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Adobe Scan Oct 5, 2023

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Subodh Kumar
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16 views

Adobe Scan Oct 5, 2023

Uploaded by

Subodh Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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---. . ........- _.

_°"'___ ,
M - _.L>ClorME,...,,,: _ ,..

_...,<-..- ........ "' --


_,,. ,._.,..,__,_

Vo-•-
1r.. - l J l ' -•IMIIJ ...
-. ........ 10 «oo•

n.-,_,,.._g)'_ r..,..,,,,,.. _ _
e.,,,o L-.-~-
-·,--
T.... I S . , , _ L_ OI

.p----g)'-
-- -
-- --- -
-oncluct<>r. F.-rn-NS

... -. .....
---.......-on-.11<1
-•-~....,.,.. ....... LEO., ~ -
- - - ....·•~Lcu•'7 K=J .~~x10·.t.JJ/K and intrinsic carrier concentration n1 for_.- '
silicon is I .SXJO'°tcm>). (3~I
S . (a). 'What is a compensated semiconductor? Deduce an expression for electro~
-------,,,,--,d1mfe--concentrations"in, rcompensated -semiconductor. '.:1) - 1

(b). Write about _d egenerate and non-degenerate semiconductors. (3)= j


6. Write ,.h,,,..,. ,1-._ -'"'- 11 - - -- •
- " ' """MUYlll'H\TlU~ (l'<OV.~V.I.O/

EP- 3 04-Semiconductor Devices


~:3:00H Max. Maries: 70
Note· ours
• Answer any FIVE questions
Assume suitable missing data, If any.

- -1 ..(a)..Dcfine ·densi ty.ofstates.andderive.anexpression.foul~y~ 00 M}


(b). Calculate the d ens1ty
· · o f states wi"th energies
• between 0 and I eV per 111111
. volwne. (4 M)
2· ~a). What Fermi distribution function? Explain how Fenni distribution function variation
With energy at different temperatures and what is its significance. (10 M)

(b).Density of silver is 10.5 X IO'Kglm3• The atomic weight of silver is 107.9. Assuming
that each silver atom provides one conduction electron, (i) calculate the density of electrons.
The conductivity of silver at 2ri'C is 6.8Xl 07 /ohm•m (ii) Calculate mobility of electrons in
silver. (4M)

3. (a). Explain in detailed the graded impurity distribution in a semiconductor and derive the
expression for induced electric field developed with non-wuform doping. (10 M)

(b).The donor concentration in a n-type semiconductor at T=300 K is given by


Nd(X)=l0 16 - 10 19 x (cm"3) . Where "X" is given in cm and ranges between O and I µm. If
the concentration variation is linear, then determine the induced electric field in the
semiconductor in thermal equilibrium. (4 M)

4. (a). Discuss about drift and diffusion in semiconductors. Derive an expression for drift
current density of an extrinsic semiconductor. (10 M)

(b). Calculate drift current density in a gallium arsenide exposed to an electric field of
16 3
JOV/cm at 300K with doping concentrations N,=O and N.i=l0 /cm under complete 2
2
ionization process. The electron and hole nobilities are 8500cm N-s and 400cm N-s
respectively. (4M)
1· (a).
1'ts . .
----
What is d
S•snificance.
· · d .
ensity of states? Deduce an expression for density of state function an wntc
· · (10 M)

(b). Calculate density of states per unit volume with energies between 0 aod I eV. · (4M)
2
-(a). Explain the foll!l8tion of bands in a solid uslng Kronig-Penney Model. (lOM)
(b). Detennine the probability for an energy level 3k:T above the Fermi energy level is
OCcupied by an electron at 300 K temperature. · (4M)

3. (a). Derive an exj:.,ression for thermal equilibrium electron and hole concentrations in an
intriµsic semiconductor. (10 M)

(b). Calculate the !henna! equilibrium hole concentration in silicon at T=400 K for the case
where the Fenni energy level is 0.27 eV above the valance band. [Effective density of states
function in valance band is l.04xl0 19/cm3; Boltzmann constant K= 8.62xlO-' eV/KJ. (4M)
, f,c n :.·.::-:csi, se!lllconductor with a bamd,ap of 0.7eV, calculale the CODCallnliollof
,-·· -,,. ·•·-:·,,,..,.,.a, 3C0 K a s s ~ efJIGlive mass ofelecllOII is equal to nnof
:c, e•c:r:;c (3 c::zn,.rm Coostant K • ~ab.0·01 ai'KgrK·1) . (2M)

, ,. Ileccce ac, expression for th~ ibrh'lll hole concentrations in va1aDce bad of a
,,:::,:c::cct:c c. (3M)

r,1 c,:,u:,:e thenn,l equilibriWJljlole CODCellll'ltionin silicon at T-400K. (Feimi eaeqy


''"!:, 0 abo ve the nla-'midllldeffeclive deuity of state fimclioa in Y&lance bad
:ccs': sc·>n ,t T=3WK is I.ct' IO"lcm'.) (2M)

, . '•J. D<c ,ce c'2e exin& far tbe electrical coadualmty of,. Nl'tlicallducl, 111d sbow
c'2et t:.,c:,.1u:11vi1yofallldmicllllliCXlllduclar._willl~la . . . . . .
(lM)
1s•.s a..11aac.ca.GOaa.at uoc.
(21,f)

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