New L J Institute of Engineering & Technology Semester: I (2020/21)

Subject Name: PHYSICS (Group-II)

Subject Code: 3110018
Faculties: Ms. Aditi Kinkhabwala, Ms. Akruti Dave
Sr. No CHAPTER 1:- ELECTRONIC MATERIALS Marks
TOPIC 1:- FREE ELECTRON THEORY
DESCRIPTIVE
1 List the types of electron theory of metals. 03
2 Give important postulates / assumptions of classical free electron theory. (Jan’19 Old, Jan’19 03-07
New3, Jan’20 New3)[NLJIET]
3 Give success and drawback of classical free electron theory. (Jan’19 New3)[NLJIET] 03
4 Derive an expression for electrical conductivity. Also express electrical conductivity in terms of 05-07
kBT.[NLJIET]
5 Deduce expression for electrical conductivity of conducting material and hence obtain 07
Wiedemann-Franz law. (Jun’19 Old)[NLJIET]
NUMERICALS
1 A conductor has an electron concentration of 5.9x1028/m3. What current density in the conductor 03
corresponds to the drift velocity of 0.625m/sec. Calculate the mobility of charge carriers. Given that
conductivity is 6.22x107 Ω-1m-1. [NLJIET]
2 Find the drift velocity of free electrons in a copper wire whose cross sectional area is A=1.05mm2 when 03
the wire carries a current of 1A. Assume that each copper atom contributes one electron to the electron
gas. Density of free electrons is given as 8.5x1028/m3. [NLJIET]
3 Calculate the drift velocity of free electrons with a mobility of 3.5x10-3 m2V-1S-1 in copper for an 03
electric field of strength 0.5V/m.[NLJIET]
4 For a metal having 6.5x1028/m3 conduction electrons per m3, find the relaxation time of conduction 03
electrons if the metal resistivity is 1.435x10-8 Ωm. [NLJIET]
5 Calculate the mean free path between collisions of free electrons in copper at 20 oC. The resistivity of 03
copper is 1.72x10-8 Ωm at 20oC and density of free electrons is 8.48x1028/m3. [NLJIET]
6 Calculate the drift velocity of electrons in a metal of thickness 1mm across which a potential difference 03
of 1V is applied. Compare this value with the thermal velocity at temperature 300K. Given that mobility
is 0.04 m2V-1S-1.[NLJIET]
7 Calculate the drift velocity of electrons in copper and current density in a wire of 0.16x10-2m which carries 03
a current of 10A. Given that density is 8.48x1028/m3. [NLJIET]
8 A uniform silver wire has a resistivity of 1.54x10-8 Ωm at room temperature, for an electric field along 03
the wire of 1V/cm. Find the drift velocity of electron assuming that there are 5.8x1028 conduction electrons
/m3. Also calculate its mobility. [NLJIET]
9 Find the thermal conductivity of copper at 20oC with free electron density of 8.48 x 1028/m3. The 03
thermal velocity of copper at 20oC is 1.1536 x 105m/s, with a mean free path of 2.8138 nm.
(Jan’19 Old) [NLJIET]
10 Find the relaxation time of conduction electrons in a metal having resistivity 1.54 x 10-8 m and 03
electron density 6.8x 1028 per m3. (Jun’19 Old) [NLJIET]
11 The thermal and electrical conductivity of Cu at 20˚C are 390W m-1K-1 and 5.87x107 (Ωm)-1 04
respectively. Calculate the Lorentz number. (Jan’20 New3)[NLJIET]
12 Consider two-dimensional square lattice of side 3.0 Å. At what electron momentum values do 04
the sides of first Brillouin zone appear? What is the energy of free electron with this momentum?
(Jan’20 New3)[NLJIET]

