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Data Sheet

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Data Sheet

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© © All Rights Reserved
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INTEGRATED CIRCUITS

DATA SHEET

TDA4867J
Full bridge current driven vertical
deflection booster
Product specification 2004 Jul 22
Supersedes data of 2003 Feb 18
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

FEATURES GENERAL DESCRIPTION


• Fully integrated, few external components The TDA4867J is a power booster for use in colour vertical
• Maximum 2.5 A (p-p) deflection current deflection systems for frame frequencies of 50 to 200 Hz.
The circuit provides a high CMRR current driven
• No additional components in combination with the
differential input. Due to the bridge configuration of the two
deflection controller family TDA485x and SAA4856
output stages DC-coupling of the deflection coil is
• Pre-amplifier with differential high CMRR current mode achieved. In conjunction with the deflection controller
inputs family TDA485x and SAA4856 the ICs offer an extremely
• Low offsets advanced system solution.
• High linear sawtooth signal amplification
• High efficient DC-coupled vertical output bridge circuit
• High deflection frequency up to 200 Hz
• Power supply and flyback supply voltage independent
adjustable to optimize power consumption and flyback
time
• Excellent transition behaviour during flyback
• Guard circuit for screen protection
• Power save mode controlled by input pins
(in combination with SAA4856 only) or guard pin.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT


DC supplies; note 1
VP supply voltage 8.2 − 25 V
VFB flyback supply voltage note 2 VP + 6 − 60 V
Iq(VFB) quiescent flyback current no load; no signal − 2.5 4 mA
Vertical circuit
Idefl(p-p) deflection current on pins OUTB 0.6 − 2.5 A
and OUTA (peak-to-peak value)
Ii(dif) differential input current note 3 − ±500 ±600 µA
Flyback generator
IFB(p-p) maximum current during flyback on − − 2.5 A
pin VFB (peak-to-peak value)
Guard circuit; note 1
VGUARD guard voltage guard on 5.5 6.2 − V

Notes
1. Voltages refer to pin GND.
2. If VFB is between 40 and 60 V a decoupling capacitor CFB = 22 µF (between pin VFB and pin GND) and a resistor
RFB = 100 Ω (between pin VFB and flyback supply voltage) are required (see Fig.6).
3. Differential input current Ii(dif) = IINP − IINN.

2004 Jul 22 2
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

ORDERING INFORMATION

TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA4867J DBS9P plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); SOT523-1
exposed die pad

BLOCK DIAGRAM

handbook, full pagewidth guard output or flyback


power save voltage
mode input

GUARD VP GND VFB


8 3 5 7
TDA4867J
GUARD FLYBACK
CIRCUIT GENERATOR

Idefl
6 OUTA
AMPLIFIER A
INP 1 vertical
Rp
deflection
9 FEEDB coil
INPUT
PROTECTION
STAGE Rref
INN 2 Rm
4 OUTB
from e.g. AMPLIFIER B
TDA485x
or
SAA4856

MGU988

Fig.1 Block diagram.

2004 Jul 22 3
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

PINNING In combination with the SAA4856 the power save mode


can be achieved via the input pins without additional
SYMBOL PIN DESCRIPTION components.
INP 1 non-inverted input
INN 2 inverted input Output stages
VP 3 supply voltage The two output stages are current driven in opposite phase
OUTB 4 output B and operate in combination with the deflection coil in a full
bridge configuration. Therefore, the TDA4867J requires no
GND 5 ground
external coupling capacitor and operates with one supply
OUTA 6 output A voltage (VP) and a separate adjustable flyback supply
VFB 7 flyback supply voltage voltage (VFB) only. The deflection current through the coil
GUARD 8 guard output or power save (Idefl) is measured with the resistor Rm which produces a
mode input voltage drop: Urm ≈ Rm × Idefl. At pin FEEDB a part of Idefl
FEEDB 9 feedback input is fed back to the input stage. The feedback input has a
current input characteristic which holds the differential
voltage between pin FEEDB and pin OUTB on zero.
Therefore the feedback current (IFEEDB) through Rref is:
handbook, halfpage Rm
INP 1 I FEEDB ≈ ---------- × I defl
R ref
INN 2

