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Materials Chemistry A: Journal of

This document reviews aspects of additive engineering in perovskite solar cells. It discusses how additives can be used to address issues like defects, grain boundaries, and recombination in the perovskite active layer. This improves properties like efficiency, stability, and reduces hysteresis. The document provides background on perovskite solar cell development and discusses research on using physical and chemical passivation and various organic and inorganic additives.

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0% found this document useful (0 votes)
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Materials Chemistry A: Journal of

This document reviews aspects of additive engineering in perovskite solar cells. It discusses how additives can be used to address issues like defects, grain boundaries, and recombination in the perovskite active layer. This improves properties like efficiency, stability, and reduces hysteresis. The document provides background on perovskite solar cell development and discusses research on using physical and chemical passivation and various organic and inorganic additives.

Uploaded by

Tahir Sajjad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Journal of

Materials Chemistry A
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A review of aspects of additive engineering in


Cite this: J. Mater. Chem. A, 2020, 8, 27
perovskite solar cells
Apurba Mahapatra, †a Daniel Prochowicz, †b Mohammad Mahdi Tavakoli, *c
Suverna Trivedi,d Pawan Kumara and Pankaj Yadav *e
Published on 05 December 2019. Downloaded on 5/16/2024 8:15:11 AM.

Solar energy is a clean source of energy that can help fulfill the increasing global energy demand. Among
light harvesting devices, perovskite solar cells (PSCs) have been a focus of interest among next-generation
photovoltaic (PV) technologies due to their incredible conversion efficiency (certified PCE of 25.2%) along
with their lower cost and ease of fabrication. However, the presence of many transport barriers and defect
trap states at the interfaces and grain boundaries has negative effects on PSCs; it decreases their efficiency
and stability and increases the hysteresis effect. Further controlling the morphology, grain boundary, grain
size, charge recombination and density of defect states in the perovskite layer is necessary to enhance its
photovoltaic performance and stability. In this review, we summarize the intensive research efforts in
aspects of additive engineering in PSCs, including physical and chemical passivation, and the use of
Received 15th July 2019
Accepted 6th November 2019
a wide variety of organic and inorganic additives to address these issues. Here, we mainly focus on
passivation techniques in the perovskite active layer and their effects on the PV performance and stability
DOI: 10.1039/c9ta07657c
of PSCs; the grain boundaries and surface defects in the perovskite layer play major roles in the
rsc.li/materials-a recombination, carrier lifetime and charge transfer of PSCs.

iodine in CH3NH3PbBr3, the PCE was slightly increased to 3.8%.3


1. Introduction Aer that, in 2012, Kim et al. successfully fabricated the rst solid
The global energy demand is increasing due to population state perovskite solar cell with a PCE of 9.7% using spiro-
growth and industrial development. This demand is mainly MeOTAD as a hole-transporting layer.4 Remarkably, in just the
addressed by fossil fuels such as coal and oils, which will be next few years, PSCs reached certied power conversion effi-
depleted in the near future. Therefore, it is important to nd ciencies (PCE) of over 23%; this was realized in 2017 by engi-
long-lasting, clean and renewable alternative energy sources to neering the perovskite composition and thin lm deposition
fossil fuels. Solar energy is a clean energy source that can fulll method.5,6 More recently, the certied PCE of PSCs increased
the global energy demand and can be directly converted into even further to 25.2%, as can be found in the NREL PV chart.7
electricity using photovoltaic (PV) devices. Perovskite solar cells It has been theoretically demonstrated that a good perovskite
(PSCs) have been a center of interest among next-generation absorber shows excellent electronic dimensionality for PV
photovoltaic technologies due to their incredible power conver- applications; this is mostly fullled by the 3D lead halide
sion efficiency (PCE) along with their lower cost and ease of perovskites.8 These semiconductor materials exhibit unique
fabrication.1 The rst photovoltaic device based on a lead halide physicochemical properties, such as low band gaps, high light
perovskite material with a PCE of 2.2.% was reported by Miyasaka extinction coefficients, long charge carrier diffusion lengths, long
and co-workers using CH3NH3PbBr3.2 By replacing bromine with charge carrier lifetimes and high charge carrier mobilities.9–11
Despite the success of 3D perovskite-based devices in enhancing
the efficiency of PSCs and their low fabrication cost, these devices
a
Department of Physics & Astronomy, National Institute of Technology Rourkela, still face several critical challenges, including lead toxicity and
769008, India low long-term stability.12 In the context of toxicity, there has been
b
Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 growing research interest in developing alternative lead-free
Warsaw, Poland
c
perovskites with low toxicity and high stability.13 Some lead-free
Department of Electrical Engineering and Computer Science, Massachusetts Institute
elements, e.g., tin (Sn), germanium (Ge), antimony (Sb) and
of Technology, Cambridge, MA 02139, USA. E-mail: [email protected]
d
Department of Chemical Engineering, School of Technology, Pandit Deendayal
bismuth (Bi), exhibit similar ionic radii, electron congurations
Petroleum University, Gandhinagar-382 007, Gujarat, India and semiconducting characteristics; they have been proposed as
e
Department of Solar Energy, School of Technology, Pandit Deendayal Petroleum potential candidates to address lead toxicity, but the resulting
University, Gandhinagar-382 007, Gujarat, India. E-mail: [email protected]. devices yielded lower PCE values than those reported with lead
ac.in; [email protected] halide perovskites.14 The instability of 3D lead halide perovskites
† These authors contributed equally to this work.

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Journal of Materials Chemistry A Review

to moisture, light, and heat is another issue that must be and conductive and to have desirable optoelectronic properties.
addressed.15 To overcome this issue, numerous efforts have been In this context, graphene possesses a high charge carrier
made to enhance the stability of devices, including composi- mobility (106 cm2 V1 s1) and a transmittance of 98%; the
tional engineering,16,17 interface passivation,18,19 encapsulation entire visible light spectrum shows benecial effects on electron
techniques,20 and device structure engineering.21–23 Among these, transport.35,36 Wang et al. demonstrated that the deposition of
passivation techniques appear to be efficient approaches for the a nanocomposite consisting of graphene nanoakes and
fabrication of highly efficient and stable PSCs;24,25 some of these anatase-TiO2 nanoparticles on an FTO layer signicantly
aspects have been addressed in recent reviews.26–28 improved the performance of solar cells (Fig. 2a).37 The
In general, these materials are protected from corrosion by enhancement of the photovoltaic parameters was attributed to
a process called passivation. According to the International the better conductivity and favorable electron transport of the
Union of Pure and Applied Chemistry (IUPAC), when materials graphene layer, as demonstrated by the energy level diagram
become “passive”, they are also less affected by the environ- shown in Fig. 2b. Moreover, the applied low temperature
ment.29 In the process of passivation, a microcoating of fabrication process of the graphene–TiO2 nanocomposite (150

protective material is produced by a chemical reaction with the C) decreases the series resistance and recombination losses at
Published on 05 December 2019. Downloaded on 5/16/2024 8:15:11 AM.

base material. Passivation in PSCs mainly refers to either the FTO/ETL interface.
physical or chemical passivation. In the process of physical Another approach to modify the interlayer between TCO and
passivation, an additional coating on the functional layer ETL is to decrease the work function of the electrode materials.
isolates it from the external environment and improves the A nonconjugated polymer, ethoxylated polyethylenimine (PEIE),
stability of the device. In the case of chemical passivation, the has emerged as an efficient surface modier of various
charge transfer is optimized between various interfaces of PSCs conductive metal oxides, including ITO and FTO (Fig. 2c).38 The
by decreasing the defect trap states of the materials.30–34 A work function of the electrode is changed due to slight electron
typical device mainly contains ve layers, including a trans- transfer from the amine-containing molecules to the electrode
parent conductive oxide (TCO), an electron transport layer surface. Zhou et al. demonstrated the use of a PEIE modier to
(ETL), a light-absorbing perovskite material, a hole transporting decrease the work function of ITO in PSCs, which enhances the
layer (HTL) and a metal electrode (Fig. 1). Different passivation charge transfer between the ETL and ITO layers.39 Specically,
techniques are being used to overcome the main barriers to the the energy level of the PEIE-coated ITO was found to be close to
further commercialization of PSCs. the conduction-band position of the ETL layer, which allows
In this review, we summarize the recent research progress on efficient transport of photogenerated carriers without excessive
the effects of applying passivation agents in different layers in the interface recombination (Fig. 2d).
PSC structure on the overall stability and performance of the
devices; we mainly concentrate on passivation techniques in the 3. Surface engineering of the ETL/
perovskite active layer. Moreover, the challenges and the scope of
passivation techniques for obtaining efficient PSCs are presented.
perovskite interface
The type of material selected as the ETL in a PSC can tune the
2. Surface engineering of the TCO/ photovoltaic performance of the device.40 In general, the ETL
ETL interface plays an important role in the extraction and transportation of
photogenerated carriers in PSCs. Moreover, the thin layer of ETL
The interlayer between the TCO and ETL for the purpose of eliminates electrical shunts between the transparent electrode
surface engineering is required to be signicantly transparent and perovskite layers. Currently, titanium dioxide (TiO2) is most

Fig. 1 Normal structure of a perovskite solar cell consisting of a transparent conductive oxide (TCO), electron transport layer (ETL), light-
absorbing perovskite material, hole transporting layer (HTL) and metal electrode.