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TOPIC 2:- DENSITY OF STATES, ENERGY BAND DIAGRAMS,

TYPES OF ELECTRONIC MATERIALS: INSULATORS, CONDUCTORS
& SEMICONDUCTORS
DESCRIPTIVE
1 Write a note on energy band diagram and formation of energy bands. (Jun’19 New3) [NLJIET] 07
2 Classify solid on the basis of energy band diagram. (Jun’19 Old) [NLJIET] 03
3 Define: a) Valence band b) Conduction band c) Forbidden energy gap. [NLJIET] 03
4 Define density of states. Also obtain an expression for the density of states. [NLJIET] 04-07
5 Obtain an expression for density of states. Also give an expression to calculate carrier 04-07
concentration. [NLJIET]
6 Explain classification of materials as conductors, insulators and semiconductors. (Jan’19 New3) 07
[NLJIET]
TOPIC 3: - KRONIG-PENNEY MODEL
DESCRIPTIVE
1 Explain Kronig-Penney model in detail. (Jan’19New3) [NLJIET] 07
2 Discuss Kronig-Penney model for motion of electron in a periodic potential. [NLJIET] 04-07
3 Explain the findings of Kronig-Penney model. [NLJIET] 03-04
TOPIC 4: - E-k DIAGRAM, DIRECT & INDIRECT BANDGAPS
1 Briefly discuss E-k diagram? [NLJIET] 03
2 What are direct and indirect band gap semiconductors? (Jun’19 New3) [NLJIET] OR Give 03
difference between direct and indirect bandgap (Jan’20 New3) [NLJIET]
3 Explain direct and indirect band gap with E-k diagrams. (Jan’19New3)[NLJIET] 07
TOPIC 5: - OCCUPATION PROBABILITY FERMI LEVEL,
EFFECTIVE MASS, PHONONS
DESCRIPTIVE
1 Explain Fermi levels. (Jan’19 New3)[NLJIET] 04
2 What is Fermi function? What are fermions? Give examples. [NLJIET] 03
3 Give expression for Fermi energy at 0 K and at any temperature. [NLJIET] 03
4 Define Fermi function and Fermi energy. Explain with graph, variation of Fermi function with 05-07
temperature and energy. [NLJIET]
5 Obtain an expression for Fermi energy at 0 K. Also give an expression for Fermi energy at non 05
zero temperature. [NLJIET]
6 Derive expression for effective mass of an electron. [NLJIET] 05-07
7 Write a short note on phonons. [NLJIET] 03
NUMERICALS
1 Evaluate Fermi function for an energy kBT above Fermi energy. [NLJIET] 03
2 Use the Fermi function to obtain the value of f (E) for E-EF = 0.01eV at 200K. [NLJIET] 03
3 Calculate Fermi energy and Fermi temperature in a metal. The Fermi velocity of electrons in the 03
metal is 0.86 x 106 m/sec. [NLJIET]

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4 Calculate Fermi temperature and Fermi velocity for sodium whose Fermi level is 3.2 eV. 03
[NLJIET]
5 In a solid, consider an energy level lying 0.1 eV above Fermi level. What is the probability of 03
this level not being occupied by an electron at room temperature?[NLJIET]
6 Calculate the Fermi velocity and free path for conduction electrons, given that its Fermi energy 03
is 11.63 eV and relaxation time is 7.3 x 10-15 sec. [NLJIET]
7 The Fermi level in potassium is 2.1 eV. What are the energies for which the probabilities of 03-04
occupancy at 300K are 0.99, 0.01, and 0.5? [NLJIET]
8 Using Fermi function, evaluate the temperature at which there is 1% probability that an electron 03
in a solid will have an energy 0.5eV above EF of 5eV. [NLJIET]
9 Find the probability with which an energy level of 0.02eV above Fermi level will be occupied 03
at room temperature of 300 K and 1000K? [NLJIET]

