Chapter 1-Introduction of TEM
Chapter 1-Introduction of TEM
Chapter 1
Introduction of TEM
• History of EM
• Applications
• Limitations
1 m TEM HR-TEM 50 nm
(Lattice Image)
SEM STEM
HR: high resolution, STEM: Scanning Transmission Electron Microscopy, ADF: Annular Dark Field
Shift
A
B
GaN Nanorod A
B
Stacking
TEM Perfect A Fault
B
Crystal C
B
C
B
Distortion HR: high resolution, STEM: Scanning Transmission Electron Microscopy, ADF: Annular Dark Field
0.61
=
:
:
:
: of lens
Joseph J. Thomson
The Nobel Prize in Physics 1906
Louis de Broglie
The Nobel Prize in Physics 1929
1.22 : ( )
= = : :
(2 ) e: charge
V: accelarating voltage (V)
E: energy eV
1950s 1970
1927 The Observation Development
Davisson-Germer of Dislocations in of STEM
1897 Experiment Stainless Steel -A. Crewe
Requirements:
1. Double-tilting holder
2. EDS or EELS
Evaporator
Pre-chamber
CCD Camera
S. C. Wang et al., Nano Lett. 14, 3241-3246 (2014)
• Current Injection
EELS
w/ Cs correction
Specimen
Name: JEM-ARM200FTH
Accelerate Voltage: 80/200 kV
Electron Source: Cold type Field Emission Gun
(CFEG) with EDS detector (Oxford X-Max) and
CEOS aberration corrector(CESCOR)
• Without Cs corrector
- d is 0.2-0.3 nm (depending on the
accelerate voltage) (cross-over point !)
• With Cs corrector - d is 0.06-0.08 nm
EDS: Energy Dispersive Spectroscopy; EELS: Electron Energy Loss Spectroscopy; CL: Cathodoluminescence; DP: Diffraction Pattern; BF: Bright Field; DF: Dark Field
Electrons
Visible Light
Incident
EDS DP
Specimen
Bremsstrahlung
Elastically Scattered
X-ray
Electrons
(Diffracted Electrons)
STEM
Inelastically BF TEM DF TEM
Scattered Electrons
Transmitted
Electrons
EELS
EDS: Energy Dispersive Spectroscopy; EELS: Electron Energy Loss Spectroscopy; CL: Cathodoluminescence; DP: Diffraction Pattern; BF: Bright Field; DF: Dark Field
-- Crystal structure CS
-- Microstructure MS
-- Chemical composition CC
-- Chemical bonding CB
-- Electronic structure ES
2. Easily manipulated
• Electron lenses and deflectors are used to easily change focal
lengths and beam directions , which is a necessary operating
condition for flexible imaging devices.
InGaN
Diffraction Pattern (DP)
GaN
Intensity (a.u. )
7.1 %
7.3 %
0 50 100 150
Distance (nm)
Spectrum
Mapping
(Qualitative Analysis)
@ Department of Materials Science and Engineering, NTHU 34
Compositional Analysis
• Electron Energy Loss Spectroscopy (EELS)
Spectrum
(Qualitative and Quantitative Analysis)
Elemental Mapping
Chemical State Determination
@ Department of Materials Science and Engineering, NTHU 35
Variety of Materials
• Metals
InGaN/GaN
NiGe
AlGaN/GaN
[110] Ge
Graphene MoS2
ZnO NW In
Sample
Know the forest before you start looking into the veins in the
leaves on the trees
Electron Beam
Specimen
Screen
(a) (b)
resolution is worse.
Beam damage in quartz after bombardment with 125 keV electrons. With
increasing time, the bubble-like regions (damaged area) increase in size