VP 3 The input stage directly compares the driver currents into


OUTB 4 pins INP and INN with the half of the feedback current
GND 5 TDA4867J
(IFEEDB). Any difference of this comparison leads to a more
or less driver current for the output stages. The relation
OUTA 6
between the deflection current and the differential input
VFB 7
current (Ii(dif) = IINP − IINN) is:
GUARD 8
Rm
FEEDB 9 I i ( dif ) = 2 × I FEEDB ≈ ---------- × I defl × 2 or:
R ref
MGU989
R ref
I defl ≈ I i ( dif ) × -----------------
2 × Rm
Fig.2 Pin configuration.
The deflection current can be adjusted up to ±1.25 A by
varying Rref when Rm is fixed to 1 Ω.
FUNCTIONAL DESCRIPTION
Flyback generator
The TDA4867J consists of a differential input stage, two
output stages, a flyback generator, a protection circuit for The flyback generator supplies the output stage A during
the output stages and a guard circuit. flyback. This makes it possible to optimize power
consumption (supply voltage VP) and flyback time (flyback
Differential input stage voltage VFB) separately. Due to the absence of a
decoupling capacitor the flyback voltage is fully available.
The differential input stage has a high CMRR differential
current mode input (pin INP and pin INN) that results in a In parallel with the deflection yoke and the damping
high electromagnetic immunity and is especially suitable resistor (Rp) an additional capacitor (CSP) and a series
for driver units with differential (e.g. TDA485x or SAA4856) resistor (RSP) have to be used. The flyback time can be
and single-ended current signals. optimized depending on the value of CSP.
The differential input stage delivers the driver signals for
the output stages.

2004 Jul 22 4
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

Protection The internal guard circuit will not be activated, if the input
signals on pins INP and INN delivered from the driver
The output stages are protected against:
circuit are out of range or at short-circuit of the coil
• Thermal overshoot in normal operation (pins OUTB and OUTA).
• Short-circuit of the coil (pins OUTB and OUTA). For this reason an external guard circuit can be applied to
detect failures of the deflection (see Fig.5). This circuit will
Guard circuit be activated when flyback pulses are missing, which is the
The internal guard circuit provides a blanking signal for the indication of any abnormal operation.
CRT. The guard signal is active HIGH: The guard output pin can be used as input for the power
• At thermal overshoot save mode. A current or a voltage has to be applied to the
• During flyback pin. In this case the output stages are switched off
completely.
• When missing flyback supply voltage
• When power supply voltage too low, VP < VP(min).

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages referenced to ground (pin GND);
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VP supply voltage 0 30 V
VFB flyback supply voltage 0 60 V
IFB flyback supply current 0 ±1.8 A
VINP, VINN input voltage 0 5 V
IINP, IINN input current 0 ±5 mA
VOUTB output voltage on pin OUTB 0 VP V
VOUTA output voltage on pin OUTA 0 VFB V
IOUTB, IOUTA output current note 1 0 ±1.6 A
VFEEDB feedback voltage 0 VP V
IFEEDB feedback current 0 ±5 mA
VGUARD guard voltage 0 10 V
IGUARD guard current 0 ±5 mA
Tstg storage temperature −20 +150 °C
Tamb ambient temperature −20 +75 °C
Tj junction temperature note 2 −20 +150 °C
Vesd electrostatic discharge voltage note 3 −4000 +4000 V
note 4 −250 +250 V

Notes
1. Maximum output currents IOUTB and IOUTA are limited by current protection.
2. Internally limited by thermal protection; will be activated for Tj ≥ 150 °C.
3. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.
4. Machine model: equivalent to discharging a 200 pF capacitor through a 0.75 µH inductance.

2004 Jul 22 5
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT


Rth(j-mb) thermal resistance from junction to mounting base note 1 4 K/W

Note
1. To minimize the thermal resistance from mounting base to heatsink [Rth(mb-h)] follow the recommended mounting
instruction: screw mounting preferred; torque = 40 Ncm; use heatsink compound; isolation plate increases Rth(mb-h).