CHAPTER 2:- SEMICONDUCTORS

TOPIC 1:- INTRINSIC & EXTRINSIC SEMICONDUCTORS
DESCRIPTIVE
1 Why does a pure semiconductor behave like an insulator at room temperature? [NLJIET] 03
2 Differentiate between intrinsic and extrinsic semiconductors. (Jan’19 New3) [NLJIET] 03
3 What are donor and acceptor impurities? Give examples [NLJIET] 03
4 Differentiate between p-type and n-type semiconductors (Jan’19 New3)[NLJIET] 03
5 Write properties of semiconductors. [NLJIET] 03
6 Classify semiconductors on the basis of characteristics. [NLJIET] 07
7 Explain intrinsic and extrinsic semiconductors with necessary diagrams.(Jun’19 New3) 04
[NLJIET]
TOPIC 2:- DEPENDENCE OF FERMI LEVEL ON CARRIER
CONCENTRATION AND TEMPERATURE
DESCRIPTIVE
1 Derive an expression for density of holes in valence band of an Intrinsic semiconductor. 04
[NLJIET]
2 Derive an expression for density of electrons in conduction band of an Intrinsic semiconductor. 04
(Jan’19 New3)[NLJIET]
3 Explain the variation of Fermi level with temperature for an intrinsic semiconductor. 03-04
[NLJIET]
4 Obtain expression for majority carriers in n-type semiconductor. [NLJIET] 05-07
5 Obtain expression for majority carriers in p-type semiconductor. [NLJIET] 05-07
6 Explain the variation of Fermi level with temperature and concentration for n-type 03-04
semiconductor. [NLJIET]
7 Explain the variation of Fermi level with temperature and concentration for p-type 03-04
semiconductor. [NLJIET]
8 Derive equations for n-type semiconductor to determine dependence of fermi level on 07
temperature and doping concentration. (Jun’19 New3) [NLJIET]
NUMERICALS
1 For intrinsic silicon the room temperature electrical conductivity is 4x10-4 Ω-1m-1 .The electron 03
and hole mobilities are 0.14 and 0.040 m-2V-1S-1respecively Compute electron and hole
concentrations at room temperature. [NLJIET]
2 For intrinsic carrier density at room temperature in Ge is 2.37x1019, electrons and hole mobilities 03
are 0.38 and 0.18 m2V-1S-1respecively calculate its resistivity. [NLJIET]