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Fig. 2 (a) Cross-sectional SEM image of a planar device employing graphene–TiO2 nanocomposite on FTO. (b) Energy level diagram of a PSC
with an interfacial graphene layer. Reprinted with permission from ref. 37. Copyright 2014 American Chemical Society. (c) Chemical structure of
polyethyleneimine ethoxylate. (d) Energy level diagram of a PSC with PEIE-coated ITO substrate. Reprinted with permission from ref. 38.
Copyright 2012 American Association for the Advancement of Science.

commonly used as an ETL in planar heterojunction solar cells Mg2+,48 Nd3+,49 La3+,50 Er3+,51 and Cl,52 have been reported to
due to its suitable band alignment with the perovskite layer and have positive effects on the overall performance of TiO2-based
good transparency to visible light. However, in the presence of UV PSCs. For example, Xu et al.47 used Ru-doped TiO2 as an ETL to
light, the TiO2 ETL behaves as an excellent photocatalyst, which improve the conductivity of the ETL and enhance the photovol-
decreases the stability of the PSC. In addition, TiO2 contains taic performance of planar heterojunction PSCs. The Ru–TiO2
a high surface defect density and intrinsically low mobility, which layer improves the charge injection and transport properties due
limits the photovoltaic performance of devices.41,42 These issues to its good energy band match with the perovskite layer, which
can be resolved by coating the original TiO2 surface with another decreases the energy loss of the electrons during transportation
ultrathin TiO2 lm using atomic layer deposition (ALD)43 or (Fig. 3a). Consequently, the devices with Ru-doped TiO2 ETLs
chemical bath deposition (CBD).44 Recently, various modica- exhibit superior PCE (up to 15.7%) compared to devices using
tions of the TiO2 surface have been proposed, such as (1) doping a pristine TiO2 layer (13.42%). In other relevant work, a Li-doped
treatment with metal or non-metal ions or (2) passivation using TiO2 ETL was demonstrated to exhibit superior electronic prop-
a fullerene self-assembled monolayer, (3) graphene-based mate- erties by passivating electronic defect states acting as nonradio-
rial, or (4) organic or inorganic self-assembled monolayer; this active recombination centers. Doping with a proper
will be exemplied in this chapter. concentration of ETL enhances the photovoltaic performance of
the device, which is attributed to the decreased selective contact
resistance and the increased charge recombination resistance at
3.1. Surface treatment with metal or non-metal ions the ETL/perovskite interface.
Doping with metal or non-metal elements has been widely
attempted to controllably tune the properties of TiO2, which
subsequently leads to enhanced photovoltaic performance. It was 3.2. Surface passivation using a fullerene self-assembled
demonstrated that doping of TiO2 improves the conduction band monolayer
edge and decreases the charge recombination process at the The charge transfer between the perovskite layer and the ETL
interface. Several metal and non-metal ions, e.g. Y3+,45 Li,46 Ru2+,47 layer can be improved using fullerene C60 and its derivatives,

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Fig. 3 (a) Energy level diagram of the device with Ru-doped TiO2. Reprinted with permission from ref. 47. Copyright 2018 Royal Chemical
Society. (b) Schematic structure of C60-substituted benzoic acid and comparison of current–voltage curves before and after TiO2 modification.
Reprinted with permission from ref. 56. Copyright 2014 American Chemical Society. (c) Device configuration of PSCs incorporated with full-
erenol as the ETL and comparison of current–voltage curves before and after TiO2 modification. Reprinted with permission from ref. 53.
Copyright 2016 American Chemical Society. (d) Chemical structure of PCBB-2CN-2C8 and energy level diagram of the device with an interfacial
layer of PCBB-2CN-2C8 between the TiO2 and MAPbI3. Reprinted with permission from ref. 25. Copyright 2017 Wiley-VCH.

which enhance both the absorption and the electron injection. a C60-substituted benzoic acid self-assembled monolayer
Fullerene self-assembled monolayers (C60SAMs) were success- between the compact TiO2/perovskite interface improves the
fully introduced on the TiO2 surface to decrease the capacitance charge separation and photovoltaic performance. The fullerene-
and trap states of the TiO2. The conducting properties of the modied devices yielded a maximum PCE of 17.3% with signif-
C60SAM-doped ETL can be enhanced by graing different func- icantly decreased hysteresis (Fig. 3b). The carboxylate anchoring
tional groups onto the fullerene cage, e.g. hydroxyl,53 ether,54 groups graed on fullerene passivate the defective trap states in
carboxyl,55,56 ester57 or amino58,59 groups. For example, inserting the TiO2 by chemically binding to the TiO2 surface hydroxyl

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Fig. 4 (a) Schematics of electron generation and extraction at TiO2/perovskite and GQD/TiO2/GQD/perovskite interfaces. Reprinted with
permission from ref. 65. Copyright 2014 American Chemical Society. (b) Schematic of energy levels based on an FTO/SnO2/graphene/CsFAMA-
perovskite/spiro-OMeTAD/Au device. Reprinted with permission from ref. 68. Copyright 2019 Royal Chemical Society. (c) Top-view SEM image
of the rGS structure. (d) Transmittance spectra of the rGS, 2D graphene, and TiO2 films. (e) EQE spectra of the rGS, 2D graphene, and TiO2-based
PSCs. Reprinted with permission from ref. 69. Copyright 2016 American Chemical Society.

groups, which decreases the nonradiative recombination at this to their high charge carrier mobility and high transmittance in
interface. In a similar manner, fullerenol hydroxylated C60 proved the entire visible light spectrum, which are attractive for
to be a promising interfacial material for improving the perfor- photovoltaic applications.61–64 Inserting an ultrathin layer of
mance and stability of PSCs (Fig. 3c).53 This modication facili- GQDs between the perovskite and TiO2 ETL facilitates electron
tates the charge transportation and decreases the interfacial transfer, leading to signicantly enhanced photocurrent and
resistance at the ETL/perovskite interface. Li et al. inserted a tri- efficiency of the corresponding solar cells.65 The GQDs act as
block fullerene derivative, [6,6]-phenyl-C61-butyric acid-dioctyl- a superfast electron tunnel that strongly quenches the PL of the
3,30 -(5-hydroxy-1,3-phenylene)-bis(2-cyanoacrylate) ester (PCBB- perovskite absorber and decreases the electron extraction time
2CN-2C8), as a cathode modication monolayer on TiO2; it from 280 to 90 ps (Fig. 4a). In another relevant study, Tavakoli
possesses dioctyloxy chains and cyano-groups, which minimize et al. introduced monolayer graphene at the interface of the ZnO
its solubility in polar solvents (Fig. 3d).60 The modication of TiO2 ETL and perovskite absorber, which enhanced the carrier
with PCBB-2CN-2C8 decreases the trap states of TiO2 by extraction properties and photovoltaic performance up to
adsorption of electron-withdrawing cyano-groups and C60 carbon 19.8%.66 Importantly, the presence of graphene at the ETL/
balls on the oxygen vacancies and changes the energy band perovskite interface protects the perovskite lm from decom-
alignment; this improves the electron extraction from perovskite position at elevated temperatures and enhances the overall
to the ETL. This surface passivation process signicantly stability of the device. In addition to the above work, the
enhances the values of Voc from 0.99 to 1.06 V and FF from 72.2% instability issue of CH3NH3PbI3 on ZnO nanoparticles was
to 79.1%, leading to improvements in the PCE of up to 20.7%. resolved by the synthesis of a reduced graphene oxide (rGO)/
ZnO nanocomposite layer as an ETL.67 Recently, the combina-
3.3. Surface passivation using graphene-based materials tion of GQDs and SnO2 in an ETL emerged as an effective
strategy for enhancing the electronic properties and perfor-
Recently, research groups have focused on the role of graphene
mance of exible PSCs.68 The optimized GQDs/SnO2 ETL
quantum dots (GQDs) in the interfacial engineering of PSCs due

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Fig. 5 (a) Schematic structure of the TiO2 ETL modified with [HOOC–(CH2)n–NH3]+I. Reprinted with permission from ref. 72. Copyright 2014
American Chemical Society. (b) Schematics of the device structure (left) and the SAM between the SnO2 and perovskite film (where BA is benzoic
acid, PA is 4-pyridine carboxylic acid, CBA is 4-cyanobenzoic acid, ABA is 4-aminobenzoic acid, and C3 is 3-propanoic acid). Reprinted with
permission from ref. 73. Copyright 2017 American Chemical Society. (c) Involvement of R–PhCOOH species as modification materials between
TiO2 and the perovskite layer and schematic of the device structure. (d) Molecular structures of the R–PhCOOH organic ligands. (e) Contact
angles of water on the porous TiO2 layer before and after R–PhCOOH modification. Reprinted with permission from ref. 74. Copyright 2016
Royal Chemical Society. (f) Schematic of the dopamine SAM between the SnO2 ETL and perovskite. (g) J–V curves measured under reverse and
forward voltage scanning of the devices deposited on the SnO2 ETL with or without dopamine SAM modification. Reprinted with permission from
ref. 75. Copyright 2018 American Chemical Society.

