1142 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO.

7, JULY 1999

An Efficient FDTD Algorithm for the Analysis of

Microstrip Patch Antennas Printed on a
General Anisotropic Dielectric Substrate

An Ping Zhao, Jaakko Juntunen, and Antti V. Räisänen

Abstract—In this paper, an efficient three-dimensional finite-difference

time-domain (FDTD) approach based on the D-, E-, and H-fields is
proposed to handle arbitrary anisotropic dielectric media; and, partic-
ularly, the way of imposing the electric-wall boundary condition on the
surface of perfect electric conductors is discussed in details. By combining
the proposed FDTD approach with the material-independent perfectly
matched-layer absorbers, the performance of a line-fed microstrip patch Fig. 1. The 3-D FDTD unit cell used for an arbitrary anisotropic dielectric
antenna deposited on general anisotropic dielectric substrate is investi- medium.
gated. The scattering parameters of the antenna as a function of the
rotation angle of the optical axis of the anisotropic substrate are presented 2) It is less accurate because the updating procedure for E was
for the first time. Numerical results demonstrate how the resonant done in terms of the spatial derivatives within two space steps
frequencies of the antenna are influenced by the anisotropy.
of H [10], [11].
Index Terms— FDTD, general anisotropic dielectric media, MIPML 3) It is hard to apply discontinuous boundary conditions between
absorber, patch antennas. two different dielectric media, as normal (with respect to the
interface of the media) electric-field components are defined on
the edges of the variants of Yee’s grid [11].
I. INTRODUCTION
4) It is almost impossible to impose perfect electric conductor
During recent years, great interests have been shown in using (PEC) conditions due to the same reason explained in 3).
microstrip lines deposited on anisotropic substrate since the substrate
In this paper, to overcome the above difficulties, an efficient
anisotropy could have important implications on the operation of
three-dimensional (3-D) FDTD algorithm based on the D-, E-, and
microstrip circuits [1], [2]. With the increasing complexity of ge-
H-fields is proposed to handle arbitrary anisotropic dielectric media.
ometry and material property, designing these circuits requires more
In particular, in the proposed approach, neighboring quantities within
and more dedicated and sophisticated computer-aided-design (CAD)
only one space step are used in the averaging approximation [see
tools to predict the characteristics or performance of the circuits,
(3)] in space (also spatial derivatives within two space steps are
as most of these structures do not lead themselves to analytical
not involved in the updating equations) and no normal electric
solutions. The finite-difference time-domain (FDTD) method, which
field components are defined at the edges of the FDTD unit cell
was introduced by Yee in 1966 [3], has been proven to be one of
(see Fig. 1). In addition, unlike the algorithms based on E and
the most powerful CAD tools for solving this class of problems
H, Berenger’s perfectly matched layer (PML) absorbing boundary
due to its high flexibility. However, in the past, the application
condition (ABC) [12] can be very simply and easily adopted (in
of the FDTD method has been mainly focused on the circuits
terms of material-independent PML (MIPML) absorbers [13]-[15])
deposited on the materials with isotropic [4]–[8] or diagonal tensor
in the present approach. Consequently, the approach proposed in this
permittivity [9]. It is obvious that, under certain circumstances,
paper is more flexible and accurate than the previous approaches.
many circuit materials exhibit more or less anisotropic behavior that
This paper is organized as follows. In Sections II and III, the
cannot be simply ignored in the circuit simulation and, thus, an
proposed 3-D FDTD algorithm based on the D-, E-, and H-fields
accurate theoretical characterization could be the key issue for critical
is described. The numerical implementation for the treatment of
designs and successful applications of integrated circuits based on
PEC’s is discussed in Section IV. To demonstrate the effectiveness
anisotropic materials. Therefore, extension of the FDTD method to
and usefulness of the proposed algorithm, the influence of the
cover arbitrary anisotropic materials is highly preferred.
anisotropy on the scattering parameters of line-fed microstrip patch
In the past, although FDTD approaches based on the E- and H-
antennas deposited on anisotropic dielectric substrates is investigated
fields were developed (in connection with Yee’s grid [10] and the
in Section V and, finally, a conclusion is presented in Section VI.
variants of Yee’s grid [11]) for arbitrary anisotropic dielectric media,
these approaches have the following drawbacks in real applications.
II. MAXWELL’S EQUATIONS IN 3-D ARBITRARY ANISOTROPIC MEDIA
1) It is difficult to calculate the field components located at a half-
space step [e.g., Ex (0:5; j; k)] inside the mesh truncation since Suppose that ["] is the relative permittivity tensor of an arbi-
neighboring quantities within two space steps are involved in trary anisotropic dielectric (loss-free) medium, thus, in this medium,
the updating equations (see [10, eq. (21)] and [11, eq. (10)]). Maxwell’s equations can be written as
@Dx @Hz @Hy
@t
=
@y
0 @z (1a)
Manuscript received January 21, 1999.
@Dy @Hx @Hz
A. P. Zhao is with the Electronics Laboratory, Nokia Research
@t
=
@z
0 @x (1b)
Center, Itamerenkatu 11-13, FIN-00180, Helsinki, Finland (e-mail: an-
@Dz @Hy @Hx
[email protected]).
J. Juntunen and A. V. Räisänen are with the Radio Laboratory, Department @t
=
@x
0 @y (1c)
of Electrical and Communications Engineering, Helsinki University of
@Hx @Ey @Ez
Technology, FIN-02150 Espoo, Finland. 0
@t
=
@z
0 @y (1d)
Publisher Item Identifier S 0018-9480(99)05300-4.