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3 The electron and hole mobilities in In-Sb semiconductor are band 6 and 0.2 m2V-1S-1. At room 03
temperature the resistivity of In-Sb is 2x10-4Ωm. Assuming material is intrinsic determine carrier
density at room temperature. [NLJIET]
4 For a semiconductor Si, Eg is 1.12 eV. Determine the position of Fermi level at 300K if 03
me*=0.12 mo*and mh*=0.28mo (mo is the rest mass of electron). [NLJIET]
5 Suppose that effective mass of holes in a material is 4 times the mass of electrons. At what 03-04
temperature would Fermi level be shifted by 10% from the middle of forbidden energy gap.
Given Eg= 1eV. [NLJIET]
6 Find the resistance of an intrinsic Ge rod 1 cm long. 1 mm wide and 1 mm thick at 300 K. For 03
Ge, ni = 2.5 *1019/m3, µh = 0.39 m2 V-1 s-1 and µh = 0.19 m2 V-1 S-1. [NLJIET]
7 In an intrinsic semiconductor, energy gap is 1.2 eV. What is the ratio between its conductivity at 03
600K and 300K?[NLJIET]
8 At 20oC, conductivity of Ge is 2 Ω-1 m-1. Find the conductivity of Ge at 40oC. Band gap is given 03
as 0.72eV. [NLJIET]
9 The energy gap of two intrinsic semiconductors is 0.36 eV and 0.72eV respectively. Compare 03
carrier densities of the 2 at 300 K. [NLJIET]
10 The conductivity of a semiconductor at 20oC is 250Ω-1 m- 1 and at 100oC is 1100Ω-1 m-1. Find the 03
band gap energy. [NLJIET]
11 The electron mobility in a pure semiconductor is 50 m2 V-1 s-1at 4.2K. What is the mobility at 300K? 03
Given that µ1 is 50 m2 V-1 s-1. [NLJIET]
12 The electrical conductivity of an intrinsic semiconductor increases from 19.96Ω-1 m-1 to 79.44Ω-1 m-1, 03
when temperature increases from 60oC to 100oC. Find the bandgap energy. [NLJIET]
13 In a p-type Ge, ni=2.1x1019/m3, density of boron is 4.5x1023 atoms/m3. The electron and hole 03-04
mobilities are 0.4 and 0.2 m2 V-1s-1 respectively. Find the conductivity before and after addition
of boron atoms. [NLJIET]
14 Find the concentration of holes and electrons in n-type silicon at 300K, if the conductivity is 3x104 Ω-1 03-04
m- 1. Find these values for p-type also. Additional data given is ni is 1.5x1016/m3, µe is 1300x10-4
m2 V-1s-1 and µh is 500x10-4 m2 V-1s-1. [NLJIET]
15 Find the density of impurity atoms that must be added to an intrinsic crystal in order to convert it 03-04
into 10 Ω cm p-type silicon and 10 Ω cm n-type silicon. Also find the concentration of minority
charge carriers in each case. For Si, ni is 1.5x1010/cm3, µe is 1350 cm2 V-1s-1 and µh is
480cm2 V-1s-1. [NLJIET]
16 Calculate the energy gap of Si, given that radiation of wavelength 11,000 Å is incident on it. 04
Also find allowed wavelength for Ge with energy gap 0.90 eV. (Jun’19 New3) [NLJIET]
17 Consider n-type silicon semiconductor with a length of 100 μm, cross sectional area 10-7 cm2, 04
minority charge carrier life time 10-6 s, μe is 0.13 m2 / Vs and μh is 0.05 m2 / Vs. Find (a)
Electron transit time (b) Photo conductor gain when voltage applied to the photoconductor is 12
V. [NLJIET]
TOPIC 3:- CARRIER GENERATION & RECOMBINATION, CARRIER
TRANSPORT: DIFFUSION-DRIFT
DESCRIPTIVE
1 Explain and diffusion current.(Jan’19 New3)[NLJIET] 04
2 Differentiate between drift and diffusion currents in semiconductors. Which is more present in 05
semiconductors? [NLJIET]
3 Explain diffusion mechanism in detail. (Jan’19 New3) [NLJIET] 07
4 Write a short note on Drift current.
5 Define carrier generation and recombination. [NLJIET]
[L.J.I.E.T] 03
6 Write a short note on direct recombination. Why is called band-to-band transition? [NLJIET] 04
7 Write a short note on indirect recombination.[NLJIET] 04
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8 Define radiative and non-radiative transitions. (Jan’19 New3) [NLJIET] 03

9 What is radiative and non-radiative transitions? Explain in brief the optical joint density of 07
states. (Jun’19 New3) [NLJIET]
TOPIC 4:- P-N JUNCTION
DESCRIPTIVE
1 What is meant by potential barrier across a p-n junction? [NLJIET] 03
2 What is zero bias of a pn junction diode? Explain. [NLJIET] 04
3 What is a PN Junction diode? What is external bias? Describe its forward and reverse bias 07
conditions with appropriate diagrams. (Jun’19 New3) [NLJIET]

