The base-emitter voltage
 c) The emitter current
 d) The collector-emitter voltage
 Answer: b) The base-emitter voltage

38. Which region of operation of a transistor switch corresponds to a low collector-emitter voltage
and high collector current?
 a) Saturation region
 b) Cutoff region
 c) Active region
 d) Linear region
 Answer: a) Saturation region

39. In which region of operation does a transistor switch exhibit minimal collector current and high
collector-emitter voltage?
 a) Saturation region
 b) Cutoff region
 c) Active region
 d) Linear region
 Answer: b) Cutoff region

40. In a Common Base (CB) configuration, which terminal is common between input and output?
 a) Base
 b) Collector
 c) Emitter
 d) None of the above
 Answer: a) Base

Any Doubt Contact: Khan Adil Parvez Page 7

41. What is the primary advantage of the Common Base (CB) configuration?
 a) High input impedance
 b) High voltage gain
 c) High power gain
 d) High output impedance
 Answer: a) High input impedance

42. In the CB configuration, where is the input signal applied?

 a) Base
 b) Collector
 c) Emitter
 d) Both Base and Emitter
 Answer: c) Emitter

43. What is the typical range of voltage gain in a CB configuration?

 a) Greater than 100
 b) Around 1
 c) Less than 1
 d) Approximately 50
 Answer: c) Less than 1

44. What is the main drawback of the CB configuration?

 a) Low voltage gain
 b) Low power gain
 c) Low input impedance
 d) Low current gain
 Answer: a) Low voltage gain

45. Which of the following parameters characterizes the current gain of a transistor in CB
configuration?
 a) β
 b) α
 c) γ
 d) δ
 Answer: b) α

46. In a CB configuration, what is the relationship between input and output currents?
 a) Input and output currents are equal
 b) Input current is greater than output current
 c) Output current is greater than input current
 d) There is no fixed relationship between input and output currents
 Answer: c) Output current is greater than input current

Any Doubt Contact: Khan Adil Parvez Page 8

47. In a Common Emitter (CE) configuration, where is the input signal applied?
 a) Base
 b) Collector
 c) Emitter
 d) Both Base and Emitter
 Answer: a) Base

48. Which of the following statements about the CE configuration is true?

 a) It has a low voltage gain
 b) It provides a phase reversal between input and output signals
 c) It has a high input impedance
 d) It exhibits a low output impedance
 Answer: b) It provides a phase reversal between input and output signals

49. What is the primary advantage of the Common Emitter (CE) configuration?
 a) High input impedance
 b) High voltage gain
 c) High power gain
 d) High output impedance
 Answer: b) High voltage gain

50. In the CE configuration, what is the relationship between input and output currents?
 a) Input and output currents are equal
 b) Input current is greater than output current
 c) Output current is greater than input current
 d) There is no fixed relationship between input and output currents
 Answer: c) Output current is greater than input current

51. What is the typical range of voltage gain in a CE configuration?

 a) Greater than 100
 b) Around 1
 c) Less than 1
 d) Approximately 50
 Answer: a) Greater than 100

52. What is the main drawback of the CE configuration?

 a) Low voltage gain
 b) Low power gain
 c) Low input impedance
 d) Low current gain
 Answer: c) Low input impedance

Any Doubt Contact: Khan Adil Parvez Page 9

53. Which of the following parameters characterizes the current gain of a transistor in CE
configuration?
 a) β
 b) α
 c) γ
 d) δ
 Answer: a) β

54. In a CE configuration, what is the relationship between input and output voltages?
 a) Input and output voltages are equal
 b) Input voltage is greater than output voltage
 c) Output voltage is greater than input voltage
 d) There is no fixed relationship between input and output voltages
 Answer: c) Output voltage is greater than input voltage

55. What does JFET stand for?

 a) Junction-Free Electron Transistor
 b) Junction Field-Effect Transistor
 c) Junction-Friendly Electron Transistor
 d) Jointly-Fabricated Electron Transistor
 Answer: b) Junction Field-Effect Transistor

56. JFETs are primarily used as:

 a) Voltage regulators
 b) Power amplifiers
 c) Current mirrors
 d) Switching devices
 Answer: d) Switching devices

57. In a JFET, the control of output current is achieved by:

 a) Varying the base current
 b) Varying the gate-source voltage
 c) Varying the collector-emitter voltage
 d) Varying the drain-source voltage
 Answer: b) Varying the gate-source voltage

58. What are the two main types of JFETs?

 a) PNP and NPN
 b) P-Channel and N-Channel
 c) Bipolar and Unipolar
 d) Common Emitter and Common Collector

Any Doubt Contact: Khan Adil Parvez Page 10

  Answer: b) P-Channel and N-Channel

59. In a JFET, which terminal controls the flow of current between the source and drain?
 a) Source
 b) Drain
 c) Gate
 d) Body
 Answer: c) Gate

60. Which region of operation of a JFET is analogous to the saturation region of a bipolar transistor?
 a) Cut-off
 b) Pinch-off
 c) Triode
 d) Inversion
 Answer: b) Pinch-off

61. The pinch-off voltage in a JFET is the voltage at which:

 a) The gate-source junction is reverse biased
 b) The gate-source junction is forward biased
 c) The drain current reaches its maximum value
 d) The drain-source voltage becomes zero
 Answer: a) The gate-source junction is reverse biased

62. What is the typical input impedance of a JFET?

 a) Low
 b) Moderate
 c) High
 d) It depends on the biasing conditions
 Answer: c) High

63. What type of biasing is required for a JFET to operate in its active region?
 a) Forward biasing
 b) Reverse biasing
 c) No biasing is required
 d) Biasing depends on the type of JFET
 Answer: b) Reverse biasing

64. In which region does a JFET act as a voltage-controlled resistor?

 a) Cut-off
 b) Saturation

Any Doubt Contact: Khan Adil Parvez Page 11

  c) Linear or Ohmic
 d) Inversion
 Answer: c) Linear or Ohmic

65. What is the relationship between the gate-source voltage (VGS) and the drain-source voltage
(VDS) in the saturation region of a JFET?
 a) VGS < VDS
 b) VGS = VDS
 c) VGS > VDS
 d) There is no specific relationship between VGS and VDS
 Answer: a) VGS < VDS

66. Which of the following materials are commonly used for JFET construction?
 a) Silicon (Si)
 b) Germanium (Ge)
 c) Gallium Arsenide (GaAs)
 d) All of the above
 Answer: d) All of the above

67. The drain-source resistance of a JFET in its linear region is primarily determined by:
 a) The gate-source voltage (VGS)
 b) The drain current (ID)
 c) The pinch-off voltage (VP)
 d) The substrate bias voltage
 Answer: a) The gate-source voltage (VGS)

Any Doubt Contact: Khan Adil Parvez Page 12

 Statement along with Answer
Roll No: ____________________________________ Class: ____________

SR.No Statement
1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.

12.

13.

14.

15.

Any Doubt Contact: Khan Adil Parvez Page 13

 16.

17.

18.

19.

20.

21.

22.

23.

24.

25.

26.

27.

28.

29.

30.

31.

32.

Any Doubt Contact: Khan Adil Parvez Page 14

 33.

34.

35.

36.

37.

38.

39.

40.

41.

42.

43.

44.

45.

46.

47.

48.

49.

Any Doubt Contact: Khan Adil Parvez Page 15

 50.

51.

52.

53.

54.

55.

56.

57.

58.

59.

60.

61.

62.

63.

64.

65.

66.

Any Doubt Contact: Khan Adil Parvez Page 16

 67.

Signature Grade

Any Doubt Contact: Khan Adil Parvez Page 17