CHARACTERISTICS
VP = 12 V; Tamb = 25 °C; VFB = 40 V; voltages referenced to ground (pin GND); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC supplies (pins VP and VFB)
VP supply voltage 8.2 − 25 V
VFB flyback supply voltage note 1 VP + 6 − 60 V
Iq(FB) quiescent flyback current no load; no signal − 2.5 4 mA
Iq(P) quiescent supply current Idefl = 0 − 80 130 mA
Input stage (pins INP, INN and FEEDB)
Ii(dif) differential input current note 2 − ±500 ±600 µA
Ii(dif)(offset) differential input offset current Idefl = 0; Rref = 3 kΩ; 0 − ±20 µA
[Ii(dif)(offset) = IINP − IINN] Rm = 1 Ω
IINP, IINN single-ended input current 0 ±300 ±600 µA
Vclamp(INP) input clamp voltage on pin INP IINP = IINN = 0; note 3 2.7 3.0 3.3 V
Vclamp(INN) input clamp voltage on pin INN IINP = IINN = 0; note 3 2.7 3.0 3.3 V
IFEEDB feedback current − ±250 ±300 µA
VFEEDB feedback voltage 1 − VP − 1 V
Output stages (pins OUTA and OUTB)
Idefl(p-p) deflection current (peak-to-peak value) 0.6 − 2.5 A
IOUTA, IOUTB output current ±0.3 − ±1.25 A
Vsat(OUTA-GND) saturation voltage pin OUTA to IOUTA = 0.7 A − 1.1 1.3 V
pin GND IOUTA = 1.25 A; note 4 − 1.6 1.8 V
Vsat(VP-OUTA) saturation voltage pin VP to pin OUTA IOUTA = 0.7 A − 2.1 2.7 V
IOUTA = 1.25 A; note 4 − 2.8 3.4 V
Vsat(OUTB-GND) saturation voltage pin OUTB to IOUTB = 0.7 A − 1.1 1.3 V
pin GND IOUTB = 1.25 A; note 4 − 1.6 1.8 V
Vsat(VP-OUTB) saturation voltage pin VP to pin OUTB IOUTB = 0.7 A − 1.0 1.4 V
IOUTB = 1.25 A; note 4 − 1.6 2.0 V
LE linearity error Idefl = ±0.7 A; note 5 − − 2 %
VOUTA, VOUTB DC output voltage Ii(dif) = 0; closed loop 5.1 5.7 6.3 V

2004 Jul 22 6
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT


Flyback generator
IFB(p-p) maximum current during flyback on − − 2.5 A
pin VFB (peak-to-peak value)
VFB-OUTA voltage drop during flyback between reverse
pin VFB and pin OUTA Idefl = −0.7 A − −2.6 −3 V
Idefl = −1.25 A − −3.1 −3.9 V
forward
Idefl = 0.7 A − 5.2 6.1 V
Idefl = 1.25 A − 5.7 6.9 V
Vth(OUTA) switch-on threshold voltage on VP − 1 − VP + 1 V
pin OUTA
Guard circuit (pin GUARD)
VGUARD output voltage guard on; 5 6 − V
IGUARD = −5 mA
guard off; IGUARD = 0 − − 0.4 V
IGUARD output current guard on; −5 − − mA
VGUARD > 5 V
Vext external voltage for guard function 0 − 6.5 V
for power save mode; 8.2 − 9.5 V
IGUARD = 0.5 mA
Notes
1. If VFB is between 40 and 60 V a decoupling capacitor CFB = 22 µF (between pin VFB and pin GND) and a resistor
RFB = 100 Ω (between pin VFB and flyback supply voltage) are required (see Fig.6).
2. Differential input current Ii(dif) = IINP − IINN.
3. Input resistance is 500 Ω.
4. Required VP depends on the impedance of the deflection yoke.
5. Deviation of the output slope at a constant input slope.

2004 Jul 22 7
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

handbook, full pagewidth


IINP
(µA)

Driver current from


TDA485x, TDA4841PS
or SAA4856 on pin INP.

t (ms)

IINN
(µA)

Driver current from


TDA485x, TDA4841PS
or SAA4856 on pin INN.

t (ms)
VOUTA
(V)
VFB

VP
Output voltage on
pin OUTA.

t (ms)
VOUTB
(V)
VP

Output voltage on
pin OUTB.

t (ms)

Idefl
(A)
Deflection current
through the coil.
t (ms)

VGUARD
(V)

Output voltage on
pin GUARD during
normal operation.

t flb t (ms)
flyback time t flb
MGU990
depends on VFB

Fig.3 Timing diagram.

2004 Jul 22 8
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

INTERNAL PIN CONFIGURATION

handbook, full pagewidth


8 3 7

VP
2

TDA4867J
1
5

9
4

VP

MGU991

Fig.4 Internal circuits.

2004 Jul 22 9
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

APPLICATION INFORMATION

VFB VP
handbook, full pagewidth

VFB 1N4448 2.2


TDA4867J 7 kΩ
guard output,
BC556 HIGH = error
OUTA 2.2 Ω 3.3 kΩ
6 BC548

22 µF 220
vertical kΩ
output
signal MGU992

Fig.5 Application circuit for external guard signal generation.

handbook, full pagewidth

TDA4867J

1 2 3 4 5 6 7 8 9

IINP Rm
Ldeflcoil = 5.2 mH guard output or
1Ω
Rdeflcoil = 4.2 Ω power save
from driver circuit mode input
TDA485x or SAA4856
IINN RSP CSP

10 Ω (2)
Rp
VP
220 µF 220 Ω Rref

MGU993
3.4 kΩ
RFB
VFB
(1) CFB
(1)
100 µF (VFB < 40 V)

(1) If VFB is between 40 and 60 V a resistor RFB = 100 Ω and a capacitor CFB = 22 µF are required.
(2) The value of CSP is application dependent, but 10 nF minimum is required.