4 Explain the working of pn junction. Discuss forward and reverse biasing of p-n junction diode. 05-07
(Jan’20 New3) [NLJIET]
5 Explain with diagrams of forward and reverse biasing of a p-n junction. Also plot the V-I curve 05-07
for both cases [NLJIET]
6 Define: a) Depletion layer b) Threshold voltage c) Leakage current. [NLJIET] 03
7 What is Zener diode? Explain with circuit diagram how a Zener diode operates in reverse bias 04
condition. (Jun’19 Old) [NLJIET]
TOPIC 5:- METAL SEMICONDUCTOR JUNCTION (OHMIC AND
SCHOTTKY)
DESCRIPTIVE
1 Write a short note on Ohmic contact. [NLJIET] 04-07
2 What is the difference between Ohmic and Schottky contacts? [NLJIET] 04
3 Explain Schottky contact. (Jan’20 New3) [NLJIET] 04-07
4 Define: a) Work function b) Electron affinity. [NLJIET] 03
5 Write a note on metal semiconductor junctions. (Jun’19 New3)[NLJIET] 07
TOPIC 6:-SEMICONDUCTOR MATERIALS OF INTEREST FOR
OPTOELECTRONIC DEVICES
DESCRIPTIVE
1 Define: a) Photoluminescence b) Cathodoluminescence c) Electroluminescence. [NLJIET] 03
2 Write a short note on LED. Also explain its characteristics[NLJIET] 07
3 Write a short note on Photodiode. [NLJIET] 07
4 Explain the basic principle, construction and working with figure and advantages of Light 03-04
Emitting diode(LED) (Jan’19 Old)[NLJIET]
5 What is photoconductivity , photoluminescence and phototransistor? (Jun’19 New3)[NLJIET] 03

CHAPTER 3:- LIGHT SEMICONDUCTOR INTERACTIONS

TOPIC 1:- OPTICAL TRANSITIONS IN BULK SEMICONDUCTORS:
ABSORPTION, SPONTANEOUS & STIMULATED EMISSION
DESCRIPTIVE
1 Discuss absorption of light by semiconductors. [NLJIET] 03
2 Explain the terms spontaneous emission and stimulated emissions.[NLJIET] 03
3 Write a short note on Stimulated Emission. [NLJIET] 03
4 Write a short note on Spontaneous Emission. [NLJIET] 03
5 Describe stimulated and spontaneous emission of radiation. [NLJIET] 03-04
6 Write the difference between stimulated and spontaneous emission of radiation. [NLJIET] 03-04
7 Explain emission and absorption. (Jan’19 New3)[NLJIET] 04

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 New L J Institute of Engineering & Technology Semester: I (2020/21)

8 State principle and discuss working of semiconductor laser.(Jun’19 New3)[NLJIET] 04

TOPIC 2: JOINT DENSITY OF STATES, DENSITY OF STATES FOR
PHOTONS
DESCRIPTIVE
1 What is Joint density of states? What is the need of defining Joint density of states? (Jan’20 03-07
New3)[NLJIET]
2 Derive an expression for joint density of states or density of states for photons.
04
(Jan’19New3)[NLJIET]
TOPIC 3:- TRANSITION RATES (FERMI’S GOLDEN RULE)
DESCRIPTIVE
1 Write a short note on Fermi’s golden rule. (Jan’19 New3) [NLJIET] 04
TOPIC 4:- OPTICAL LOSS, GAIN, PHOTOVOLTAIC EFFECT
DESCRIPTIVE
1 Write a short note on photovoltaic effect. [NLJIET] 03-04
2 What is photovoltaic effect? Explain construction and working of a solar cell with suitable
07
diagram. (Jun’19 New3)[NLJIET]
3 What is the cause and remedy for optical loss in photovoltaic cell? (Jun’19 New3)[NLJIET] 03
4 Briefly discuss parameters of solar cell. [NLJIET] 03-04
5 Explain the basic principle, construction and working with figure and advantages of
03-04
Photovoltaic cell. (Jan’19 Old)[NLJIET]
6 What is photovoltaic effect? Explain construction and working of solar cell. (Jan’19
07
New3)[NLJIET]
7 Give details of applications of solar cell (at least 4). (Jun’19 New3)[NLJIET] 04
TOPIC 5:- EXCITON, DRUDE MODEL
DESCRIPTIVE
1 Write a note on exciton. (Jun’19 New3)[NLJIET] 03
2 Explain Drude model.(Jan’19 New3)[NLJIET] 04
3 Briefly explain assumptions of Drude model. [NLJIET] 04
4 Describe applications of Drude model. [NLJIET] 04

