GD50PIX120C5SN IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD50PIX120C5SN
1200V/50A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

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GD50PIX120C5SN IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 84
IC A
@ TC=100oC 50
ICM Pulsed Collector Current tp=1ms 100 A
PD Maximum Power Dissipation @ Tj=175oC 288 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 50 A
IFM Diode Maximum Forward Current tp=1ms 100 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 50 A
Surge Forward Current tp=10ms @ Tj=25oC 450
IFSM A
@ Tj=150oC 370
I2t-value,tp=10ms @ Tj=25oC 1000
I2t A2s
@ Tj=150oC 685

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 50
IC A
@ TC=100oC 25
ICM Pulsed Collector Current tp=1ms 70 A
PD Maximum Power Dissipation @ Tj=175oC 202 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 15 A
IFM Diode Maximum Forward Current tp=1ms 30 A

Module
Symbol Description Value Unit
Maximum Junction Temperature(inverter,brake) 175 o
Tjmax C
Maximum Junction Temperature (rectifier) 150
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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GD50PIX120C5SN IGBT Module

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=50A,VGE=15V,
1.75 2.20
Tj=25oC
Collector to Emitter IC=50A,VGE=15V,
VCE(sat) 2.00 V
Saturation Voltage Tj=125oC
IC=50A,VGE=15V,
2.05
Tj=150oC
Gate-Emitter Threshold IC=1.80mA,VCE=VGE,
VGE(th) 5.6 6.2 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 5.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 4.66 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.13 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.35 μC
td(on) Turn-On Delay Time 137 ns
tr Rise Time 26 ns
td(off) Turn-Off Delay Time 323 ns
VCC=600V,IC=50A,
tf Fall Time 78 ns
RG=15Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 4.88 mJ
Loss
Turn-Off Switching
Eoff 2.74 mJ
Loss
td(on) Turn-On Delay Time 146 ns
tr Rise Time 34 ns
td(off) Turn-Off Delay Time 421 ns
VCC=600V,IC=50A,
tf Fall Time 147 ns
RG=15Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 6.59 mJ
Loss
Turn-Off Switching
Eoff 4.21 mJ
Loss
td(on) Turn-On Delay Time 146 ns
tr Rise Time 34 ns
td(off) Turn-Off Delay Time 441 ns
VCC=600V,IC=50A,
tf Fall Time 166 ns
RG=15Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 7.19 mJ
Loss
Turn-Off Switching
Eoff 4.69 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 200 A
VCEM≤1200V

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GD50PIX120C5SN IGBT Module

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=50A,VGE=0V,Tj=25oC 1.85 2.30
Diode Forward
VF IF=50A,VGE=0V,Tj=125oC 1.90 V
Voltage
IF=50A,VGE=0V,Tj=150oC 1.95
Qr Recovered Charge 6.3 μC
Peak Reverse VR=600V,IF=50A,
IRM 62 A
Recovery Current -di/dt=1400A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 1.67 mJ
Energy
Qr Recovered Charge 10.1 μC
Peak Reverse VR=600V,IF=50A,
IRM 69 A
Recovery Current -di/dt=1400A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 2.94 mJ
Energy
Qr Recovered Charge 11.5 μC
Peak Reverse VR=600V,IF=50A,
IRM 72 A
Recovery Current -di/dt=1400A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 3.63 mJ
Energy

Diode-rectifier Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=50A,VGE=0V,Tj=150oC 1.00 V
Voltage
IR Reverse Current Tj=150oC,VR=1600V 2.0 mA

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GD50PIX120C5SN IGBT Module

IGBT-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=25A,VGE=15V,
1.75 2.10
Tj=25oC
Collector to Emitter IC=25A,VGE=15V,
VCE(sat) 2.00 V
Saturation Voltage Tj=125oC
IC=25A,VGE=15V,
2.05
Tj=150oC
Gate-Emitter Threshold IC=1.00mA,VCE=VGE,
VGE(th) 5.6 6.2 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 5.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 2.59 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.07 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.19 μC
td(on) Turn-On Delay Time 22 ns
tr Rise Time 14 ns
td(off) Turn-Off Delay Time 186 ns
VCC=600V,IC=25A,
tf Fall Time 176 ns
RG=20Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 1.37 mJ
Loss
Turn-Off Switching
Eoff 1.42 mJ
Loss
td(on) Turn-On Delay Time 22 ns
tr Rise Time 17 ns
td(off) Turn-Off Delay Time 274 ns
VCC=600V,IC=25A,
tf Fall Time 205 ns
RG=20Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 2.06 mJ
Loss
Turn-Off Switching
Eoff 2.10 mJ
Loss
td(on) Turn-On Delay Time 22 ns
tr Rise Time 18 ns
td(off) Turn-Off Delay Time 294 ns
VCC=600V,IC=25A,
tf Fall Time 216 ns
RG=20Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 2.22 mJ
Loss
Turn-Off Switching
Eoff 2.30 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 100 A
VCEM≤1200V

