Transistor

2SC4410
Silicon NPN epitaxial planer type

For UHF amplification

Unit: mm

(0.425)
+0.1 +0.10
0.3Ð0.0 0.15Ð0.05

■ Features 3

● Allowing the small current and low voltage operation.

1.25±0.10

2.1±0.1
● High transition frequency fT.

5û
● S-Mini type package, allowing downsizing of the equipment and 1 2

automatic insertion through the tape packing and the magazine

0.2±0.1
(0.65) (0.65)

packing. 1.3±0.1

2.0±0.2

10û

■ Absolute Maximum Ratings (Ta=25˚C)

+0.2
0.9Ð0.1
0.9±0.1
Parameter Symbol Ratings Unit

0 to 0.1
Collector to base voltage VCBO 10 V
Collector to emitter voltage VCEO 7 V
Emitter to base voltage VEBO 2 V 1:Base
Collector current IC 10 mA 2:Emitter EIAJ:SC–70
3:Collector SMini3-G1 Package
Collector power dissipation PC 50 mW
Junction temperature Tj 150 ˚C Marking symbol : 2X
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA
Emitter cutoff current IEBO VEB = 1.5V, IC = 0 1 µA
Forward current transfer ratio hFE VCE = 1V, IC = 1mA 50 200
Transition frequency fT VCE = 1V, IC = 1mA, f = 800MHz 4 GHz
Collector output capacitance Cob VCB = 1V, IE = 0, f = 1MHz 0.4 pF
Foward transfer gain | S21e |2 VCE = 1V, IC = 1mA, f = 800MHz 6.0 dB
Maximum unilateral power gain GUM VCE = 1V, IC = 1mA, f = 800MHz 15 dB
Noise figure NF VCE = 1V, IC = 1mA, f = 800MHz 3.5 dB
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.

459
Transistor 2SC4410

PC — Ta IC — VCE IC — VBE
80 6 60
Ta=25˚C VCE=1V
Collector power dissipation PC (mW)

70 IB=50µA
5 45µA 50

Collector current IC (mA)

Collector current IC (mA)

40µA
60
35µA
4 40
50 30µA 25˚C
25µA Ta=75˚C –25˚C
40 3 30
20µA
30 15µA
2 20

20 10µA

1 5µA 10
10

0 0 0
0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
100 240 12
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=1V VCE=1V

f=800MHz
Forward current transfer ratio hFE

30 Ta=25˚C

Transition frequency fT (GHz)

200 10

10

160 8
3
Ta=75˚C
1 120 6
Ta=75˚C
0.3 25˚C 25˚C
80 4
–25˚C –25˚C
0.1

40 2
0.03

0.01 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Collector current IC (mA) Collector current IC (mA) Collector current IC (mA)

Cob — VCB GUM — IC NF — IC

1.2 24 6
Maximum unilateral power gain GUM (dB)

IE=0 VCE=1V VCE=1V

Collector output capacitance Cob (pF)

f=1MHz f=800MHz (Rg=50Ω)

Ta=25˚C Ta=25˚C f=800MHz
1.0 20 5
Ta=25˚C
Noise figure NF (dB)

0.8 16 4

0.6 12 3

0.4 8 2

0.2 4 1

0 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V) Collector current IC (mA) Emitter current IE (mA)

460
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2001 MAR