CHAPTER 4 : MEASUREMENTS
TOPIC 1 :- FOUR POINT PROBE & VANDER PAUW
MEASUREMENTS FOR CARRIER DENSITY, RESISTIVITY & HALL
MOBILITY
DESCRIPTIVE
1 Discuss about four point probe method for different cases. (Jan’20 New3)[ [NLJIET] 07
2 Discuss about four point probe method for thin sheet. [NLJIET] 03-04
3 Discuss about four point probe method for bulk sample. [NLJIET] 03-04
4 Discuss Vander Pauw measurements for carrier density. [NLJIET] 05-07
5 Discuss Vander Pauw measurements for mobility and doping type. [NLJIET] 05-07
6 Define resistivity of a material. What is its unit? [NLJIET] 03
7 Find resistivity using Vander Pauw method.[NLJIET] 05-07
8 Define Hall effect and Hall coefficient. Derive equation to find Hall voltage. What does it
07
signify? (Jun’19 New3) (Jan’20 New3) [NLJIET]
9 Why two probe method for resistivity measurement failed and hence explain four probe
07
method.(Jan’19 New3)[NLJIET]
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 New L J Institute of Engineering & Technology Semester: I (2020/21)

10 Discuss Van Der Pauw method. (Jun’19 New3)[NLJIET] 07

11 Explain the Hall effect. (Jun’19 Old) (Jan’20 New3) [NLJIET] 04
NUMERICALS
1 A semiconductor crystal 12mm long, 1mm wide and 1mm thick has a magnetic flux density of
0.5 Wb /m2, applied from to back, and is perpendicular to largest faces. When a current of 20 mA
flows lengthwise through the specimen, the voltage measured across its width is found to be 04
37µV. What is the Hall coefficient of semiconductor and the density of charge carrier?
(Jan’19 Old) [NLJIET]
2 2.0 Cm wide and 1.0 mm thick copper strip is placed in a magnetic field 1.5Wb/m2
perpendicular to the strip. Suppose a current of 200A is set up in the strip what will be the Hall 04
potential appeared across the strip? (n=8.4x1028 electrons /m3). (Jan’20 New) [NLJIET]
TOPIC 2 :- HOT POINT PROBE & CAPACITANCE VOLTAGE
MEASUREMENTS
DESCRIPTIVE
1 What is hot point probe method? (Jan’19 New3)[NLJIET] 03-04
2 What are capacitance voltage measurements? (Jun’19 New3)[L.J.I.E.T] 03
3 What is Junction capacitance? Briefly explain. [NLJIET] 03
TOPIC 3: PARAMETER EXTRACTION FROM DIODE I-V, DLTS &
UV-Vis SPECTROSCOPY
DESCRIPTIVE
1 Describe extraction from diode I-V characteristics [NLJIET] 05-07
2 What is DLTS? Explain experimental procedure for DLTS.(Jan’19 New3, Jun’19
04-07
New3)[NLJIET]
3 Discuss UV–Vis method for band gap measurement of semiconductors. (Jan’19 Jun’19 New3)
07
(Jan’20 New3) [NLJIET]

CHAPTER 5:- SUPERCONDUCTIVITY

TOPIC:1 –INTRODUCTION OF SUPERCONDUCTIVITY
DESCRIPTIVE
1 Compare Type-I and Type-II superconductor. (Dec’08 Old, Mar’09 Old, Jun’09 Old, 04
Sep’09 Old, Jan’10 Old, Jun’10 Old, Nov’10 Old, Jan’11 Old, Jun’12 Old, Dec’13 Old,
Jun’15New, Jun’15Old, Dec’15 New, Dec’15Old, May’16Old, Jan’17Old, Jan’20
New)[NLJIET]
OR
Write any four points of comparison/ distinguish between Type–I and Type-II superconductors.
(May’18New, Jun’19New)[NLJIET]
2 What are superconductors? Discuss Type-I and Type-II superconductors.
07
(May’16New)[NLJIET]
3 What is superconductivity? Compare Type-1 and Type-2 superconductors. Which of these two
04
has wider application? Why?(May’17 New)[NLJIET]
4 Define superconductivity. What are different types of superconductors? Explain them in detail.
07
(Jan’18New) [NLJIET]
5 Compare /Differentiate between Hard and Soft superconductors. (Jul’11Old, Jun’19
03-04
New3)[NLJIET]
6 Based on what factor superconductors are classified? Explain the types, which one has more
04
applications? Give the reason for your answer. (Jan’19New) [NLJIET]

