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2021 Assignment9 Solution

2021_Assignment9_solution for VLSI Design

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13 views

2021 Assignment9 Solution

2021_Assignment9_solution for VLSI Design

Uploaded by

ecemidqp.cmrit
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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Assignment 9 solutions

1. InAlN and AlGaN. In the given list, only In,Al and Ga belong to group III.
2. Tensile. Since the lattice parameter of AlGaN will be smaller than that of
GaN, the film will grow tensile.
3. Ga0.75In0.25P. Given, EGa ❑ x (1 − x ) P − E InP =0.73 eV . From this, EGa ❑
x (1 − x ) P =2 eV . Using
Vegard’s law, x E GaP+ (1 − x ) E InP=2 eV . Solve for x.
4. Bowing factor b can be determined by using E G(Al0.25Ga0.75N) =
0.25*EG(AlN) + 0.75*EG(GaN) + b*0.25*(1-0.25)
5. p-Si/n-Si form a homojunction. Linearly and exponentially graded AlGaAs-
GaAs do form heterojunction but not abrupt.
6. Displacement field on AlGaAs and GaAs side should be the same. Hence,
Φnεn = Φpεp => Φn((x*εεAlAs) + ((1-x)*εεGaAs)) = Φp εGaAs . Ratio of Φn/Φp = 10:9.
After putting all values, x= 0.45

7. You are provided with an AlGaAs layer that is compositionally graded from Al Ga As to GaAs
0.25 0.75

over a length of 100nm in a linear fashion. Take the layer to be ideally intrinsic. In which direction will
be the electrons and holes be accelerated. Take the conduction and valence band offsets to be
identical over the entire range of composition

a. Electrons accelerated from AlGaAs to GaAs and holes to the other


direction
b. Electrons accelerated from GaAs to AlGaAs and holes to the other
direction
c. Electrons and holes in the same direction from AlGaAs to GaAs
d. Electrons and holes in the same direction from GaAs to AlGaAs

Any composition of AlGaAs has a higher bandgap than GaAs by Vegard’s law.
Therefore, if the layer is compositionally graded from 25%-AlGaAs to GaAs, then
the slope of both conduction and valence band will be opposite to each other.
Therefore, both the electrons and holes will be attracted to the same side, from
AlGaAs towards GaAs.

8. For efficient light extraction from the Quantum well of an LED stack, the bandgap of the surrounding
material forming the p- and n-regions must be ______ in comparison to the bandgap of the material where
electron-hole recombination occurs.

a. Larger
b. Smaller
c. Equal
d. Does not depend on bandgap

For efficient light extraction, the light emitted from the quantum well of a LED
must not be absorbed by the material surrounding it. Therefore, it must be of a
higher bandgap than the energy of the emitted radiation, which in this case
would be roughly equal to the bandgap of material where the recombination
takes place.

9. You are tasked with having to make a quantum well for a LED emitting light of energy 2.9 eV using GaN
and some composition of InGaN. Which of the following compositions of InGaN would be most suitable for
the purpose.
Take bandgap of GaN as 3.4eV and InN as 0.7eV.
Use Vegard's law to calculate the corresponding bandgap of InGaN.
Hint: the energy corresponding to the light emitted should be roughly equal to the bandgap of the InGaN
composition.

a. In0.17Ga0.34N
b. In0.05Ga0.95N
c. In0.3Ga0.7N
d. In0.7Ga0.3N

Using Vegard’s law, we can express the composition of Indium for which the
bandgap of InGaN would roughly equal 2.9 eV

0.7 × x + ( 1 − x ) × 3.4=2.9

⇒ x ≈ 0.18

Therfore, 17%-InGaN would be the most appropriate.

Note that energy of the light emitted from the quantum well would be slightly
higher than the bandgap of the well material due to quantum confinement
effects.

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