Example 4-5-1: Directional Coupler

A symmetric directional coupler with infinite directivity and a forward attenuation of

20 dB is used to monitor the power delivered to a load Zt (see Fig. 4-5-4). Bolometer
I introduces a VSWR of 2.0 on arm 4; bolometer 2 is matche-0 to arm 3. If bolometer I

II 20dB 12
Genentor
"'
SWR = 2.0 z.
T'

3I 14
--
Bolometer 2 Bolometer I
Figure 4-5-4 Power measurements by directional coupler.

Sec. 4.5 Directional Couplers 153

reads 8 mW and bolometer 2 reads 2 mW, find: (a) the amount of power d.issipated in
the load Z,; (b) the VSWR on arm 2.
Solution The wave propagation in the directional coupler is shown in Fig. 4-5-5.

L SWR=2.0
Port I Port 2

- 900 mW
t-..
900mW-
,~ z,
100mW-
Generator

I 9mW-
I
I mW
--------!mW--------
' 8mW
Port 3 ...__ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ .

SWR= 2.0
 a. Power dissipation at Zt,

I. The reflection coefficient at port 4 is

p-1 2-1 I
lfl = p +I= 2 +I= 3
2. Since the incident power and reflected power are related by
p- = p• 1r12
whe.re p + = incident power and P - = reflected power, then
I fr ,-;;:-
Ir 1= 3 = 'Jr= 'J's+"r
The incident power to porl 4 is Pt = 9 mW, and 1he reflected power from porl
4 is P; = I mW.
3. Since port 3 is matched and the bolometer at port 3 reads 2 mW, then 1 mW
must be radiated through the holes.
4. Since 20 dB is equivalent to a power ratio of 100:1, the power intput at port I is
given by
P, = IOOPt = 900 mW
and the power reflected from the load is
pl- = 100 x (I mW) = 100 mW
5. The power dissipated in the load is
P, = Pt - P2- = 900 - 100 = 800mW

154 Microwave Waveguides and Components Chap. 4

b. The reflection coefficient is calculated as

fr ftoo I
1r1= 'Jr= 'J~= 3
Then lhe VSWR on arm 2 is
_ I + lf l _ 1 + 1 _
20
P - I - I fl - I - ½ - ·
1. T"-' :. ~, ..:i r,-, ., c ;_ " , r- -/w-,
;~ 1 n , I t,J . 'Ti'-' C~ l. r ,U ." ..{,.__tU, A
1t; 12, Ov"'-"l C\. cli.'" a,t/ "•~· ¾ Cf
ect<1.11re

-
lb Cllf~ l a11U.. .

'!~i
•

'l' ) --J1e p1
P1--
])( ciBJ ;; 1 <' j ~l1c ;4-
'3
. :l

-
.....

411~-h- I -,; (4 r l .. .--

4'11 ,41 ,e, / 52 • Ii Ii~ -=.. - - -- 22:9.81
6 di ocllCNI cou- X
I ::, - ") C t'.,. ~ 1 C
( 1

p4-
0 -
'1--10 P1 - ::. J. ;;
Pt , ") ..

P,
Ptt

P,
Pt1 -- 1 1. f, 2-
-
- 1 'r ))

'1 1 6'1
Ir)
-- c , ,, 1 1 6 })) w
- C • C' 'j 'l . l 'l. , t.rJ
P+ ( "'/
. . .
 - = C • D ' I
:,
I '·
c 1 ') 1 w

p~

Pll
t1
- N ,: l ,f-_ l
1 ,;,
) :: 1 0
'l,

f1
- '=-
P-1 t; ' c- ').. '))• 1,J - . r ~ l '/ . lo
-
0

p'1 9 ....
Lecti.n 5 dbec:t¥c> iat o;,c,1,., >C

Ah: i '& l ~ J ::: 1 01

1o

- ( I?l,W <ly ,t
" '"), (..,""i.,1p,( I.Pt f ,t
O>

+ p O"l...J ,(/-., / "l-, A., Cv ,/ AL.~ ~ 01-7)

 •
'- 'n Pb~+ ".L

1- = k pv-f jJ cnJ ~-- - ( / " <n,J ti y ,:"h C """'1c,,~o- f f o, -I

•t- J,o-w "~ / 1-, ,._"c c I td:v,( p<71-J)

•
-- 1 -
--
 LeCtJJle 6 dlrectlonal cou...
x

r
•
. .~
( lv - p_,..,, .f {,Y - " "' A:'V'--'-l.

