UNISONIC TECHNOLOGIES CO.

, LTD
6N65 Power MOSFET

6.2A, 650V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 6N65 is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
 FEATURES
* RDS(ON) < 1.7Ω @VGS = 10V
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
6N65L-TA3-T 6N65G-TA3-T TO-220 G D S Tube
6N65L-TF3-T 6N65G-TF3-T TO-220F G D S Tube
6N65L-TF1-T 6N65G-TF1-T TO-220F1 G D S Tube
6N65L-TF2-T 6N65G-TF2-T TO-220F2 G D S Tube
6N65L-TF3T-T 6N65G-TF3T-T TO-220F3 G D S Tube
6N65L-TM3-T 6N65G-TM3-T TO-251 G D S Tube
6N65L-TMS-T 6N65G-TMS-T TO-251S G D S Tube
6N65L-TN3-T 6N65G-TN3-T TO-252 G D S Tube
6N65L-TN3-R 6N65G-TN3-R TO-252 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

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6N65 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 6.2 A
Continuous Drain Current ID 6.2 A
Pulsed Drain Current (Note 2) IDM 24.8 A
Avalanche Energy Single Pulsed (Note 3) EAS 440 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns
TO-220 125 W
TO-220F/TO-220F1
40 W
TO-220F3
Power Dissipation PD
TO-220F2 42 W
TO-251/TO-251S
55 W
TO-252
Junction Temperature TJ +150 °C
Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220/TO-220F
TO-220F1/TO-220F2 62.5
Junction to Ambient TO-220F3 θJA °C/W
TO-251/TO-251S
110
TO-252
TO-220 1.0
TO-220F/TO-220F1
3.2
TO-220F3
Junction to Case θJC °C/W
TO-220F2 2.97
TO-251/TO-251S
2.27
TO-252

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6N65 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V
Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 μA
Forward VGS = 30V, VDS = 0V 100 nA
Gate- Source Leakage Current IGSS
Reverse VGS = -30V, VDS = 0V -100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.1 1.7 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 950 1200 pF
VDS=25V, VGS=0V,
Output Capacitance COSS 95 120 pF
f=1.0 MHz
Reverse Transfer Capacitance CRSS 18 25 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 45 60 ns
Turn-On Rise Time tR VDD=325V, ID =6.2A, 100 130 ns
Turn-Off Delay Time tD(OFF) RG =25Ω (Note 1, 2) 300 400 ns
Turn-Off Fall Time tF 220 270 ns
Total Gate Charge QG 180 200 nC
VDS=520V, ID=6.2A,
Gate-Source Charge QGS 8 nC
VGS=10V (Note 1, 2)
Gate-Drain Charge QGD 20 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V
Maximum Continuous Drain-Source Diode
IS 6.2 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 24.8 A
Forward Current
Reverse Recovery Time tRR VGS = 0 V, IS = 6.2 A, 290 ns
Reverse Recovery Charge QRR dIF/dt = 100 A/μs (Note 1) 2.35 μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature

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6N65 Power MOSFET

 TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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6N65 Power MOSFET

 TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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6N65 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain Current, ID (A)

Drain Current,ID (A)

Drain Current,ID (µA)

Drain Current,ID (µA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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