0018–9480/99$10.00  1999 IEEE

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 7, JULY 1999 1143

@Hy @Ez
0
@t
= @x 0 @E
@z
x
(1e) Therefore, by combining the updating procedures for H and D with
the above updating scheme for E, the FDTD approach based on
@H @E
0 z = x
@t @y
0 @E
@x
y
(1f) the D-, E-, and H-fields can be used to study arbitrary anisotropic
dielectric materials. In this approach, however, to correctly impose
where 0 is the permeability in vacuum. To easily handle arbitrary the electric-wall boundary condition on the surface of PEC’s, special
anisotropic dielectric media, the magnetic field, H, electric field, attention should be paid to the tangential electric displacement t D
E, and electric displacement, D, are involved together in (1). The (e.g., Dx and Dy ).
relationship between E and D is of the following form:

Ex =
("yy "zz 0 "yz "zy ) D + ("xz "zy 0 "xy "zz ) D IV. TREATMENT OF PEC’S
x y
3 3 On the surface of PEC’s, the tangential electric field t must be E
("xy "yz 0 "xz "yy )
+ 3 Dz (2a) zero, and the implementation of such a condition is straightforward
in the FDTD updating formulation [3]. However, from (1) one can
(" " 0 " " ) (" " 0 " " )
Ey = yz zx yx zz Dx + xx zz xz zx Dy see that, although in the proposed algorithm the PEC condition for
3 3 H
H (i.e., the normal magnetic field n = 0) can be automatically
("xz "yx 0 "xx "yz ) E
satisfied while t = 0 is applied, the PEC condition for E (i.e.,
+ Dz
(" " 0 " " )
3
(" " 0 " " )
(2b)
E t = 0) cannot be kept because E is actually updated from D.
Ez = yx zy yy zx Dx + xy zx xx zy Dy Therefore, in order to make sure that the PEC condition is correctly

(
3
"xx "yy 0 "xy "yx )
3 E
imposed for t , the values of the tangential electric displacement t D
+ Dz on the surface of the PEC have to be calculated or justified. In what
3 (2c)
follows, it will be shown that different calculation procedures for t D
where 3 = "0 ("xx "yy "zz + "xy "yz "zx + "xz "yx "zy 0 "xz "yy "zx 0 should be adopted while the PEC is located at different positions.
"xy "yx "zz 0 "xx "yz "zy ) and "0 is the permittivity in vacuum. If the PEC is located inside the mesh domain (e.g., the metal
microstrip line), e.g., at k = k0 , then Dx and Dy on this PEC can
be calculated, respectively, from (3a) and (3b) by imposing Exn = 0
III. EXTENSION TO ARBITRARY ANISOTROPIC DIELECTRIC CASES
Fig. 1 shows a 3-D unit cell used for the proposed FDTD approach, or Eyn = 0 as follows:
where the locations of the components of E and H are the same as
those in [3] and the positions of the components of D are located at Dxn (i +0:5; j; k0 )
the same positions (in the x-, y -, and z -directions, respectively) of ("xz "zy 0 "xy "zz ) Dn(i; j 0 0:5; k )+ Dn(i; j +0:5; k )
= 0 4(
the components of E; and on the edge of the 3-D unit cell, only the "yy "zz 0 "yz "zy ) y 0 y 0