exhibits higher electron mobility, better lm coverage and graphene layer (Fig. 4c and d). The results of the TRPL and
better energy level alignment matching compared to the pris- electrochemical impedance spectroscopy (EIS) measurements
tine SnO2 ETL, leading to enhanced charge transfer and sup- revealed that rGS functions as a fast extraction layer for elec-
pressed charge recombination (Fig. 4b). As a result, the trons and decreases the charge-transfer resistance. Moreover,
optimized device yielded PCEs of 19.6% for the rigid substrate the rGS increases the EQE of the device, leading to a higher Jsc
and 17.7% for the exible substrate. and PCE compared with the devices based on a pristine TiO2
Reduced-graphene scaffold (rGS) is a type of three- ETL and a TiO2 layer modied with 2D graphene (Fig. 4e).
dimensional (3D) graphene consisting of a porous structure Additionally, rGS enhances the stability and diminishes the
with a high surface area and good conductivity. The synthesis of hysteresis effect of the PSC.
this material is based on the initial formation of a quasi-core/
shell structure of ZnO/graphene QDs and dissolution of the 3.4. Surface passivation using organic and inorganic self-
ZnO core using an acidic solution, followed by electrophoretic assembled monolayers
deposition of graphene clusters.69 The rGS electrode deposited
The incorporation of a monolayer of functional organic mole-
on the TiO2 ETL shows a porous structure with a larger surface
cules on the ETL surface has emerged as a popular strategy to
area and higher transmittance than the commonly used 2D
model interface carrier dynamics for enhancing the

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Fig. 6 (a) Schematic of the charge transfer mechanism in the MgO-modified TiO2-based PSCs. (b) Band energy diagram of the MgO/TiO2 core–
shell NP-based PSC. (c) Voc and FF depending on the MgO layer thickness controlled by the magnesium methoxide concentration. Reprinted
with permission from ref. 80. Copyright 2015 The Royal Society of Chemistry. (d) Energy level diagram of the device with the structure of FTO/c-
TiO2(CsBr)/perovskite/spiro-OMeTAD/Au. (e) Normalized absorptance at 600 nm wavelength with images of the perovskite film after UV aging
with 523 mW cm2 intensity. (f) The normalized PCE decay of control and CsBr-modified devices upon UV irradiation. Reprinted with permission
from ref. 81. Copyright 2016 The Royal Society of Chemistry.

performance and stability of PSCs.70,71 Due to the ionic nature of the perovskite crystal lattice; this can improve their miscibility
perovskites, they can undergo chemical interactions with with the perovskite substrate, resulting in better crystallization
organic molecules, which can signicantly inuence their of perovskite crystals and decreased surface trap states. As
interfacial optoelectronic properties. For example, Ogomi et al. a result, devices with PA-coated SnO2 layers show signicant
investigated the effects of incorporation of various amino acids improvements compared to devices with a bare SnO2 ETL layer,
with different alkyl chain lengths [HOOC–(CH2)n–NH3]+I (n ¼ yielding a best PCE of 18.77% and Voc of 1.10 V. The effects of
1, 2, and 3) between the ETL/perovskite interface on the the para-position functional group of benzoic acid derivatives
photovoltaic properties of PSCs.72 The carboxylic group of the (R–PhCOOH, where R ¼ Cl, NH2, or NO2) on the device
amino acid molecule passivates the ETL surface via chemical performance were also investigated by Zhu et al. (Fig. 5c and
bonding, while the ammonium group acts as an active site for d).74 It was demonstrated that this interface modication
the perovskite grain growth (Fig. 5a). The presence of these changes the charge transfer properties and recombination rate
monolayers improves the perovskite lm quality and carrier at the interface without affecting the crystal structure and
extraction while decreasing the trap states and carrier recom- morphology of the perovskite lms. Contact angle tests conrm
bination at the ETL/perovskite interface. In a similar manner, the successful deposition of R–PhCOOH molecules on the TiO2
Zuo et al. investigated the effects of the chemical interaction of surface (Fig. 5e). The modication of TiO2 with 4-chloro benzoic
aromatic acids with different functional groups, i.e. benzoic acid has been reported to afford superior improvements in
acid (BA), 4-pyridinecarboxylic acid (PA), 3-aminopropanoic device performance, while passivation with other compounds
acid (C3), 4-aminobenzoic acid (ABA), and 4-cyanobenzoic acid leads to poorer charge transfer properties and heavier
(CBA), deposited on the SnO2 surface with the perovskite layer recombination.
(Fig. 5b).73 It was found that the best charge transfer at the In addition to incorporation of a monolayer of carboxylate-
perovskite/SnO2 interface was observed via deposition of the PA based organic molecules, decorating the ETL surface with
monolayer due to its strong chemical binding with the perov- organic molecules bearing appended hydroxides as anchoring
skite material. The pyridine nitrogen atom tends to form groups has also emerged as an efficient method to modify the
hydrogen-bonding interactions with the methylamine groups of ETL/perovskite interface and improve device performance.75

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Fig. 7 Schematic of the formation of CuI islands on the TiO2 compact layer and subsequent deposition of the perovskite layer. Notably, the
electrons from the perovskite move to the exposed TiO2 surface and cannot move to the CuI islands because of their high conduction band
energy level. Reprinted with permission from ref. 82. Copyright 2017 Wiley-VCH.

Dopamine, which contains two functional hydroxyl groups and terminal amino group regulates the growth of perovskite crys-
one amino group, has been introduced as an interfacial modi- tals by hydrogen bonding interactions (N–H/I). This modi-
cation layer on top of the SnO2 surface (Fig. 5f). It was found cation resulted in better carrier transport and low charge
that the hydroxyl group anchors to the SnO2 surface, while the recombination at the SnO2/perovskite interface. Consequently,

Fig. 8 Top-view SEM images of MAPbI3 films (a) without and (b) with 5% Pb(SCN)2 additive deposited on SnO2 ETL. Cross sectional SEM images
of the completed devices using MAPbI3 (c) without and (d) with 5% Pb(SCN)2 additive. Reprinted with permission from ref. 112. Copyright 2016
Wiley-VCH.

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Fig. 9 Top-view SEM images of FA0.8Cs0.2Pb(I0.7Br0.3)3 perovskite thin films: (a) reference; (b) no Pb(SCN)2 additive with solvent annealing; (c)
with 1.0 mol% Pb(SCN)2 additive but no solvent annealing; and (d) with combined 1.0 mol% Pb(SCN)2 additive and solvent annealing. (e) Cross-
sectional SEM image of the device with the perovskite layer synthesized by the combined 1.0 mol% Pb(SCN)2 additive and solvent annealing
process. The white grains in (c) are PbI2 precipitates. Reprinted with permission from ref. 115. Copyright 2017 American Chemical Society.

the device with a dopamine-treated ETL exhibited enhanced enhancing the Voc and FF of MgO-coated TiO2-based PSCs as
stability with a high efficiency of 16.87% compared to the device a result of changes in the band energy diagram (Fig. 6b and c).
without ETL modication (Fig. 5g). Li et al. demonstrated that the deposition of CsBr enhances the
Due to the reported instability and degradation of organic electron transfer rate from the perovskite to the ETL, leading to
molecules under light and heat,76 the modication of the ETL signicant improvement of the PCE up to 15.3% compared to
surface with high-temperature stable inorganic compounds was the control devices with an average efficiency of 11.5%.81 The
proposed to improve the electron extraction ability to obtain CsBr modication decreases the work function of TiO2 from
PSCs with high PCE values without J–V hysteresis. Introducing 4.07 to 3.90 eV, which is favorable for electron injection
a thin layer of insulator inorganic material at the ETL/perovskite (Fig. 6d). The authors also demonstrated that this modication
interface suppresses the recombination processes due to inhi- decreased the photocatalytic properties of TiO2 by decreasing
bition of the back ow of electrons in the presence of the the electronic defect density at the ETL/perovskite interface and
insulator interlayer and the passivation of surface trap states. subsequently improved the UV stability of the perovskite lms
Importantly, the thickness of the interfacial layer on the ETL and devices (Fig. 6e). The PCE of the device subjected to UV
must be carefully controlled to ensure minimal loss of charge irradiation retains more than 70% of its initial value aer
injection efficiency. Several insulators, such as La2O3,77 Al2O3,78 20 min; the retention was nearly zero for the control device
ZrO2,79 MgO,80 and CsBr,81 have been widely investigated as (Fig. 6f). Interestingly, microscopic analysis revealed that CsBr
ultrathin interfacial modiers for enhancing PSC performance. forms clusters on the c-TiO2 surface rather than a continuous
For example, the modication of the TiO2 ETL with MgO buffer layer lm. Thus, it was suggested that the Cs ions inhibit
improves the electron lifetime and subsequently retards the the photocatalytically active sites on the TiO2 and assist in the
electron/hole recombination at the TiO2/CH3NH3PbI3 interface formation of less defective perovskite at this interface.
(Fig. 6a).80 The longer recombination time was responsible for

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Fig. 10 Top-view SEM images of MAPbI3 films with different concentrations of KSCN: (a) 0 mol%, (b) 0.5 mol%, (c) 1 mol%, (d) 2 mol%, and (e)
3 mol%; (f)–(j) are the corresponding statistical distributions of the MAPbI3 grain size. J–V curves of the PSCs with and without 1 mol% KSCN
tested at a scan rate of 50 mV s1 under 1 sun AM 1.5 G. (k) EQE and integrated Jsc spectra of the PSCs with and without 1 mol% KSCN (l). The
steady-state output of the PSCs with (m) and without (n) 1 mol% KSCN measured at the maximum power point under 1 sun AM 1.5 G, respectively.
Reprinted with permission from ref. 123. Copyright 2019 The Royal Society of Chemistry.

