SFF80N20 Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET 80 AMP , 200 Volts, 25 mΩ
Part Number / Ordering Information 1/ Avalanche Rated N-channel
SFF80N20 ___ ___ ___ MOSFET
│ │ └ Screening 2/
│ │ __ = Not Screened
│ │ TX = TX Level
TXV = TXV Level Features:
│ │
S = S Level  Rugged poly-Si gate
│ │
Lead Option 3/  Lowest ON-resistance in the industry
│ └  Avalanche rated
│ __ = Straight Leads
DB = Down Bend  Hermetically Sealed, Isolated Package
│  Low Total Gate Charge
UB = Up Bend
└  Fast Switching
Package 3/ 4/
M = TO-254 N = TO-258  TX, TXV, S-Level screening available
Z = TO-254Z P = TO-259  Improved (RDS(ON) QG) figure of merit

Maximum Ratings5/ Symbol Value Units

Drain - Source Voltage VDSS 200 V
continuous ±20
Gate – Source Voltage transient
VGS V
±30
Max. Continuous Drain Current (package
@ TC = 25ºC ID1 55 A
limited)
@ TC = 25ºC ID2 80
Max. Instantaneous Drain Current (Tj limited) A
@ TC = 175ºC ID3 48
Max. Avalanche current @ L= 0.1 mH IAR 60 A
EAS 1500
Single and Repetitive Avalanche Energy @ L= 0.1 mH mJ
EAR 50
Total Power Dissipation @ TC = 25ºC PD 150 W
Operating & Storage Temperature TOP & TSTG -55 to +175 ºC
Maximum Thermal Resistance 1.0
RθJC ºC/W
(Junction to Case) (typ.0.75)

TO-254 (M) TO-254Z (Z) TO-258 (N) TO-259 (P)

NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For lead bending options / pinout configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
SFF80N20 Series
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics5/ Symbol Min Typ Max Units
Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 200 220 –– V
o
Drain to Source On State VGS = 10V, ID = 48A, Tj= 25 C –– 25 30
Resistance VGS = 10V, ID = 48A, Tj=125oC RDS(on) –– 50 65 mΩ
VGS = 10V, ID = 48A, Tj= 175oC –– 65 ––
VDS = VGS, ID = 4.0mA, Tj= 25oC 2.5 4.5 5.0
Gate Threshold Voltage
VDS = VGS, ID = 4.0mA, Tj= 125oC VGS(th) 1.5 3.6 –– V
VDS = VGS, ID = 4.0mA, Tj= -55oC –– 5 6
VGS = ±20V, Tj= 25oC –– 10 ±100
Gate to Source Leakage IGSS nA
VGS = ±20V, Tj= 125oC –– 30 ––
VDS = 200V, VGS = 0V, Tj = 25oC –– 0.01 25 μA
Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V, Tj = 125oC IDSS –– 2.5 150 μA
VDS = 200V, VGS = 0V, Tj = 150oC –– 25 –– μA
Forward Transconductance VDS = 10V, ID = 48A, Tj = 25oC gfs 25 50 –– Mho
Total Gate Charge VGS = 10V Qg –– 150 250
Gate to Source Charge VDS = 100V Qgs –– 45 65 nC
Gate to Drain Charge ID = 48A Qgd –– 75 120
Turn on Delay Time VGS = 10V td(on) –– 50 75
Rise Time VDS = 100V tr –– 50 75
nsec
Turn off Delay Time ID = 48A td(off) –– 110 135
Fall Time RG = 4.0Ω, pw= 3us tf –– 50 75
Diode Forward Voltage IF = 48A, VGS = 0V VSD –– 0.90 1.5 V
IF = 10A, di/dt = 100A/usec trr1 –– 190 250 nsec
IF = 10A, di/dt = 100A/usec Irm1 –– 11 –– A
Diode Reverse Recovery Time IF = 10A, di/dt = 100A/usec Qrr1 –– 1 –– μC
Reverse Recovery Charge IF = 25A, di/dt = 100A/usec trr2 –– 310 –– nsec
IF = 25A, di/dt = 100A/usec Irm2 –– 17 –– A
IF = 25A, di/dt = 100A/usec Qrr2 –– 2.5 –– μC
Input Capacitance VGS = 0V Ciss –– 5300 ––
Output Capacitance VDS = 25V Coss –– 1050 –– pF
Reverse Transfer Capacitance f = 1 MHz Crss –– 175 ––

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC
Solid State Devices, Inc. SFF80N20 Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
TO-254 (M) TO-254Z (Z)

TO-258 (N) TO-259 (P)

PIN ASSIGNMENT (Standard)

Package Drain Source Gate
TO-254 (M) Pin 1 Pin 2 Pin 3
TO-254Z (Z) Pin 1 Pin 2 Pin 3
TO-258 (N) Pin 1 Pin 2 Pin 3
TO-259 (P) Pin 1 Pin 2 Pin 3

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC