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Silicon PNP Power Transistors: 2SA1006 2SA1006A 2SA1006B

This document provides specifications for the SavantIC Semiconductor silicon PNP power transistors models 2SA1006, 2SA1006A, and 2SA1006B. It details their applications in audio and high frequency power amplification, absolute maximum ratings, characteristics, package outline, and classifications.

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Michael Ramos
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41 views5 pages

Silicon PNP Power Transistors: 2SA1006 2SA1006A 2SA1006B

This document provides specifications for the SavantIC Semiconductor silicon PNP power transistors models 2SA1006, 2SA1006A, and 2SA1006B. It details their applications in audio and high frequency power amplification, absolute maximum ratings, characteristics, package outline, and classifications.

Uploaded by

Michael Ramos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA1006 2SA1006A 2SA1006B

DESCRIPTION ·

·With TO-220 package


·Complement to type 2SC2336,
2SC2336A,2SC2336B

APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier

PINNING

PIN DESCRIPTION

1 Emitter
Collector;connected to
2 Fig.1 simplified outline (TO-220) and symbol
mounting base
3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1006 -180

VCBO 2SA1006A Open emitter -200 V


Collector-base voltage
2SA1006B -250

2SA1006 -180

VCEO 2SA1006A Open base -200 V


Collector-emitter voltage
2SA1006B -250

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -1.5 A

ICM Collector current-Peak -3.0 A

Ta=25 1.5
PT Total power dissipation W
TC=25 25

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA1006 2SA1006A 2SA1006B

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 V

VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V

ICBO Collector cut-off current VCB=-150V ;IE=0 -1 µA

IEBO Emitter cut-off current VEB=-3V; IC=0 -1 µA

hFE-1 DC current gain IC=-5mA ; VCE=-5V 30

hFE-2 DC current gain IC=-150mA ; VCE=-5V 60 320

Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 45 pF

fT Transition frequency IC=-100mA ; VCE=10V 80 MHz

hFE-2 Classifications

R Q P

60-120 100-200 160-320

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA1006 2SA1006A 2SA1006B

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA1006 2SA1006A 2SA1006B

4
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SA1006 2SA1006A 2SA1006B

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