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GD50PIX120C5SN IGBT Module

Diode-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=15A,VGE=0V,Tj=25oC 1.85 2.30
Diode Forward
VF IF=15A,VGE=0V,Tj=125oC 1.90 V
Voltage
IF=15A,VGE=0V,Tj=150oC 1.95
Qr Recovered Charge 1.4 μC
Peak Reverse VR=600V,IF=15A,
IRM 15 A
Recovery Current -di/dt=540A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.36 mJ
Energy
Qr Recovered Charge 2.4 μC
Peak Reverse VR=600V,IF=15A,
IRM 14 A
Recovery Current -di/dt=540A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 0.67 mJ
Energy
Qr Recovered Charge 2.8 μC
Peak Reverse VR=600V,IF=15A,
IRM 14 A
Recovery Current -di/dt=540A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 0.78 mJ
Energy

NTC Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 %
Power
P25 20.0 mW
Dissipation
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]
R2=R25exp[B25/80(1/T2-
B25/80 B-value 3411 K
1/(298.15K))]
R2=R25exp[B25/100(1/T2-
B25/100 B-value 3433 K
1/(298.15K))]

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GD50PIX120C5SN IGBT Module

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 35 nH
RCC’+EE’ 4.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 3.00
Junction-to-Case (per IGBT-inverter) 0.520
Junction-to-Case (per Diode-inverter) 0.793
RthJC Junction-to-Case (per Diode-rectifier) 0.808 K/W
Junction-to-Case (per IGBT-brake) 0.742
Junction-to-Case (per Diode-brake) 1.760
Case-to-Sink (per IGBT-inverter) 0.296
Case-to-Sink (per Diode-inverter) 0.451
Case-to-Sink (per Diode-rectifier) 0.460
RthCH K/W
Case-to-Sink (per IGBT-brake) 0.422
Case-to-Sink (per Diode-brake) 1.001
Case-to-Sink (per per Module) 0.020
M Mounting Torque, Screw:M5 3.0 6.0 N.m
G Weight of Module 200 g

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 GD50PIX120C5SN IGBT Module

100 100

90 VGE=15V 90
VCE=20V
80 80

70 70

60 60
IC [A]

IC [A]
50 50

40 40

30 30

20 Tj=25℃
20
Tj=25℃
Tj=125℃ Tj=125℃
10 10
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

30 28
Eon,Tj=125℃ Eon,Tj=125℃
Eoff,Tj=125℃ Eoff,Tj=125℃
24 Eon,Tj=150℃
25 Eon,Tj=150℃
Eoff,Tj=150℃ Eoff,Tj=150℃
20 VCC=600V
20 VCC=600V IC=50A
RG=15Ω VGE=±15V
16
E [mJ]

E [mJ]

VGE=±15V
15
12
10
8

5 4

0 0
0 20 40 60 80 100 0 30 60 90 120 150
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

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 GD50PIX120C5SN IGBT Module

110 1
100 IGBT
Module
90
80
70

ZthJC [K/W]
60
IC [A]

0.1
50
40
30
RG=15Ω
20 i: 1 2 3 4
VGE=±15V ri[K/W]: 0.0311 0.1715 0.1666 0.1508
τi[s]: 0.01 0.02 0.05 0.1

10 Tj=150oC

0 0.01
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

100 5
Tj=25℃
Tj=125℃ Erec Tj=125℃
Tj=150℃ Erec Tj=150℃
80 4

60 3
E [mJ]
IF [A]

40 2

VCC=600V
20 1 RG=15Ω
VGE=-15V

0 0
0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 100
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

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 GD50PIX120C5SN IGBT Module

4 1
Erec Tj=125℃ Diode
3.5 Erec Tj=150℃

ZthJC [K/W]
E [mJ]

2.5 0.1

VCC=600V i: 1 2 3 4
1.5 ri[K/W]: 0.0476 0.2616 0.2539 0.2299
IF=50A τi[s]: 0.01 0.02 0.05 0.1

VGE=-15V
1 0.01
0 30 60 90 120 150 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

100 50

90 Tj=25℃
VGE=15V
Tj=150℃
80 40

70

60 30
IC [A]
IF [A]

50

40 20

30

20 10
Tj=25℃
10 Tj=125℃
Tj=150℃
0 0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

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 GD50PIX120C5SN IGBT Module

30 100
Tj=25℃
Tj=125℃
25 Tj=150℃

20 10

R [kΩ]
IF [A]

15

10 1

0 0.1
0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150
VF [V] TC [oC]

Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic

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GD50PIX120C5SN IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

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GD50PIX120C5SN IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
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application.

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or which concerns the specific application of our product, please contact the sales office,
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interested we may provide application notes.

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information on the types in question please contact the sales office, which is responsible for
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©2020 STARPOWER Semiconductor Ltd. 2/18/2020 13/13 Preliminary