tangential (with respect to the surface of the edge) electric field and + Dy (i +1; j 0 0:5; k0 )
n
electric displacement field components are involved. The FDTD unit
cell shown in Fig. 1 is applicable to arbitrary anisotropic dielectric
+ Dyn(i +1; j +0:5; k0 )
materials; and the updating procedures used for D and H are similar
to those used for E and H in the isotropic cases [3].
0 4((""xyyy""yzzz00""xzyz""yyzy)) Dzn(i; j; k0 0 0:5) + Dzn (i; j; k0 +0:5)
Since in the FDTD mesh the components of E and D are position + Dzn(i +1; j; k0 0 0:5)
+ Dzn(i +1; j; k0 +0:5)
dependent, (2) must be rearranged while the proposed FDTD method
is applied because this equation is valid only when the concerned field (4a)
components are defined at the same position. By using an averaging Dyn (i; j +0:5; k0 )
= 04((""yz ""zx 00""yx ""zz )) Dxn(i 0 0:5; j; k0 )
approximation procedure in space on D, (2a) and (2b), for example,
can be written, respectively, in the FDTD form as xx zz xz zx
Exn (i + 0:5; j; k) + Dxn(i 0 0:5; j +1; k0 )
= ("yy "zz 0 "yz "zy ) Dxn(i +0:5; j; k)+ ("xz "zy 0 "xy "zz )
3 43
+ Dxn(i +0:5; j; k0 )
+ Dxn(i +0:5; j +1; k0 )
1 Dyn (i; j 0 0:5; k)+ Dyn(i; j +0:5; k) + Dyn (i +1; j 0 0:5; k)
+ Dyn(i +1; j +0:5; k) 0 4((""xzxx""yxzz00""xxxz""yzzx)) Dzn (i; j; k0 0 0:5) + Dzn (i; j; k0 +0:5)
0 "xz "yy ) Dn(i; j; k 0 0:5)+Dn(i; j; k +0:5) + Dzn(i; j +1; k0 0 0:5)
+ ("xy "yz43 z z
+ Dzn(i; j +1; k0 +0:5) : (4b)
+ Dzn(i +1; j; k 0 0:5)
+ Dzn(i +1; j; k +0:5) (3a)
D
Equations (4a) and (4b) calculate the values of t on the surface of
the PEC located inside the mesh domain. Imposing this implicit PEC
n
Ey (i; j +0:5; k) D E
condition to t makes sure that the condition t = 0 is correctly
0 "yx "zz ) Dn(i 0 0:5; j; k)+ Dn(i 0 0:5; j +1; k)
= ("yz "zx 43
applied; and failing to do this may cause instability.
x x However, if the PEC is located exactly on the mesh truncation (i.e.,
n
+ Dx (i +0:5; j; k) the ground metal plane), e.g., at k = 0, then (4a) and (4b) are not
valid since in these equations some points [e.g., Dyn (i; j; k0 0 0:5)
+ Dxn(i +0:5; j +1; k) in (4a)] are outside the mesh domain and, thus, not available. To be

+ ("xx "zz 0 "xz "zx ) n (" " 0 " " )

Dy (i; j +0:5; k) + xz yx xx yz
D
able to calculate the t field on this PEC (i.e., at k = 0), a linear
3 43 approximation procedure [16], which is similar to the one successfully
1 Dzn(i; j; k 0 0:5)+ Dzn(i; j; k +0:5) + Dzn(i; j +1; k 0 0:5) used for the analysis of magnetized ferrites [17], is employed to
calculate the Dx , Dy , and Dz fields first on the PEC as follows:
+ Dzn(i; j +1; k +0:5) (3b) Dxn (i + 0:5; j; 0) = 2Dxn(i + 0:5; j; 1) 0 Dxn (i + 0:5; j; 2) (5a)
1144 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 7, JULY 1999

( + 0:5; 0) = 2Dyn(i; j + 0:5; 1) 0 Dyn(i; j + 0:5; 2)