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TOPIC 2:- PROPERTIES OF SUPERCONDUCTORS

DESCRIPTIVE
1 Explain isotopic effect, critical magnetic field and Meissner effect for superconductors.
04-05
(Jun’13Old, Jun’14New) [NLJIET]
2 Define superconductivity. Write definitions of the three important factors to define a 04
superconducting state? Also, discuss few important properties of
superconductor.(Dec’13New) [NLJIET]
3 Write any three properties of superconductors. (May’18New) [NLJIET] 03
4 Write definitions of the three important factors to define a superconducting state?
03
(Jan’13Old)[NLJIET]
5 Explain the types of superconductor on the bases of its behavior with applied magnetic
05
field.(Jan’13Old)[NLJIET]
6 Define: Low-Temperature Superconductor, High-Temperature Superconductor, Maglev 07
(Jun’14 New)[NLJIET]
7 Show that Superconducting material is diamagnetic nature and obtain χm = -1. (Jun’12
07
Old)[NLJIET]
8 Discuss magnetic field effect and diamagnetic property of superconductor. Prove that χm = -1
03
for superconductor. (Dec’11Old)[NLJIET]
9 Show that the superconductors are perfectly diamagnetic in nature. (Mar’10Old, Jan’15
04-07
New)[NLJIET]
10 Explain: Meissner effect. Prove that a superconductor exhibits perfect diamagnetism. (Jan’17
04-07
New, May’17Old)[NLJIET]
11 Discuss the properties of superconductors. (Dec’08 Old, Jan’11Old, Jun’14Old, Jun’15New,
07
Dec’15 New, Jan’ 19 New3) [NLJIET]
12 What are superconductors? Explain few important properties of Superconductors. (Jun’09 04
May’16 Ol [NLJIET] OR
What is superconducting material? List the properties of superconducting materials and explain
in detail. (May’18Old, Jun’19Old)[NLJIET]
13 List any four properties of superconducting materials and explain in detail. (Jan’15New) 03-07
[NLJIET]
14 What is superconductivity? List the properties of superconducting materials and explain each in
07
detail. (Jan’18 Old)[NLJIET]
15 Explain the following terms for superconducting material and prove that below Tc, a
superconductor is a perfectly diamagnetic substance. (Jan’ 19 Old)[NLJIET] (i) Magnetic 03
field effect (ii) Meissner effect (iii) Persistent current
16 Explain / Discuss Meissner effect in superconductors. (Jan’ 19 New, Jun’ 19 03
New)[NLJIET]
NUMERICALS
1 The critical magnetic field at 5 K is 2x103 A/m in a superconducting ring of radius of 0.02 m.
03
Find out the value of critical current. (June’12Old)[NLJIET]
2 The critical temperature of Nb is 9.15 K. At zero Kelvin the critical field is 0.196 Tesla.
Calculate the critical field at 6K. (Nov’10Old, Dec’13Old, May’16 Old, Jan’19 03
New3)[NLJIET]
3 The critical temperature of a superconductor is 78 K and critical field is 0.518 T at 0 K. Find
03
the value of critical field at temperatures 25 K and 58 K. (Jan’13Old)[NLJIET]
4 Determine the critical current for a superconducting ring of diameter 10-3m (1mm) at
03
temperature 4.2K. Given the critical temperature (Tc) for sample is 7.18K and critical magnetic
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 New L J Institute of Engineering & Technology Semester: I (2020/21)

field at 0K (Hc(0)) is 6.5x 104 A/m. (Dec’13Old , Jun’14Old , June’14New, Jun’15Old,