.
A.""' 4 . . """' "t. f cr,.l"' P ~•b r(\. \. ~ +e,.., -' I\IYI ..l
.,
j(.. • • Q. •
I
l M-'--r t:...,._, (_c J '
-}- ..,, { IV~ r{) 'V' -t {_
• ( /Y >
l
Q\) ~~ l I) ) /i_~ '( e<t~ LU:.,'t ( 'b ) ) :f k, I " ,i 1-1.v\.'Yl Q..,,,
( J<) (.__,...,\-1..N' c-J.l i. lv r )-+ c. . 'v
. ')'Y'.A-+ C t,.l v1 , -r~ . . . f\, vl cl l f ,. ~ ~ t" 4

G-~t ,,
-- r,
c l ~ -l -w ) A. /)'1 d. 12 1 0
O~ 1e
-P+
'
•y fV v- 'Y'"-" C L• C" " ,) •
UV' r{JZ. -- 1 o d ~, ci -P,
t
p'1..
-
Example 7·•2-2: Characteristics of a GaA.s 6111111 Dloili
A typical n-type GaAs Gunn diode has the following parameters:

Threshold field Em = '2800 V/cm

Applied field E = 3200 V/cm
Device length L = 10 µ,m
Doping concentration no= 2 x 10 1~ cm-3
Operating frequency f = 10 GHz

a. C9mpute the electron drift v~loc~ty.

b. Cal.culate the current density .
c. Estimate the negative electron m.obility.
Solution

a~ The electron drift velocity is

vd = 10 x 109 x l0 x 10-6 = lOS m/sec = 107 cm/s.ec
b. From Eq. (7-2-12) the current density is
J = qnv = l.6 X 10- 19 X 2 X f ()2<l X LO X 109 X 10-s
= 3.2 X 106 A/m.2
= 320 Alcm1
c. The neg;llive electron mobility is
Vd 107
11.
,-n
=- -.E =. - - - = - 3100 cm2/V · sec
3200
Example 7.z:.1: Conductivity of an n-Type GaAs Gfilijij DWli

Electron density: r,= 1018 cm- 3

Electron•density at l.ower valley: nt = 10!0 om- 3
Eleclron density at upper valley: n• = 108 om- 3
Temperature: T = 300°K

Determine the c<;>nductivity Qf the dio4e.

Solution From Eq. (7-2-2) the cond11ctivity is
u = e(µ t nt + µ,,n,.)
= 1.6 X J0- 1~(8000 X 10-4 X 1016 + 180 X 10- 4 X 1014)
::::: 1.6 X 10- 1·9 X 8000 X. 10- 4 X 10 16

= 1.28 mmhos
.- ., .s ..,.,._nSdod
S- ><
f l t t t- ~c,.,., C'\v·v
-..

(lf )1 e -;:

\,,' 1 l t j '>le.., ; IC[>

}-.i. 1i?o t )-., 7/V " •
::: J P t -,.iiq >nl/
I \' t,,

fl-v tt'Y\'\llv..t~--..'~~

(; :::. ( 'Y)J tii " t 11'-' Pv )

. I
- 1~ t)o • r " f-ot\
-;::.. 1. (- ,,_ 1t ( · ~ 1o 'b + 1 C1
4
l' ,. ,-
Y.. 1Bo ~10 4 J
Example 8-3-1: Avalanche-Zone Velocity of a TRAPATT Diode
A TRAPATT diode has the following parameters:

Doping concentration: NA =2 x 10 15 cm- 3

Current density: J = 20kA/cm2

Calculate the avalanche-zone velocity.

Solution From Eq . (8-3-4) the avalanche-zone velocity is
J 20 X 103
Vz = {/NA 1.6 X 10- 19 X 2 X 101s = .6 .25 X 101 cm/s

This means that the avalanche-zone velocity is much larger than the scattering-limited
velocity.
Example 8-2-1: CW Output Power of an IMPATT Diode
An IMPATT diode has the following parameters:

Carrier drift velocity: vd =2 x 107 crn/s

Drift-region length: L = 6 µ.m
Maximum operating voltage: V0mu = 100 V
Maximum operating current: I0mv. = 200 mA
Efficiency: TJ = 15%
Breakdown voltage: Vw = 90 V
Compute: (a) the maximum CW output power in watts; (b) the resonant frequency in
gigahertz.
Solution

a. From Eq. (8-2-10) the CW output power is

P = 71Pdc = 0.15 X 100 X 0.2 = 3W
b. From Eq. (8-2-4) the resonant frequency is
Vd 2 x IOS
f = 2L = 2 x 6 x 10-6 = 16.67 GHz
Example 8-4•1: Breakdown Voltage of a BARITI •Diode
An M-Si-M BARITI diode has the following parameters:

Relative diel~ctric cons~ant of silicon: E, = 11.8

Donor concentration: N = 2.8 x J()ll m- 3
Silicon length: .L = 6µ;m
Determine: a. the breakdown voltage; b. the breakdown electric field.
Solution

,a . From Eq. (8-4-1) the breakdown voltage is, double •its critical voltage as
qNL 2 1.6 X 10- 19 X 2.8 X 1021 X (6 X 10-6 ) 2 .

vbd = Es = 8.854 X 10- 12 X 11.8 = 154·36 V

b. The breakdown electric field is
_ Vbd _ 154.36 _ S
Ebd - L - 6
x
10
_6 2 • 73 x 7 _
10 V/m - 2 .57
n5
x lv- V/cm