In a similar manner, the TiO2 ETL was partially coated with grain boundaries (GBs) in the perovskite lms.87 Grain bound-
CuI via a simple one-step spin-coating process and demon- aries behave as pathways for ion migration and centralized
strated highly effective electron extraction ability.82 The p-type areas of electronic trap states,88–90 which decrease the charge
character of the deposited islands of CuI on the TiO2 surface transportation and carrier lifetime.91 Moreover, ion migration at
changed the energy band diagram. The conduction band of CuI- the GBs in perovskite lms is supposed to cause current–voltage
modied TiO2 increased to 3.93 eV from the value of 4.13 eV hysteresis.92 Thus, in order to develop hysteresis-free and high-
for unmodied TiO2, which results in barrier-free contact with efficiency PSCs, it is essential to decrease the number of GBs by
perovskite and increased Voc (Fig. 7). It was found that the increasing the grain size of the perovskite crystals.93,94
polarity of the CuI-modied TiO2 surface can pull electrons There are two different methods of thin lm perovskite
towards the ETL/perovskite interface with very low recombina- modication, namely physical and chemical. Blowing-gas,95
tion. The optimized CuI-modied TiO2-based device shows vacuum-ash,96 hot-casting,97 solvent annealing98 and non-
a high efficiency of 19.0% and negligible hysteresis. wetting substrates99 are physical modication techniques. In
turn, methods such as changing the chemistry of the precursor
solutions100–102 and controlling the nucleation and growth by
4. Surface engineering of the modication of the underlying substrates103 are examples of
perovskite/HTL interface chemical approaches; these will be exemplied in the following
subchapters.
Elegant control of the optoelectronic properties of metal halide
perovskites is required to achieve high-efficiency devices.83 The
existence of pinholes and incomplete surface coverage on 4.1. Thiocyanate additives
perovskite lms can decrease the light absorption and shunt The qualities of the perovskite absorber layer, such as surface
resistance. Moreover, a high density of undesirable defects roughness, grain size, and uniform coverage, play an important
decreases the charge collection efficiency and increases the role in the PV performance of PSCs.104 Organohalide lead
charge recombination. The anti-solvent one-step dripping perovskites have high defect tolerance but are not defect
method has been proposed to decrease these effects and impervious.105 It was reported that different thiocyanate ions
prepare highly compact and uniform lms.84–86 can control the defect tolerance and charge carrier trapping and
The best performing PSCs still lag behind the theoretical decrease the GBs of perovskite thin lms.106 Thiocyanate ions
limit of Shockley–Queisser efficiency for a single junction solar (SCN) were initially used to increase the grain size and
cell, possibly due to the electronic defects and high density of enhance the stability of MAPbI3 PSCs against humidity by

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Fig. 11 (a) Control MAPbI3 film and films treated with different concentrations of GUTS/IPA solution: (b) 2 mg mL1, (c) 4 mg mL1, (d) 6 mg mL1,
(e) 8 mg mL1, (f) 10 mg mL1. (g) J–V curves of MAPbI3 PSCs with and without GUTS-4 post-treatment under reverse and forward bias. (h)
Moisture stability of the MAPbI3 cell (black curve) and the GUTS-4-treated MAPbI3 cell (red curve). The solar cells were stored in a desiccator with
a relative humidity of 33% in the dark. Reprinted with permission from ref. 93. Copyright 2017 Elsevier.

introducing Pb(SCN)2 in the perovskite precursor solution. The photovoltaic performance, with a PCE up to 18.42% and negli-
perovskite structure was assumed to be composed of gible hysteresis.
MAPb(SCN)2I or MAPbI3x(SCN)x.107,108 Further computational In a similar manner, Chiang et al. investigated the inuence of
and single-crystalline investigations revealed that SCN ion is the SCN ion on the morphological and optoelectronic properties
not readily incorporated into the 3D MAPbI3 crystal structure of FA0.9Cs0.1PbI3 perovskite thin lms.114 It was demonstrated that
but can form 2D layered structures with the formula MA2- the addition of 5 and 10 mol% Pb(SCN)2 additive signicantly
Pb(SCN)2I2.109–111 In turn, the addition of a small amount of enlarges the grain size of perovskite lms and increases the carrier
Pb(SCN)2 to the MAPbI3 precursor solution can remarkably lifetime. In turn, Yu et al. studied the effects of Pb(SCN)2 additive
improve the crystallinity and grain size of the perovskite thin on the performance of wide bandgap mixed-cation and mixed-
lms.112,113 The SCN ions were assumed to release gases from halide FA0.8Cs0.2Pb(I0.7Br0.3)3 perovskite solar cells.115 Although
the perovskite lm in the form of methylamine (CH3NH2) and the grain size increases as the concentration of Pb(SCN)2 additive
HSCN during the annealing process. The release of CH3NH2 gas increases, the concomitant formation of excess residual PbI2
during the perovskite formation improves the crystallinity and nanorods on the perovskite lms deteriorates the device perfor-
increases the grain size of the lms (Fig. 8). The accompanying mance. Surprisingly, there was no notable change in the bandgap
formation of excess PbI2 passivates the defects in the perovskite of the FA0.8Cs0.2Pb(I0.7Br0.3)3 thin lm. It was found that the
grain boundaries, leading to a lower recombination rate. Large combination of 1.0 mol% Pb(SCN)2 additive and the solvent
perovskite crystals enhance the minority carrier lifetime, which annealing procedure during thin lm formation led to signi-
subsequently leads to overall improvement of the device cantly increased grain sizes (from 66  24 to 1036  317 nm)
performance of PSCs. It was found that a device based on without formation of excessive PbI2 (Fig. 9), and the mean carrier
MAPbI3 with a 5% Pb(SCN)2 additive exhibited the best lifetime showed a 3-fold growth from 330 ns to over 1000 ns. The
average PCE of the FA0.8Cs0.2Pb(I0.7Br0.3)3-based PSCs increased

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Fig. 12 Consequences of excess PbI2 in perovskite films related to possible energy alignments suggested in the literature and an artistic
illustration of different grain boundary characters as a function of the overall stoichiometry. (a) PbI2 as a passivation layer at the back contact. (b)
PbI2 as a passivation layer next to the hole-selective layer. (c) PbI2 as an electron blocking layer next to the back contact. (d) PbI2 as a charge
carrier barrier between perovskite grains. Reprinted with permission from ref. 129. Copyright 2016 American Chemical Society. (e) Proposed
mechanism for PbI2 passivation in CH3NH3PbI3 films. The perovskite/HTL interface is described on the bottom right; the presence of PbI2
changes the grain-to-grain boundary bending from downward to upward, which helps decrease recombination between the electrons from
perovskite and the holes from HTL. Reprinted with permission from ref. 133. Copyright 2014 American Chemical Society.

from 13.44  0.48 to 16.46  0.37 using 1.0 mol% Pb(SCN)2 iodide (KI) and PbI2 passivated the perovskite layer. As a result,
additive and a solvent annealing procedure. In other work, the the PCE of MAPbI3 PSCs increased from 14.72% to 19.12%
addition of Pb(SCN)2 to a triple-cation mixed-halide perovskite, using 1.0 mol% additive KSCN under forward bias with negli-
FA0.7MA0.2Cs0.1Pb(I5/6Br1/6)3, not only improved the crystallinity gible hysteresis (Fig. 10).
and optical absorption of the perovskite but also hindered the Other relevant work demonstrated that treatment of the
formation of morphological defects and non-radiative recombi- MAPbI3 surface with guanidinium thiocyanate (GUTS) converts
nation.116 Moreover, the Pb(SCN)2-treated perovskite lm exhibited its nanometer-scale grains into a micron-sized grain lm.93 The
remarkably high moisture and thermal stabilities, leading to grain size of the MAPbI3 lms increases proportionally with the
a high PCE of 14.09% for planar-solar cells with alleviated concentration of GUTS, decreasing the number of barriers (GBs)
hysteresis. for charge transport between the anode and cathode in PSCs
In addition to SCN ions, the cations used in the fabrication (Fig. 11a–f). The remarkable change in morphology is due to the
process play an important role in the quality of perovskite initial stages of the Ostwald-type ripening mechanism.124
lms.117–119 The introduction of alkali metal ions (Na+ or K+) was During this process, when GUTS/IPA solution is added to the
stated to effectively improve the growth of perovskite lms with surface of the MAPbI3 lm, less stable small crystals of MAPbI3
fewer GBs and trap states.120–122 Zhang et al. introduced potas- with high surface energies dissolve partially into the IPA and
sium thiocyanate (KSCN) into the perovskite precursor solution transfer their mass for growth of large, stable crystals. When
and fabricated hysteresis-free PSCs with high photovoltaic comparing I and SCN anions, the SCN ion has stronger
performance.123 The grain size of the MAPbI3 perovskite lm interaction with Pb2+; thus, the Ostwald ripening process is very
increases with increasing KSCN content due to the positive effective for GUTS/IPA treatment.125 The concentration of the
synergistic effect of SCN and K+ ions. In this process, CH3NH2 GUTS precursor plays a key role in the optical properties,
and HSCN gases escaped and small amounts of potassium surface potential, crystal structure and morphology of the

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Fig. 14 (a) Structure of mesoporous TiO2 with a mixed halide perov-


skite absorber. (b) Schematic band diagram near the GBs in Br-con-
taining MAPb(I0.88Br0.12)3 thin films. Reprinted with permission from
ref. 165. Copyright 2015 American Chemical Society.