Dyn i; j (5b)
Dzn (i; j; 0) =
1 3Dzn(i; j; 0:5) 0 Dzn(i; j; 1:5) :
2 (5c)

By combining (3a) with (5b) and (5c), and using the averaging
approximation in space on D, as well as imposing Exn =0
, we have
n( +0 5 0)
Dx i : ; j;

= 4(( ) 2 ( 0 5 1) ( 0 5 2)
0 ""xzyy""zyzz00""xyyz""zzzy Dyn i; j 0 : ; 0 Dyn i; j 0 : ;
) Fig. 2. Line-fed microstrip patch antenna printed on an anisotropic substrate
+ 2 ( +0 5 1) ( +0 5 2)
Dyn i; j : ; 0 Dyn i; j : ; (where the relative permittivities of the uniaxial anisotropic dielectric substrate
are "1 = 2:31 and "2 = 2:19).
+2 ( +1 0 5 1)
Dyn i ; j 0 : ;
( +1 0 5 2)
0 Dyn i ; j 0 : ; "yy= "1 (7b)
+2 ( +1 +0 5 1)
Dyn i ; j : ;
"zz= "1 sin2  + "2 cos2  (7c)
n ( +1 +0 5 2)
0 Dy i ; j : ; "xz = "zx = ("1 0 "2 )sin  cos  (7d)

0 4((""xyyy""yzzz00""xzyz""yyzy)) 3Dzn(i; j; 0:5) 0 Dzn(i; j; 1:5) "xy = "yx = "yz = "zy = 0 (7e)

where  is the angle between the optical axis and the x-direction;
+3Dzn(i +1; j; 0:5) 0 Dzn(i +1; j; 1:5) : whereas if the optical axis is placed in the yz -plane, then the relative
(6a) permittivity tensor is given by

Similarly, by combining (3b) with (5a) and (5c), as well as imposing "xx = "1 (8a)
Eyn =0 , we have "yy = "1 cos2  + "2 sin2  (8b)
Dyn (i; j +0:5; 0) "zz = "1 sin2  + "2 cos2  (8c)
("yz "zx 0 "yx "zz )
= 0 4("xx"zz 0 "xz "zx ) 2Dxn(i 0 0:5; j; 1) 0 Dxn(i 0 0:5; j; 2) " yz = "zy = (" 1 0 "2 )sin  cos  (8d)
"xy = "yx = "xz = "zx = 0 (8e)
+2Dxn(i +0:5; j; 1) 0 Dxn(i +0:5; j; 2)
+2Dxn(i 0 0:5; j +1; 1) where  is the angle between the optical axis and y -direction.

