Helwan University Sheet (3)

Analog Electronics 1st year

Dr. Eman Farouk Elec. & Comm. Eng. Dep.

Q1] Find the dc transmission, the corner frequency f0, and the transmission at f = 2 MHz
for the low pass STC circuit shown in Fig. 1.

Fig. 1.

Ans.: –6 dB; 318 kHz; –22 dB

Q2] Find the transfer function T(s) of the circuit in Fig. 2. What type of STC network is it?

Fig. 2.

Ans.:

Q3] For the situation discussed in Fig. 2, if R = 10 kΩ, find the capacitor values that result
in the circuit having a high-frequency transmission of 0.5 V/V and a corner frequency ω0 =
10 rad/s.

Ans. : C1 C2 5 µF

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Q4] In Fig.3, a common-emitter amplifier has CC1 CE CC2 1 µF, RB 100 kΩ, Rsig
5 kΩ, gm 40 mA/V, r = 2.5 kΩ, RC 8 kΩ, and RL 5 kΩ. Assuming that the three
capacitors do not interact, find fP1, fP2, and fP3, and hence estimate fL.

Fig.3

Ans. : 21.4 Hz, 2.21 KHz, 12.2 Hz

Q5] In Fig. 4, a CS amplifier has CC1 CS CC2 1 µF, RG 10 MΩ, Rsig 100 kΩ, gm 2
mA/V, RD RL 10 kΩFind AM, fP1, fP2, fP3, and fL.

Fig.4

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 Ans. : -9.9 V/V, 0.016 Hz, 318 Hz, 8 Hz, 318 Hz

Q6] Select appropriate values for the coupling capacitors CC1 and CC2 and the bypass
capacitor CS for a CS amplifier for which RG = 4.7 MΩ, RD = RL = 15 kΩ, Rsig = 100 kΩ,
and gm = 1 mA/V. It is required to have fL at 100 Hz and that the nearest break frequency
be at least a decade lower.

Ans. : 3.3nF, 0.53μF, 1.6μF

Q7] For the common-emitter amplifier of Fig. 5, neglect ro, and assume the current source
to be ideal.
(a) Derive an expression for the midband gain.
(b) Derive expressions for the break frequencies caused by CE and CC.
(c) Give an expression for the amplifier voltage gain A(s).
(d) For Rsig RC RL 10 kΩ, 100, and I 1 mA, find the value of the midband gain.
(e) Select values for CE and CC to place the two break frequencies a decade apart and to
obtain a lower 3-dB frequency of 100 Hz while minimizing the total capacitance.
(f) Sketch a Bode plot for the gain magnitude.
(g) Find the phase shift at 100 Hz.

Fig. 5.

Ans. : -40 V/V, 12.7μF, 0.8μF, -129.3°

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Q8] The NMOS transistor in the discrete CS amplifier circuit of Fig. 6 is biased to have gm
= 1 mA/V. Find AM, fP1, fP2, fP3, and fL.

Fig. 6.

Ans. : -3.16 V/V, 1.9 Hz, 23.9 Hz, 108.3 Hz, 108.3 Hz

Q9] A discrete MOSFET common-source amplifier has Rin 2 MΩ, gm 4 mA/V, ro 100
kΩ, RD 10 kΩ, Cgs 2 pF, andCgd 0.5 pF. The amplifier is fed from a voltage source
with aninternal resistance of 500 kΩand is connected to a 10-kΩload. Find:
(a) the overall midband gain AM
(b) the upper 3-dB frequency fH
Ans. : -15.2 V/V, 33.1 KHz

Q10] The NMOS transistor in the discrete CS amplifier circuit of Fig. 6 is biased to have
gm 1 mA/V and ro 100 kΩ. Find AM. If Cgs 1 pF and Cgd 0.2 pF, find fH.

Ans. : -3.06 V/V, 874.99 KHz

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Q11] The analysis of the high-frequency response of the common-source amplifier,
presented in the text, is based on the assumption that the resistance of the signal source, Rsig,
is large and, thus, that its interaction with the input capacitance Cin produces the “dominant
pole” that determines the upper 3-dB frequency fH. In some situations, however, the CS
amplifier is fed with a very low Rsig. To investigate the high-frequency response of the
amplifier in such a case, Fig. 7 shows the equivalent circuit when the CS amplifier is fed
with an ideal voltage source Vsig having Rsig 0. Note that CL denotes the total capacitance
at the output node. By writing a node equation at the output, show that the transfer function
Vo/Vsig is given by

𝑉𝑜 1 − 𝑠(𝐶𝑔𝑑 /𝑔𝑚 )
= −𝑔𝑚 𝑅𝐿 ′
𝑉sig 1 + 𝑠(𝐶𝐿 + 𝐶𝑔𝑑 )𝑅𝐿 ′

At frequencies (gm/cgd), the s term in the numerator can be neglected. In such case, what
is the upper 3-dB frequency resulting? Compute the values of AM and fH for the case: Cgd 
0.5 pF, CL 2 pF, gm 4 mA/V, and RL′5 kΩ.

RL′

Fig. 7.
Ans. : -20 V/V, 12.7 MHz

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Q12] Consider the common-emitter amplifier of Fig. 8 under the following conditions: Rsig
5 kΩ, R1 33 kΩ, R2 22 kΩ, RE 3.9 kΩ, RC 4.7 kΩ, RL 5.6 kΩ, VCC 5 V. The dc
emitter current can be shown to be IE ≈ 0.3 mA, at which 120, ro = 300 kΩ, and rx = 50
Ω. Find the input resistance Rin and the midband gain AM. If the transistor is specified to
have fT = 700 MHz and Cµ = 1 pF, find the upper 3-dB frequency fH. (VT= 25mV)

Fig.8

Ans. : 5.7 KΩ, -16.11 V/V, 1.79 MHz

Q13] For a version of the CE amplifier circuit in Fig. 8, Rsig 10 kΩ, R1 68 kΩ, R2 27
kΩ, RE 2.2 kΩ, RC 4.7 kΩ, and RL 10 kΩ. The collector current is 0.8 mA, 200, fT
1 GHz, and Cµ0.8 pF. Neglecting the effect of rx and ro, find the midband voltage gain
and the upper 3-dB frequency fH.

Ans. : -32.8 V/V, 572 KHz

Q14] (A) Draw the low frequency and mid-band equivalent circuits for the Common-
Collector amplifier in Fig.9, if RS  2K, R1 100K , R2  300K , R3 13K, R4 
100K, C1  4.7F ,C2 10F ,C  20pF, C  2pF  100 and IC  0.25mA.
(B) What are the lower-cut off frequency and the mid-band gain of the amplifier?
(C) Draw the high frequency model and write expression for the voltage gain at the high-
frequency.
(D) What is the higher cut-off frequency?

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 Fig.9
Q15] (A) Draw the low frequency and mid-band equivalent circuits for the Common-Drain
amplifier in Fig.10, if RS  2K, R1  1.5M, R2  2.2M , R3 12K R4  100K,C1 
4.7F ,C2  0.1F ,Cgs 1pF ,Cgd  5pF and ID  0.1mA (at VGS VT  0.75 V ).
(B) What are the lower-cut off frequency and the mid-band gain of the amplifier?
(C) Draw the high frequency model and write expression for the voltage gain at the high-
frequency.
(D) What is the higher cut-off frequency?

Fig.10

Best Wishes Dr. Eman F. Sawires

…………………….End …………………….

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