Fig. 13 SEM images of (a) MAPbI3, (b) MAPbI2.95Cl0.05, (c) MAPbI2.67- vapor130–132 or thermal treatment,133–135 a nonstoichiometric
Cl0.33 and (d) MAPbI2Cl1 perovskite films annealed for 5 min at 100  C.
perovskite precursor solution containing excess PbI2 (ref. 127,
The scale bar is 500 nm. Reprinted with permission from ref. 152.
Copyright 2017 Wiley-VCH. (e) Schematic of perovskite films fabri- 129, 136–138) and incomplete reaction of PbI2 through a vapor
cated by the antisolvent method on SnO2-coated FTO glass before reaction method.139–141 The advantageous effect of PbI2 is real-
and after treatment with FACl and Cl-based adamantane additives. ized by balancing the passivation of the perovskite lm with the
Reprinted with permission from ref. 155. Copyright 2019 Wiley-VCH. decrease of the electron transfer. It was reported that upon
passivation by PbI2, the carrier lifetime increased and the
charge carrier trap density of TiO2 decreased from 1019 cm3 to
perovskite lm. The PCE of MAPbI3 PSCs was increased from 1016 cm3.142–144
12.7% to 15.2% using a 4 mg ml1 concentration of GUTS/IPA. Various possible passivation mechanisms of PbI2 were
Moreover, devices with optimized GUTS additive showed better proposed based on the interface between the perovskite lm
moisture stability and less-pronounced hysteresis in the J–V and PbI2 phase.129 One hypothesis suggests that the band edge
curve than untreated PSCs (Fig. 11g and h). matching between TiO2, PbI2, and the perovskite or surface
passivation are responsible for the decreased hole recombina-
tion (Fig. 12a). Another hypothesis is that PbI2 at the perovskite/
4.2. Using excess amounts of PbI2 or MAI additives HTL interface facilitates hole injection and decreases the
Differences in the stoichiometry of the perovskite precursors in recombination rate (Fig. 11b). If the energy band alignment is
solution were found to play a positive role in decreasing the mismatched or the PbI2 layer is too thick, it may block the
recombination at the GBs and improving the charge carrier carriers and thus insulate individual grains (Fig. 12c and d).
transfer. It was observed that a small excess of PbI2 can decrease PbI2 phase may also control the stoichiometry of the perovskite
defect recombination in MAPbI3 (ref. 101, 126 and 127) or composition at the GBs. The inner composition of perovskite
mixed-cation and mixed-halide perovskite layers.128,129 There are grains may be insensitive to small changes in the overall stoi-
three techniques to passivate perovskite GBs using PbI2 layers. chiometry. Consequently, the GBs must be highly sensitive to
They are based on self-induced formation of PbI2 by water the overall composition. This can affect the dangling bonds,

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Fig. 15 (a) Illustration of the roles of alkyl-halide additives during perovskite crystallization. Reprinted with permission from ref. 170. Copyright
2015 The Royal Society of Chemistry. (b) SEM images of the perovskite thin films fabricated with different concentrations of the ACN additive. (c)
Size distribution of the PbI2–DMF particles. (d) Mechanism for the formation of the PbI2–DMF cluster manipulated by the ACN additive.
Reproduced with permission from ref. 171. Copyright 2016 Wiley-VCH.

doping, ion migration and defect states. Yang's group reported confocal PL microscopy revealed that excess MAI enhances the
that PbI2 minimizes the number of trapping states by lling the PL intensities and carrier recombination lifetimes in both the
perovskite GBs and changing the grain-to-grain boundary- grain interiors and GBs.146
bending from downward to upward, thus decreasing the
recombination between holes and electrons from the HTL and
4.3. Using chloride and bromide additives
the perovskite, respectively (Fig. 12e).133 If too much PbI2 is
present in the GBs, it can act as an insulating layer rather than The PCE and stability of MAPbI3 PSCs can be enhanced by
a passivation layer. Moreover, it was demonstrated that the substitution of various amounts of iodine with chloride or
presence of excess PbI2 results in faster degradation of the bromide ions.147–151 Chen et al. reported that the introduction of
perovskite layer upon exposure to illumination and humidity MACl into the perovskite lms can improve the grain size up to
compared to perovskite lms without excess PbI2.137 Thus, 1 mm.151 The Cl incorporation does not affect the carrier
optimization of the deposition process for perovskite lms with transportation in the perovskite lm and improves the PV
excess PbI2 should be carefully undertaken, and the effects of performance of the device. Using a 1 : 10 weight ratio of MACl/
the decomposition of the perovskite layer should be considered. MAI, the PCE of the resulting MAPbI3xClx PSC increased from
Similar to the effect of excess PbI2, the GBs can be passivated 14.12% to 17.91%. A series of MAPbI3xClx perovskites with
by excess methylammonium iodide (MAI).145,146 The excess MAI various Cl contents was also prepared through gas/solid reac-
can modify the grain surface of the perovskite lms by forming tions between MA gas and HPbI3xClx (x ¼ 0–1).152 Low Cl
self-assembled GBs on the MAPbI3 lm, leading to improved PV doping was found to signicantly enhance the grain-size growth
performance and decreased hysteresis of MAPbI3 PSCs. The c- of MAPbI3xClx crystals and improve the PV performance. In
AFM images of pure MAPbI3 and modied perovskite with turn, for Cl contents higher than 0.1 (x > 0.1), a separate
0.06% excess MAI showed increased conductivity due to MAI perovskite phase of MAPbCl3 formed, which inhibits the elec-
passivation. The MAPbI3 PSCs with a 0.6% excess of MAI tron transfer and deteriorates the photovoltaic performance
showed the best efficiency, up to 20.4%, measured under (Fig. 13a–d). Recently, Li et al. investigated the effects of the
reverse scan.145 The analysis of MAI-rich perovskite lms with MACl/MAI ratio (0 : 1, 0.5 : 1, 1 : 1 and 2 : 1) on the morphology
of perovskite lms and the interfacial charge transfer dynamics

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Fig. 16 (a) SEM images of PbI2 films prepared from PbI2/DMF solutions containing various amounts of H2O additive. Reprinted with permission
from ref. 174. Copyright 2015 Royal Society of Chemistry. (b) Device structure and schematic of the incorporation of water additive into DMF-
based perovskite precursor solutions. (c) Device stabilities of DMF and DMF + 2% H2O-based PSCs under ambient conditions. Reprinted with
permission from ref. 176. Copyright 2015 Wiley-VCH.

of devices with both planar and mesoporous architectures.153 It composition because the Cl ions leave the perovskite lm
was found that chloride doping with a 2 : 1 ratio leads to larger during the annealing process in the form of MACl, which
grain size and faster interfacial charge injection rates in the improves the stability of PSC devices as well. The combined
planar architecture compared to the mesoporous architecture, effects of bulk modication and surface passivation of the
leading to signicant improvement of the PV performance. The perovskite lm with Cl-based adamantane resulted in a high
introduction of MACl into the perovskite precursor solution PCE of 21.2% with improved stability.
also appears to be a convenient method to enlarge the grain size The addition of a small amount of guanidinium chloride
of the triple A-cation (MA/FA/Cs) perovskite composition.154 In (GACl) to a MAPbI3 precursor solution was also found to play
general, the triple A-cation perovskite lms are composed of a positive role in the optoelectronic properties of perovskite
small grains (200 nm) because the presence of Cs ions leads to lms and the enhancement of the PCE.156 In particular, the
fast nucleation of perovskite crystals. The modication of triple GACl-based perovskite lm exhibited enhanced PL intensity
A-cation perovskite with MACl improved the crystallinity as well and charge carrier lifetime compared to the pristine MAPbI3
as the grain size of the lm up to 1 mm. It was found that MACl lm, indicating decreased trap density in the lm. The authors
does not affect the absorption or photoluminescence properties reported that GA cation is not incorporated into the perovskite
of perovskite lms; its role is to aid the formation and growth of crystal lattice due to the larger ion radius but rather resides at
crystals rather than their incorporation in the perovskite lattice. the grain boundaries and passivates the under-coordinated
Formamidinium chloride (FACl) has also been used as an iodine species. Notably, further solid-state NMR studies
alternative chlorine source to improve the crystallinity and provided atomic-level evidence that GA cation can be directly
grain size of perovskite.155 The addition of FACl to the precursor incorporated into the MAPbI3 crystal lattice.157 Wang et al.
solution removes the small-grained perovskite capping layer systematically studied the effects of the various amine hydro-
and suppresses the formation of bulk and surface defects, chloride additives with different sizes and space structures, i.e.
providing a perovskite lm with enhanced crystallinity and 2,2,2-triuoroethylamine hydrochloride, benzenamine hydro-
large grain sizes of over 1 mm (Fig. 13e). Moreover, FACl helps chloride, 3-chloropropylamine hydrochloride, and diethyl-
replace the MA cations with FA cations in the perovskite amine hydrochloride, on the MAPbI3 perovskite lm-forming

