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ROHM Semiconductor AEC

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Sanchez Hernandez Angel Antonio
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15 views4 pages

ROHM Semiconductor AEC

Uploaded by

Sanchez Hernandez Angel Antonio
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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ROHM Semiconductor AEC-Q101 Qualified Transistors

ROHM Semiconductor AEC-Q101 Qualified Transistors feature NPN, PNP, and dual transistors
with or without built-in resistors. These transistors include middle power transistors, low-frequency
amplifiers, general-purpose digital (bias resistor built-in) transistors, dual digital transistors, and
medium power transistors. The AEC-Q101-qualified transistors offer variants with VCC, VCEO, and
IC ratings. These transistors feature built-in bias resistors, enabling the desired configuration
without connecting external input resistors.

FEATURES
 Low saturation voltage for middle power transistors
 Large collector current for low-frequency amplifier transistors

 Only ON/OFF conditions need to be set for the operation of digital transistors (with built-in bias
resistors)
 Independent transistor elements eliminate interference in digital transistors

APPLICATIONS
 Inverters
 Driver circuits

 Low-frequency amplifiers
 Audio frequency small signal amplifiers
ROHM Semiconductor AEC-Q101 Qualified Transistors
ROHM Semiconductor AEC-Q101 Qualified Transistors feature NPN, PNP, and dual transistors
with or without built-in resistors. These transistors include middle power transistors, low-frequency
amplifiers, general-purpose digital (bias resistor built-in) transistors, dual digital transistors, and
medium power transistors. The AEC-Q101-qualified transistors offer variants with VCC, VCEO, and
IC ratings. These transistors feature built-in bias resistors, enabling the desired configuration
without connecting external input resistors.

FEATURES
 Low saturation voltage for middle power transistors
 Large collector current for low-frequency amplifier transistors

 Only ON/OFF conditions need to be set for the operation of digital transistors (with built-in bias
resistors)
 Independent transistor elements eliminate interference in digital transistors

APPLICATIONS
 Inverters
 Driver circuits

 Low-frequency amplifiers
 Audio frequency small signal amplifiers
ROHM Semiconductor AEC-Q101 Qualified Transistors
ROHM Semiconductor AEC-Q101 Qualified Transistors feature NPN, PNP, and dual transistors
with or without built-in resistors. These transistors include middle power transistors, low-frequency
amplifiers, general-purpose digital (bias resistor built-in) transistors, dual digital transistors, and
medium power transistors. The AEC-Q101-qualified transistors offer variants with VCC, VCEO, and
IC ratings. These transistors feature built-in bias resistors, enabling the desired configuration
without connecting external input resistors.

FEATURES
 Low saturation voltage for middle power transistors
 Large collector current for low-frequency amplifier transistors

 Only ON/OFF conditions need to be set for the operation of digital transistors (with built-in bias
resistors)
 Independent transistor elements eliminate interference in digital transistors

APPLICATIONS
 Inverters
 Driver circuits

 Low-frequency amplifiers
 Audio frequency small signal amplifiers
ROHM Semiconductor Standard Bipolar Transistors
ROHM Semiconductor Standard Bipolar Transistors are semiconductor devices that can amplify
analog or digital signals. The transistors amplify current, but they can be connected in circuits
designed to amplify voltage or power. These devices are available in both PNP and NPN polarities.

FEATURES
 Packages available
o CPT-3, EMT-6, SMT-6, SOT-23, SOT-23-3, SOT-25, SOT-25-5, SOT-25T, SOT-323,
SOT-353, SOT-363, SOT-363T, SOT-457, SOT-457T, SOT-553, SOT-563, SST-3,
TUMPT-5, DFN2020-3S, VMT6
 Collector-emitter voltages VCEO range from -60V to +80V
 Collector-base voltage VCBO range from -60V to +80V

 Emitter-base voltage VEBO range from -6V to +25V


 Collector current (continuous) range from -6A to +6A
 Operating temperature range from -65ºC to 150ºC
 Junction temperature TJ of 150ºC
 Gain bandwidth product transmit frequency (fT) from 35MHz to 400MHz

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