Tehrani 2012
Tehrani 2012
Dynamic Parameters
Ali Soltani Tehrani1, Thomas Eriksson1, Christian Fager2
1
Department of Signals and Systems, 2 Department of Microtechnology and Nanoscience,
Chalmers University of Technology, SE-41296, Göteborg, Sweden
Abstract—This paper presents a new radio frequency power and a new modeling equation is proposed. In [7], a circuit-
amplifier behavioral model that is capable of modeling long term based approach was used to construct a new model structure to
memory effects. The proposed model is derived by assuming include long-term memory effects with regards to the thermal
linear dependence of the parameters of a conventional model
to a long term memory parameter, which enables the model to filter of the PA.
better track the signal-induced changes of the power amplifier In all these works, the focus has been on identifying and
electrical behavior. The model is experimentally tested on a 100 W developing model structures that can model long term memory
Doherty power amplifier, with a signal that has a step-like change effects. In this work, we instead focus on deriving a model with
in power, representative of a realistic communication system with parameters that depend on the long term memory effect. This
bursty behavior. Results show that the proposed model is able
to improve the normalized mean squared error performance by enables us to extend most of the commonly derived behavioral
around 2–3 dB. models for PAs to include long term memory estimates with
relatively low complexity.
I. I NTRODUCTION II. M ODEL DESCRIPTION
The main propelling factor in the relatively short history A. Model formulation
of radio frequency power amplifier (PA) behavioral modeling Traditional PA behavioral models - which are linear in terms
has been the need for efficient low complex algorithms that are of parameters - can be written as
able to properly describe PAs for given input signal character-
istics. Communication signals in early generation mobile sys- y = Hx θ, (1)
tems had relatively constant amplitude, which allowed system where y is a vector of the baseband output samples of the
designers to utilize memoryless models. These systems were PA, Hx is a matrix consisting of column vectors of different
mainly designed for voice calls, and power amplifiers would nonlinear and memory of the baseband input signal x, and θ
routinely operate under steady-state temperature conditions. are the model parameters vector. Different behavioral models
As users demand for more services and higher data–rates solely differ in the proposed Hx . Volterra based models
increases, efficient spectral utilization became necessary and like the memory polynomial model [8], generalized memory
envelope varying communication signals have been employed. polynomial model [9] and others [1] belong to this group.
For these type of wideband and high peak to average signals, it In the model we propose here, instead of developing a
is noticed that memory effects in the power amplifier become new Hx we focus on including the long term effects in the
more pronounced. The output of a power amplifier not only parameters of the behavioral model θ. The new behavioral
depends on the current input sample, but on previous samples model can thus be written as
as well [1].
y = Hx θ(s), (2)
In [2] it was noted that there are mainly two categories of
memory effects that degrade communication signals, electrical where θ(s) are the parameters of the behavioral model that
memory effects and electrothermal. The former is attributed to depend on the long term memory estimate s. Intuitively, this
matching effects at the terminal impedances over the input corresponds to an amplifier whose physical parameters may
signal, and the latter to temperature drifts, biasing effects vary with the input signal, due to e.g. self-heating, biasing
and self heating which causes undesired effects on gain effects and etc. Assuming a simple first order dependence
variations and PA behavior [3]. In [4], it was shown that of the parameters with the long term behavior s, the new
for communication signals with wide modulation bandwidth, proposed model can be written as
the electrical short term memory dominated the behavioral
yLT[n] = Hx[n] (θ0 + s[n]θ1 ) , (3)
modeling performance.
As new communications signals and usage pattern emerge, where θ0 are the commonly modeled static parameters of
modeling longer term memory effects are once again gaining the behavioral model (static with respect to the long term
in importance. In [4] and [5], thermal networks are developed memory term), and θ1 are the dynamic parameters. Hx[n] are
to compensate for thermal gain variations. In [6] two tone the columns of any RF behavioral model structure linear with
measurements are used to identify long term memory effects parameters, for example the MP or Volterra models.
NMSE (dB)
−49
M
P
(0) (1) p−1
θp,m + s[n]θp,m x[n − m] |x[n − m]|
x[n] p=1 m=0
ymodel [n] −49.5
−50
0 5000 10000 15000 20000 25000 30000
Window Length N (number of samples)
Fig. 1. Block diagram of the proposed model, with an MP model structure.
NMSE (dB)
order NMSE ACEPR NMSE ACEPR −44
M=4 M=2
P=5 -46.8 -59.9 -49.4 -64.2 −46
M=8 M=4
P=5 -46.9 -59.9 -49.6 -64.4 −48
M=4 M=2
−50
P=7 -47.9 -61.5 -49.7 -64.5
−52
(b) GMP (values in dB). G in all models is 1 0 10 20 30 40
Number of parameters
Nonlinear GMP Proposed model
order NMSE ACEPR NMSE ACEPR
Fig. 4. The accuracy/complexity tradeoff for both models.
M=4 M=2
P=5 -48.4 -62.4 -50.1 -65.6
M=8 M=4
P=5 -48.5 -62.7 -50.2 -65.6 the parameters with respect to a long term memory term like
M=4 M=2 average power, it is possible to accurately track abrupt changes
P=7 -48.8 -62.7 -50.5 -65.9
in input signals, and the modeling accuracy is improved by
around 2.5 dB. The ability of the proposed model to track
signal characteristic changes can be important for linearizing
1 −42
MP algorithms and digital predistortion, and can help lessen the
0.8 GMP load on parameter adaptation algorithms.
0.6 LT−MP −44
0.4 LT−GMP ACKNOWLEDGEMENT
Amplitude of x
|x[n]|
NMSE (dB)
0.2 −46 This research has been carried out in GigaHertz Centre in a
0 joint project financed by the Swedish Governmental Agency
−48 for Innovation Systems (VINNOVA), Chalmers University of
Technology, Ericsson AB, Infineon Technologies Austria AG,
−50 and NXP Semiconductors BV.
R EFERENCES
−52
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