May’16New)[NLJIET]
5 The critical temperature Tc for Hg with isotopic mass 199.5 is 4.185 K. Calculate the critical
03
temperature for its isotopic mass 204.5. (Jan’15New)[NLJIET]
6 The critical temperature of mercury with isotopic mass 202 is 4.2K. Calculate its critical
03
temperature when its isotopic mass is 200. (Jan’15New, Dec’15New, Jan’17Old)[NLJIET]
7 What is isotopic effect for superconducting material? The critical temperature for a metal with
isotopic mass of 199.5 is 4.185 K. Calculate the isotopic mass if the critical temperature falls to 03
4.133 K.(May’17New, Jan’19Old)[NLJIET]
8 Calculate the critical current through a long thin superconducting wire of radius 0.5 mm. The
03
critical magnetic field is 7.2 kA / m. (May’17Old)[NLJIET]
9 Calculate the critical current for a wire of lead having a diameter of 1mm at 4.2K. Critical
03
temperature for leads is 7.18K and Hc(0) = 6.5x104A/m. (Jan’18New)[NLJIET]
10 The transmitted intensity is 0.4 times intensity of incident light. If this
light is incident on a semiconductor having a thickness of 0.5cm then 03
find absorption coefficient.
11 The critical current density equal to 1.71 x 108 A/m2 is required to change a superconducting
wire of radius 0.5 mm at 4.2 K. If the critical temperature of the material is 7.18 K, calculate 03
the maximum value of the critical magnetic field. (Jun’19 New3)[NLJIET]
12 A Josephson junction has a voltage of 9 μV across its terminals. Calculate the frequency of
03
radiation generated by it. Given h = 6.626x10-34J. (Jun’19 New)[NLJIET]
13 Calculate the critical current for a superconducting wire of lead having a diameter of 2 mm at 2
03
K. Critical temperature for lead is 4 K and Hc (0) = 6.5 X 104 A/m. (Jan’20 New)[NLJIET]
TOPIC 3:- MECHANISM OF SUPERCONDUCTIVITY-BCS THEORY,
PENETRATION DEPTH
1 How are cooper pairs formed in a superconductor? [NLJIET] 03
2 Explain BCS theory for superconductivity. (Jun’19New3) [NLJIET] 04
3 Briefly outline BCS theory of superconductivity and describe one experimental evidence for the
04-07
existence of energy gap. [NLJIET]
4 Define: 1) Coherence length 2) Penetration depth 3) Cooper pair 4) Energy gap 04
5 Explain mechanism of superconductivity. (Jan’19New3) [NLJIET] 04
6 What is London penetration depth? Derive its equations. (Jun’19New3) [NLJIET] OR Explain 04
London’s penetration depth.(Jan’20 New3) [NLJIET]
TOPIC 4: APPLICATIONS OF SUPERCONDUCTOR
1 What is SQUID? Explain with diagram? OR Give formation and application of SQUID. 04
(Jun’19New3, Jan’20 New3) [NLJIET]
2 Explain Josephson Effect and its application. (Sep’09 Old, Jun’10, Dec’13 Old, Dec’15 Old, 05-07
Jan’17New)[ NLJIET]
3 Describe and give important applications of superconductors in Maglev..
07
[NLJIET]
4 List out the difference between A.C. Josephson effect and D.C Josephson effect. (Mar’09 Old)
[NLJIET] 03
5 Give few important applications of superconductors. (Jun’09 Old, Sep’09 Old, Jan’10 Old,
Jun’19Old) [NLJIET] 04
6 Explain Josephson Junction and its application. Also explain application of superconductor in
04
Cryotron.(May’17New, Jan’20 New3) [NLJIET]

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