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Fig. 17 (a) Schematic of the electrostatic interaction between an


under-coordinated halide ion on the perovskite surface and a hole
injected in spiro-OMeTAD. (b) Schematic of the electrostatic screening
of the halide ion via halogen bond complexation of iodopenta-
fluorobenzene (IPFB) on the perovskite surface, which can stop trap-
ping of the holes. Reproduced with permission from ref. 177. Copyright
2014, American Chemical Society. (c) Loss of iodine at the surface of
the perovskite leads to vacancy sites (hollow boxes) and a resulting net
positive charge residing on the Pb atom (shown in green). Photo-
generated electrons can then fall into this Coulomb trap site, thus
neutralizing the charge and stabilizing the crystal. (d) Schematic of the
donation of thiophene electron density to Pb ions to form coordinate
or dative covalent bonds, effectively neutralizing the excess positive
charge in the crystal. Reproduced with permission from ref. 178. Fig. 18 (a) Molecular structure of IDIC. (b) Schematic of the interaction
Copyright 2014, American Chemical Society. of the p-conjugated Lewis base and Pb ions. (c) Diagram depicting the
formation of a dative covalent bond between two atoms and passiv-
ation of trap states. Reprinted with permission from ref. 180. Copyright
2017 Wiley-VCH.
process.158 These organic cations enhanced the crystallinity and
grain size of the perovskite lms and, consequently, the
performance of the solar cells.
potential in the production of high-quality perovskite lms for
To optimize the PV performance of PSCs, the electron
low-cost and high-performance devices.
injection and carrier recombination must be optimized. It was
found that the partial substitution of iodide with bromide ions
in the perovskite composition may also increase the grain 4.4. Using solvent additives
size,159–161 optimize the crystallization rate162 and tune the band To decrease the intrinsic defect density in perovskite lms,
gap from 1.5 to 2.2 eV.147,163,164 Kim et al. studied the effects of various solvent additives are oen added to the precursor
the Br content on the local electrical properties of the solution.167,168 The crystallization rate and growth of perovskite
MAPb(I1xBrx)3 perovskite thin lms using Kelvin probe force crystals was found to be controlled by incorporating bidentate
microscopy (KPFM) and conductive atomic force microscopy (c- halogenated additives into the precursor solution. For example,
AFM).165 It was observed that a region with highly positive 1,8-diiodooctane (DIO) encourages homogenous nucleation
charge appeared in the GBs, and the local current (<50 pA) ows and crystallization of MAPbI3xClx perovskite lms, which
through most of the grains for the MAPb(I1xBrx)3 (x ¼ 0.12) facilitates the charge transfer between the charge transporting
perovskite lms. Remarkable potential barrier bending occurs interlayers and the perovskite absorber.169 This additive was
at the GBs, and the positively charged GBs in the Br-passivated stated to temporarily chelate with Pb2+ during the crystal growth
perovskite thin lms can produce downward energy band and modulate the crystallization kinetics. In a similar manner,
bending. Due to the charged GBs, the electrons move towards bidentate halogenated additives with different alkyl chain
the TiO2 side and holes are attracted to the HTL side (Fig. 14). lengths and end-groups, i.e. 1,4-diiodobutane (1,4-DIB), 1,10-
Thus, recombination of charges between the ETL and HTL is diiodinedecane (1,10-DID), 1,4-dibromobutane (1,4-DBrB), and
suppressed, and the charge carriers are separated.166 1,4-dichlorobutane (1,4-DClB), enhanced the crystallization and
This work demonstrates that the approach of using organic substrate coverage of perovskite thin lms on PEDOT:PSS
amine hydrochloride/hydrobromide additives has great substrates.170 The changes in crystallization dynamics induced
by alkyl halides were attributed to the cooperative effects of

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Fig. 19 (a) Schematic showing the cross-linking process of the fluoro-silane layer on perovskite films. Reprinted with permission from ref. 183.
Copyright 2016 Wiley-VCH. (b) Images of unmodified FAPbI3, A-FAPbI3, BA-FAPbI3 and PA-FAPbI3 films under different durations (fresh, 3 d, 4
months) of exposure under 50  5 RH% air. (c) Moisture stability of unmodified FAPbI3 and BA-FAPbI3 devices under air exposure (50  5 RH%).
“Half cells” means that only the BA-FAPbI3 films on the TiO2/FTO substrates were exposed to air and that the spiro-MeOTAD and Au layers were
deposited onto the films before the J–V measurements. Reprinted with permission from ref. 188. Copyright 2016 Wiley-VCH.

modulated solvent–solute interactions between the alkyl grain size (Fig. 15d). Similarly, the proper addition of weakly
halides and Pb2+ and the cleaved C–X (X ¼ Cl, Br, I) bonds coordinating isopropanol (IPA) to a precursor solution con-
during thermal annealing (Fig. 15a). The grain sizes of the taining MAI/PbI2 resulted in the formation of uniform perov-
perovskite thin lms and overall device performance were skite lms with low defect densities.172 In addition, the device
found to be signicantly dependent on how readily the C–X with IPA additive exhibited better photovoltaic performance
bond is cleaved, and the device made from the solution con- and higher stability against moisture compared with the refer-
taining 1% 1,4-DIB showed the best photovoltaic performance. ence material.
Li et al. demonstrated that the introduction of weakly coor- Moisture is known to be a critical factor for perovskite
dinating solvent molecules, e.g. acetonitrile (ACN), into the stability because water can decompose the structure of perov-
PbI2/DMF solution effectively enhances the grain morphology skite into its starting precursors.173 However, the controlled
and roughness of MAPbI3 perovskite thin lms.171 An optimized addition of water to the precursor solution can assist the
ratio of ACN/PbI2 successfully affects the interaction between nucleation and grain growth of perovskite lms. The use of H2O
PbI2 and DMF and modies the nucleation dynamics, leading to as a solvent additive in PbI2/DMF precursor solution resulted in
the formation of large grains. The grain size of the perovskite the formation of good quality PbI2 lms on PEDOT:PSS-coated
lms was found to increase with increasing ACN concentration ITO.174 As shown in Fig. 16a, full-coverage PbI2 lms were ob-
(Fig. 15b). As revealed by dynamic light scattering (DLS) anal- tained only when the PbI2/DMF solution contained 2 to 3 wt%
ysis, the radius of the PbI2–DMF particles decreases with H2O. Further deposition of MAI on the water-modied PbI2
increasing ACN concentration due to partial replacement of layer led to the crystallization of a smooth, highly crystalline
DMF molecules by ACN and concomitant formation of ACN– and compact perovskite MAPbI3 lm with improved light
PbI2–DMF adducts, which are much smaller then PbI2–DMF absorption and charge carrier transportation. As a result,
particles (Fig. 15c). The low boiling point of ACN generates impressive PCEs of 18% were observed for the inverted devices
pores in the PbI2 lm during the annealing process; these pores fabricated using 2% H2O additive. Further improvement in
can act as nucleation centers for the newly formed perovskite. performance was achieved by adding controlled amounts of
Subsequent deposition of MAI on these nucleation centers H2O to both the PbI2/DMF and MAI/IPA precursor solutions and
favors the formation of a smooth perovskite lm with a large DMF vapour post-treatment.175 This synergistic strategy resulted

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(IPFB) was tested as a Lewis acid to passivate excess iodine ions


on the surface of MAPbI3xClx lms (Fig. 17a).177 Under-
coordinated iodide anions may serve as hole-traps at the
perovskite/HTL interface in PSCs (Fig. 17b). These hole-traps
lead to faster recombination of charge carriers and decreased
charge density within the perovskite/HTL interface. The use of
IPFB resolved this issue by screening the electrostatic charge
from the under-coordinated halide ions, resulting in decreased
non-radiative recombination and enhanced photovoltaic
performance. Other work demonstrated that treatment of
MAPbI3xClx lms with Lewis bases such as thiophene or
pyridine can also signicantly decrease the rate of nonradiative
recombination in perovskite lms (Fig. 17c).178 During the
annealing process, the halide and methylammonium ions can
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leave the perovskite lm, forming under-coordinated Pb atoms


that act as electronic trap states both on the crystal surface and
at the grain boundaries. To neutralize the excess positive
charges in the perovskite crystal, the selected thiophene or
pyridine molecules donate electron density to the under-
coordinated Pb ions, forming coordination bonds (Fig. 17d). As
a result, the efficiencies of MAPbI3xClx PSCs were enhanced
from 13% to 15.3% and 16.5% aer thiophene and pyridine
treatments, respectively.
Wen et al. systemically investigated the relationship between
the device efficiency and stability and the type of employed 3-
alkylthiophene derivative (thiophene, 3-methylthiophene, 3-
Fig. 20 PL enhancement of large (a) and small (b) perovskite crystals in ethylthiophene, 3-butylthiophene, 3-hexylthiphene and 3-
ambient air and in argon (lex ¼ 514 nm, 1 W cm2). Phase I: dodecylthiophene).179 These molecules contain delocalized
enhancement due to consumption of the oxygen dissolved in the
conjugated p systems and hydrophobic alkyl groups that can
material (identical in air and in argon). Phase II: further PL enhance-
ment, which requires oxygen diffusion from the surface to the bulk enhance the charge transfer and collection at the perovskite/
(does not occur in argon). (c) Normalized PL kinetics measured in the HTL interface and protect the bulk perovskite from humidity.
as-prepared micrometer-sized crystals and scratched area (<100 nm It was found that the 3-hexylthiphene post-treatment signi-
grains) of the sample in argon (lex ¼ 640 nm, repetition rate 2.5 MHz, cantly enhanced both the stability and performance of Cs0.05-
0.1 W cm2, IRF width z 100 ps). Reproduced with permission from
FA0.81MA0.14PbBr0.45I2.55-based PSCs. Another example of a p-
ref. 189. Copyright 2015, American Chemical Society.
conjugated Lewis base, indacenodithiophene end-capped with
1.1-dicyanomethylene-3-indanone (IDIC), has also been shown
to be effective in passivating undercoordinated Pb ions on the
in crystallization of a high-quality 500 nm thick MAPbI3 layer
MAPbI3 surface (Fig. 18a).180 Due to its n-type semiconducting
with horizontal grain sizes up to 3 mm. The optimized inverted
properties, IDIC simultaneously enhances the charge transfer
device yielded a very high PCE of 20.1% and an FF of 0.83.
in perovskite lms, while the Lewis base end groups (carbonyl
Incorporating a proper amount of water into a DMF-based
and cyano groups) of IDIC passivate the traps (Fig. 18b and c).
perovskite precursor solution containing MAI and PbCl2 also
Hence, MAPbI3/IDIC-based solar cells yielded stabilized PCEs of
improved the crystallization of perovskite thin lms with good
up to 19.5% with hysteresis-free and stable outputs compared
coverage and smooth morphologies (Fig. 16b).176 Systematic
with reference devices without IDIC-based passivation. This
analysis of the modied perovskite lms indicated that the 2%
study opens up a route to design new p-conjugated Lewis bases
H2O additive-based perovskite sample afforded a more contin-
by combining various organic p-conjugated structures (e.g.,
uous and large-grained perovskite lm. The higher vapor pres-
aromatic fused rings, oligothiophenes) and Lewis base
sure and lower boiling point of H2O aided the formation of large
substituent groups (e.g., thiocyanato, sulydryl, carbonyl) to
crystals. Consequently, the optimized water additive-based
achieve defect passivation and further improve both the effi-
device showed a high PCE of 16.06% and improved cell
ciency and stability of PSCs.181,182
stability under ambient conditions compared with the reference
cell (Fig. 16c).
4.6. Hydrophobic additives
4.5. Lewis acid/base additives Some organic insulating polymers consisting of hydrophobic
An efficient strategy to passivate surface defect states on groups such as poly(ethylene terephthalate) (PET), Teon,183,184
perovskite lms is the use of Lewis acids or Lewis bases to polystyrene (PS),183 polyvinylidene-triuoroethylene copolymer
passivate surface traps. For example, iodopentauorobenzene (PVDF-TrFE), poly(4-vinylpyridine) (PVP)183,185 and even ionic