Fig.6 Application diagram with driver circuit TDA485x or SAA4856.

2004 Jul 22 10
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

Example Table 2 Calculated values


Table 1 Values given from application diagram Fig.6 SYMBOL VALUE UNIT
SYMBOL VALUE UNIT VP 8.5 V
Idefl 0.71 A tflb ≈200 µs
Ldeflcoil 5.2 mH Ptot 3.4 W
Rdeflcoil 5.4 [= 4.2 + 7% + ∆R(ϑ)] Ω Pdefl 0.9 W
Rm 1 (+1%) Ω PIC 2.5 W
Rp 220 Ω Rth(tot) 10 K/W
Rref 3.4 kΩ Tj(max)(1) 75 °C
VFB 40 V Note
Tamb 50 °C 1. Tj(max) = PIC × [Rth(j-mb) + Rth(mb-amb)] + Tamb.
Tdeflcoil 75 °C
Rth(j-mb) 4 K/W
Rth(mb-amb)(1) 6 K/W

Note
1. Use heatsink compound.

Calculation formulae for supply voltage:


Vb1 = Vsat(VP-OUTA) + Rdeflcoil × Idefl − U’L + Rm × Idefl + Vsat(OUTB-GND)
Vb2 = Vsat(OUTA-GND) + Rdeflcoil × Idefl + U’L + Rm × Idefl + Vsat(VP-OUTB)
for Vb1 > Vb2 : VP = Vb1
for Vb2 > Vb1 : VP = Vb2
where:
U’L = Ldeflcoil × 2 × Idefl × fv
fv = vertical deflection frequency.
Calculation formulae for power consumption:

P IC = P tot – P defl

I defl
P tot = V P × --------
- + V P × 0.02 A + 0.1 W + V FB × I FB
2

1 2
P defl = --- × ( R deflcoil + R m ) × I defl
3

where:
PIC = power dissipation of the TDA4867J
Ptot = total power dissipation
Pdefl = power dissipation of the deflection coil.

L deflcoil V FB + ( R deflcoil + R m ) × I defl


Calculation formulae for flyback time (tflb): t flb ≈ --------------------------------- × ln  ---------------------------------------------------------------------
R deflcoil + R m  V FB – ( R deflcoil + R m ) × I defl

2004 Jul 22 11
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

PACKAGE OUTLINE

DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); exposed die pad SOT523-1

q1
non-concave
x
Eh

Dh

D
D1 view B: mounting base side
P A2

k
q2

E B

L3
L2

L1
L

1 9

Z e1 w M Q c v M
bp
e m e2
0 5 10 mm

DIMENSIONS (mm are the original dimensions) scale

UNIT A2(2) bp c D(1) D1(2) Dh E(1) Eh e e1 e2 k L L1 L2 L3 m P Q q q1 q2 v w x Z(1)

2.7 0.80 0.58 13.2 6.2 14.7 3 12.4 11.4 6.7 4.5 3.4 1.15 17.5 1.65
mm 3.5 3.5 2.54 1.27 5.08 2.8 4.85 3.8 0.8 0.3 0.02
2.3 0.65 0.48 12.8 5.8 14.3 2 11.0 10.0 5.5 3.7 3.1 0.85 16.3 3.6 1.10

Notes
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2. Plastic surface within circle area D1 may protrude 0.04 mm maximum.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

00-07-03
SOT523-1
03-03-12

2004 Jul 22 12
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

SOLDERING The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
This text gives a brief insight to wave, dip and manual
specified maximum storage temperature (Tstg(max)). If the
soldering. A more in-depth account of soldering ICs can be
printed-circuit board has been pre-heated, forced cooling
found in our “Data Handbook IC26; Integrated Circuit
may be necessary immediately after soldering to keep the
Packages” (document order number 9398 652 90011).
temperature within the permissible limit.
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit Manual soldering
board.
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
Soldering by dipping or by solder wave
2 mm above it. If the temperature of the soldering iron bit
The maximum permissible temperature of the solder is is less than 300 °C it may remain in contact for up to
260 °C; solder at this temperature must not be in contact 10 seconds. If the bit temperature is between
with the joints for more than 5 seconds. 300 and 400 °C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

SOLDERING METHOD
PACKAGE
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

2004 Jul 22 13
Philips Semiconductors Product specification

Full bridge current driven vertical


TDA4867J
deflection booster

DATA SHEET STATUS

DATA SHEET PRODUCT


LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information  Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Jul 22 14
Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825


For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2004 SCA76


All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R21/02/pp15 Date of release: 2004 Jul 22 Document order number: 9397 750 13443

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