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ECE Questions

This document contains practice questions for an Introduction to Electronics Engineering course. It includes 18 questions in the first module on topics like energy bands, PN junction diodes, and rectifier circuits. The second module contains 12 questions on bipolar junction transistors, MOSFETs, and transistor biasing configurations.

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bhaskarraj1714
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28 views

ECE Questions

This document contains practice questions for an Introduction to Electronics Engineering course. It includes 18 questions in the first module on topics like energy bands, PN junction diodes, and rectifier circuits. The second module contains 12 questions on bipolar junction transistors, MOSFETs, and transistor biasing configurations.

Uploaded by

bhaskarraj1714
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Dayananda Sagar University

School of Engineering

Practice Questions-1

Course Title: Introduction to Electronics Engineering


Faculty: Prof. Divyashree H B Course Code:23EN1111

Module-1
1. With neat energy band diagram explain energy levels of insulators, conductors and
semiconductors.
2. Define N type material, P type material, majority charge carriers, and minority charge
carriers.
3. Define acceptor doping and donor doping. Explain the doping process in brief.

4. Explain the operation of PN junction diode under forward and reverse bias conditions
with the help of V-I characteristics curve.

5. Define following diode parameters: (i) Peak inverse voltage (ii) Reverse leakage current
(iii) Maximum forward current

6. Compare Ideal diode and Practical diode characteristics.

7. A germanium diode is used in a rectifier circuit and is operating at a temperature of 25°C


with a reverse saturation current of 1000μA. Calculate the value of forward current if it is
forward biased by 0.22V. Assume the value of η=1 for Ge.

8. At a temperature of 23°C (common temperature for components in an enclosed operating


system), determine the thermal voltage V T.

9. With a neat circuit diagram, explain the working of a half-wave rectifier along with
relevant waveforms.

10. Explain the working of a Full wave Bridge rectifier with the help of circuit diagram and
waveforms.

11. Briefly explain positive logic AND gate circuit using diode.
12. With a neat diagram, explain how Zener diode can be used for voltage regulation.

13. Determine the thermal voltage for a diode at a temperature of 100°C. (Boiling point of
water). For the same diode of part (a), find the diode current using Equation if I s =40 nA, n
=2 (low value of V D), and the applied bias voltage is 0.5 V.

14. Determine the temperature coefficient of a 5-V Zener diode (rated 25°C value) if the
nominal voltage drops to 4.8 V at a temperature of 100°C.

15. Sketch the output v o


a. Determine the dc level of the output for the network given below.
b. Repeat part (a) if the ideal diode is replaced by a silicon diode.
c. Repeat parts (a) and (b) if V m is increased to 200 V and compare solutions using
Equations.

16. Determine V o for the negative logic OR gate of given circuit.

17. Assuming an ideal diode, sketch v i , v d , and i d for the half-wave rectifier circuit . The
input is a sinusoidal waveform with a frequency of 60 Hz. Determine the profit value of v i
from the given dc level.
18. Determine v o and the required PIV rating of each diode for the configuration given
below. In addition, determine the maximum current through each diode.
Module-2
1. Explain the construction and operation of NPN BJT.

2. Draw and explain the input and output characteristics of a transistor in common emitter
(CE) configuration.

3. What are the biasing rules for a transistor so that it can be used as an amplifier?

4. Explain fixed bias and emitter bias condition of BJT.

5. For the voltage-divider bias configuration given in below circuit, determine:


a. IBQ.
b. ICQ.
c. VCEQ.
d. V C.
e. V E.
f. V B.

6. In a common base connection, current amplification factor is 0.7. If the emitter current is
1.2 mA, determine the value of base current.

7. Determine the saturation current for the network.


8. Given the information provided in emitter bias circuit, determine:
a. R C .
b. R E .
c. R B .
d. V CE .
e. V B .

9. Given the information appearing in fixed bias circuit, determine:


a. I C.
b. V CC.
c. b.
d. R B
10. Explain how transistor acts as a switch.
11. Explain the input and output characteristics of a transistor in common base
configuration.
12. Explain construction of n-channel depletion MOSFET with characteristics.

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