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Fig. 21 (a) Schematic showing the procedures to deposit a carbon electrode and induce interfacial growth of a 2D perovskite layer. (b) Cross-
sectional field emission-scanning electron microscopy (FE-SEM) image of the fabricated PSC. (c) Energy band diagram of each component in the
fabricated PSC showing the separation and transport of photo-generated carriers. Reprinted with permission from ref. 203. Copyright 2018 Royal
Society of Chemistry.

liquids186 can diffuse into the GBs and cover the surface of the observed that only benzylamine can stabilize the perovskite
perovskite thin lms. These polymers deposited on the perov- lms for more than four months in moist air (Fig. 19b). The
skite lms form a ultrathin tunneling layer that suppresses benzylamine-modied device showed a longer carrier lifetime
charge recombination by separating the excess electrons and and improved performance and stability under air exposure
holes in the electron transport layer and perovskite layer.183 (Fig. 19c).
Moreover, these tunneling layers may act as encapsulation
layers to protect perovskite lms from decomposition caused by
moisture. For example, trichloro(3,3,3-triuoropropyl)silane 4.7. Surface passivation by oxygen and silica
appears to be an efficient agent to act as a tunneling layer to
Tian et al. observed a synergistic passivation effect of a perov-
fabricate water-resistant devices. A very small amount of H2O
skite crystal surface by oxygen using super-resolution optical
can trigger the hydroxylation of silanes to form silanols; these
imaging and PL microscopy.189 The PL intensities of both the
subsequently undergo cross-linking reactions, forming Si–O–Si
small (<100 nm) and large crystals (several micrometers)
(siloxane) bonds (Fig. 19a). This layer protects the perovskite
increase with increasing irradiation time in air, while the PL
lm underneath it, and the resulting devices show much better
intensities of the samples in an argon environment are almost
resistance to water damage. In other work, Zuo et al. used
constant (Fig. 20a and b). In argon atmosphere, the PL lifetime
polymer functionalized with a Lewis base pyridine group,
of the small crystals is much longer than that of the large
poly(4-vinylpyridine) (PVP), as an agent to passivate the under-
crystals (Fig. 20c). This evidence reveals that in air, oxygen acts
coordinated Pb2+ ions and improve both the device efficiency
as a reactant to passivate the traps of small crystals rapidly and
and the stability of PSC cells.187
efficiently. The enhancement of the PL intensity over time was
In addition to organic polymers, the use of hydrophobic
found to vary greatly depending on the measurement position
amine functional molecules to passivate perovskite lms can be
within one crystal when the PL signals of isolated micrometer-
regarded as efficient method for enhancing the stability against
sized crystals were investigated at high spatial resolution.
moisture and improving the electronic properties of PSCs.188
Light-induced curing in the presence of oxygen causes
Wang et al. tested aniline (A), phenethylamine (PA) and ben-
enhancement of the perovskite photoluminescence. In other
zylamine (BA) for passivation of FAPbI3 perovskite lms. The
work, the same authors hypothetically proposed that the trap
selected molecules contain benzene rings, whose p-conjugation
sites are responsible for non-radiative charge recombination,
structures favor charge transport, while amino groups may be
which can be deactivated by photochemical reactions with
anchored to the Pb–I framework through coordination with the
oxygen, and that the reaction zone is spatially limited by the
Pb ions or hydrogen bonding with the iodide ions. The authors
diffusion length and penetration depth of the charge carriers.190

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Fig. 22 (a) Schematic of the fabrication procedures of perovskite solar cells with MAPbBr3xIx QDs. (b) Energy diagram of each material in the
MAPbBr3xIx QDs-modified devices. Reproduced with permission from ref. 211. Copyright 2016, American Chemical Society. (c) Energy diagram
of each material in the CsPbBr1.85I1.15 QDs-modified device. (d) J–V curves for the optimal CsPbBr1.85I1.15 QDs-modified device. Reprinted with
permission from ref. 212. Copyright 2019 Elsevier. (e) Schematic of the procedure for preparing MAPbI3 films using CsPbBrCl2QDs. Reprinted
with permission from ref. 208. Copyright 2019 Elsevier.

Oxygen can decrease the deep defect states in perovskite (f-SiO2) to the perovskite precursor solution on the photovoltaic
materials, not only under illumination but also by thermal performance of the resulting PSCs. Modication with f-SiO2
treatment in air.191,192 Oxygen acts as a p-type dopant in MAPbl3 enhanced the performance of MAPbI3xClx PSCs due to
in order to produce oxygen passivation.193 Oxygen diffusion can decreases in the number and size of pinholes in the perovskite
also induce fast degradation of perovskite thin lms, similar to lm during processing.196
the “double-edged sword” effect of Pbl2 passivation at the
perovskite grain boundaries.194 By the formation of superoxide 4.8. Passivation of perovskite lms using 2D perovskite
(O2) species, which accelerate the decomposition of perovskite
Recently, two-dimensional (2D) perovskites have been proposed
materials, the speed of diffusion of oxygen into the MAPbl3 lm
as passivation layers between the 3D perovskite and HTL
increases. The photo-induced formation of superoxide species
interface due to their better stability than 3D perovskite and
from O2 can be mitigated by thin-lm passivation with iodide
great potential in grain boundary passivation, bulk passivation
salts, which results in higher stability.195 Consequently, this
and surface defect passivation of 3D perovskites.197–202 The
approach has been successfully applied to fabricate highly
deposition of a bulky organic cation on a pre-formed 3D
efficient and stable PSCs (PCE of 22.1%).5
perovskite surface induces in situ growth of a 2D perovskite
Carnie et al. investigated the effects of addition of 3-amino-
layer through a reaction with excess PbI2. This approach
propyl (3-oxobutanoic acid)-functionalized silica nanoparticles
improves the stability and photovoltaic performance due to the