0 Dxn(i 0 0:5; j +1; 2)

For both the anisotropic cases, the space steps used in the compu-
tation are 1x = 0:3891 mm, 1y = 0:4 mm, and 1z = 0:1985 mm;
+2Dxn(i +0:5; j +1; 1) and the total mesh dimensions are 58 2 80 2 22 in the x-, y -, and z -
directions, respectively. The rectangular patch is thus 321x 2 401y ,
0 Dx (i +0:5; j +1; 2)
n
the microstrip feeding port is 61x 2 271y , and the substrate is
("xz "yx 0 "xx "yz )
0 4("xx"zz 0 "xz "zx ) 3Dz (i; j; 0:5) 0 Dz (i; j; 1:5)
n n modeled as 41z . The time step is 1t = 0:4 ps. The half-width of
a Gaussian pulse is T = 15 ps, and the time delay t0 is set to be
3 :1T . On the open boundaries, the MIPML absorber [15] is used. The
+3Dz (i; j +1; 0:5) 0 Dz (i; j +1; 1:5) : interfaces
n n
of the MIPML media are placed five cells from the edge of
(6b) the patch antenna and ten cells above the surface of the antenna. The
D
Equations (6a) and (6b) calculate the values of t on the surface of performance of the MIPML with different parameters were tested,
and it was found that the reflection caused by the MIPML was less
the PEC located on the mesh truncation. Again, imposing this implicit
D
PEC condition to t ensures that the condition t E =0
is applied. than 65 dB when the following parameters were used:
However, it is recommended that t E =0
should also be applied on 1) number of layers N =8in all directions;
04 ;
D
the PEC even it has been implicitly imposed through t . Finally, it 2) normal theoretical reflection coefficient R (0) = 10
needs to be mentioned how the above implicit PEC condition can be 3) power of the conductivity distribution m .=4
applied when the PEC is located inside MIPML regions. If the unsplit- In addition, the advanced source excitation technique [18] (with
field formulations [15] are adopted for the MIPML absorber, then (4) uniform distribution of Dz under the microstrip line) is adopted and
and (6) can be used directly. However, if the split-field formulations the input plane is located 21
y inside the MIPML. The simulation is
[13], [14] are used, then the forms of (4) and (6) should be changed. performed for 8000 time steps and the reference plane for the port is
For example, either Dxy or Dxz should be updated, instead of Dx , set at 101 y away from the edge of the patch.
on the surface of the PEC since in this case Dx is split to Dxy and D
To demonstrate that t is not zero on the surface of PEC’s, the
Dxz [i.e., Dx =Dxy Dxz ].+ contour plots of Dx and Dy recorded (at 800 time steps) on the plane
where the microstrip and patch antenna lie for the case  = (i.e., = 4
V. NUMERICAL RESULTS the optical axis of the substrate is located in the xz -plane) are shown
in Fig. 3(a) and (b), respectively. It can be seen from Fig. 3 that Dy
Using the technique developed in this paper, a line-fed microstrip
is zero on the surface of the PEC (in our case, the microstrip line and
patch antenna printed on a general uniaxial anisotropic dielectric
patch are the PEC), but Dx is not. This is due to the fact that, in this
substrate (as shown in Fig. 2) is studied. The following two different
special case, "xy is zero and "xz is not. Although the (maximum)
anisotropic cases for the anisotropic substrate will especially be
considered: the optical axis lies either in the xz - or yz -planes. In
D
value of t on the surface of the PEC is much smaller (about 2.0%)
than its value near the edge of the PEC, ignoring it in the calculation
particular, when the optical axis is located in the xz -plane, the relative
will cause instability and fault numerical results. Fig. 4 shows the
permittivity tensor is given by
waveforms of the normalized incident and reflected vertical electric
"xx = "1 cos2  + "2 sin2  (7a) fields (recorded at the reference plane and just underneath the strip)
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 7, JULY 1999 1145

Fig. 5. S -parameter of the microstrip patch antenna as a function of  , where

(a) the optical axis lies in the xz -plane and the values of the angle  are zero,
=4, and =2, respectively.

(b) Fig. 6. S -parameter of the microstrip patch antenna as a function of , where

the optical axis lies in the yz -plane and the values of the angle  are zero,
D
Fig. 3. Contour plots of the field components of t recorded (at 800 time =6, =3, and =2, respectively.
steps for the case  = =4) on the plane where microstrip line and patch
lie. (a) Dx . (b) Dy .
for the case  = =4. As shown in Fig. 4, the stable state of the
structure is already reached at 8000 iterations. Once the waveforms
of the incident and reflected vertical electric fields on the reference
plane are obtained, the incident and reflected voltages between the
metal strip and ground plane can be calculated and, thus, the S -
parameter can be calculated [4], [5]. The scattering coefficient results
as a function of  are shown in Fig. 5. From Fig. 5, one can observe
that the operating resonant frequencies are decreased while the angle
 increases from zero to =2; such a reduction is more significant for
the higher operating resonance. In particular, while the values of  are
chosen to be zero, =4, and =2, the operating resonant frequencies
at the lowest operating resonance (i.e., near 7.5 GHz) are 7.47, 7.37,
and 7.28 GHz, respectively, whereas at the highest resonance (i.e.,
around 18 GHz), they are 18.03, 17.81, and 17.58 GHz, respectively.
Finally, we calculate the S -parameter of the antenna for the case
where the optical axis lies in the yz -plane. In this case, Dx on the
surface of the PEC is not zero, but Dy is zero since the optical
axis lies in the yz -plane. Fig. 6 demonstrates the S -parameter as a
function of . It can be seen from Fig. 6 that, for the case where the
optical axis lies in the yz -plane, the influence of the anisotropy on
Fig. 4. Waveforms of the normalized incident and reflected vertical electric
fields (Ez ) just underneath the metal strip of the microstrip patch antenna the S -parameter, which is similar to the case where the optical axis
for the case  = =4. is located in the xz -plane, is again observed.
1146 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 7, JULY 1999

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