A ll data sheet.

com

DO3N10
Description：
This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

D
It can be used in a wide variety of applications.

G
S
Features：
1) VDS=100V,ID=2.8A,RDS(ON)<310mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol Parameter Ratings Units

VDS Drain-Source Voltage 100 V

VGS Gate-Source Voltage ±20 V

ID Continuous Drain Current- T A=25℃

1
2.8
A
IDM Pulsed Drain Current2 5
3
PD Power Dissipation 1 W

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃

Thermal Characteristics：
Symbol Parameter Max Units

RƟJC Thermal Resistance,Junction to Case 1 80 ℃/W

RƟJA Thermal Resistance Junction to mbient1 125 ℃/W

Package Marking and Ordering Information：

Part NO. Marking Package

DO3N10 MA4 SOT-23

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DO3N10
Electrical Characteristics：(TA=25℃ unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V

IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA

IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA

On Characteristics

VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 2.5 V

VGS=10V,ID=1A --- 260 310

RDS(ON) Drain-Source On Resistance mΩ
VGS=4.5V,ID=0.5A --- 270 320

GFS Forward Transconductance VDS =5V, ID=1A --- 2.4 --- S

Dynamic Characteristics

Ciss Input Capacitance --- 508 711

VDS=15V, VGS=0V, f=1MHz
29 41
Coss Output Capacitance --- pF

Crss Reverse Transfer Capacitance --- 16.4 23

Qg Gate Charge VDS=80V , V GS =10V , --- 9.7 13.6

1.6 2.2
Qgs Gate-Source Charge ID=1A --- nc

Qgd Gate-Drain Charge --- 1.7 2.4

VGS=0V, VDS=0V, F=1MHz

rg Gate Resistance --- 2.8 5.6 Ω

Switching Characteristics

td(on) Turn-On Delay Time --- 1.6 3.2 ns

VDD=50V , V GS=10V ,
tr Rise Time RG=3.3 --- 19 34 ns
ID=1A
td(off) Turn-Off Delay Time --- 13.6 27 ns

tf Fall Time --- 19 38 ns

Drain-Source Diode Characteristics

VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- --- 1.2 V

IS Continuous Source Current --- --- 1.2 A

VG=VD =0V,Force Current
Pulsed Source Current 5
ISM --- --- A

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DO3N10
Trr Reverse Recovery Time IS=1 A, --- 14 --- NS
di/dt=100 A/μs
Qrr Reverse Recovery Charge --- 9.3 --- NC

Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Typical Characteristics
5.0 265
ID=1A

4.0
260
ID Drain Current (A)

RDSON (mΩ)
3.0
VGS=10V 255
VGS=7V
2.0
VGS=5V
VGS=4.5V 250
1.0
VGS=3V

0.0 245
0 0.5 1 1.5 2 2.5 2 4 6 8 10
VDS , Drain-to-Source Voltage (V) VGS (V)

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

Voltage
2

1.6
IS Source Current(A)

1.2

0.8

TJ=150℃ TJ=25℃
0.4

0
0 0.3 0.6 0.9
VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

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DO3N10
diode
1.8 2.4

Normalized On Resistance
2.0
1.4
Normalized VGS(th)

1.6

1
1.2

0.6
0.8

0.2 0.4
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

1000 100.00
F=1.0MHz

Ciss 10.00
Capacitance (pF)

100us
1.00
10ms
ID (A)

100
100ms
0.10
1s
Coss
0.01 DC
Crss TA=25℃
Single Pulse
10
0.00
1 5 9 13 17 21 25
0.1 1 10 100 1000
VDS Drain to Source Voltage (V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
DUTY=0.5
Normalized Thermal Response (R θJA)

0.2
0.1 0.1
0.05

0.02
0.01 0.01

PDM
TON
0.001 SINGLE PULSE T
D = TON/T
TJpeak = TA + PDM x RθJA

0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

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