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decreased number of surface trap states and suppressed inter- between the MAPbI3 perovskite lm and the HTM layer
facial charge recombination by the favorable band alignment of (Fig. 22a).211 By adjustment of the Br : I ratio, the MAPbBr3xIx
the 3D/2D mixed-layered structure. QDs showed tunable uorescence and band energy levels, as
Cho et al. developed a procedure for the direct growth of a low- shown in Fig. 22b. The interfacial modication with the
dimensional perovskite layer of (PEA)2PbI4 (PEA ¼ phenyl- MAPbBr0.9I2.1 QDs provided appropriate band energy align-
ethylammonium) on top of the 3D perovskite surface, which ment; this facilitates the hole extraction, which enhances the
leads to improved thermal stability of the devices and increases charge carrier lifetime and, hence, the photovoltaic perfor-
the PCE to 20.75%.200 Top view scanning electron microscopy mance. However, the poor chemical stability of MAPbBr3xIx
(SEM) analysis showed that the perovskite lm with a 2D perov- QDs is regarded as the main obstacle that limits their applica-
skite layer has a smoother and more homogeneous morphology tion in PSCs. Thus, all-inorganic cesium-based perovskite QDs
and decreased grain boundaries compared to the pristine were used as effective additives to modify the perovskite/HTM
perovskite lm. In other related work, the treatment of a carbon interface. For example, Akin et al. implemented an interfacial
electrode with PEAI resulted in the formation of a 2D perovskite layer of CsPbBr1.85I1.15 QDs between triple-cation based perov-
at the interface between the perovskite and carbon layers skite and spiro-OMeTAD layers in PSCs.212 This modication
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(Fig. 21a and b).203 The interfacial growth of the ultrathin PEA2- shields the perovskite layer from moisture and ion migration as
PbI4 layer provided better band energy alignment with favorable well as light exposure and thus improves the stability of the
hole transport and higher conduction levels to block electron cells. Moreover, CsPbBr1.85I1.15 QDs increased the ability of hole
ow, which greatly suppressed the interfacial charge recombi- transport by pulling out holes from the inner perovskite layer
nation (Fig. 21c). The PEA-modied devices showed greatly and decreased the charge recombination by preventing back
improved stability over 1000 h of exposure to ambient conditions. ow of electrons (Fig. 22c). A maximum PCE as high as 21.14%
In a similar manner, a uorinated aromatic ammonium cation, was achieved, along with long term stability (Fig. 22d). In
2-(4-uorophenyl)ethyl ammonium iodide (FPEAI), was intro- a similar manner, CsPbBr3 QDs were introduced between the
duced to in situ grow a 2D perovskite layer on top of a Cs/FA/MA perovskite/HTL interface to improve the morphology and crys-
triple-cation 3D perovskite lm in a reaction with excess PbI2.204 tallinity of MAPbI3 lms.213 The introduction of a proper
The resulting FPEA2PbI4 perovskite layer acts as an efficient amount of CsPbBr3 QDs led to the crystallization of a passiv-
capping layer to protect the 3D perovskite from moisture; it also ation layer of Cs1yMAyPbI3xBrx on top of the perovskite layer
simultaneously decreases the charge recombination and with fewer grain boundaries and lower defect density; this
promotes hole transportation at the perovskite/HTL interface. facilitates the charge extraction and transport at the interfaces.
Luo et al. demonstrated a solution-processed secondary Recently, CsPbBrCl2 QDs were applied as surface modiers for
growth strategy (SSG) to produce a wider bandgap layer on top of improving both the PCE and stability of MAPbI3 solar cells.208
n-type 3D perovskite lms with the assistance of guanidinium The long hydrophobic alkane tails from the perovskite QD
bromide. This procedure improved the perovskite lm quality ligands were self-assembled on the MAPbI3 surface and
and decreased the nonradiative recombination in the inverted retarded the moisture permeation by blocking the escape of MA
PSCs, leading to a stabilized power output approaching 21% and cations (Fig. 22e). In turn, the QD elemental dopants were
long-term stability.205 Recently, n-hexyl trimethyl ammonium uniformly distributed across the MAPbI3 lm and passivated
bromide was used for the formation of a thin layer of wide- the defect trap states. As a result, a CsPbBrCl2 QDs-based device
bandgap halide (WBH) perovskite on top of a narrow-bandgap yielded PCEs up to 21.5% and maintained 80% of the initial
light-absorbing layer.206 The WBH layer effectively decreased PCE aer 500 h of continuous illumination.
recombination at the perovskite/P3HT interface through favour- In addition to lead halide perovskite QDs, carbon quantum
able van der Waals interactions. Based on this approach, the dots (CQDs) have emerged as efficient additives for perovskite
modied device showed a certied PCE of 22.7% and high absorbers to improve the PCE and the stability of PSC devices.207
stability at 85% relative humidity without encapsulation. The authors demonstrated that the hydroxyl and carbonyl func-
tional groups present on CDQs passivated the uncoordinated
Pb2+ ions in the GBs and decreased the nonradiative recombi-
4.9. Passivation of perovskite lms using quantum dots nation in the perovskite layer, leading to the formation of
The main issue that hinders the commercialization of PSCs is perovskite lms with higher photoluminescence intensities and
the instability of their performance under humidity, light longer carrier lifetimes. The best CDQs-modied device achieved
exposure and high temperature. It was found that the stability a PCE of 18.24% and retained 73.4% of this value aer being aged
and performance of PSCs can be enhanced using lead halide for 48 h under 80% humidity in the dark at room temperature.
perovskite quantum dots (QDs), which passivate the GBs and
enhance the crystallinity of the perovskite absorber layer.207–210
Moreover, lead halide perovskite QDs appear to be promising 5. Passivation at the HTL and top
additives for interface engineering to control the perovskite electrode interface
band structure due to their high photoluminescence quantum
yields and tunable energy bands. The conventionally used Ag and Au electrodes may cause
Cha et al. developed a method to tune the photovoltaic degradation of PSCs by diffusing through the HTM layer and
performance of PSCs by incorporating MAPbBr3xIx QDs perovskite layer.214 The use of different electrodes based on

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carbon or other metals and deposition of an interfacial layer to materials, and organic and inorganic self-assembled mono-
block metal migration can enable the fabrication of stable layers results in better carrier transport and low charge
PSCs.215 Sanehira et al. studied different electrodes (Au, Ag, recombination at the ETL/perovskite interface. Among these
MoOx/Au, MoOx/Ag, and MoOx/Al) in PSCs and found that the materials, the molecular design of C60 SAM derivatives with low
most stable device was composed of MoOx/Al due to its spon- solubility in polar solvents is a promising method to modify the
taneous formation of an ultra-thin aluminum oxide layer, which optoelectronic properties of ETL and subsequently improve the
inhibits decomposition of the perovskite lms under illumi- efficiency of PSCs as well as decrease their I–V hysteresis.
nation.216 Other work demonstrated that by adding a thin layer Further progress in the interfacial modication of the ETL
of Ni to the Au electrode in CH3NH3PbI3-based PSCs, better surface should pave the way to design highly efficient charge
photocurrent stability and water stability can be obtained transporting layers for the development of highly efficient PSCs.
because the Ni layer functions as a hole-transfer catalyst and The density of the GBs and the morphology of perovskite
a physical passivation barrier.217,218 Improvement of the quality lms have critical impacts on the photovoltaic performance
of the HTL was also achieved by modication of its surface with and stability of PSCs; these can be controlled by passivation
a thin layer of rubrene.219 This interfacial modication with additives such as thiocyanate, Cl/Br halide, PbI2, MAI,
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enhanced the carrier extraction and charge transfer, leading to quantum dots and other organic molecules. The use of excess
a device with a high PCE of 19.87% and negligible hysteresis. PbI2 or MAI and chloride additives (MACl, FACl) was demon-
Moreover, the introduction of rubrene improved the stability of strated to be an effective method to passivate the grain
the devices in a humid environment due to its lower water boundaries of perovskite lms and form large grains, respec-
wettability. tively. Control of the hole injection from perovskite to HTL can
be drastically improved by applying a passivation layer of
6. Conclusion and outlook hydrophobic groups and low-dimensional 2D perovskites or
Lewis bases. The introduction of hydrophobic 2D perovskite
Among next-generation photovoltaic technologies, PSCs have on top of a 3D perovskite surface has emerged as a standard
drawn special attention from the research community due to route to optimize perovskite for long term stability while
their incredible power conversion efficiency, lower cost and ease maintaining high efficiency and will contribute to the reali-
of fabrication. According to a recent NREL PV chart, the best zation of commercial PSCs. Thus, searching for new 2D
PSC has already achieved a PCE of 25.2%. However, the most layered perovskite compositions is highly attractive for
efficient PSCs are based on lead (Pb) cation, which is toxic in offering better solutions to the current challenges in the
nature. Other issues, such as instability due to humidity, light perovskite research community. We also believe that Lewis
exposure, and high temperature, and the dependency of the J–V base passivation strategies deserve further investigation
hysteresis curves restricts the commercialization of PSCs. The because decreased defect densities as well as enhanced elec-
interfacial inhomogeneity of the heterostructure layers tronic properties are critical for improvement of PSC perfor-
produces various trap states and large numbers of grain mance. On the other hand, modication of the HTL/top
boundaries, which are the main cause of the instability of PSCs. electrode interface improves the alignment of the band energy
Developing reliable and reproducible methods to produce position and yields PSCs that are more stable against
highly efficient and stable devices that can compete with humidity. Further evolution of the HTL/metal electrode
conventional silicon cells for the enormous PV market remains interface may provide a key for understanding the long-term
a challenging task. stability of PSCs.
Our review summarizes the effects of additive engineering of In-depth understanding of the relationship between the
the interfaces in addition to different layers in terms of chem- physicochemical properties of used additives and the improved
ical passivation, including the opto-electronic role of additives, properties of perovskite lms is crucial for developing new
band alignment and interface engineering. Changes in the work additive systems. We expect that even greater performance
function can be induced by deposition of nonconjugated poly- enhancement can be achieved through further rational design
mers on the transparent conductive oxide, which increases the of processing additives for interface engineering.
charge collection and value of the Jsc. However, the inuence of
the TOC/ETL interface structures on the photovoltaic perfor- Conflicts of interest
mance has not been paid as much attention as that on other
device interfaces. The insertion of a monolayer with the ability We declare that there is no conict of interest.
of passivating surface defects on both the ETL and perovskite
layer is regarded as a promising approach to improve the device Acknowledgements
efficiency and stability and decrease their I–V hysteresis
phenomenon. The aim of introducing a thin buffer layer at the M. M. T. would like to acknowledge the research laboratory of
ETL/perovskite interface is to accelerate the electron injection electronics (RLE) at Massachusetts Institute of Technology. D.
and inhibit the interface recombination. Careful engineering of P. acknowledges the nancial support from the HOMING pro-
the interface is needed to minimize electron losses and to gramme of the Foundation for Polish Science co-nanced by the
provide a correctly matched energy band alignment. Modica- European Union under the European Regional Development
tion with metal/non-metal ions, fullerene and graphene-based Fund (POIR.04.04.00-00-5EE7/18-00).

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R. Heiderhoff, M. F. Oszajca, N. A. Luechinger, D. Rogalla,


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